IPD135N03LGATMA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.53 EUR |
5000+ | 0.5 EUR |
12500+ | 0.46 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IPD135N03LGATMA1 Infineon Technologies
Description: INFINEON - IPD135N03LGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 30 A, 0.0113 ohm, TO-252 (DPAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 30A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 31W, Gate-Source-Schwellenspannung, max.: 2.2V, euEccn: NLR, Verlustleistung: 31W, Bauform - Transistor: TO-252 (DPAK), Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.0113ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.0113ohm, SVHC: No SVHC (17-Jan-2023).
Weitere Produktangebote IPD135N03LGATMA1 nach Preis ab 0.42 EUR bis 1.39 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IPD135N03LGATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3 Power dissipation: 31W Case: PG-TO252-3 Mounting: SMD Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 21A On-state resistance: 13.5mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 882 Stücke: Lieferzeit 7-14 Tag (e) |
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IPD135N03LGATMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3 Power dissipation: 31W Case: PG-TO252-3 Mounting: SMD Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 21A On-state resistance: 13.5mΩ Type of transistor: N-MOSFET |
auf Bestellung 882 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD135N03LGATMA1 | Hersteller : Infineon Technologies | MOSFET N-Ch 30V 30A DPAK-2 |
auf Bestellung 38006 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD135N03LGATMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 30A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V |
auf Bestellung 31677 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD135N03LGATMA1 | Hersteller : INFINEON |
Description: INFINEON - IPD135N03LGATMA1 - Leistungs-MOSFET, n-Kanal, 30 V, 30 A, 0.0113 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 31W Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 31W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0113ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0113ohm SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 6337 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD135N03LGATMA1 | Hersteller : Infineon Technologies | Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |