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HER308 HER308
Produktcode: 31476 		YJ HER301-8_UF5401-8.pdf description Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle
Gehäuse: DO-27
Vrr, V: 1000
Iav, A: 3
Trr, ns: 70
verfügbar: 652 Stück
1+0.1 EUR
10+ 0.088 EUR
100+ 0.074 EUR
HER308 HER308
Produktcode: 172115 		MIC HER301-8_UF5401-8.pdf description Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle
Gehäuse: DO-201AD
Vrr, V: 1000 V
Iav, A: 0,125
Trr, ns: 70 ns
auf Bestellung 650 Stück:
Lieferzeit 21-28 Tag (e)
HER308 HER308 CDIL HER301_8.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 150A; DO201AD; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 70pF
Kind of package: Ammo Pack
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.7V
Reverse recovery time: 50ns
auf Bestellung 3475 Stücke:
Lieferzeit 14-21 Tag (e)
315+0.23 EUR
585+ 0.12 EUR
650+ 0.11 EUR
760+ 0.094 EUR
795+ 0.09 EUR
Mindestbestellmenge: 315
HER308 HER308 YANGJIE TECHNOLOGY HER301_SER.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 125A; DO201AD; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
auf Bestellung 1115 Stücke:
Lieferzeit 14-21 Tag (e)
315+0.23 EUR
530+ 0.14 EUR
590+ 0.12 EUR
705+ 0.1 EUR
750+ 0.096 EUR
Mindestbestellmenge: 315
HER308 HER308 YANGJIE TECHNOLOGY HER301_SER.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 125A; DO201AD; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1115 Stücke:
Lieferzeit 7-14 Tag (e)
315+0.23 EUR
530+ 0.14 EUR
590+ 0.12 EUR
705+ 0.1 EUR
750+ 0.096 EUR
Mindestbestellmenge: 315
HER308 HER308 DC COMPONENTS HER30x-DTE.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 150A; DO27; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: Ammo Pack
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1.7V
Reverse recovery time: 100ns
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
HER308 HER308 CDIL HER301_8.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 150A; DO201AD; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 70pF
Kind of package: Ammo Pack
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.7V
Reverse recovery time: 50ns
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3475 Stücke:
Lieferzeit 7-14 Tag (e)
315+0.23 EUR
585+ 0.12 EUR
650+ 0.11 EUR
760+ 0.094 EUR
795+ 0.09 EUR
Mindestbestellmenge: 315
HER308 Yangjie Technology description Випрямний діод вивідний; Io, A = 3; Uзвор, В = 1 000; Uf (max), В = 1,7; If, А = 3; Тексп, °C = -55...+125; DO-27
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
23+0.3 EUR
25+ 0.25 EUR
100+ 0.21 EUR
Mindestbestellmenge: 23
HER308 DC Components description Випрямний діод вивідний; Io, A = 3; Uзвор, В = 1 000; Uf (max), В = 1,7; If, А = 3; trr, нс = 75 мс; Тексп, °C = -65...+150; I, мкА @ Ur, В = 10 @ 1000; DO-27
auf Bestellung 368 Stücke:
Lieferzeit 14-21 Tag (e)
23+0.3 EUR
25+ 0.25 EUR
100+ 0.21 EUR
Mindestbestellmenge: 23
HER308G HER308G YANGJIE TECHNOLOGY HER301G_SER.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 125A; DO201AD; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
auf Bestellung 1020 Stücke:
Lieferzeit 14-21 Tag (e)
195+0.37 EUR
440+ 0.16 EUR
490+ 0.15 EUR
640+ 0.11 EUR
Mindestbestellmenge: 195
HER308G HER308G YANGJIE TECHNOLOGY HER301G_SER.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 125A; DO201AD; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1020 Stücke:
Lieferzeit 7-14 Tag (e)
195+0.37 EUR
440+ 0.16 EUR
490+ 0.15 EUR
640+ 0.11 EUR
Mindestbestellmenge: 195
HER308G HER308G HY Electronic (Cayman) Limited 13-HER30XG(UF300XG)-(DO-27).pdf Description: DIODE GEN PURP 1KV 3A DO27
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 1200 Stücke:
