SPP04N80C3 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.33 EUR |
| 10+ | 2.76 EUR |
| 100+ | 1.87 EUR |
| 500+ | 1.5 EUR |
| 1000+ | 1.34 EUR |
| 2500+ | 1.26 EUR |
| 5000+ | 1.2 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details SPP04N80C3 Infineon Technologies
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3, Type of transistor: N-MOSFET, Technology: CoolMOS™, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 4A, Power dissipation: 63W, Case: PG-TO220-3, Gate-source voltage: ±20V, On-state resistance: 1.3Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement.
Weitere Produktangebote SPP04N80C3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
SPP04N80C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Power dissipation: 63W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 219 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SPP04N80C3 |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; 63W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 63W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 219 Stücke:
Lieferzeit 14-21 Tag (e)



