Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-247
Uds,V: 200
Idd,A: 94
Rds(on), Ohm: 0.023
Ciss, pF/Qg, nC: 6040/180
JHGF: THT

Hersteller: IR
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-247AC
Uds,V: 100 V
Id,A: 23 A
Rds(on),Om: 0,117 Ohm
Ciss, pF/Qg, nC: 1300/97
/: THT

Hersteller: Fairchild
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-247
Uds,V: 200
Id,A: 12
Rds(on),Om: 0.5
Ciss, pF/Qg, nC: 1400/38
/: THT

Hersteller: Vishay
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-247
Uds,V: 200 V
Id,A: 12 А
Rds(on),Om: 0,5 Ohm
Ciss, pF/Qg, nC: 1200/44

Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 94A; 580W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 94A
Power dissipation: 580W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced

Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 94A; 580W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 94A
Power dissipation: 580W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Hersteller: Infineon Technologies
Trans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Trans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Trans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Trans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Trans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Trans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: INFINEON
Description: INFINEON - IRFP90N20DPBF - Leistungs-MOSFET, n-Kanal, 200 V, 94 A, 0.023 ohm, TO-247AC, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 94A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5V
euEccn: NLR
Verlustleistung: 580W
Bauform - Transistor: TO-247AC
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.023ohm
SVHC: No SVHC (23-Jan-2024)

Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 94A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 56A, 10V
Power Dissipation (Max): 580W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6040 pF @ 25 V

Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -21A; 120W; TO247AC
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -21A
Power dissipation: 120W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Gate charge: 64.7nC
Kind of package: tube
Kind of channel: enhanced

Hersteller: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -21A; 120W; TO247AC
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -21A
Power dissipation: 120W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: THT
Gate charge: 64.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Hersteller: Infineon Technologies
Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: INFINEON
Description: INFINEON - IRFP9140NPBF - Leistungs-MOSFET, p-Kanal, 100 V, 23 A, 0.117 ohm, TO-247AC, Durchsteckmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 23A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 120W
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.117ohm
SVHC: No SVHC (23-Jan-2024)

Hersteller: Infineon Technologies
Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Trans MOSFET P-CH 100V 23A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 23A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 13A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V

Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 180W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced

Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 180W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Hersteller: Vishay
Trans MOSFET P-CH 100V 21A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Vishay
Trans MOSFET P-CH 100V 21A 3-Pin(3+Tab) TO-247AC

Hersteller: Vishay
Trans MOSFET P-CH 100V 21A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Vishay
Trans MOSFET P-CH 100V 21A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Vishay
Trans MOSFET P-CH 100V 21A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: VISHAY
Description: VISHAY - IRFP9140PBF - Leistungs-MOSFET, Universal, p-Kanal, 100 V, 21 A, 0.2 ohm, TO-247AC, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 21A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 180W
Bauform - Transistor: TO-247AC
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.2ohm

Hersteller: Vishay
Trans MOSFET P-CH 100V 21A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Vishay
Trans MOSFET P-CH 100V 21A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V

Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.5A; 150W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.5A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhanced

Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.5A; 150W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.5A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Hersteller: VISHAY
Description: VISHAY - IRFP9240PBF - Leistungs-MOSFET, p-Kanal, 200 V, 12 A, 0.5 ohm, TO-247AC, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 12A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 4V
euEccn: NLR
Verlustleistung: 150W
Bauform - Transistor: TO-247AC
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.5ohm

Hersteller: Infineon
Транз. Пол. БМ TO247-3 P-канальный MOSFET Vdss=200V, Id=12A, Pdmax=150W

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 12A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 7.2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V

Hersteller: Vishay/IR
TO-247AC

Hersteller: IR
08+;

Hersteller: Samsung

Hersteller: FS
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220
Uds,V: 100
Id,A: 19
Rds(on),Om: 0.2
Ciss, pF/Qg, nC: 1200/37
/: THT

Transistoren > Transistoren P-Kanal-Feld

Hersteller: Infineon Technologies
Trans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Trans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 13A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25

Hersteller: Infineon Technologies
Trans MOSFET P-CH Si 100V 23A 3-Pin(3+Tab) TO-247AC Tube

Hersteller: Infineon Technologies
Description: MOSFET P-CH 100V 23A TO247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 13A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25

Hersteller: International Rectifier HiRel Products
Trans MOSFET P-CH Si 100V 23A 3-Pin(3+Tab)

Hersteller: Vishay
Trans MOSFET P-CH 200V 12A 3-Pin(3+Tab) TO-247AC

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 12A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 7.2A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V

Hersteller: Vishay
Trans MOSFET P-CH 200V 12A 3-Pin(3+Tab) TO-247AC

Hersteller: Vishay
Trans MOSFET P-CH 200V 12A 3-Pin(3+Tab) TO-247AC

Hersteller: Vishay
Trans MOSFET P-CH 200V 12A 3-Pin(3+Tab) TO-247AC