Lieferzeit 21-28 Tag (e)
41+0.64 EUR
Mindestbestellmenge: 41
HER308G HER308G Taiwan Semiconductor Corporation 13-HER30XG(UF300XG)-(DO-27).pdf Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1546 Stücke:
Lieferzeit 21-28 Tag (e)
20+1.35 EUR
23+ 1.14 EUR
100+ 0.79 EUR
500+ 0.62 EUR
Mindestbestellmenge: 20
HER308G HER308G Taiwan Semiconductor Corporation 13-HER30XG(UF300XG)-(DO-27).pdf Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1250 Stücke:
Lieferzeit 21-28 Tag (e)
1250+0.5 EUR
Mindestbestellmenge: 1250
HER308GH HER308GH Taiwan Semiconductor Corporation Description: 75NS, 3A, 1000V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
20+1.35 EUR
23+ 1.14 EUR
100+ 0.79 EUR
500+ 0.62 EUR
Mindestbestellmenge: 20
HER308GH HER308GH Taiwan Semiconductor Corporation Description: 75NS, 3A, 1000V, HIGH EFFICIENT
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
1250+0.5 EUR
2500+ 0.45 EUR
Mindestbestellmenge: 1250
HER308 description HER308 Диоды
auf Bestellung 103 Stücke:
Lieferzeit 7-21 Tag (e)
HER308; (3A 1000V); 75ns YANGJIE на ленте; корпус: DO-201AD
auf Bestellung 7110 Stücke:
Lieferzeit 14-21 Tag (e)
HER308G Yangzhou Yangjie Electronic Imp & Exp.Co.Ltd 13-HER30XG(UF300XG)-(DO-27).pdf HER308 3.0A 1000V DO-27
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)
TCDG0ER308
auf Bestellung 310000 Stücke:
Lieferzeit 21-28 Tag (e)
Діод ультрашвидкий HER308 3A 1000V 70ns, DO-27
auf Bestellung 456 Stücke:
Lieferzeit 14-21 Tag (e)
UF5408 MIC uf5400.pdf 3A; 1000V; ultra fast <75ns packaging: ammo; equivalent: HER308; SF310 UF5408 diode rectifying DP UF5408
Anzahl je Verpackung: 1250 Stücke
auf Bestellung 2930 Stücke:
Lieferzeit 7-14 Tag (e)
1250+0.18 EUR
Mindestbestellmenge: 1250
UF5408 LGE uf5400.pdf 3A; 1000V; ultra fast <75ns packaging: ammo; equivalent: HER308; SF310 UF5408 diode rectifying DP UF5408 q
Anzahl je Verpackung: 1250 Stücke
auf Bestellung 1900 Stücke:
Lieferzeit 7-14 Tag (e)
1250+0.19 EUR
Mindestbestellmenge: 1250
UF5408 LGE uf5400.pdf 3A; 1000V; ultra fast <75ns packaging: ammo; equivalent: HER308; SF310 UF5408 diode rectifying DP UF5408 q
Anzahl je Verpackung: 1250 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)
1250+0.19 EUR
Mindestbestellmenge: 1250
UF5408 MIC uf5400.pdf 3A; 1000V; ultra fast <75ns packaging: ammo; equivalent: HER308; SF310 UF5408 diode rectifying DP UF5408
Anzahl je Verpackung: 1250 Stücke
auf Bestellung 6250 Stücke:
Lieferzeit 7-14 Tag (e)
1250+0.18 EUR
Mindestbestellmenge: 1250
HER308-AP
Produktcode: 15448 		HER301_-_HER308.pdf Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle
Produkt ist nicht verfügbar
HER308G
Produktcode: 186358 		13-HER30XG(UF300XG)-(DO-27).pdf Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden
Produkt ist nicht verfügbar
ER308_R2_00001 ER308_R2_00001 Panjit International Inc. ER300_SERIES.pdf Description: DIODE GEN PURP 800V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
ER308_R2_00001 ER308_R2_00001 Panjit International Inc. ER300_SERIES.pdf Description: DIODE GEN PURP 800V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
ECD-G0ER308 ECD-G0ER308 Panasonic Electronic Components ECD-G_%28Hi-Q%29.pdf Description: CAP CER 0.3PF 25V C0G/NP0 0402
Tolerance: ±0.05pF
Features: High Q, Low Loss
Packaging: Tape & Reel (TR)
Voltage - Rated: 25V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.022" (0.55mm)
Part Status: Obsolete
Capacitance: 0.3 pF
Produkt ist nicht verfügbar
ECD-G0ER308 ECD-G0ER308 Panasonic Electronic Components ECD-G_%28Hi-Q%29.pdf Description: CAP CER 0.3PF 25V C0G/NP0 0402
Tolerance: ±0.05pF
Features: High Q, Low Loss
Packaging: Cut Tape (CT)
Voltage - Rated: 25V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.022" (0.55mm)
