Suchergebnisse für "75gn60" : 18
Art der Ansicht :
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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2952020/UM108/17.75/GN6021 | Phoenix Contact |
 Press-Drawn Section Housings, Basic Profile, Open, Length 2000 mm |
Produkt ist nicht verfügbar |
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APT75GN60BDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: THT Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns |
Produkt ist nicht verfügbar |
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APT75GN60BDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: THT Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT75GN60BDQ2G | Microchip Technology |
Trans IGBT Chip N-CH 600V 155A 536W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT75GN60BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 93A; 536W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: THT Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns |
Produkt ist nicht verfügbar |
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APT75GN60BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 93A; 536W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: THT Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT75GN60BG | Microchip Technology |
Trans IGBT Chip N-CH 600V 155A 536000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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APT75GN60LDQ3G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 93A; 536W; TO264 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: TO264 Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: THT Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns |
Produkt ist nicht verfügbar |
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APT75GN60LDQ3G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 93A; 536W; TO264 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: TO264 Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: THT Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT75GN60LDQ3G | Microchip Technology |
Trans IGBT Chip N-CH 600V 155A 536000mW 3-Pin(3+Tab) TO-264 Tube |
Produkt ist nicht verfügbar |
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APT75GN60SDQ2G | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; D3PAK Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: D3PAK Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: SMD Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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APT75GN60SDQ2G | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; D3PAK Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: D3PAK Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: SMD Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT75GN60SDQ2G | Microchip Technology |
Trans IGBT Chip N-CH 600V 155A 536000mW 3-Pin(2+Tab) D3PAK Tube |
Produkt ist nicht verfügbar |
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| UM108/8.75/GN6021 | Phoenix Contact | UM108/8.75/GN6021 |
Produkt ist nicht verfügbar |
| 2952020/UM108/17.75/GN6021 |
|
Hersteller: Phoenix Contact
Press-Drawn Section Housings, Basic Profile, Open, Length 2000 mm
Press-Drawn Section Housings, Basic Profile, Open, Length 2000 mm
Produkt ist nicht verfügbar
| APT75GN60BDQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Produkt ist nicht verfügbar
| APT75GN60BDQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT75GN60BDQ2G |
|
Hersteller: Microchip Technology
Trans IGBT Chip N-CH 600V 155A 536W 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 155A 536W 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| APT75GN60BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 93A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 93A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Produkt ist nicht verfügbar
| APT75GN60BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 93A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 93A; 536W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT75GN60BG |
|
Hersteller: Microchip Technology
Trans IGBT Chip N-CH 600V 155A 536000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 600V 155A 536000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| APT75GN60LDQ3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 93A; 536W; TO264
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO264
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 93A; 536W; TO264
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO264
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Produkt ist nicht verfügbar
| APT75GN60LDQ3G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 93A; 536W; TO264
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO264
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 93A; 536W; TO264
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: TO264
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT75GN60LDQ3G |
|
Hersteller: Microchip Technology
Trans IGBT Chip N-CH 600V 155A 536000mW 3-Pin(3+Tab) TO-264 Tube
Trans IGBT Chip N-CH 600V 155A 536000mW 3-Pin(3+Tab) TO-264 Tube
Produkt ist nicht verfügbar
| APT75GN60SDQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; D3PAK
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: D3PAK
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: SMD
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Features of semiconductor devices: integrated anti-parallel diode
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; D3PAK
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: D3PAK
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: SMD
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| APT75GN60SDQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; D3PAK
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: D3PAK
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: SMD
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; D3PAK
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 93A
Power dissipation: 536W
Case: D3PAK
Gate-emitter voltage: ±30V
Pulsed collector current: 225A
Mounting: SMD
Gate charge: 485nC
Kind of package: tube
Turn-on time: 95ns
Turn-off time: 485ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT75GN60SDQ2G |
|
Hersteller: Microchip Technology
Trans IGBT Chip N-CH 600V 155A 536000mW 3-Pin(2+Tab) D3PAK Tube
Trans IGBT Chip N-CH 600V 155A 536000mW 3-Pin(2+Tab) D3PAK Tube
Produkt ist nicht verfügbar