Produkte > GD2
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GD200FFX65C6S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor Case: C6 62mm Max. off-state voltage: 650V Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Anzahl je Verpackung: 10 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD200FFX65C6S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor Case: C6 62mm Max. off-state voltage: 650V Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A | Produkt ist nicht verfügbar | |||||||||||||||||
| GD200FFY120C6S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor Case: C6 62mm Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A | Produkt ist nicht verfügbar | |||||||||||||||||
| GD200FFY120C6S | STARPOWER | Description: STARPOWER - GD200FFY120C6S - IGBT-Modul, Dreiphasen-Vollbrücke, 309 A, 1.7 V, 1.006 kW, 150 °C, Module IGBT-Technologie: Trench/Feldstop Sperrschichttemperatur Tj, max.: 150 Kollektor-Emitter-Sättigungsspannung: 1.7 Dauer-Kollektorstrom: 309 IGBT-Anschluss: Einpressmontage Kollektor-Emitter-Sättigungsspannung Vce(on): 1.7 Verlustleistung Pd: 1.006 Verlustleistung: 1.006 Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 1.2 Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2 IGBT-Konfiguration: Dreiphasen-Vollbrücke DC-Kollektorstrom: 309 Betriebstemperatur, max.: 150 SVHC: No SVHC (25-Jun-2020) | auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD200FFY120C6S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: IGBT three-phase bridge; NTC thermistor Case: C6 62mm Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Anzahl je Verpackung: 10 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD200HFU120C2S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Case: C2 62mm Collector current: 200A Pulsed collector current: 400A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Ultra Fast IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Gate-emitter voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD200HFU120C2S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Case: C2 62mm Collector current: 200A Pulsed collector current: 400A Max. off-state voltage: 1.2kV Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Technology: NPT Ultra Fast IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Gate-emitter voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||||
| GD200HFU120C2S | STARPOWER | Description: STARPOWER - GD200HFU120C2S - IGBT-Modul, Halbbrücke, 262 A, 3 V, 1.315 kW, 125 °C, Module tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: NPT Ultra Fast IGBT Sperrschichttemperatur Tj, max.: 125°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 3V Dauer-Kollektorstrom: 262A usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 3V Verlustleistung Pd: 1.315kW euEccn: NLR Verlustleistung: 1.315kW Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 1.2kV Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV IGBT-Konfiguration: Halbbrücke productTraceability: No DC-Kollektorstrom: 262A Betriebstemperatur, max.: 125°C SVHC: No SVHC (25-Jun-2020) | auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD200HFX170C2S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Case: C2 62mm Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT half-bridge Anzahl je Verpackung: 12 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD200HFX170C2S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Case: C2 62mm Max. off-state voltage: 1.7kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT half-bridge | Produkt ist nicht verfügbar | |||||||||||||||||
| GD200HFX170C2S | STARPOWER | Description: STARPOWER - GD200HFX170C2S - IGBT-Modul, Halbbrücke, 337 A, 1.85 V, 1.271 kW, 150 °C, Module tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: Trench/Feldstop Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.85V Dauer-Kollektorstrom: 337A usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 1.85V Verlustleistung Pd: 1.271kW euEccn: NLR Verlustleistung: 1.271kW Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 1.7kV Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.7kV IGBT-Konfiguration: Halbbrücke productTraceability: No DC-Kollektorstrom: 337A Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2020) | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD200HFX65C1S | STARPOWER | Description: STARPOWER - GD200HFX65C1S - IGBT-Modul, Halbbrücke, 250 A, 1.45 V, 612 W, 150 °C, Module tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: Trench/Feldstop Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.45V Dauer-Kollektorstrom: 250A usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 1.45V Verlustleistung Pd: 612W euEccn: NLR Verlustleistung: 612W Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 650V Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V IGBT-Konfiguration: Halbbrücke productTraceability: No DC-Kollektorstrom: 250A Betriebstemperatur, max.: 150°C | auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD200HFX65C1S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Case: C1 34mm Max. off-state voltage: 650V Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT half-bridge Anzahl je Verpackung: 24 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD200HFX65C1S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Case: C1 34mm Max. off-state voltage: 650V Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT half-bridge | Produkt ist nicht verfügbar | |||||||||||||||||
| GD200HFX65C2S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Case: C2 62mm Max. off-state voltage: 650V Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT half-bridge Anzahl je Verpackung: 12 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD200HFX65C2S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Case: C2 62mm Max. off-state voltage: 650V Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT half-bridge | Produkt ist nicht verfügbar | |||||||||||||||||
| GD200HFX65C2S | STARPOWER | Description: STARPOWER - GD200HFX65C2S - IGBT-Modul, Halbbrücke, 247 A, 1.45 V, 612 W, 150 °C, Module tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: Trench-Transistor Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.45V Dauer-Kollektorstrom: 247A usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 1.45V Verlustleistung Pd: 612W euEccn: NLR Verlustleistung: 612W Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 650V Produktpalette: PW Series Kollektor-Emitter-Spannung, max.: 650V IGBT-Konfiguration: Halbbrücke productTraceability: No DC-Kollektorstrom: 247A Betriebstemperatur, max.: 150°C | auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD200HFX65C8S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Case: C8 48mm Max. off-state voltage: 650V Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT half-bridge | Produkt ist nicht verfügbar | |||||||||||||||||
| GD200HFX65C8S | STARPOWER | Description: STARPOWER - GD200HFX65C8S - IGBT-Modul, Halbbrücke, 247 A, 1.45 V, 612 W, 150 °C, Module tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: Trench/Feldstop Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.45V Dauer-Kollektorstrom: 247A usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 1.45V Verlustleistung Pd: 612W euEccn: NLR Verlustleistung: 612W Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 650V Produktpalette: - Kollektor-Emitter-Spannung, max.: 650V IGBT-Konfiguration: Halbbrücke productTraceability: No DC-Kollektorstrom: 247A Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2020) | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD200HFX65C8S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Case: C8 48mm Max. off-state voltage: 650V Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 200A Pulsed collector current: 400A Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT half-bridge Anzahl je Verpackung: 16 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD200HFY120C2S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Pulsed collector current: 400A Collector current: 200A Gate-emitter voltage: ±20V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C2 62mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge Anzahl je Verpackung: 12 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD200HFY120C2S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Pulsed collector current: 400A Collector current: 200A Gate-emitter voltage: ±20V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C2 62mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge | Produkt ist nicht verfügbar | |||||||||||||||||