Part Status: Obsolete
Capacitance: 0.3 pF
Produkt ist nicht verfügbar
ECD-GZER308 ECD-GZER308 Panasonic Electronic Components ECD-G_%28Hi-Q%29.pdf Description: CAP CER 0.3PF 25V C0G/NP0 0201
Tolerance: ±0.05pF
Features: High Q, Low Loss
Packaging: Tape & Reel (TR)
Voltage - Rated: 25V
Package / Case: 0201 (0603 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.013" (0.33mm)
Part Status: Obsolete
Capacitance: 0.3 pF
Produkt ist nicht verfügbar
ECD-GZER308 ECD-GZER308 Panasonic Electronic Components ECD-G_%28Hi-Q%29.pdf Description: CAP CER 0.3PF 25V C0G/NP0 0201
Packaging: Cut Tape (CT)
Tolerance: ±0.05pF
Features: High Q, Low Loss
Voltage - Rated: 25V
Package / Case: 0201 (0603 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.013" (0.33mm)
Part Status: Obsolete
Capacitance: 0.3 pF
Produkt ist nicht verfügbar
HER308 HER308 DC COMPONENTS HER30x-DTE.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 150A; DO27; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: Ammo Pack
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1.7V
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
HER308 HER308 DC COMPONENTS HER30x-DTE.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 150A; DO27; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: Ammo Pack
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1.7V
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
HER308 HER308 DC COMPONENTS HER30x-DTE.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 150A; DO27; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: Ammo Pack
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1.7V
Reverse recovery time: 100ns
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
HER308 R0 HER308 R0 Taiwan Semiconductor her301_d11.pdf Diode Switching 1KV 3A 2-Pin DO-201AD T/R
Produkt ist nicht verfügbar
HER308-AP HER308-AP Micro Commercial Co HER301_-_HER308.pdf Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
HER308-T HER308-T Rectron her301-her308.pdf Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD T/R
Produkt ist nicht verfügbar
HER308-TP HER308-TP Micro Commercial Components 46930232385051848her301-308do-201ad.pdf Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD T/R
Produkt ist nicht verfügbar
HER308-TP HER308-TP Micro Commercial Co HER301_-_HER308.pdf Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
HER308G Taiwan Semiconductor her301g20series_c10.pdf Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD
Produkt ist nicht verfügbar
HER308G A0 HER308G A0 Taiwan Semiconductor 79her301g20series_f14.pdf Diode Switching 1KV 3A 2-Pin DO-201AD Ammo
Produkt ist nicht verfügbar
HER308G A0G HER308G A0G Taiwan Semiconductor her301gseries_i2105.pdf Rectifier Diode Switching 1KV 3A 75ns Automotive 2-Pin DO-201AD Ammo
Produkt ist nicht verfügbar
HER308G B0G HER308G B0G Taiwan Semiconductor Corporation HER301G%20SERIES_I2105.pdf Description: DIODE GEN PURP 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max): 1000 V
Produkt ist nicht verfügbar
HER308G R0 HER308G R0 Taiwan Semiconductor her301gseries_i2105.pdf Diode Switching 1KV 3A 2-Pin DO-201AD
Produkt ist nicht verfügbar
HER308G R0 HER308G R0 Taiwan Semiconductor her301gseries_i2105.pdf Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD
Produkt ist nicht verfügbar
HER308G R0G HER308G R0G Taiwan Semiconductor her301gseries_i2105.pdf Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD
Produkt ist nicht verfügbar
HER308G-AP HER308G-AP Micro Commercial Components her301gher308gdo-201ad.pdf Diode Switching 1KV 3A 2-Pin DO-201AD Ammo
Produkt ist nicht verfügbar
HER308G-AP HER308G-AP Micro Commercial Co HER301G~HER308G(DO-201AD).pdf Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
HER308G-K HER308G-K Taiwan Semiconductor Corporation Description: 75NS, 3A, 1000V, HIGH EFFICIENT
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
HER308G-K A0G HER308G-K A0G Taiwan Semiconductor 462her301g-k20series_b1706.pdf Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD Ammo
Produkt ist nicht verfügbar
HER308G-T HER308G-T Rectron her301g-308g.pdf Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD T/R
Produkt ist nicht verfügbar
HER308G-TP HER308G-TP Micro Commercial Components her301gher308gdo-201ad-v1.pdf Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD T/R
Produkt ist nicht verfügbar
HER308G-TP HER308G-TP Micro Commercial Co HER301G~HER308G(DO-201AD).pdf Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
HER308GA-G Comchip Technology HER301G-G%20Thru.%20HER308G-G%20RevA.pdf Description: DIODE GEN PURP 1KV 3A DO27
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
HER308GHA0G Taiwan Semiconductor her301gseries_i2105.pdf 3A,1000V, GLASS PASSIVATED HIGH EFFICIENT RECTIFIER
Produkt ist nicht verfügbar
HER308GHR0G Taiwan Semiconductor her301g20series_h15.pdf HER308GHR0G
Produkt ist nicht verfügbar
HER308GT-G Comchip Technology HER301G-G%20Thru.%20HER308G-G%20RevA.pdf Description: DIODE GEN PURP 1KV 3A DO27
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
HER308
Produktcode: 31476		 description HER301-8_UF5401-8.pdf
HER308
Hersteller: YJ
Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle
Gehäuse: DO-27
Vrr, V: 1000
Iav, A: 3
Trr, ns: 70
verfügbar: 652 Stück
Anzahl Preis ohne MwSt
1+0.1 EUR
10+ 0.088 EUR
100+ 0.074 EUR
HER308
Produktcode: 172115		 description HER301-8_UF5401-8.pdf
HER308
Hersteller: MIC
Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle
Gehäuse: DO-201AD
Vrr, V: 1000 V
Iav, A: 0,125
Trr, ns: 70 ns
auf Bestellung 650 Stück:
Lieferzeit 21-28 Tag (e)
HER308 description HER301_8.pdf
HER308
Hersteller: CDIL
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 150A; DO201AD; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 70pF
Kind of package: Ammo Pack
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.7V
Reverse recovery time: 50ns
auf Bestellung 3475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
315+0.23 EUR
585+ 0.12 EUR
650+ 0.11 EUR
760+ 0.094 EUR
795+ 0.09 EUR
Mindestbestellmenge: 315
HER308 description HER301_SER.pdf
HER308
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 125A; DO201AD; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
auf Bestellung 1115 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
315+0.23 EUR
530+ 0.14 EUR
590+ 0.12 EUR
705+ 0.1 EUR
750+ 0.096 EUR
Mindestbestellmenge: 315
HER308 description HER301_SER.pdf
HER308
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 125A; DO201AD; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1115 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
315+0.23 EUR
530+ 0.14 EUR
590+ 0.12 EUR
705+ 0.1 EUR
750+ 0.096 EUR
Mindestbestellmenge: 315
HER308 description HER30x-DTE.pdf
HER308
Hersteller: DC COMPONENTS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 150A; DO27; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: Ammo Pack
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1.7V
Reverse recovery time: 100ns
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
HER308 description HER301_8.pdf
HER308
Hersteller: CDIL
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 150A; DO201AD; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 70pF
Kind of package: Ammo Pack
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1.7V
Reverse recovery time: 50ns
