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V2N22HM3/I V2N22HM3/I Mitsubishi Electric Europe B.V. v2n22.pdf Description: DIODE SCHOTTK 200V 1.5A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 13937 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.22 EUR
5000+0.19 EUR
Mindestbestellmenge: 25
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V2N22-M3/I V2N22-M3/I Mitsubishi Electric Europe B.V. v2n22.pdf Description: DIODE SCHOTTK 200V 1.5A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
V2N22-M3/I V2N22-M3/I Mitsubishi Electric Europe B.V. v2n22.pdf Description: DIODE SCHOTTK 200V 1.5A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
auf Bestellung 13800 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
38+0.47 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.18 EUR
5000+0.16 EUR
Mindestbestellmenge: 24
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V8PA103HM3/H V8PA103HM3/H Mitsubishi Electric Europe B.V. v8pa103.pdf Description: DIODE SCHOTTKY 100V 8A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 920pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 8 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V8PA103-M3/H V8PA103-M3/H Mitsubishi Electric Europe B.V. v8pa103.pdf Description: DIODE SCHOTTKY 100V 8A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 920pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 8 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Produkt ist nicht verfügbar
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VMMBZ23C1DD1-G3-08 Mitsubishi Electric Europe B.V. vmmbz16c1dd1_to_vmmbz33c1dd1.pdf Description: ESD PROTECTION DIODE DFN1006-2B
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VMMBZ23C1DD1HG3-08 Mitsubishi Electric Europe B.V. vmmbz16c1dd1_to_vmmbz33c1dd1.pdf Description: ESD PROTECTION DIODE DFN1006-2B
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS-E7FX0112HM3/I VS-E7FX0112HM3/I Mitsubishi Electric Europe B.V. vs-e7fx0112hm3.pdf Description: DIODE STANDARD 1200V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-E7FX0112HM3/I VS-E7FX0112HM3/I Mitsubishi Electric Europe B.V. vs-e7fx0112hm3.pdf Description: DIODE STANDARD 1200V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 1121 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
33+0.54 EUR
100+0.35 EUR
500+0.23 EUR
1000+0.2 EUR
Mindestbestellmenge: 27
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VS-E7FX0112-M3/I VS-E7FX0112-M3/I Mitsubishi Electric Europe B.V. vs-e7fx0112-m3.pdf Description: DIODE STANDARD 1200V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
auf Bestellung 10000 Stücke:
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10000+0.11 EUR
Mindestbestellmenge: 10000
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VS-E7FX0112-M3/I VS-E7FX0112-M3/I Mitsubishi Electric Europe B.V. vs-e7fx0112-m3.pdf Description: DIODE STANDARD 1200V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
auf Bestellung 15992 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
110+0.16 EUR
120+0.15 EUR
Mindestbestellmenge: 67
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VS-E7FX0212HM3/I VS-E7FX0212HM3/I Mitsubishi Electric Europe B.V. vs-e7fx0212hm3.pdf Description: DIODE STANDARD 1200V 2A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 9014 Stücke:
Lieferzeit 10-14 Tag (e)
38+0.48 EUR
62+0.29 EUR
100+0.28 EUR
500+0.25 EUR
1000+0.23 EUR
2000+0.22 EUR
5000+0.21 EUR
Mindestbestellmenge: 38
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VS-E7FX0212HM3/I VS-E7FX0212HM3/I Mitsubishi Electric Europe B.V. vs-e7fx0212hm3.pdf Description: DIODE STANDARD 1200V 2A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-E7FX0212-M3/I VS-E7FX0212-M3/I Mitsubishi Electric Europe B.V. vs-e7fx0212-m3.pdf Description: DIODE STANDARD 1200V 2A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 1200 V
auf Bestellung 5020 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
43+0.42 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.19 EUR
5000+0.17 EUR
Mindestbestellmenge: 25
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VS-E7FX0212-M3/I VS-E7FX0212-M3/I Mitsubishi Electric Europe B.V. vs-e7fx0212-m3.pdf Description: DIODE STANDARD 1200V 2A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 1200 V
Produkt ist nicht verfügbar
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VS-SC40FA65 VS-SC40FA65 Mitsubishi Electric Europe B.V. vs-sc40fa65.pdf Description: DIODE MOD SIC 650V 20A SOT-227
Packaging: Strip
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
1+54.58 EUR
10+40.49 EUR
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V2N22HM3/I v2n22.pdf
V2N22HM3/I
Hersteller: Mitsubishi Electric Europe B.V.