| GD200HFY120C2S | STARPOWER | Description: STARPOWER - GD200HFY120C2S - IGBT-Modul, Halbbrücke, 309 A, 2 V, 1.006 kW, 150 °C, Module tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: Trench/Feldstop Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2V Dauer-Kollektorstrom: 309A usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 2V Verlustleistung Pd: 1.006kW euEccn: NLR Verlustleistung: 1.006kW Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 1.2kV Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV IGBT-Konfiguration: Halbbrücke productTraceability: No DC-Kollektorstrom: 309A Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2018) | auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD200HFY120C8S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Pulsed collector current: 400A Collector current: 200A Gate-emitter voltage: ±20V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C8 48mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge Anzahl je Verpackung: 16 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD200HFY120C8S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A Pulsed collector current: 400A Collector current: 200A Gate-emitter voltage: ±20V Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C8 48mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge | Produkt ist nicht verfügbar | |||||||||||||||||
| GD200HFY120C8S | STARPOWER | Description: STARPOWER - GD200HFY120C8S - IGBT-Modul, Halbbrücke, 309 A, 1.7 V, 1.006 kW, 150 °C, Module tariffCode: 85412900 Transistormontage: Platte IGBT-Technologie: Trench/Feldstop Sperrschichttemperatur Tj, max.: 150 hazardous: false Kollektor-Emitter-Sättigungsspannung: 1.7 Dauer-Kollektorstrom: 309 usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 1.7 Verlustleistung Pd: 1.006 euEccn: NLR Verlustleistung: 1.006 Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 1.2 Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2 IGBT-Konfiguration: Halbbrücke productTraceability: No DC-Kollektorstrom: 309 Betriebstemperatur, max.: 150 SVHC: No SVHC (25-Jun-2020) | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD200SGY120C2S | STARPOWER | Description: STARPOWER - GD200SGY120C2S - IGBT-Modul, Einfach, 309 A, 1.7 V, 1.006 kW, 150 °C, Module tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: Trench-Transistor Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.7V Dauer-Kollektorstrom: 309A usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 1.7V Verlustleistung Pd: 1.006kW euEccn: NLR Verlustleistung: 1.006kW Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 1.2kV Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV IGBT-Konfiguration: Einfach productTraceability: No DC-Kollektorstrom: 309A Betriebstemperatur, max.: 150°C SVHC: No SVHC (08-Jul-2021) | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD200TLQ120L3S | STARPOWER | Description: STARPOWER - GD200TLQ120L3S - IGBT-Modul, Drei-Ebenen-Wechselrichter, 200 A, 1.45 V, 666 W, 150 °C, Module tariffCode: 85412900 Transistormontage: Modul rohsCompliant: YES IGBT-Technologie: Trench/Feldstop hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.45V Dauer-Kollektorstrom: 200A usEccn: EAR99 IGBT-Anschluss: Lötanschluss euEccn: NLR Verlustleistung: 666W Bauform - Transistor: Module Produktpalette: TUK SGACK902S Keystone Coupler Kollektor-Emitter-Spannung, max.: 1.2kV IGBT-Konfiguration: Drei-Ebenen-Wechselrichter productTraceability: No Betriebstemperatur, max.: 150°C SVHC: No SVHC (10-Jun-2022) | auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD200TLQ120L3S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3 Topology: 3-level inverter TNPC; NTC thermistor Technology: Advanced Trench FS Fast IGBT Case: L3 Collector current: 100A Pulsed collector current: 400A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 16 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD200TLQ120L3S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; 3-level inverter TNPC; L3 Topology: 3-level inverter TNPC; NTC thermistor Technology: Advanced Trench FS Fast IGBT Case: L3 Collector current: 100A Pulsed collector current: 400A Gate-emitter voltage: ±20V Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: IGBT | Produkt ist nicht verfügbar | |||||||||||||||||
| GD2025 | INTEL | TQFP | auf Bestellung 735 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD2026 | Burndy | Cable Accessories Grounding Cast Copper Alloy | Produkt ist nicht verfügbar | |||||||||||||||||
| GD2030102MAW | KYOCERA AVX Components | Cap Ceramic Single 0.001uF 25V X7R 20% (0.508 X 0.508 X 0.165mm) Pad SMD 125°C Waffle | Produkt ist nicht verfügbar | |||||||||||||||||
| GD2048C | INTEL | TQFP | auf Bestellung 514 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD20MPS12A | GeneSiC Semiconductor | 1200V 20A TO-220-2 SiC Schottky MPS | Produkt ist nicht verfügbar | |||||||||||||||||
| GD20MPS12A | GeneSiC Semiconductor | Description: DIODE SIL CARB 1.2KV 42A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 737pF @ 1V, 1MHz Current - Average Rectified (Io): 42A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V | auf Bestellung 49 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD20MPS12A | GeneSiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 29A Max. load current: 67A Semiconductor structure: single diode Features of semiconductor devices: MPS Case: TO220-2 Kind of package: tube Max. forward impulse current: 128A Max. forward voltage: 1.9V | Produkt ist nicht verfügbar | |||||||||||||||||
| GD20MPS12A | GeneSiC SEMICONDUCTOR | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 29A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 29A Max. load current: 67A Semiconductor structure: single diode Features of semiconductor devices: MPS Case: TO220-2 Kind of package: tube Max. forward impulse current: 128A Max. forward voltage: 1.9V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD20MPS12A | GeneSiC Semiconductor | 1200V 20A TO-220-2 SiC Schottky MPS | Produkt ist nicht verfügbar | |||||||||||||||||
| GD20MPS12A | GeneSiC Semiconductor | Schottky Diodes & Rectifiers 1200V 20A TO-220-2 SiC Schottky MPS | auf Bestellung 3000 Stücke: Lieferzeit 151-165 Tag (e) |
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| GD20MPS12H | GeneSiC SEMICONDUCTOR | GD20MPS12H THT Schottky diodes | Produkt ist nicht verfügbar | |||||||||||||||||
