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| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| IPQC60T010S7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 174A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.06mA Supplier Device Package: PG-HDSOP-22-101 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V Qualification: AEC-Q101 | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPQC60T010S7XTMA1 | INFINEON | Description: INFINEON - IPQC60T010S7XTMA1 - Leistungs-MOSFET, n-Kanal, 600 V, 174 A, 0.01 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 174A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 694W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS SJ S7A Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.01ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPQC60T010S7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: PG-HDSOP-22-101 Vgs(th) (Max) @ Id: 4.5V @ 3.06mA Power Dissipation (Max): 694W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Current - Continuous Drain (Id) @ 25°C: 174A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPQC60T010S7XTMA1 | Infineon Technologies | MOSFETs CoolMOS S7T with embedded temperature sensor | auf Bestellung 342 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPQC60T010S7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 174A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.06mA Supplier Device Package: PG-HDSOP-22-101 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V | auf Bestellung 740 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPQC60T017S7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPQC60T017S7AXTMA1 | Infineon Technologies | MOSFETs AUTOMOTIVE_COOLMOS | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPQC60T017S7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPQC60T017S7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 113A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.88mA Supplier Device Package: PG-HDSOP-22 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPQC60T017S7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 113A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.88mA Supplier Device Package: PG-HDSOP-22 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPQC60T017S7XTMA1 | Infineon Technologies | MOSFETs HIGH POWER_NEW | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPQC60T022S7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.43mA Supplier Device Package: PG-HDSOP-22-101 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V Qualification: AEC-Q101 | auf Bestellung 90 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPQC60T022S7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.43mA Supplier Device Package: PG-HDSOP-22-101 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPQC60T022S7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.43mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPQC60T022S7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.43mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V | auf Bestellung 1637 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPQC60T040S7AXTMA1 | INFINEON | Description: INFINEON - IPQC60T040S7AXTMA1 - Leistungs-MOSFET, n-Kanal, 600 V, 54 A, 0.04 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 54A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 272W Anzahl der Pins: 22Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.04ohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPQC60T040S7AXTMA1 | Infineon Technologies | MOSFETs AUTOMOTIVE_COOLMOS | auf Bestellung 740 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPQC60T040S7AXTMA1 | INFINEON | Description: INFINEON - IPQC60T040S7AXTMA1 - Leistungs-MOSFET, n-Kanal, 600 V, 54 A, 0.04 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 54A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 272W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS SJ S7TA Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.04ohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPQC65R017CFD7AXTMA1 | Infineon Technologies | MOSFETs AUTOMOTIVE_COOLMOS | auf Bestellung 695 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPQC65R017CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 136A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Supplier Device Package: PG-HDSOP-22 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V | auf Bestellung 550 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 550 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPQC65R017CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 136A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Supplier Device Package: PG-HDSOP-22 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V | auf Bestellung 623 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPQC65R017CFD7XTMA1 | Infineon Technologies | MOSFETs HIGH POWER_NEW | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPQC65R040CFD7 | Infineon Technologies | HIGH POWER_NEW | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPQC65R040CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-HDSOP-22-1 Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Cut Tape (CT) | auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPQC65R040CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-HDSOP-22-1 Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPQC65R040CFD7AXTMA1 | INFINEON | Description: INFINEON - IPQC65R040CFD7AXTMA1 - Leistungs-MOSFET, n-Kanal, 650 V, 64 A, 0.04 ohm, HDSOP, Oberflächenmontage Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 64A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Gate-Source-Schwellenspannung, max.: 4.5V Verlustleistung: 357W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS CFD7A SJ Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.04ohm | auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPQC65R040CFD7AXTMA1 | Infineon Technologies | MOSFETs AUTOMOTIVE_COOLMOS | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPQC65R040CFD7AXTMA1 | Infineon Technologies | Trans MOSFET N-CH 650V 64A 22-Pin HDSOP EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPQC65R040CFD7AXTMA1 | INFINEON | Description: INFINEON - IPQC65R040CFD7AXTMA1 - Leistungs-MOSFET, n-Kanal, 650 V, 64 A, 0.04 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 64A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Gate-Source-Schwellenspannung, max.: 4.5V Verlustleistung: 357W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS CFD7A SJ Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.04ohm | auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPQC65R040CFD7XTMA1 | Infineon Technologies | MOSFETs 650V CoolMOS CFD7 SJ Power Device | auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPQC65R040CFD7XTMA1 | Infineon Technologies | Trans MOSFET N-CH 650V 64A 22-Pin HDSOP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPQC65R125CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-HDSOP-22-1 Vgs(th) (Max) @ Id: 4.5V @ 390µA Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive | auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPQC65R125CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-HDSOP-22-1 Vgs(th) (Max) @ Id: 4.5V @ 390µA Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPQC65R125CFD7AXTMA1 | Infineon Technologies | MOSFETs AUTOMOTIVE_COOLMOS | auf Bestellung 197 Stücke: Lieferzeit 10-14 Tag (e) |
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