Produkte > NSV
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| NSVMMBD1501ALT3G | onsemi | Description: DIODE STANDARD 200V 200MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 180 V Qualification: AEC-Q101 | auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBD1501ALT3G | onsemi | Description: DIODE STANDARD 200V 200MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 180 V Qualification: AEC-Q101 | auf Bestellung 40065 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBD1501ALT3G | onsemi | Small Signal Switching Diodes 180V FAST RECTIFIER GP | auf Bestellung 18628 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBD1504ALT1G | onsemi | Description: HIGH CONDUCTANCE LOW LEAKAGE DIO Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 180 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBD1504ALT1G | onsemi | Description: HIGH CONDUCTANCE LOW LEAKAGE DIO Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-23-3 (TO-236) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 180 V Qualification: AEC-Q101 | auf Bestellung 2915 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBD352WT1G | onsemi | Description: DIODE SCHOTTKY 7V 200MW SC-70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Diode Type: Schottky - 1 Pair Series Connection Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 1pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 7V Supplier Device Package: SC-70-3 (SOT323) Grade: Automotive Power Dissipation (Max): 200 mW | auf Bestellung 20362 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBD352WT1G | ONSEMI | Category: SMD Schottky diodes Description: Diode: Schottky switching; SC70,SOT323; SMD; 7V; 10mA; reel,tape Type of diode: Schottky switching Case: SC70; SOT323 Mounting: SMD Max. off-state voltage: 7V Load current: 10mA Semiconductor structure: double series Max. forward voltage: 0.6V Kind of package: reel; tape Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBD352WT1G | onsemi | Schottky Diodes & Rectifiers SS SHKY DIO 7V TR | auf Bestellung 2308 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBD352WT1G | onsemi | Description: DIODE SCHOTTKY 7V 200MW SC-70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Diode Type: Schottky - 1 Pair Series Connection Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 1pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 7V Supplier Device Package: SC-70-3 (SOT323) Grade: Automotive Power Dissipation (Max): 200 mW | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBD353LT1 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NSVMMBD353LT1G | onsemi | Schottky Diodes & Rectifiers SS SHKY DIO 7V TR | auf Bestellung 65 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBD353LT1G | onsemi | Description: DIODE SCHOTTKY 7V 225MW SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: Schottky - 1 Pair Series Connection Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 1pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 7V Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power Dissipation (Max): 225 mW Qualification: AEC-Q101 | auf Bestellung 1870 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBD353LT1G | onsemi | Description: DIODE SCHOTTKY 7V 225MW SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: Schottky - 1 Pair Series Connection Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 1pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 7V Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power Dissipation (Max): 225 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBD353LT1G | ONSEMI | Category: SMD universal diodes Description: Diode: switching; SMD; 7V; 10ns; SOT23; Ufmax: 0.6V; 300mW; reel,tape Type of diode: switching Case: SOT23 Mounting: SMD Max. off-state voltage: 7V Semiconductor structure: double series Max. forward voltage: 0.6V Kind of package: reel; tape Features of semiconductor devices: PIN; RF Application: automotive industry Reverse recovery time: 10ns Power dissipation: 0.3W | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBD354LT1G | onsemi | Description: DIODE SCHOTTKY 7V 300MW SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: Schottky - 1 Pair Common Cathode Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 1pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 7V Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power Dissipation (Max): 300 mW Qualification: AEC-Q101 | auf Bestellung 1065 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBD354LT1G | ONSEMI | Category: SMD universal diodes Description: Diode: switching; SMD; 7V; SOT23; Ufmax: 0.6V; 300mW; reel,tape Type of diode: switching Case: SOT23 Mounting: SMD Max. off-state voltage: 7V Semiconductor structure: common cathode; double Max. forward voltage: 0.6V Kind of package: reel; tape Power dissipation: 0.3W Features of semiconductor devices: PIN; RF Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBD354LT1G | onsemi | Schottky Diodes & Rectifiers SS SOT23 SHKY DIO 7V TR | auf Bestellung 5111 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBD354LT1G | onsemi | Description: DIODE SCHOTTKY 7V 300MW SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: Schottky - 1 Pair Common Cathode Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 1pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 7V Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Power Dissipation (Max): 300 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBD717LT1G | ON Semiconductor | Description: DIODE SCHOTTKY 20V SC70-3 | Produkt ist nicht verfügbar | Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBD717LT1G | onsemi | Schottky Diodes & Rectifiers SS SC70 SHKY DIO 20V TR | auf Bestellung 2841 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT2222AM3T5G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.64W; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.64W Case: SOT723 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT2222AM3T5G | onsemi | Description: TRANS NPN 40V 0.6A SOT-723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 300MHz Supplier Device Package: SOT-723 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 640 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT2222AM3T5G | onsemi | Description: TRANS NPN 40V 0.6A SOT-723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 300MHz Supplier Device Package: SOT-723 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 640 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT2222AM3T5G | onsemi | Bipolar Transistors - BJT SS SOT-723 GP TRANSISTOR | auf Bestellung 24753 Stücke: Lieferzeit 374-378 Tag (e) |