| GD20MPS12H | GeneSiC Semiconductor | 1200V 20A SiC Schottky MPS Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| GD20MPS12H | GeneSiC Semiconductor | Schottky Diodes & Rectifiers 1200V 20A TO-247-2 SiC Schottky MPS Diode | auf Bestellung 3304 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD20MPS12H | GeneSiC Semiconductor | Description: DIODE SIL CARB 1.2KV 39A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 737pF @ 1V, 1MHz Current - Average Rectified (Io): 39A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V | auf Bestellung 3309 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD20PJX65F1S | STARPOWER | Description: STARPOWER - GD20PJX65F1S - IGBT-Modul, PIM-Dreiphasen-Eingangsgleichrichter, 35 A, 1.45 V, 102 W, 150 °C, Module tariffCode: 85412900 Transistormontage: Modul rohsCompliant: YES IGBT-Technologie: Trench/Feldstop hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.45V Dauer-Kollektorstrom: 35A usEccn: EAR99 IGBT-Anschluss: Lötanschluss euEccn: NLR Verlustleistung: 102W Bauform - Transistor: Module Produktpalette: PW Series Kollektor-Emitter-Spannung, max.: 650V IGBT-Konfiguration: PIM-Dreiphasen-Eingangsgleichrichter productTraceability: No Betriebstemperatur, max.: 150°C SVHC: No SVHC (10-Jun-2022) | auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD20PJX65F1S | STARPOWER SEMICONDUCTOR | GD20PJX65F1S IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||||
| GD20PJX65L2S | STARPOWER SEMICONDUCTOR | GD20PJX65L2S IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||||
| GD20PJX65L2S | STARPOWER | Description: STARPOWER - GD20PJX65L2S - IGBT-Modul, PIM-Dreiphasen-Eingangsgleichrichter, 40 A, 1.45 V, 129 W, 150 °C, Module tariffCode: 85412900 Transistormontage: Modul rohsCompliant: YES IGBT-Technologie: Trench/Feldstop hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.45V Dauer-Kollektorstrom: 40A usEccn: EAR99 IGBT-Anschluss: Lötanschluss euEccn: NLR Verlustleistung: 129W Bauform - Transistor: Module Produktpalette: PW Series Kollektor-Emitter-Spannung, max.: 650V IGBT-Konfiguration: PIM-Dreiphasen-Eingangsgleichrichter productTraceability: No Betriebstemperatur, max.: 150°C SVHC: No SVHC (10-Jun-2022) | auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD21150-AC | INTEL | 97+ BGA | auf Bestellung 2035 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD21150AC | INTEL | auf Bestellung 150 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| GD21150AC 830011 | Intel | PCI-TO-PCI BRIDGE | Produkt ist nicht verfügbar | |||||||||||||||||
| GD2115QAC | auf Bestellung 587 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| GD22-MT | Laird | Antennas Grid,Moto | Produkt ist nicht verfügbar | |||||||||||||||||
| GD22-MT | Laird Technologies IAS | Description: ANT GRID 14/19DBI 16" GALV STEEL | Produkt ist nicht verfügbar | |||||||||||||||||
| GD22-TR | Laird Technologies IAS | Description: ANT GRID 14/19DBI 16" TRANGO | Produkt ist nicht verfügbar | |||||||||||||||||
| GD22-TR | Laird | Antennas Grid,Trango | Produkt ist nicht verfügbar | |||||||||||||||||
| GD225HFX170C6S | STARPOWER SEMICONDUCTOR | GD225HFX170C6S IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||||
| GD225HFY120C6S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A Pulsed collector current: 450A Collector current: 225A Gate-emitter voltage: ±20V Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C6 62mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge | Produkt ist nicht verfügbar | |||||||||||||||||
| GD225HFY120C6S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 225A Pulsed collector current: 450A Collector current: 225A Gate-emitter voltage: ±20V Electrical mounting: Press-in PCB; screw Mechanical mounting: screw Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Type of module: IGBT Case: C6 62mm Technology: Advanced Trench FS IGBT Topology: IGBT half-bridge Anzahl je Verpackung: 10 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD225HFY120C6S | STARPOWER | Description: STARPOWER - GD225HFY120C6S - IGBT-Modul, Halbbrücke, 368 A, 2 V, 1.229 kW, 150 °C, Module tariffCode: 85412900 Transistormontage: Platte rohsCompliant: YES IGBT-Technologie: Trench/Feldstop Sperrschichttemperatur Tj, max.: 150°C hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2V Dauer-Kollektorstrom: 368A usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 2V Verlustleistung Pd: 1.229kW euEccn: NLR Verlustleistung: 1.229kW Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 1.2kV Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2kV IGBT-Konfiguration: Halbbrücke productTraceability: No DC-Kollektorstrom: 368A Betriebstemperatur, max.: 150°C SVHC: No SVHC (27-Jun-2018) | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD24-15 | Laird Technologies | Antenna Grid Dish 15dB Gain 2485MHz | auf Bestellung 33 Stücke: Lieferzeit 14-21 Tag (e) |
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| GD24-15P-NF | Laird Connectivity | Antennas Grid,Wire,240-30in,N F | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-15P-NF | Laird Technologies IAS | Description: ANT GRID 15DBI 2.4GHZ 30" N FEM | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-15P-NM | Laird Technologies IAS | Description: ANT GRID 15DBI 2.4GHZ 30" N MALE | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-15P-NM | Laird Connectivity | Antennas Grid,Wire,240-30in,N M | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-15P-RSMA | Laird Connectivity | Antennas Grid,Wire,240-30in,R SMAM | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-15P-RSMA | Laird Connectivity Inc. | Description: RF ANT 2.4GHZ GRID CAB BRKT 30" | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-15P-RTNC | Laird Connectivity | Antennas Grid,Wire,240-30in,R TNM | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-15P-RTNC | TE Connectivity Laird | Description: RF ANT 2.4GHZ GRID CAB BRKT 30" Features: Cable - 762mm Packaging: Bulk Mounting Type: Bracket Mount Frequency Range: 2.4GHz ~ 2.485GHz Applications: WiMax™, WLAN Gain: 15dBi Termination: RP-TNC Number of Bands: 1 VSWR: 1.5 Antenna Type: Parabolic Grid Height (Max): 16.000" (406.40mm) Frequency Group: UHF (2GHz ~ 3GHz) Frequency (Center/Band): 2.4GHz RF Family/Standard: WiFi Part Status: Active Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-19P-NF | Laird Technologies IAS | Description: ANT GRID 19DBI 2.4GHZ 30" N FEM | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-19P-NF | Laird Connectivity | Antennas Grid,Wire,240-30in,N F | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-19P-NM | Laird Connectivity | Antennas Grid,Wire,240-30in,N M | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-19P-NM | Laird Technologies IAS | Description: ANT GRID 19DBI 2.4GHZ 30" N MALE | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-19P-RSMA | Laird Connectivity Inc. | Description: RF ANT 2.4GHZ GRID CAB BRKT 30" | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-19P-RSMA | Laird Connectivity | Antennas Grid,Wire,240-30in,R SMAM | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-19P-RTNC | Laird Connectivity | Antennas Grid,Wire,240-30in,R TNM | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-19P-RTNC | TE Connectivity Laird | Description: RF ANT 2.4GHZ GRID CAB BRKT 30" Features: Cable - 762mm Packaging: Bulk Mounting Type: Bracket Mount Frequency Range: 2.4GHz ~ 2.485GHz Applications: WiMax™, WLAN Gain: 19dBi Termination: RP-TNC Number of Bands: 1 VSWR: 1.5 Antenna Type: Parabolic Grid Height (Max): 24.000" (609.60mm) Frequency Group: UHF (2GHz ~ 3GHz) Frequency (Center/Band): 2.4GHz RF Family/Standard: WiFi Part Status: Active Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-24 | Laird Technologies | ANTENNA UNIT | auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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| GD24-24P-NF-EZ | Laird | Antennas Grid,Wire,240-30in,N F | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-24P-NF-EZ | Laird Technologies IAS | Description: RF ANT 2.4GHZ GRID CAB BRKT 30" | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-24P-NM-EZ | Laird Technologies IAS | Description: RF ANT 2.4GHZ GRID CAB BRKT 30" | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-24P-NM-EZ | Laird | Antennas Grid,Wire,240-30in,N M | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-24P-RSMA | Laird Connectivity | Antennas Grid,Wire,240-30in,R SMAM | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-24P-RSMA | TE Connectivity Laird | Description: RF ANT 2.4GHZ GRID CAB BRKT 30" Features: Cable - 762mm Packaging: Bulk Mounting Type: Bracket Mount Frequency Range: 2.4GHz ~ 2.485GHz Applications: WiMax™, WLAN Gain: 24dBi Termination: RP-SMA Male Number of Bands: 1 VSWR: 1.5 Antenna Type: Parabolic Grid Height (Max): 36.000" (914.40mm) Frequency Group: UHF (2GHz ~ 3GHz) Frequency (Center/Band): 2.4GHz RF Family/Standard: WiFi Part Status: Active Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-24P-RTNC | TE Connectivity Laird | Description: RF ANT 2.4GHZ GRID CAB BRKT 30" Features: Cable - 762mm Packaging: Bulk Mounting Type: Bracket Mount Frequency Range: 2.4GHz ~ 2.485GHz Applications: WiMax™, WLAN Gain: 24dBi Termination: RP-TNC Number of Bands: 1 VSWR: 1.5 Antenna Type: Parabolic Grid Height (Max): 36.000" (914.40mm) Frequency Group: UHF (2GHz ~ 3GHz) Frequency (Center/Band): 2.4GHz RF Family/Standard: WiFi Part Status: Active Power - Max: 100 W | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-24P-RTNC | Laird | Antennas Grid,Wire,240-30in,R TNM | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-24P-RTNC-60 | Laird Connectivity | Antennas Grid,Wire,240-60in,R TNM | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24-24P-RTNC-60 | Laird Technologies IAS | Description: RF ANT 2.4GHZ GRID CAB BRKT 30" | Produkt ist nicht verfügbar | |||||||||||||||||
| GD2400SGX170C4S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Max. off-state voltage: 1.7kV Semiconductor structure: common gate; transistor/transistor Gate-emitter voltage: ±20V Collector current: 2.4kA Pulsed collector current: 4.8kA Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT x3 Case: C4 140mm | Produkt ist nicht verfügbar | |||||||||||||||||
| GD2400SGX170C4S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Max. off-state voltage: 1.7kV Semiconductor structure: common gate; transistor/transistor Gate-emitter voltage: ±20V Collector current: 2.4kA Pulsed collector current: 4.8kA Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: Trench FS IGBT Topology: IGBT x3 Case: C4 140mm Anzahl je Verpackung: 8 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD2400SGY120C3S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; Urmax: 1200V Max. off-state voltage: 1.2kV Semiconductor structure: common gate; transistor/transistor Gate-emitter voltage: ±20V Collector current: 2.4kA Pulsed collector current: 4.8kA Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: single transistor Case: C3 130mm | Produkt ist nicht verfügbar | |||||||||||||||||
| GD2400SGY120C3S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; Urmax: 1200V Max. off-state voltage: 1.2kV Semiconductor structure: common gate; transistor/transistor Gate-emitter voltage: ±20V Collector current: 2.4kA Pulsed collector current: 4.8kA Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: single transistor Case: C3 130mm Anzahl je Verpackung: 8 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD2400SGY120C3S | STARPOWER | Description: STARPOWER - GD2400SGY120C3S - IGBT-Modul, Einfach, 3.353 kA, 1.7 V, 10.2 kW, 150 °C, Module tariffCode: 85412900 Transistormontage: Platte IGBT-Technologie: Trench-Transistor Sperrschichttemperatur Tj, max.: 150 hazardous: false Kollektor-Emitter-Sättigungsspannung: 1.7 Dauer-Kollektorstrom: 3.353 usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 1.7 Verlustleistung Pd: 10.2 euEccn: NLR Verlustleistung: 10.2 Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 1.2 Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2 IGBT-Konfiguration: Einfach productTraceability: No DC-Kollektorstrom: 3.353 Betriebstemperatur, max.: 150 SVHC: To Be Advised | auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD2400SGY120C4S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Max. off-state voltage: 1.2kV Semiconductor structure: common gate; transistor/transistor Gate-emitter voltage: ±20V Collector current: 2.4kA Pulsed collector current: 4.8kA Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: IGBT x3 Case: C4 140mm Anzahl je Verpackung: 8 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD2400SGY120C4S | STARPOWER | Description: STARPOWER - GD2400SGY120C4S - IGBT-Modul, Einfach, 2.4 kA, 1.7 V, 150 °C, Module tariffCode: 85412900 Transistormontage: Platte IGBT-Technologie: Trench-Transistor Sperrschichttemperatur Tj, max.: 150 hazardous: false Kollektor-Emitter-Sättigungsspannung: 1.7 Dauer-Kollektorstrom: 2.4 usEccn: EAR99 IGBT-Anschluss: Stiftbolzen Kollektor-Emitter-Sättigungsspannung Vce(on): 1.7 Verlustleistung Pd: - euEccn: NLR Verlustleistung: - Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 1.2 Produktpalette: - Kollektor-Emitter-Spannung, max.: 1.2 IGBT-Konfiguration: Einfach productTraceability: No DC-Kollektorstrom: 2.4 Betriebstemperatur, max.: 150 SVHC: To Be Advised | auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD2400SGY120C4S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate; IGBT x3; screw Max. off-state voltage: 1.2kV Semiconductor structure: common gate; transistor/transistor Gate-emitter voltage: ±20V Collector current: 2.4kA Pulsed collector current: 4.8kA Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: Advanced Trench FS IGBT Topology: IGBT x3 Case: C4 140mm | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24BP-14P-NF | Laird Connectivity Inc. | Description: RF ANT 2.4GHZ GRID N FEM BRK 30" | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24BP-14P-NF | Laird Connectivity | Antennas Grid,Wire,240-30in,N F | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24BP-18P-NF | TE Connectivity Laird | Description: RF ANT 2.4GHZ GRID N FEM BRK 30" Packaging: Bulk Mounting Type: Bracket Mount Frequency Range: 2.4GHz ~ 2.485GHz Gain: 18dBi Termination: N Type Female Number of Bands: 1 VSWR: 1.5 Antenna Type: Parabolic Grid Frequency Group: UHF (2GHz ~ 3GHz) Frequency (Center/Band): 2.4GHz Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24BP-18P-NF | Laird Connectivity | Antennas Grid,Wire,240-30in,N F | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24BP-23P-NF | Laird Connectivity | Antennas Grid,Wire,240-30in,N F | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24BP-23P-NF | TE Connectivity Laird | Description: RF ANT 2.4GHZ GRID N FEM BRK 30" Packaging: Bulk Mounting Type: Bracket Mount Frequency Range: 2.4GHz ~ 2.485GHz Gain: 23dBi Termination: N Type Female Number of Bands: 1 VSWR: 1.5 Antenna Type: Parabolic Grid Frequency Group: UHF (2GHz ~ 3GHz) Frequency (Center/Band): 2.4GHz Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24BP-23P-NM | TE Connectivity Laird | Description: RF ANT 2.4GHZ GRID N 30" Packaging: Bulk Mounting Type: Bracket Mount Frequency Range: 2.4GHz ~ 2.485GHz Gain: 23dBi Termination: N Type Male Number of Bands: 1 VSWR: 1.5 Antenna Type: Parabolic Grid Frequency Group: UHF (2GHz ~ 3GHz) Frequency (Center/Band): 2.4GHz Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24BP-23P-NM | Laird Connectivity | Antennas Grid,Wire,240-30in,N M | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24V_4A2AV1-001 | Vicor | Modular Power Supplies GD24V4.2AV124V4.2AV1 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD24V_4A2AV1-001 | Vicor Corporation | Description: GD24V/4.2AV1-24V/4.2AV1 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25-15P-NF | Laird Technologies IAS | Description: ANT GRID 15DBI 2.5-2.7G 30" NFEM | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25-15P-NF | Laird | Antennas Grid,Wire,240-30in,N F | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25-15P-NM | Laird Technologies IAS | Description: ANT GRID 15DBI 2.5-2.7G 30"NMALE | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25-15P-NM | Laird | Antennas Grid,Wire,240-30in,N M | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25-19P-NF | Laird | Antennas Grid,Wire,240-30in,N F | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25-19P-NF | Laird Technologies IAS | Description: ANT GRID 19DBI 2.5-2.7G 30" NFEM | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25-19P-NM | Laird Technologies IAS | Description: ANT GRID 19DBI 2.5-2.7G 30"NMALE | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25-19P-NM | Laird | Antennas Grid,Wire,240-30in,N M | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25-24P-NF | Laird | Antennas Grid,Wire,240-30in,N F | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25-24P-NF | Laird Technologies IAS | Description: ANT GRID 24DBI 2.5-2.7G 30" NFEM | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25-24P-NM | Laird Technologies IAS | Description: ANT GRID 24DBI 2.5-2.7G 30"NMALE | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25-24P-NM | Laird | Antennas Grid,Wire,240-30in,N M | Produkt ist nicht verfügbar | |||||||||||||||||
