Suchergebnisse für "135N03L" : 22

Art der Ansicht :
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
135N03L infineon 07+
auf Bestellung 2115 Stücke:
Lieferzeit 21-28 Tag (e)
135N03LG Infineon 0706+
auf Bestellung 1914 Stücke:
Lieferzeit 21-28 Tag (e)
IPD135N03LGATMA1 IPD135N03LGATMA1 INFINEON TECHNOLOGIES IPD135N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 882 Stücke:
Lieferzeit 14-21 Tag (e)
59+1.22 EUR
121+ 0.59 EUR
137+ 0.52 EUR
159+ 0.45 EUR
168+ 0.43 EUR
500+ 0.42 EUR
Mindestbestellmenge: 59
IPD135N03LGATMA1 IPD135N03LGATMA1 INFINEON TECHNOLOGIES IPD135N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 882 Stücke:
Lieferzeit 7-14 Tag (e)
59+1.22 EUR
121+ 0.59 EUR
137+ 0.52 EUR
159+ 0.45 EUR
168+ 0.43 EUR
500+ 0.42 EUR
Mindestbestellmenge: 59
IPD135N03LGATMA1 IPD135N03LGATMA1 Infineon Technologies Infineon_IPD135N03LG_DataSheet_v02_02_EN-3362328.pdf MOSFET N-Ch 30V 30A DPAK-2
auf Bestellung 38006 Stücke:
Lieferzeit 14-28 Tag (e)
29+1.81 EUR
35+ 1.5 EUR
100+ 1.13 EUR
500+ 0.82 EUR
1000+ 0.74 EUR
2500+ 0.7 EUR
Mindestbestellmenge: 29
IPD135N03LGATMA1 IPD135N03LGATMA1 Infineon Technologies IPD135N03LG_rev2.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304327b897500127b8b9540f0003 Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.78 EUR
5000+ 0.74 EUR
12500+ 0.68 EUR
25000+ 0.67 EUR
Mindestbestellmenge: 2500
IPD135N03LGATMA1 IPD135N03LGATMA1 Infineon Technologies IPD135N03LG_rev2.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304327b897500127b8b9540f0003 Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
auf Bestellung 31677 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.05 EUR
15+ 1.77 EUR
100+ 1.23 EUR
500+ 1.03 EUR
1000+ 0.87 EUR
Mindestbestellmenge: 13
IPS135N03LG IPS135N03LG Infineon Technologies INFNS29213-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 2861 Stücke:
Lieferzeit 21-28 Tag (e)
1731+0.41 EUR
Mindestbestellmenge: 1731
IPD135N03LG Infineon INFNS29213-1.pdf?t.download=true&u=5oefqw 0706+
auf Bestellung 1914 Stücke:
Lieferzeit 21-28 Tag (e)
IPD135N03LG Infineon technologies INFNS29213-1.pdf?t.download=true&u=5oefqw
auf Bestellung 928 Stücke:
Lieferzeit 21-28 Tag (e)
IPD135N03LG infine INFNS29213-1.pdf?t.download=true&u=5oefqw 07+ SOP8
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
IPD135N03LG infineon INFNS29213-1.pdf?t.download=true&u=5oefqw
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
135N03L
Produktcode: 62486 		Transistoren > MOSFET N-CH
Uds,V: 30
Idd,A: 30
Produkt ist nicht verfügbar
IPD135N03L G
Produktcode: 128409 		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IPD135N03LGATMA1 IPD135N03LGATMA1 Infineon Technologies ipd135n03lg_rev1.041.pdf Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
IPD135N03LGBTMA1 IPD135N03LGBTMA1 Infineon Technologies ipd135n03lg_rev1.041.pdf Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
IPD135N03LGBTMA1 IPD135N03LGBTMA1 Infineon Technologies IPDx135N03LG_rev1.04_2008-04-15.pdf Description: LV POWER MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Produkt ist nicht verfügbar
IPD135N03LGXT IPD135N03LGXT Infineon Technologies IP%28D%2CF%2CS%2CU%29135N03L_G.pdf Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Produkt ist nicht verfügbar
IPS135N03LGAKMA1 IPS135N03LGAKMA1 Infineon Technologies ipd135n03lg_rev1.041.pdf Trans MOSFET N-CH 30V 30A 3-Pin(3+Tab) TO-251 Tube
Produkt ist nicht verfügbar
IPS135N03LGAKMA1 IPS135N03LGAKMA1 Infineon Technologies IPD135N03LG_rev2.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304327b897500127b8b9540f0003 Description: MOSFET N-CH 30V 30A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Produkt ist nicht verfügbar
IPU135N03L G IPU135N03L G Infineon Technologies IPD135N03LG_rev2.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304327b897500127b8b9540f0003 Description: MOSFET N-CH 30V 30A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Produkt ist nicht verfügbar