Description: DIODE SCHOTTK 200V 1.5A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
Qualification: AEC-Q101
auf Bestellung 13937 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.22 EUR
5000+0.19 EUR
Mindestbestellmenge: 25
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V2N22-M3/I v2n22.pdf
V2N22-M3/I
Hersteller: Mitsubishi Electric Europe B.V.
Description: DIODE SCHOTTK 200V 1.5A DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
Produkt ist nicht verfügbar
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V2N22-M3/I v2n22.pdf
V2N22-M3/I
Hersteller: Mitsubishi Electric Europe B.V.
Description: DIODE SCHOTTK 200V 1.5A DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 40 µA @ 200 V
auf Bestellung 13800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
38+0.47 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.18 EUR
5000+0.16 EUR
Mindestbestellmenge: 24
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V8PA103HM3/H v8pa103.pdf
V8PA103HM3/H
Hersteller: Mitsubishi Electric Europe B.V.
Description: DIODE SCHOTTKY 100V 8A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 920pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 8 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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V8PA103-M3/H v8pa103.pdf
V8PA103-M3/H
Hersteller: Mitsubishi Electric Europe B.V.
Description: DIODE SCHOTTKY 100V 8A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 920pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 8 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Produkt ist nicht verfügbar
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VMMBZ23C1DD1-G3-08 vmmbz16c1dd1_to_vmmbz33c1dd1.pdf
Hersteller: Mitsubishi Electric Europe B.V.
Description: ESD PROTECTION DIODE DFN1006-2B
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VMMBZ23C1DD1HG3-08 vmmbz16c1dd1_to_vmmbz33c1dd1.pdf
Hersteller: Mitsubishi Electric Europe B.V.
Description: ESD PROTECTION DIODE DFN1006-2B
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS-E7FX0112HM3/I vs-e7fx0112hm3.pdf
VS-E7FX0112HM3/I
Hersteller: Mitsubishi Electric Europe B.V.
Description: DIODE STANDARD 1200V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-E7FX0112HM3/I vs-e7fx0112hm3.pdf
VS-E7FX0112HM3/I
Hersteller: Mitsubishi Electric Europe B.V.
Description: DIODE STANDARD 1200V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 1121 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
33+0.54 EUR
100+0.35 EUR
500+0.23 EUR
1000+0.2 EUR
Mindestbestellmenge: 27
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VS-E7FX0112-M3/I vs-e7fx0112-m3.pdf
VS-E7FX0112-M3/I
Hersteller: Mitsubishi Electric Europe B.V.
Description: DIODE STANDARD 1200V 1A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.11 EUR
Mindestbestellmenge: 10000
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VS-E7FX0112-M3/I vs-e7fx0112-m3.pdf
VS-E7FX0112-M3/I
Hersteller: Mitsubishi Electric Europe B.V.
Description: DIODE STANDARD 1200V 1A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
auf Bestellung 15992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
110+0.16 EUR
120+0.15 EUR
Mindestbestellmenge: 67
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VS-E7FX0212HM3/I vs-e7fx0212hm3.pdf
VS-E7FX0212HM3/I
Hersteller: Mitsubishi Electric Europe B.V.
Description: DIODE STANDARD 1200V 2A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 9014 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
62+0.29 EUR
100+0.28 EUR
500+0.25 EUR
1000+0.23 EUR
2000+0.22 EUR
5000+0.21 EUR
Mindestbestellmenge: 38
Im Einkaufswagen  Stück im Wert von  UAH
VS-E7FX0212HM3/I vs-e7fx0212hm3.pdf
VS-E7FX0212HM3/I
Hersteller: Mitsubishi Electric Europe B.V.
Description: DIODE STANDARD 1200V 2A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-E7FX0212-M3/I vs-e7fx0212-m3.pdf
VS-E7FX0212-M3/I
Hersteller: Mitsubishi Electric Europe B.V.
Description: DIODE STANDARD 1200V 2A DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 1200 V
auf Bestellung 5020 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
43+0.42 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.19 EUR
5000+0.17 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
VS-E7FX0212-M3/I vs-e7fx0212-m3.pdf
VS-E7FX0212-M3/I
Hersteller: Mitsubishi Electric Europe B.V.
Description: DIODE STANDARD 1200V 2A DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 2 A
Current - Reverse Leakage @ Vr: 3 µA @ 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
VS-SC40FA65 vs-sc40fa65.pdf
VS-SC40FA65
Hersteller: Mitsubishi Electric Europe B.V.
Description: DIODE MOD SIC 650V 20A SOT-227
Packaging: Strip
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+54.58 EUR
10+40.49 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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