| GD2530142ZA6N | KYOCERA AVX | Description: CAP CER Packaging: Tray Tolerance: -20%, +80% Voltage - Rated: 25V Package / Case: Nonstandard SMD Temperature Coefficient: X7R Size / Dimension: 0.025" L x 0.025" W (0.64mm x 0.64mm) Mounting Type: Surface Mount, SLCC Operating Temperature: -55°C ~ 125°C Applications: RF, Microwave, High Frequency Thickness (Max): 0.008" (0.20mm) Part Status: Active Capacitance: 1400 pF | auf Bestellung 1580 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25B127CSIG | GigaDevice | NOR Flash 128Mbit NOR Flash /Quad Enable /3.3V /SOP8 208mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B127CSIGR | GigaDevice | NOR Flash 128Mbit NOR Flash /Quad Enable /3.3V /SOP8 208mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B127CWIGR | GigaDevice | NOR Flash 128Mbit NOR Flash /Quad Enable /3.3V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B127DSIGR | GigaDevice | NOR Flash 128Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B128ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 128MBIT, 3.3V, SOP8 208MIL, INDU Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | auf Bestellung 1685 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25B128ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 128MBIT, 3.3V, SOP8 208MIL, INDU Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B128ESIGR | GigaDevice | NOR Flash | auf Bestellung 1980 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25B128ESIGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B128ESIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tray Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B128EWIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B128EWIGR | GigaDevice Semiconductor (HK) Limited | Description: 128MBIT, 3.3V, WSON8 6*5MM, INDU Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B128EWIGR | GigaDevice Semiconductor (HK) Limited | Description: 128MBIT, 3.3V, WSON8 6*5MM, INDU Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | auf Bestellung 2907 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25B128EWIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B128EWIGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B128EYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B128EYIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B128EYIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B128EYIGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B16EEIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B16ES2GR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B16ES2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Memory Format: FLASH Supplier Device Package: 8-SOP Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B16ESIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B16ETIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B256DFIGR | GigaDevice | NOR Flash 256Mbit NOR Flash /3.3V /SOP16 300mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B256DYIGR | GigaDevice | NOR Flash 256Mbit NOR Flash /3.3V /WSON8 8*6mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B256EBIRY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B256EFIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B256EFIGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B256EFIRR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B256EFIRY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B256EWIGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B256EYIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B256EYIGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B32CSIG | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B32CSIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B32CWIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B32ES2GR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B32ES2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Memory Format: FLASH Supplier Device Package: 8-SOP Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B32ESIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B32ETIGR | GigaDevice Semiconductor (HK) Limited | Description: 32MBIT, 3.3V, SOP8 150MIL, INDUS Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25B32ETIGR | GigaDevice Semiconductor (HK) Limited | Description: 32MBIT, 3.3V, SOP8 150MIL, INDUS Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25B32EWIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B512MEFIRR | GigaDevice | NOR Flash | auf Bestellung 663 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25B512MEYIGR | GigaDevice | NOR Flash | auf Bestellung 2782 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25B64CSIG | GigaDevice | NOR Flash 64Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B64CSIGR | GigaDevice | NOR Flash 64Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B64CWIGR | GigaDevice | NOR Flash 64Mbit NOR Flash /3.3V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B64CYIGR | GigaDevice | NOR Flash 64Mbit NOR Flash /3.3V /WSON8 8*6mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B64ENIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B64ENIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B64ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 64MBIT, 3.3V, SOP8 208MIL, INDUS Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B64ESIGR | GigaDevice | NOR Flash | auf Bestellung 2914 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25B64ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 64MBIT, 3.3V, SOP8 208MIL, INDUS Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 | auf Bestellung 1059 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25B64EWIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B64EWIGR | GigaDevice Semiconductor (HK) Limited | Description: 64MBIT, 3.3V, WSON8 6*5MM, INDUS Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 | auf Bestellung 2954 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25B64EWIGR | GigaDevice Semiconductor (HK) Limited | Description: 64MBIT, 3.3V, WSON8 6*5MM, INDUS Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25B64EWIGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D05BOIGR | GigaDevice | NOR Flash 512Kbit NOR Flash /3.3V /TSSOP8 173mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D05BTIG | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512kb; Dual I/O,SPI; 80MHz; 2.7÷3.6V; SOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory capacity: 512kb Interface: Dual I/O; SPI Operating frequency: 80MHz Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V | auf Bestellung 122 Stücke: Lieferzeit 14-21 Tag (e) |