135N03L
Hersteller: infineon
07+
auf Bestellung 2115 Stücke:
Lieferzeit 21-28 Tag (e)
135N03LG
Hersteller: Infineon
0706+
auf Bestellung 1914 Stücke:
Lieferzeit 21-28 Tag (e)
IPD135N03LGATMA1 IPD135N03LG-DTE.pdf
IPD135N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 882 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
59+1.22 EUR
121+ 0.59 EUR
137+ 0.52 EUR
159+ 0.45 EUR
168+ 0.43 EUR
500+ 0.42 EUR
Mindestbestellmenge: 59
IPD135N03LGATMA1 IPD135N03LG-DTE.pdf
IPD135N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 882 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
59+1.22 EUR
121+ 0.59 EUR
137+ 0.52 EUR
159+ 0.45 EUR
168+ 0.43 EUR
500+ 0.42 EUR
Mindestbestellmenge: 59
IPD135N03LGATMA1 Infineon_IPD135N03LG_DataSheet_v02_02_EN-3362328.pdf
IPD135N03LGATMA1
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 30A DPAK-2
auf Bestellung 38006 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
29+1.81 EUR
35+ 1.5 EUR
100+ 1.13 EUR
500+ 0.82 EUR
1000+ 0.74 EUR
2500+ 0.7 EUR
Mindestbestellmenge: 29
IPD135N03LGATMA1 IPD135N03LG_rev2.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304327b897500127b8b9540f0003
IPD135N03LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.78 EUR
5000+ 0.74 EUR
12500+ 0.68 EUR
25000+ 0.67 EUR
Mindestbestellmenge: 2500
IPD135N03LGATMA1 IPD135N03LG_rev2.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304327b897500127b8b9540f0003
IPD135N03LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
auf Bestellung 31677 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.05 EUR
15+ 1.77 EUR
100+ 1.23 EUR
500+ 1.03 EUR
1000+ 0.87 EUR
Mindestbestellmenge: 13
IPS135N03LG INFNS29213-1.pdf?t.download=true&u=5oefqw
IPS135N03LG
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 2861 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1731+0.41 EUR
Mindestbestellmenge: 1731
IPD135N03LG INFNS29213-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon
0706+
auf Bestellung 1914 Stücke:
Lieferzeit 21-28 Tag (e)
IPD135N03LG INFNS29213-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon technologies
auf Bestellung 928 Stücke:
Lieferzeit 21-28 Tag (e)
IPD135N03LG INFNS29213-1.pdf?t.download=true&u=5oefqw
Hersteller: infine
07+ SOP8
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
IPD135N03LG INFNS29213-1.pdf?t.download=true&u=5oefqw
Hersteller: infineon
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
135N03L
Produktcode: 62486
Transistoren > MOSFET N-CH
Uds,V: 30
Idd,A: 30
Produkt ist nicht verfügbar
IPD135N03L G
Produktcode: 128409
Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
IPD135N03LGATMA1 ipd135n03lg_rev1.041.pdf
IPD135N03LGATMA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
IPD135N03LGBTMA1 ipd135n03lg_rev1.041.pdf
IPD135N03LGBTMA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
IPD135N03LGBTMA1 IPDx135N03LG_rev1.04_2008-04-15.pdf
IPD135N03LGBTMA1
Hersteller: Infineon Technologies
Description: LV POWER MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Produkt ist nicht verfügbar
IPD135N03LGXT IP%28D%2CF%2CS%2CU%29135N03L_G.pdf
IPD135N03LGXT
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Produkt ist nicht verfügbar
IPS135N03LGAKMA1 ipd135n03lg_rev1.041.pdf
IPS135N03LGAKMA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 30A 3-Pin(3+Tab) TO-251 Tube
Produkt ist nicht verfügbar
IPS135N03LGAKMA1 IPD135N03LG_rev2.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304327b897500127b8b9540f0003
IPS135N03LGAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3-11
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Produkt ist nicht verfügbar
IPU135N03L G IPD135N03LG_rev2.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304327b897500127b8b9540f0003
IPU135N03L G
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO251-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Produkt ist nicht verfügbar