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IPD135N03LGATMA1

IPD135N03LGATMA1 Infineon Technologies

IPD135N03LG_rev2.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304327b897500127b8b9540f0003
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
auf Bestellung 27500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2500+0.43 EUR
5000+0.4 EUR
7500+0.36 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IPD135N03LGATMA1 Infineon Technologies

Description: MOSFET N-CH 30V 30A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V, Power Dissipation (Max): 31W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PG-TO252-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V.

Weitere Produktangebote IPD135N03LGATMA1 nach Preis ab 0.3 EUR bis 1.18 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IPD135N03LGATMA1 IPD135N03LGATMA1 INFINEON TECHNOLOGIES IPD135N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 681 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
143+0.5 EUR
173+0.41 EUR
Mindestbestellmenge: 120 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD135N03LGATMA1 IPD135N03LGATMA1 Infineon Technologies IPD135N03LG_rev2.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304327b897500127b8b9540f0003 Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
auf Bestellung 28599 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.9 EUR
25+0.72 EUR
100+0.54 EUR
500+0.48 EUR
1000+0.45 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD135N03LGATMA1 IPD135N03LGATMA1 Infineon Technologies Infineon_IPD135N03LG_DataSheet_v02_02_EN.pdf MOSFETs N-Ch 30V 30A DPAK-2
auf Bestellung 17033 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.18 EUR
10+0.77 EUR
100+0.55 EUR
500+0.43 EUR
1000+0.38 EUR
2500+0.3 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD135N03LGATMA1 IPD135N03LG-DTE.pdf
IPD135N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 31W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 681 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
120+0.6 EUR
143+0.5 EUR
173+0.41 EUR
Mindestbestellmenge: 120 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD135N03LGATMA1 IPD135N03LG_rev2.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304327b897500127b8b9540f0003
IPD135N03LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 30A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 30A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
auf Bestellung 28599 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
20+0.9 EUR
25+0.72 EUR
100+0.54 EUR
500+0.48 EUR
1000+0.45 EUR
Mindestbestellmenge: 20 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IPD135N03LGATMA1 Infineon_IPD135N03LG_DataSheet_v02_02_EN.pdf
IPD135N03LGATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 30V 30A DPAK-2
auf Bestellung 17033 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+1.18 EUR
10+0.77 EUR
100+0.55 EUR
500+0.43 EUR
1000+0.38 EUR
2500+0.3 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH