Technische Details APT75GN60SDQ2G Microchip Technology
Description: IGBT TRENCH FS 600V 155A D3PAK, Power - Max: 536 W, Current - Collector Pulsed (Icm): 225 A, Packaging: Tube, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 155 A, Gate Charge: 485 nC, Test Condition: 400V, 75A, 1Ohm, 15V, Switching Energy: 2.5mJ (on), 2.14mJ (off), Td (on/off) @ 25°C: 47ns/385ns, IGBT Type: Trench Field Stop, Supplier Device Package: D3Pak, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 75A, Reverse Recovery Time (trr): 25 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA.
Weitere Produktangebote APT75GN60SDQ2G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| APT75GN60SDQ2G | Microsemi |
Trans IGBT Chip N-CH 600V 155A 536000mW 3-Pin(2+Tab) D3PAK Tube |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| APT75GN60SDQ2G |
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Hersteller: Microsemi
Trans IGBT Chip N-CH 600V 155A 536000mW 3-Pin(2+Tab) D3PAK Tube
Trans IGBT Chip N-CH 600V 155A 536000mW 3-Pin(2+Tab) D3PAK Tube
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)


