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AC2M0280120D

Description: SIC MOSFET N-CH 1200V 11A TO247-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A
Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 20V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V

auf Bestellung 500 Stücke:

Lieferzeit 10-14 Tag (e)

4+	5.9 EUR
10+	5.52 EUR
60+	4.41 EUR
240+	3.58 EUR
450+	2.99 EUR

Mindestbestellmenge: 4 Stücke

Im Einkaufswagen Stück im Wert von UAH

AC2M1000170D

APSEMI

Description: SIC MOSFET N-CH 1700V 6A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 20V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 0.5mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1700 V

auf Bestellung 2000 Stücke:

Lieferzeit 10-14 Tag (e)