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3475 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
315+0.23 EUR
585+ 0.12 EUR
650+ 0.11 EUR
760+ 0.094 EUR
795+ 0.09 EUR
Mindestbestellmenge: 315
HER308 description
Hersteller: Yangjie Technology
Випрямний діод вивідний; Io, A = 3; Uзвор, В = 1 000; Uf (max), В = 1,7; If, А = 3; Тексп, °C = -55...+125; DO-27
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
23+0.3 EUR
25+ 0.25 EUR
100+ 0.21 EUR
Mindestbestellmenge: 23
HER308 description
Hersteller: DC Components
Випрямний діод вивідний; Io, A = 3; Uзвор, В = 1 000; Uf (max), В = 1,7; If, А = 3; trr, нс = 75 мс; Тексп, °C = -65...+150; I, мкА @ Ur, В = 10 @ 1000; DO-27
auf Bestellung 368 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
23+0.3 EUR
25+ 0.25 EUR
100+ 0.21 EUR
Mindestbestellmenge: 23
HER308G HER301G_SER.pdf
HER308G
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 125A; DO201AD; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
auf Bestellung 1020 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
195+0.37 EUR
440+ 0.16 EUR
490+ 0.15 EUR
640+ 0.11 EUR
Mindestbestellmenge: 195
HER308G HER301G_SER.pdf
HER308G
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 125A; DO201AD; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; superfast switching
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1020 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
195+0.37 EUR
440+ 0.16 EUR
490+ 0.15 EUR
640+ 0.11 EUR
Mindestbestellmenge: 195
HER308G 13-HER30XG(UF300XG)-(DO-27).pdf
HER308G
Hersteller: HY Electronic (Cayman) Limited
Description: DIODE GEN PURP 1KV 3A DO27
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 1200 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
41+0.64 EUR
Mindestbestellmenge: 41
HER308G 13-HER30XG(UF300XG)-(DO-27).pdf
HER308G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1546 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
20+1.35 EUR
23+ 1.14 EUR
100+ 0.79 EUR
500+ 0.62 EUR
Mindestbestellmenge: 20
HER308G 13-HER30XG(UF300XG)-(DO-27).pdf
HER308G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1250 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1250+0.5 EUR
Mindestbestellmenge: 1250
HER308GH
HER308GH
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 3A, 1000V, HIGH EFFICIENT
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
20+1.35 EUR
23+ 1.14 EUR
100+ 0.79 EUR
500+ 0.62 EUR
Mindestbestellmenge: 20
HER308GH
HER308GH
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 3A, 1000V, HIGH EFFICIENT
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1250+0.5 EUR
2500+ 0.45 EUR
Mindestbestellmenge: 1250
HER308 description
HER308 Диоды
auf Bestellung 103 Stücke:
Lieferzeit 7-21 Tag (e)
HER308; (3A 1000V); 75ns YANGJIE на ленте; корпус: DO-201AD
auf Bestellung 7110 Stücke:
Lieferzeit 14-21 Tag (e)
HER308G 13-HER30XG(UF300XG)-(DO-27).pdf
Hersteller: Yangzhou Yangjie Electronic Imp & Exp.Co.Ltd
HER308 3.0A 1000V DO-27
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)
TCDG0ER308
auf Bestellung 310000 Stücke:
Lieferzeit 21-28 Tag (e)
Діод ультрашвидкий HER308 3A 1000V 70ns, DO-27
auf Bestellung 456 Stücke:
Lieferzeit 14-21 Tag (e)
UF5408 uf5400.pdf
Hersteller: MIC
3A; 1000V; ultra fast <75ns packaging: ammo; equivalent: HER308; SF310 UF5408 diode rectifying DP UF5408
Anzahl je Verpackung: 1250 Stücke
auf Bestellung 2930 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1250+0.18 EUR
Mindestbestellmenge: 1250
UF5408 uf5400.pdf
Hersteller: LGE
3A; 1000V; ultra fast <75ns packaging: ammo; equivalent: HER308; SF310 UF5408 diode rectifying DP UF5408 q
Anzahl je Verpackung: 1250 Stücke
auf Bestellung 1900 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1250+0.19 EUR
