APT75GN60SDQ2G Microchip Technology
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Technische Details APT75GN60SDQ2G Microchip Technology
Description: IGBT TRENCH FS 600V 155A D3PAK, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 25 ns, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A, Supplier Device Package: D3Pak, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 47ns/385ns, Switching Energy: 2.5mJ (on), 2.14mJ (off), Test Condition: 400V, 75A, 1Ohm, 15V, Gate Charge: 485 nC, Current - Collector (Ic) (Max): 155 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 536 W.
Weitere Produktangebote APT75GN60SDQ2G
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APT75GN60SDQ2G | Hersteller : MICROCHIP TECHNOLOGY |
 Category: SMD IGBT transistorsDescription: Transistor: IGBT; Field Stop; 600V; 93A; 536W; D3PAK Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: D3PAK Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: SMD Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
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APT75GN60SDQ2G | Hersteller : Microchip Technology |
Description: IGBT TRENCH FS 600V 155A D3PAK Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A Supplier Device Package: D3Pak IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 47ns/385ns Switching Energy: 2.5mJ (on), 2.14mJ (off) Test Condition: 400V, 75A, 1Ohm, 15V Gate Charge: 485 nC Current - Collector (Ic) (Max): 155 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 225 A Power - Max: 536 W |
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APT75GN60SDQ2G | Hersteller : Microchip Technology |
IGBTs IGBT Fieldstop Low Frequency Combi 600 V 75 A TO-268 |
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APT75GN60SDQ2G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 93A; 536W; D3PAK Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 93A Power dissipation: 536W Case: D3PAK Gate-emitter voltage: ±30V Pulsed collector current: 225A Mounting: SMD Gate charge: 485nC Kind of package: tube Turn-on time: 95ns Turn-off time: 485ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |