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VS-E7FX0212HM3/I VS-E7FX0212HM3/I Mitsubishi Electric Europe B.V. vs-e7fx0212hm3.pdf Description: DIODE STANDARD 1200V 2A DO219AB
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 3 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-E7FX0212HM3/I VS-E7FX0212HM3/I Mitsubishi Electric Europe B.V. vs-e7fx0212hm3.pdf Description: DIODE STANDARD 1200V 2A DO219AB
Current - Reverse Leakage @ Vr: 3 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
auf Bestellung 9014 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.57 EUR
62+0.35 EUR
100+0.33 EUR
500+0.3 EUR
1000+0.27 EUR
2000+0.26 EUR
5000+0.25 EUR
Mindestbestellmenge: 38 Stücke
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VS-E7FX0212-M3/I VS-E7FX0212-M3/I Mitsubishi Electric Europe B.V. vs-e7fx0212-m3.pdf Description: DIODE STANDARD 1200V 2A DO219AB
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 2A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-E7FX0212-M3/I VS-E7FX0212-M3/I Mitsubishi Electric Europe B.V. vs-e7fx0212-m3.pdf Description: DIODE STANDARD 1200V 2A DO219AB
Current - Reverse Leakage @ Vr: 3 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 5020 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.83 EUR
43+0.5 EUR
100+0.37 EUR
500+0.29 EUR
1000+0.23 EUR
5000+0.2 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-SC40FA65 VS-SC40FA65 Mitsubishi Electric Europe B.V. vs-sc40fa65.pdf Description: DIODE MOD SIC 650V 20A SOT-227
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 2 Independent
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Chassis Mount
Packaging: Strip
Package / Case: SOT-227-4, miniBLOC
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
1+64.95 EUR
10+48.18 EUR
Im Einkaufswagen  Stück im Wert von  UAH
VS-E7FX0212HM3/I vs-e7fx0212hm3.pdf
VS-E7FX0212HM3/I
Hersteller: Mitsubishi Electric Europe B.V.
Description: DIODE STANDARD 1200V 2A DO219AB
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 3 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-E7FX0212HM3/I vs-e7fx0212hm3.pdf
VS-E7FX0212HM3/I
Hersteller: Mitsubishi Electric Europe B.V.
Description: DIODE STANDARD 1200V 2A DO219AB
Current - Reverse Leakage @ Vr: 3 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
auf Bestellung 9014 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
38+0.57 EUR
62+0.35 EUR
100+0.33 EUR
500+0.3 EUR
1000+0.27 EUR
2000+0.26 EUR
5000+0.25 EUR
Mindestbestellmenge: 38 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-E7FX0212-M3/I vs-e7fx0212-m3.pdf
VS-E7FX0212-M3/I
Hersteller: Mitsubishi Electric Europe B.V.
Description: DIODE STANDARD 1200V 2A DO219AB
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 3 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 2A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-E7FX0212-M3/I vs-e7fx0212-m3.pdf
VS-E7FX0212-M3/I
Hersteller: Mitsubishi Electric Europe B.V.
Description: DIODE STANDARD 1200V 2A DO219AB
Current - Reverse Leakage @ Vr: 3 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 2A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 5020 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
43+0.5 EUR
100+0.37 EUR
500+0.29 EUR
1000+0.23 EUR
5000+0.2 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VS-SC40FA65 vs-sc40fa65.pdf
VS-SC40FA65
Hersteller: Mitsubishi Electric Europe B.V.
Description: DIODE MOD SIC 650V 20A SOT-227
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 2 Independent
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Chassis Mount
Packaging: Strip
Package / Case: SOT-227-4, miniBLOC
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+64.95 EUR
10+48.18 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 2