Mindestbestellmenge: 1250
UF5408 uf5400.pdf
Hersteller: LGE
3A; 1000V; ultra fast <75ns packaging: ammo; equivalent: HER308; SF310 UF5408 diode rectifying DP UF5408 q
Anzahl je Verpackung: 1250 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1250+0.19 EUR
Mindestbestellmenge: 1250
UF5408 uf5400.pdf
Hersteller: MIC
3A; 1000V; ultra fast <75ns packaging: ammo; equivalent: HER308; SF310 UF5408 diode rectifying DP UF5408
Anzahl je Verpackung: 1250 Stücke
auf Bestellung 6250 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
1250+0.18 EUR
Mindestbestellmenge: 1250
HER308-AP
Produktcode: 15448		 HER301_-_HER308.pdf
Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle
Produkt ist nicht verfügbar
HER308G
Produktcode: 186358		 13-HER30XG(UF300XG)-(DO-27).pdf
Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden
Produkt ist nicht verfügbar
ER308_R2_00001 ER300_SERIES.pdf
ER308_R2_00001
Hersteller: Panjit International Inc.
Description: DIODE GEN PURP 800V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
ER308_R2_00001 ER300_SERIES.pdf
ER308_R2_00001
Hersteller: Panjit International Inc.
Description: DIODE GEN PURP 800V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
ECD-G0ER308 ECD-G_%28Hi-Q%29.pdf
ECD-G0ER308
Hersteller: Panasonic Electronic Components
Description: CAP CER 0.3PF 25V C0G/NP0 0402
Tolerance: ±0.05pF
Features: High Q, Low Loss
Packaging: Tape & Reel (TR)
Voltage - Rated: 25V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.022" (0.55mm)
Part Status: Obsolete
Capacitance: 0.3 pF
Produkt ist nicht verfügbar
ECD-G0ER308 ECD-G_%28Hi-Q%29.pdf
ECD-G0ER308
Hersteller: Panasonic Electronic Components
Description: CAP CER 0.3PF 25V C0G/NP0 0402
Tolerance: ±0.05pF
Features: High Q, Low Loss
Packaging: Cut Tape (CT)
Voltage - Rated: 25V
Package / Case: 0402 (1005 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.022" (0.55mm)
Part Status: Obsolete
Capacitance: 0.3 pF
Produkt ist nicht verfügbar
ECD-GZER308 ECD-G_%28Hi-Q%29.pdf
ECD-GZER308
Hersteller: Panasonic Electronic Components
Description: CAP CER 0.3PF 25V C0G/NP0 0201
Tolerance: ±0.05pF
Features: High Q, Low Loss
Packaging: Tape & Reel (TR)
Voltage - Rated: 25V
Package / Case: 0201 (0603 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.013" (0.33mm)
Part Status: Obsolete
Capacitance: 0.3 pF
Produkt ist nicht verfügbar
ECD-GZER308 ECD-G_%28Hi-Q%29.pdf
ECD-GZER308
Hersteller: Panasonic Electronic Components
Description: CAP CER 0.3PF 25V C0G/NP0 0201
Packaging: Cut Tape (CT)
Tolerance: ±0.05pF
Features: High Q, Low Loss
Voltage - Rated: 25V
Package / Case: 0201 (0603 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: RF, Microwave, High Frequency
Thickness (Max): 0.013" (0.33mm)
Part Status: Obsolete
Capacitance: 0.3 pF
Produkt ist nicht verfügbar
HER308 description HER30x-DTE.pdf
HER308
Hersteller: DC COMPONENTS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 150A; DO27; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: Ammo Pack
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1.7V
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
HER308 description HER30x-DTE.pdf
HER308
Hersteller: DC COMPONENTS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 150A; DO27; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: Ammo Pack
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1.7V
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
HER308 description HER30x-DTE.pdf
HER308
Hersteller: DC COMPONENTS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 150A; DO27; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: Ammo Pack
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1.7V
Reverse recovery time: 100ns
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
HER308 R0 her301_d11.pdf
HER308 R0
Hersteller: Taiwan Semiconductor
Diode Switching 1KV 3A 2-Pin DO-201AD T/R
Produkt ist nicht verfügbar
HER308-AP HER301_-_HER308.pdf
HER308-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
HER308-T her301-her308.pdf
HER308-T
Hersteller: Rectron
Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD T/R
Produkt ist nicht verfügbar
HER308-TP 46930232385051848her301-308do-201ad.pdf
HER308-TP
Hersteller: Micro Commercial Components
Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD T/R
Produkt ist nicht verfügbar
HER308-TP HER301_-_HER308.pdf
HER308-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
HER308G her301g20series_c10.pdf
Hersteller: Taiwan Semiconductor
Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD
Produkt ist nicht verfügbar
HER308G A0 79her301g20series_f14.pdf
HER308G A0
Hersteller: Taiwan Semiconductor
Diode Switching 1KV 3A 2-Pin DO-201AD Ammo
Produkt ist nicht verfügbar
HER308G A0G her301gseries_i2105.pdf
HER308G A0G
Hersteller: Taiwan Semiconductor
Rectifier Diode Switching 1KV 3A 75ns Automotive 2-Pin DO-201AD Ammo
Produkt ist nicht verfügbar
HER308G B0G HER301G%20SERIES_I2105.pdf
HER308G B0G
Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - DC Reverse (Vr) (Max): 1000 V
Produkt ist nicht verfügbar
HER308G R0 her301gseries_i2105.pdf
HER308G R0
Hersteller: Taiwan Semiconductor
Diode Switching 1KV 3A 2-Pin DO-201AD
Produkt ist nicht verfügbar
HER308G R0 her301gseries_i2105.pdf
HER308G R0
Hersteller: Taiwan Semiconductor
Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD
Produkt ist nicht verfügbar
HER308G R0G her301gseries_i2105.pdf
HER308G R0G
Hersteller: Taiwan Semiconductor
Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD
Produkt ist nicht verfügbar
HER308G-AP her301gher308gdo-201ad.pdf
HER308G-AP
Hersteller: Micro Commercial Components
Diode Switching 1KV 3A 2-Pin DO-201AD Ammo
Produkt ist nicht verfügbar
HER308G-AP HER301G~HER308G(DO-201AD).pdf
HER308G-AP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
HER308G-K
HER308G-K
Hersteller: Taiwan Semiconductor Corporation
Description: 75NS, 3A, 1000V, HIGH EFFICIENT
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
HER308G-K A0G 462her301g-k20series_b1706.pdf
HER308G-K A0G
Hersteller: Taiwan Semiconductor
Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD Ammo
Produkt ist nicht verfügbar
HER308G-T her301g-308g.pdf
HER308G-T
Hersteller: Rectron
Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD T/R
Produkt ist nicht verfügbar
HER308G-TP her301gher308gdo-201ad-v1.pdf
HER308G-TP
Hersteller: Micro Commercial Components
Rectifier Diode Switching 1KV 3A 75ns 2-Pin DO-201AD T/R
Produkt ist nicht verfügbar
HER308G-TP HER301G~HER308G(DO-201AD).pdf
HER308G-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 1KV 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
HER308GA-G HER301G-G%20Thru.%20HER308G-G%20RevA.pdf
Hersteller: Comchip Technology
Description: DIODE GEN PURP 1KV 3A DO27
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
HER308GHA0G her301gseries_i2105.pdf
Hersteller: Taiwan Semiconductor
3A,1000V, GLASS PASSIVATED HIGH EFFICIENT RECTIFIER
Produkt ist nicht verfügbar
HER308GHR0G her301g20series_h15.pdf
Hersteller: Taiwan Semiconductor
HER308GHR0G
Produkt ist nicht verfügbar
HER308GT-G HER301G-G%20Thru.%20HER308G-G%20RevA.pdf
Hersteller: Comchip Technology
Description: DIODE GEN PURP 1KV 3A DO27
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-27
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Produkt ist nicht verfügbar
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