Suchergebnisse für "BUZ80" : 10
Art der Ansicht :
Mindestbestellmenge: 2
| Foto | Bezeichnung | Hersteller | Beschreibung |
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BUZ80A Produktcode: 29415 |
ST |
 Transistoren > MOSFET N-CHGehäuse: TO-220 Uds,V: 800 Idd,A: 03.08.2015 Rds(on), Ohm: 02.05.2015 Ciss, pF/Qg, nC: 1100/70 JHGF: THT |
verfügbar: 12 Stück
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| BUZ80 | IR | 2002 T0-220 |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| BUZ80A | INFINEON |
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auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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| BUZ80A | INFINEON |
09+ |
auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) |
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| BUZ80ASMD |
auf Bestellung 8639 Stücke: Lieferzeit 21-28 Tag (e) |
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NTE2387 | NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 16A; 125W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.6A Pulsed drain current: 16A Power dissipation: 125W Case: TO220 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Kind of channel: enhanced |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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BUZ80 Produktcode: 45117 |
ST |
Transistoren > MOSFET N-CH Gehäuse: TO-220-3 Uds,V: 800 Idd,A: 03.04.2015 Rds(on), Ohm: 03.03.2015 JHGF: THT |
Produkt ist nicht verfügbar
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BUZ80AF Produktcode: 161626 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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BUZ80A | Infineon Technologies |
Description: MOSFET N-CH 800V 3.6A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
Produkt ist nicht verfügbar |
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SPP04N80C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Power dissipation: 63W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
| BUZ80A Produktcode: 29415 |
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Hersteller: ST
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 800
Idd,A: 03.08.2015
Rds(on), Ohm: 02.05.2015
Ciss, pF/Qg, nC: 1100/70
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 800
Idd,A: 03.08.2015
Rds(on), Ohm: 02.05.2015
Ciss, pF/Qg, nC: 1100/70
JHGF: THT
verfügbar: 12 Stück
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| 1+ | 0.76 EUR |
| NTE2387 |
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Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 16A; 125W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Pulsed drain current: 16A
Power dissipation: 125W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.6A; Idm: 16A; 125W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.6A
Pulsed drain current: 16A
Power dissipation: 125W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Kind of channel: enhanced
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
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| 2+ | 35.75 EUR |
| BUZ80 Produktcode: 45117 |
Hersteller: ST
Transistoren > MOSFET N-CH
Gehäuse: TO-220-3
Uds,V: 800
Idd,A: 03.04.2015
Rds(on), Ohm: 03.03.2015
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220-3
Uds,V: 800
Idd,A: 03.04.2015
Rds(on), Ohm: 03.03.2015
JHGF: THT
Produkt ist nicht verfügbar
| BUZ80A |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 3.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Description: MOSFET N-CH 800V 3.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Produkt ist nicht verfügbar
| SPP04N80C3 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar