Produkte > SPI

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SPI0603CT-47NJ0603L
auf Bestellung 5652 Stücke:
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SPI0603CT-5N6J0603L
auf Bestellung 5790 Stücke:
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SPI0603CT-6N8J0603L
auf Bestellung 4156 Stücke:
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SPI0603CT-8N2J0603L
auf Bestellung 6000 Stücke:
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SPI0603CT22NJ
auf Bestellung 5960 Stücke:
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SPI0603CT33NJ
auf Bestellung 6000 Stücke:
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SPI0603CT39NJ
auf Bestellung 6000 Stücke:
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SPI0603CT3N3S0603L
auf Bestellung 348000 Stücke:
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SPI0603CT3N3S(3.3N)
auf Bestellung 13000 Stücke:
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SPI0603CT4N7J
auf Bestellung 2996 Stücke:
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SPI0603CT56NJ(56N)
auf Bestellung 7000 Stücke:
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SPI0603CT68N
auf Bestellung 2860 Stücke:
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SPI0603CT8N2J
auf Bestellung 36000 Stücke:
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SPI0603T15NJ
auf Bestellung 9000 Stücke:
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SPI0603T1N8D0603L
auf Bestellung 6000 Stücke:
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SPI0603T56NJ(56N)
auf Bestellung 3900 Stücke:
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SPI0603T68NJ(68N)
auf Bestellung 40000 Stücke:
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SPI0603T6N8J(6.8N)
auf Bestellung 7000 Stücke:
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SPI0625-100M
auf Bestellung 9000 Stücke:
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SPI0625-220M
auf Bestellung 12000 Stücke:
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SPI06PP.1608/IA/HP/SPSTAUBLIDescription: STAUBLI - SPI06PP.1608/IA/HP/SP - SOCKET, SPI06PP.1608/IA/HP/SP,S00265408
tariffCode: 74122000
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 21 Stücke:
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1+294.29 EUR
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SPI06PP.7610/IA/HP/SPSTAUBLIDescription: STAUBLI - SPI06PP.7610/IA/HP/SP - SOCKET, SPI06PP.7610/IA/HP/SP,N00859309
tariffCode: 74122000
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 19 Stücke:
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2+211.51 EUR
Mindestbestellmenge: 2 Stücke
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SPI07N60C3Infineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
auf Bestellung 1500 Stücke:
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277+2.06 EUR
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SPI07N60C3(630V)
auf Bestellung 7754 Stücke:
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SPI07N60C3HKSA1Infineon TechnologiesDescription: MOSFET N-CH 650V 7.3A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Produkt ist nicht verfügbar
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SPI07N60C3XKSA1Infineon TechnologiesDescription: MOSFET N-CH 600V 7.3A TO262-3
auf Bestellung 89720 Stücke:
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SPI07N60C3XKSA1Infineon TechnologiesMOSFET N-Ch 650V 7.3A I2PAK-3
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SPI07N60C3XKSA1Infineon TechnologiesDescription: MOSFET N-CH 600V 7.3A TO262-3
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SPI07N60S5Infineon TechnologiesMOSFET N-Ch 600V 7.3A I2PAK-3 CoolMOS S5
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SPI07N60S5Infineon TechnologiesDescription: N-CHANNEL POWER MOSFET
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SPI07N60S5
auf Bestellung 6000 Stücke:
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SPI07N60S5HKSA1Infineon TechnologiesMOSFET
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SPI07N60S5HKSA1Infineon TechnologiesDescription: MOSFET N-CH 600V 7.3A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 500 Stücke
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SPI07N60S5INInfineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
auf Bestellung 373 Stücke:
Lieferzeit 10-14 Tag (e)
373+1.61 EUR
Mindestbestellmenge: 373 Stücke
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SPI07N60S5XKSA1Infineon TechnologiesMOSFET
Produkt ist nicht verfügbar
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SPI07N65C3Infineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
335+1.71 EUR
Mindestbestellmenge: 335 Stücke
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SPI07N65C3HKSA1Infineon TechnologiesDescription: MOSFET N-CH 650V 7.3A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPI07N65C3INInfineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPI07N65C3XKSA1Infineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
auf Bestellung 23000 Stücke:
Lieferzeit 10-14 Tag (e)
229+2.61 EUR
Mindestbestellmenge: 229 Stücke
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SPI08N50C3
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
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SPI08N50C3Infineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
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SPI08N50C3Infineon TechnologiesMOSFET N-Ch 560V 7.6A I2PAK-3 CoolMOS C3
Produkt ist nicht verfügbar
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SPI08N50C3HKSA1Infineon TechnologiesDescription: MOSFET N-CH 500V 7.6A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
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SPI08N50C3HKSA1Infineon TechnologiesMOSFET Order Manufacturer Part Number SPI08N50C3
Produkt ist nicht verfügbar
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SPI08N50C3INInfineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
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SPI08N50C3XKInfineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
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SPI08N50C3XKSA1Infineon TechnologiesDescription: MOSFET N-CH 560V 7.6A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Produkt ist nicht verfügbar
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SPI08N50C3XKSA1ROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - SPI08N50C3XKSA1 - SPI08N50 500V COOLMOS N-CHANNEL POWER M
tariffCode: 85412900
euEccn: TBC
hazardous: false
productTraceability: No
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
345+2.19 EUR
Mindestbestellmenge: 345 Stücke
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SPI08N80C3Infineon TechnologiesMOSFET N-Ch 800V 8A I2PAK-3 CoolMOS C3
auf Bestellung 399 Stücke:
Lieferzeit 10-14 Tag (e)
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SPI08N80C3Infineon TechnologiesDescription: MOSFET N-CH 800V 8A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 470µA
Supplier Device Package: PG-TO262-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
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SPI08N80C3XKSA1INFINEONDescription: INFINEON - SPI08N80C3XKSA1 - Leistungs-MOSFET, n-Kanal, 800 V, 8 A, 0.56 ohm, TO-262, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 800
Dauer-Drainstrom Id: 8
Qualifikation: -
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 104
Gate-Source-Schwellenspannung, max.: 3
Verlustleistung: 104
Bauform - Transistor: TO-262
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.56
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.56
SVHC: No SVHC (27-Jun-2018)
Produkt ist nicht verfügbar
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SPI08N80C3XKSA1Infineon TechnologiesMOSFET N-Ch 800V 8A I2PAK-3 CoolMOS C3
auf Bestellung 456 Stücke:
Lieferzeit 10-14 Tag (e)
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SPI08N80C3XKSA1Infineon TechnologiesDescription: MOSFET N-CH 800V 8A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 5.1A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 470µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPI09PP.1612/IA/HP/SPSTAUBLIDescription: STAUBLI - SPI09PP.1612/IA/HP/SP - SOCKET, SPI09PP.1612/IA/HP/SP
tariffCode: 74122000
productTraceability: No
rohsCompliant: YES
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 5 Stücke:
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1+641.84 EUR
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SPI09PP.7612/IA/HP/SPSTAUBLIDescription: STAUBLI - SPI09PP.7612/IA/HP/SP - SOCKET, SPI09PP.7612/IA/HP/SP
tariffCode: 74122000
productTraceability: No
rohsCompliant: YES
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
1+599.11 EUR
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SPI1005-900M
auf Bestellung 998 Stücke:
Lieferzeit 21-28 Tag (e)
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SPI100N03S2-03
auf Bestellung 7020 Stücke:
Lieferzeit 21-28 Tag (e)
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SPI100N03S2-03Infineon TechnologiesDescription: MOSFET N-CH 30V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO262-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7020 pF @ 25 V
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SPI100N03S2L-03
auf Bestellung 7020 Stücke:
Lieferzeit 21-28 Tag (e)
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SPI100N03S2L-03Infineon TechnologiesDescription: MOSFET N-CH 30V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Produkt ist nicht verfügbar
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SPI100N03S2L03Infineon TechnologiesDescription: MOSFET N-CH 30V 100A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 500 Stücke
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SPI100N08S2-07Infineon TechnologiesDescription: MOSFET N-CH 75V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Produkt ist nicht verfügbar
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SPI1026SV351838SESMART Modular TechnologiesMemory Modules DDR3 SODIMM 8GB 1Gbx64 204-Pin 1866MT/s PC3-14900 CL=13 1.35V 512Mx8 Non-ECC Dual Rank 30.00mm I-Temp
Produkt ist nicht verfügbar
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SPI1026UV351838SESMART Modular TechnologiesMemory Modules DDR3 UDIMM 8GB 1Gbx64 240-Pin 1866MT/s PC3-14900 CL=13 1.35V 512Mx8 Non-ECC Dual Rank 30.00mm I-Temp
auf Bestellung 97 Stücke:
Lieferzeit 10-14 Tag (e)
1+266.45 EUR
10+245.74 EUR
25+241.55 EUR
50+227.11 EUR
100+225.84 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SPI10N10
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
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SPI10N10Infineon TechnologiesDescription: MOSFET N-CH 100V 10.3A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.3A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 7.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 21µA
Supplier Device Package: PG-TO262-3-1
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 25 V
Produkt ist nicht verfügbar
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SPI10N10L
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
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SPI10N10LInfineon TechnologiesDescription: MOSFET N-CH 100V 10.3A I2PAK
Produkt ist nicht verfügbar
 Mindestbestellmenge: 500 Stücke
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SPI11N60C3Infineon TechnologiesMOSFET N-Ch 600V 11A I2PAK-3 CoolMOS C3
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SPI11N60C3
Produktcode: 145108
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Transistoren > MOSFET N-CH
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SPI11N60C3INFINEON09+
auf Bestellung 5030 Stücke:
Lieferzeit 21-28 Tag (e)
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SPI11N60C3HKSA1Infineon TechnologiesMOSFET Order Manufacturer Part Number SPI11N60C3
Produkt ist nicht verfügbar
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SPI11N60C3HKSA1Infineon TechnologiesDescription: MOSFET N-CH 600V 11A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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SPI11N60C3XKSA1Infineon TechnologiesMOSFET N-Ch 650V 11A I2PAK-3
Produkt ist nicht verfügbar
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SPI11N60C3XKSA1Infineon TechnologiesDescription: SPI11N60C3 - 600V COOLMOS N-CHAN
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
180+3.31 EUR
Mindestbestellmenge: 180 Stücke
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SPI11N60CFDInfineon TechnologiesTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-262 Tube
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
 Mindestbestellmenge: 28 Stücke
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SPI11N60CFDHKSA1Infineon TechnologiesDescription: MOSFET N-CH 650V 11A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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SPI11N60S5Infineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
auf Bestellung 368 Stücke:
Lieferzeit 10-14 Tag (e)
176+3.39 EUR
Mindestbestellmenge: 176 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SPI11N60S5E3046INF07+;
auf Bestellung 700 Stücke:
Lieferzeit 21-28 Tag (e)
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SPI11N65C3
auf Bestellung 950 Stücke:
Lieferzeit 21-28 Tag (e)
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SPI11N65C3HKSA1Infineon TechnologiesDescription: MOSFET N-CH 650V 11A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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SPI11N65C3INInfineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SPI11N65C3XKSA1Infineon TechnologiesDescription: MOSFET N-CH 650V 11A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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SPI125A0-5A3N1Eaton ElectricalVariable Frequency Drives - VFDs SPI9000 DC-FED INV 575V 125A HIGH OVLD
Produkt ist nicht verfügbar
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SPI12N50C3Infineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
263+2.18 EUR
Mindestbestellmenge: 263 Stücke
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SPI12N50C3Infineon TechnologiesMOSFET N-Ch 500V 11.6A I2PAK-3 CoolMOS C3
Produkt ist nicht verfügbar
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SPI12N50C3HKSA1Infineon TechnologiesDescription: MOSFET N-CH 500V 11.6A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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SPI12N50C3INInfineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 928 Stücke:
Lieferzeit 10-14 Tag (e)
182+3.03 EUR
Mindestbestellmenge: 182 Stücke
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SPI12N50C3XKSA1Infineon TechnologiesDescription: MOSFET N-CH 560V 11.6A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
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SPI12N50C3XKSA1Infineon TechnologiesMOSFET N-Ch 560V 11.6A I2PAK-3
Produkt ist nicht verfügbar
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SPI12N50C3XKSA1Infineon TechnologiesDescription: MOSFET N-CH 560V 11.6A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 950 Stücke:
Lieferzeit 10-14 Tag (e)
182+3.03 EUR
Mindestbestellmenge: 182 Stücke
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SPI1306-680M
auf Bestellung 2900 Stücke:
Lieferzeit 21-28 Tag (e)
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SPI1310T-302K
Produktcode: 112403
zu Favoriten hinzufügen Lieblingsprodukt
Drosseln > Induktivität (Drosseln) leistungs SMD
Nennwert: 3,15 мГн
Beschreibung und Eigenschaften: 3,8 Ohm
auf Bestellung: 66 St.
  • 66 St. - Lieferzeit 21-28 Tag (e)
2+0.79 EUR
10+0.7 EUR
Mindestbestellmenge: 2 St.
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SPI15N60C3Infineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 894 Stücke:
Lieferzeit 10-14 Tag (e)
162+3.69 EUR
Mindestbestellmenge: 162 Stücke
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SPI15N60C3HKSA1Infineon TechnologiesDescription: MOSFET N-CH 650V 15A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Produkt ist nicht verfügbar
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SPI15N60CFDROCHESTER ELECTRONICSDescription: ROCHESTER ELECTRONICS - SPI15N60CFD - SPI15N60 POWER FIELD-EFFECT TRANSISTOR,
tariffCode: 85412100
productTraceability: No
rohsCompliant: YES
euEccn: TBC
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: TBC
SVHC: No SVHC (27-Jun-2024)
auf Bestellung 415 Stücke:
Lieferzeit 14-21 Tag (e)
167+4.4 EUR
Mindestbestellmenge: 167 Stücke
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SPI15N60CFDInfineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9.4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 415 Stücke:
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152+3.94 EUR
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SPI15N60CFDHKSA1Infineon TechnologiesDescription: MOSFET N-CH 650V 13.4A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.4A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 9.4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 750µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
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SPI15N65C3Infineon TechnologiesMOSFET N-Ch 650V 15A I2PAK-3 CoolMOS C3
Produkt ist nicht verfügbar
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SPI15N65C3Infineon TechnologiesDescription: N-CHANNEL POWER MOSFET
Packaging: Bulk
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
166+3.45 EUR
Mindestbestellmenge: 166 Stücke
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