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| NSVMMBT2222AM3T5G | onsemi | Description: TRANS NPN 40V 0.6A SOT-723 | auf Bestellung 55 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT2222ATT1G | onsemi | Description: TRANS NPN 40V 0.6A SC75 SOT416 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 300MHz Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 150 mW | auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT2222ATT1G | onsemi | Bipolar Transistors - BJT SS SC75 GP XSTR NPN 75V | auf Bestellung 219 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT2222ATT1G | onsemi | Description: TRANS NPN 40V 0.6A SC75 SOT416 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 300MHz Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 150 mW | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT2222ATT1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC75; SOT416 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT2907AM3T5G | onsemi | Bipolar Transistors - BJT SS GP PNP TRANSISTOR | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT2907AM3T5G | ONSEMI | Description: ONSEMI - NSVMMBT2907AM3T5G - Bipolarer Einzeltransistor (BJT), PNP, 60 V, 600 mA, 640 mW, SOT-723, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 50hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N MSL: MSL 1 - unbegrenzt Verlustleistung: 640mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-723 Dauerkollektorstrom: 600mA Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 60V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP usEccn: EAR99 Übergangsfrequenz: 200MHz Betriebstemperatur, max.: 150°C | auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 35 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT2907AM3T5G | onsemi | Description: TRANS PNP 60V 0.6A SOT-723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SOT-723 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 640 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT2907AM3T5G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.64W; SOT723 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.64W Case: SOT723 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT2907AM3T5G | ONSEMI | Description: ONSEMI - NSVMMBT2907AM3T5G - Bipolarer Einzeltransistor (BJT), PNP, 60 V, 600 mA, 640 mW, SOT-723, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 50hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt Verlustleistung: 640mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOT-723 Dauerkollektorstrom: 600mA Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 60V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP usEccn: EAR99 Übergangsfrequenz: 200MHz Betriebstemperatur, max.: 150°C | auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT2907AM3T5G | onsemi | Description: TRANS PNP 60V 0.6A SOT-723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SOT-723 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 640 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT2907AWT1G | onsemi | Description: TRANS PNP 60V 0.6A SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SC-70-3 (SOT323) Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 150 mW Qualification: AEC-Q101 | auf Bestellung 3085 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT2907AWT1G | onsemi | Bipolar Transistors - BJT SS SC70 GP XSTR PNP 60V | auf Bestellung 6494 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT2907AWT1G | onsemi | Description: TRANS PNP 60V 0.6A SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SC-70-3 (SOT323) Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 150 mW Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT2907AWT1G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT3906TT1G | onsemi | Description: TRANS PNP 40V 0.2A SC75 SOT416 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT3906TT1G | onsemi | Bipolar Transistors - BJT SMALL SIGNAL GENERAL | auf Bestellung 12437 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT3906TT1G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.2W Case: SC75; SOT416 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT3906TT1G | onsemi | Description: TRANS PNP 40V 0.2A SC75 SOT416 | auf Bestellung 3188 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT4401WT1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 0.6A; 0.15W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.6A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT4401WT1G | onsemi | Description: TRANS NPN 40V 0.6A SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SC-70-3 (SOT323) Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 150 mW Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT4401WT1G | onsemi | Bipolar Transistors - BJT SS SC70 GP XSTR NPN 40V | auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT4401WT1G | onsemi | Description: TRANS NPN 40V 0.6A SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SC-70-3 (SOT323) Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 150 mW Qualification: AEC-Q101 | auf Bestellung 8620 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT5087LT1G | onsemi | Description: TRANS PNP 50V 0.05A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V Frequency - Transition: 40MHz Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 225 mW Qualification: AEC-Q101 | auf Bestellung 123729 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT5087LT1G | onsemi | Bipolar Transistors - BJT SS SOT23 LN XSTR PNP 50V | auf Bestellung 10657 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT5087LT1G | onsemi | Description: TRANS PNP 50V 0.05A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V Frequency - Transition: 40MHz Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 225 mW Qualification: AEC-Q101 | auf Bestellung 123000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT5087LT1G | ONSEMI | Description: ONSEMI - NSVMMBT5087LT1G - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 153000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVMMBT5087LT1G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.05A; 0.25W; SOT23,TO236AB Mounting: SMD Collector-emitter voltage: 50V Power dissipation: 0.25W Polarisation: bipolar Application: automotive industry Type of transistor: PNP Current gain: 250...800 Kind of package: reel; tape Case: SOT23; TO236AB Frequency: 40MHz Collector current: 50mA | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT5087LT3G | onsemi | Description: TRANS PNP 50V 0.05A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V Frequency - Transition: 40MHz Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 225 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT5087LT3G | onsemi | Bipolar Transistors - BJT SS SOT23 LN XSTR PNP 50V | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT5088LT3G | onsemi | Description: TRANS NPN 30V 0.05A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V Frequency - Transition: 50MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 225 mW | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT5088LT3G | onsemi | Bipolar Transistors - BJT SS SOT23 LN XSTR NPN 35V | Produkt ist nicht verfügbar | Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT5088LT3G | onsemi | Description: TRANS NPN 30V 0.05A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100µA, 5V Frequency - Transition: 50MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 225 mW | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT5401LT3G | onsemi | Description: TRANS PNP 150V 0.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 225 mW | auf Bestellung 3550 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT5401LT3G | onsemi | Bipolar Transistors - BJT SS SOT23 HV XSTR PNP 150V | auf Bestellung 10002 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT5401LT3G | onsemi | Description: TRANS PNP 150V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 225 mW | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT5401M3T5G | onsemi | Description: TRANS PNP 150V 0.06A SOT-723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 180MHz Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 60 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 130 mW | auf Bestellung 3324 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT5401M3T5G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 150V; 0.06A; 0.25W; SOT723 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 60mA Power dissipation: 0.25W Case: SOT723 Current gain: 60...240 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT5401M3T5G | onsemi | Description: TRANS PNP 150V 0.06A SOT-723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 180MHz Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 60 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 130 mW | Produkt ist nicht verfügbar | Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT5401M3T5G | onsemi | Bipolar Transistors - BJT 150 V, 60 mA | auf Bestellung 6767 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT5401WT1G | ONSEMI | Description: ONSEMI - NSVMMBT5401WT1G - Bipolarer Einzeltransistor (BJT), PNP, 150 V, 500 mA, 400 mW, SOT-323, Oberflächenmontage tariffCode: 85413000 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 50hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 500mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 400mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 150V productTraceability: Yes-Date/Lot Code Wandlerpolarität: PNP Übergangsfrequenz: 100MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 570 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT5401WT1G | onsemi | Bipolar Transistors - BJT PNP HIGH VOLTAGE TRA | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT5401WT1G | onsemi | Description: TRANS PNP 150V 0.5A SC70-3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SC-70-3 (SOT323) Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 400 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT5401WT1G | onsemi | Description: TRANS PNP 150V 0.5A SC70-3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: SC-70-3 (SOT323) Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 400 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT5401WT1G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 150V; 0.5A; 0.2W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 150V Collector current: 0.5A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 60...240 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT5550LT1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.6A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 60...250 Mounting: SMD Kind of package: reel; tape Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT5550LT1G | onsemi | Description: TRANS NPN 140V 0.6A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 225 mW Qualification: AEC-Q101 | auf Bestellung 525 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT5550LT1G | onsemi | Bipolar Transistors - BJT SS SOT23 HV XSTR NPN 160V | auf Bestellung 5569 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT5550LT1G | onsemi | Description: TRANS NPN 140V 0.6A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 225 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT5551M3T5G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 160V; 0.06A; 0.64W; SOT723 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 60mA Power dissipation: 0.64W Case: SOT723 Current gain: 80...250 Mounting: SMD Kind of package: reel; tape Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT5551M3T5G | onsemi | Description: TRANS NPN 160V 0.06A SOT-723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SOT-723 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 60 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 265 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT5551M3T5G | onsemi | Bipolar Transistors - BJT SOT-723 GP NPN TRANS | auf Bestellung 15951 Stücke: Lieferzeit 374-378 Tag (e) |
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| NSVMMBT5551M3T5G | onsemi | Description: TRANS NPN 160V 0.06A SOT-723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SOT-723 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 60 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 265 mW Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT589LT1G | onsemi | Bipolar Transistors - BJT SS LS XSTR PNP 50V | auf Bestellung 621 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT589LT1G | onsemi | Description: TRANS PNP 30V 1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 310 mW | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT589LT1G | ONSEMI | Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 1A; 0.31W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 1A Power dissipation: 0.31W Case: SOT23; TO236AB Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT589LT1G | onsemi | Description: TRANS PNP 30V 1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 310 mW | auf Bestellung 2613 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT6429LT1G | onsemi | Description: TRANS NPN 45V 0.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V Frequency - Transition: 700MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT6429LT1G | ONSEMI | Description: ONSEMI - NSVMMBT6429LT1G - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 200 mA, 225 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 500hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 200mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 225mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 45V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 700MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 7315 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVMMBT6429LT1G | onsemi | Description: TRANS NPN 45V 0.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 100µA, 5V Frequency - Transition: 700MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 300 mW | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT6429LT1G | onsemi | Bipolar Transistors - BJT NPN Bipolar Trnsistr | auf Bestellung 7654 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT6429LT1G | ONSEMI | Description: ONSEMI - NSVMMBT6429LT1G - Bipolarer Einzeltransistor (BJT), NPN, 45 V, 200 mA, 225 mW, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 500hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Dauer-Kollektorstrom: 200mA MSL: MSL 1 - unbegrenzt usEccn: EAR99 euEccn: NLR Verlustleistung: 225mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 45V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN Übergangsfrequenz: 700MHz Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 7165 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVMMBT6517LT1G | ON Semiconductor | Description: TRANS NPN 350V 0.1A SOT23 | auf Bestellung 120000 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBT6520LT1G | onsemi | Description: TRANS PNP 350V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 225 mW Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT6520LT1G | onsemi | Bipolar Transistors - BJT High Voltage PNP Bipolar Transistor | auf Bestellung 2662 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBT6520LT1G | onsemi | Description: TRANS PNP 350V 0.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 225 mW Qualification: AEC-Q101 | auf Bestellung 6379 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBTA05LT1G | onsemi | Description: TRANS NPN 60V 0.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 225 mW | auf Bestellung 422 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBTA05LT1G | ONSEMI | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 0.5A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 100 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBTA05LT1G | onsemi | Description: TRANS NPN 60V 0.5A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 225 mW | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBTA05LT1G | onsemi | Bipolar Transistors - BJT SS SOT23 DR XSTR NPN | auf Bestellung 8204 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBTA28LT1G | onsemi | Description: NPN DARLINGTON TRANSISTOR 80V AE Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Frequency - Transition: 125MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 80 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBTH10LT1G | ONSEMI | Description: ONSEMI - NSVMMBTH10LT1G - Bipolarer HF-Transistor, NPN, 25 V, 650 MHz, 300 mW, 999 A, SOT-23 tariffCode: 85412100 Transistormontage: Oberflächenmontage euEccn: NLR rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 60hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt Verlustleistung: 300mW SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: SOT-23 Dauerkollektorstrom: 999A Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 25V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN usEccn: EAR99 Übergangsfrequenz: 650MHz Betriebstemperatur, max.: 150°C | auf Bestellung 3010 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVMMBTH10LT1G | ON Semiconductor | Trans RF BJT NPN 25V 300mW Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NSVMMBTH10LT1G | onsemi | Description: RF TRANS NPN 25V 650MHZ SOT-23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 225mW Voltage - Collector Emitter Breakdown (Max): 25V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V Frequency - Transition: 650MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBTH10LT1G | onsemi | RF Bipolar Transistors SS VHF XSTR SPCL TR | auf Bestellung 1738 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSVMMBTH10LT1G | ONSEMI | Description: ONSEMI - NSVMMBTH10LT1G - Bipolarer HF-Transistor, NPN, 25 V, 650 MHz, 300 mW, 999 A, SOT-23 tariffCode: 85412100 Transistormontage: Oberflächenmontage euEccn: NLR rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 60hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N MSL: MSL 1 - unbegrenzt Verlustleistung: 300mW SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: SOT-23 Dauerkollektorstrom: 999A Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 25V productTraceability: Yes-Date/Lot Code Wandlerpolarität: NPN usEccn: EAR99 Übergangsfrequenz: 650MHz Betriebstemperatur, max.: 150°C | auf Bestellung 3010 Stücke: Lieferzeit 14-21 Tag (e) |
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