V8PA103HM3/H Mitsubishi Electric Europe B.V.
Hersteller: Mitsubishi Electric Europe B.V.Description: DIODE SCHOTTKY 100V 8A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 920pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 8 A
Current - Reverse Leakage @ Vr: 330 µA @ 100 V
Qualification: AEC-Q101
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Technische Details V8PA103HM3/H Mitsubishi Electric Europe B.V.
Description: DIODE SCHOTTKY 100V 8A DO221BC, Packaging: Tape & Reel (TR), Package / Case: DO-221BC, SMA Flat Leads Exposed Pad, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 920pF @ 4V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: DO-221BC (SMPA), Operating Temperature - Junction: -40°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 740 mV @ 8 A, Current - Reverse Leakage @ Vr: 330 µA @ 100 V, Qualification: AEC-Q101.
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V8PA103HM3/H | Hersteller : Vishay |
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