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| GD25D05BTIG | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 512kb; Dual I/O,SPI; 80MHz; 2.7÷3.6V; SOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory capacity: 512kb Interface: Dual I/O; SPI Operating frequency: 80MHz Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Anzahl je Verpackung: 1 Stücke | auf Bestellung 122 Stücke: Lieferzeit 7-14 Tag (e) |
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| GD25D05CEIGR | GigaDevice | NOR Flash 512Kbit NOR Flash /3.3V /USON8 3*2*0.45mm /Industrial(-40? to +85?) /T&R | auf Bestellung 2897 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25D05CKIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 512KBIT SPI/DUAL 8USON | auf Bestellung 2385 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD25D05CKIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 512KBIT SPI/DUAL 8USON | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D05CTIGR | GigaDevice | NOR Flash 512Kbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /T&R | auf Bestellung 3678 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25D05CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 512KBIT SPI/DUAL 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Memory Organization: 64K x 8 DigiKey Programmable: Not Verified | auf Bestellung 16648 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25D05CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 512KBIT SPI/DUAL 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 512Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Memory Organization: 64K x 8 DigiKey Programmable: Not Verified | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25D10BOIGR | GIGADEVICE | GD25D10BOIGR Serial FLASH memories - integrated circ. | auf Bestellung 192 Stücke: Lieferzeit 7-14 Tag (e) |
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| GD25D10BTIG | GigaDevice | NOR Flash 1Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D10BTIGR | GigaDevice | NOR Flash 1Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D10BTIGRR | GigaDevice | NOR Flash Use P/N GD25D10BTIGR | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D10CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1MBIT SPI/DUAL 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Memory Organization: 128K x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D10CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1MBIT SPI/DUAL 8USON Packaging: Cut Tape (CT) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Memory Organization: 128K x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D10CEIGR | GigaDevice | NOR Flash 1Mbit NOR Flash /3.3V /USON8 3*2*0.45mm /Industrial(-40? to +85?) /T&R | auf Bestellung 8427 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25D10CKIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1MBIT SPI/DUAL 8USON | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD25D10CKIGR | GigaDevice | NOR Flash 1Mbit NOR Flash /3.3V /USON8 1.5*1.5*0.45mm /Industrial(-40? to +85?) /T&R | auf Bestellung 11839 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25D10CKIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1MBIT SPI/DUAL 8USON | auf Bestellung 3680 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD25D10CTEGR | GigaDevice | NOR Flash 1Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +125?) /T&R | auf Bestellung 2645 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25D10CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1MBIT SPI/DUAL I/O 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Memory Organization: 128K x 8 DigiKey Programmable: Not Verified | auf Bestellung 9889 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25D10CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 1MBIT SPI/DUAL I/O 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Memory Organization: 128K x 8 DigiKey Programmable: Not Verified | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25D10CTIGR | GigaDevice | NOR Flash 1Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /T&R | auf Bestellung 8324 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25D10CTIGR | GIGADEVICE | GD25D10CTIGR Serial FLASH memories - integrated circ. | auf Bestellung 114 Stücke: Lieferzeit 7-14 Tag (e) |
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| GD25D20CEIGR | GigaDevice | NOR Flash 2Mbit NOR Flash /3.3V /USON8 3*2*0.45mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D20CTIG | GigaDevice | NOR Flash 2Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D40CEIGR | GigaDevice | NOR Flash 4Mbit NOR Flash /3.3V /USON8 3*2*0.45mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D40CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/DUAL 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Access Time: 6 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D40CKIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/DUAL 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-USON (1.5x1.5) Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Access Time: 6 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D40CKIGR | GigaDevice | NOR Flash 4Mbit NOR Flash /3.3V /USON8 1.5*1.5*0.45mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D40CTEGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D40CTEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/DUAL 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 80µs, 4ms Memory Interface: SPI - Dual I/O Access Time: 6 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D40CTIG | GigaDevice | NOR Flash 4Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D40CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/DUAL 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Access Time: 6 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D40CTIGR | GigaDevice | NOR Flash 4Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D40EEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/DUAL 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Access Time: 6 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D40EEIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D40EKIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/DUAL 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-USON (1.5x1.5) Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Access Time: 6 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D40EKIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D40ETIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/DUAL 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Access Time: 6 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D40ETIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25D80CKIGR | GigaDevice | NOR Flash 8Mbit NOR Flash /3.3V /USON8 1.5*1.5*0.45mm /Industrial(-40? to +85?) /T&R | auf Bestellung 138 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||
| GD25D80CKIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/DUAL 8USON Packaging: Cut Tape (CT) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-USON (1.5x1.5) Part Status: Active Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified | auf Bestellung 21621 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25D80CKIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/DUAL 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 8-USON (1.5x1.5) Part Status: Active Write Cycle Time - Word, Page: 50µs, 4ms Memory Interface: SPI - Dual I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified | auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25D80CSIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F128ESIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F128ESIGR | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F128ESIGY | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tray | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F128ESIGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F128FB2RY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 128MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F128FB2RY | GigaDevice | GigaDevice | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F128FS2GR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F128FS2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F128FSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F128FSIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F128FW2GR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F128FW2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F128FWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F128FWIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F128FYAGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F128FYAGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F256FB2RY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 256MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F256FBIRY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F256FBIRY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 256MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F256FFIRR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F256FW2GY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F256FWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F256FY2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F256FYAGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F256FYAGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F256FYAGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F256FYAGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F256FYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F512MFB2RY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F512MFBIRY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F512MFFIRR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F512MFYIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F64FQ2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Memory Interface: SPI - Quad I/O, DTR Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F64FQ2GR | GigaDevice | GigaDevice | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F64FS2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Memory Interface: SPI - Quad I/O, DTR Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F64FS2GR | GigaDevice | GigaDevice | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F64FSAGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Memory Interface: SPI - Quad I/O, DTR Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F64FSAGR | GigaDevice | GigaDevice | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F64FSIGR | GigaDevice | GigaDevice | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F64FSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Memory Interface: SPI - Quad I/O, DTR Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F64FW2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Memory Interface: SPI - Quad I/O, DTR Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F64FW2GR | GigaDevice | GigaDevice | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F64FWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Memory Interface: SPI - Quad I/O, DTR Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25F64FWIGR | GigaDevice | GigaDevice | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB128DSIGR | GigaDevice | NOR Flash 128Mbit NOR Flash /1.8V /SOP8 208mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB128EFIRR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB128ESIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB128EWIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB128EYIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB16EEIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB16ESIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB16ETIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB16EWIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB256E3IRR | GigaDevice | NOR Flash | auf Bestellung 904 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25LB256E3IRR | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 256MBIT SPI/QUAD 48WLCSP Packaging: Tape & Reel (TR) Package / Case: 48-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 48-WLCSP Write Cycle Time - Word, Page: 70µs, 1.2ms Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 6 ns Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB256EBARY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 256MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Write Cycle Time - Word, Page: 140µs, 3ms Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 6 ns Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB256EBARY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB256EBIRY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB256EBIRY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 256MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Write Cycle Time - Word, Page: 70µs, 1.2ms Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 6 ns Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB256EBJRY | GigaDevice | GigaDevice | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB256EFIRR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Write Cycle Time - Word, Page: 70µs, 1.2ms Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 6 ns Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB256EFIRR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB256ELIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 256MBIT SPI/QUAD 32WLCSP Packaging: Tape & Reel (TR) Package / Case: 32-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 32-WLCSP Write Cycle Time - Word, Page: 70µs, 1.2ms Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 6 ns Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB256ELIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB256EWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 70µs, 1.2ms Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 6 ns Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB256EWIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB256EY2GR | GigaDevice | GigaDevice | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB256EY2GY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 140µs, 2ms Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 5 ns Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB256EY2GY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB256EYEGR | GigaDevice | GigaDevice | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB256EYIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB256EYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 70µs, 1.2ms Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 6 ns Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB256EYIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 70µs, 1.2ms Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 6 ns Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB256EYIGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB256EYJGR | GigaDevice | GigaDevice | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB256FFIRR | GigaDevice | GigaDevice | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB256FWIGR | GigaDevice | GigaDevice | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB256FYIGR | GigaDevice | GigaDevice | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB32ES2GR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB32ES2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB64ENIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB64ENIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LB64ESIGR | GigaDevice | NOR Flash | auf Bestellung 2000 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25LB64EWIGR | GigaDevice | NOR Flash | auf Bestellung 2870 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25LD20CEIGR | GigaDevice | NOR Flash 2Mbit NOR Flash /1.8v /USON8 3*2*0.45mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LD40CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 4MBIT SPI/DUAL I/O 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 97µs, 6ms Memory Interface: SPI - Dual I/O Memory Organization: 512K x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LD40CEIGR | GigaDevice | NOR Flash 4Mbit NOR Flash /1.8v /USON8 3*2*0.45mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LD40CKIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LD40CKIGR | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-USON (1.5x1.5) Write Cycle Time - Word, Page: 97µs, 6ms Memory Interface: SPI - Dual I/O Access Time: 12 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LD40COIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/DUAL 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-TSSOP Write Cycle Time - Word, Page: 97µs, 6ms Memory Interface: SPI - Dual I/O Memory Organization: 512K x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LD40COIGR | GigaDevice | NOR Flash 4Mbit NOR Flash /1.8v /TSSOP8 173mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LD40CTIG | GigaDevice | NOR Flash 4Mbit NOR Flash /1.8v /SOP8 150mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LD40CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/DUAL I/O 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 97µs, 6ms Memory Interface: SPI - Dual I/O Memory Organization: 512K x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LD40CTIGR | GigaDevice | NOR Flash 4Mbit NOR Flash /1.8v /SOP8 150mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LD40EEIGR | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 100µs, 6ms Memory Interface: SPI - Dual I/O Access Time: 12 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LD40EKIGR | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-USON (1.5x1.5) Write Cycle Time - Word, Page: 100µs, 6ms Memory Interface: SPI - Dual I/O Access Time: 12 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LD40ETIGR | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 100µs, 6ms Memory Interface: SPI - Dual I/O Access Time: 12 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LD80CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 8MBIT SPI/DUAL I/O 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 60µs, 6ms Memory Interface: SPI - Dual I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LD80CKIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LD80CKIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/DUAL 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-USON (1.5x1.5) Write Cycle Time - Word, Page: 97µs, 6ms Memory Interface: SPI - Dual I/O Access Time: 12 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LD80CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/DUAL I/O 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 6ms Memory Interface: SPI - Dual I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LD80CTIG | GigaDevice | NOR Flash 8Mbit NOR Flash /1.8v /SOP8 150mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LD80CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/DUAL I/O 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 6ms Memory Interface: SPI - Dual I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LD80ETIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/DUAL 8SOP Packaging: Tray Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 50 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 100µs, 6ms Memory Interface: SPI - Dual I/O Access Time: 12 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LD80ETIGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE128ELIGR | GigaDevice | NOR Flash | auf Bestellung 2067 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25LE128ESIG | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE128ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 128MBIT, 1.8V, SOP8 208MIL, INDU Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE128ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 128MBIT, 1.8V, SOP8 208MIL, INDU Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 16M x 8 | auf Bestellung 1990 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LE128EWIGR | GigaDevice | NOR Flash | auf Bestellung 2459 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25LE16C8IGR | GigaDevice | NOR Flash 16Mbit NOR Flash /1.8V /LGA8 3*2mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE16ESIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE255EWIGR | GigaDevice | NOR Flash | auf Bestellung 2686 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25LE32DLIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /1.8V /WLCSP /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE32E3IGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 10WLCSP Packaging: Tape & Reel (TR) Package / Case: 10-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 10-WLCSP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE32E3IGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE32EEEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 100µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE32EEIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE32EEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE32ELIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 10WLCSP Packaging: Tape & Reel (TR) Package / Case: 10-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 10-WLCSP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE32ELIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE32ENIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE32ENIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE32EQIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE32EQIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE32ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 32MBIT, 1.8V, SOP8 208MIL, INDUS Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE32ESIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE32ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 32MBIT, 1.8V, SOP8 208MIL, INDUS Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | auf Bestellung 1723 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LE64CLIGR | GigaDevice | NOR Flash 64Mbit NOR Flash /1.8V /WLCSP /Industrial(-40? to +85?) /T&R | auf Bestellung 1781 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||||
| GD25LE64ELIGR | GigaDevice | NOR Flash | auf Bestellung 3012 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25LE64ENIG | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE64ENIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE64ENIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE64ESIG | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE64ESIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE64ESIGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE80ESIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LE80ETIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LF128ESIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LF32ESIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LH16ENIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LH16ENIGR | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LH32ENIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LH32ENIGR | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ05CEIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD25LQ05CEIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD25LQ05CEIGR | GigaDevice | NOR Flash 512Kbit NOR Flash /1.8v /USON8 3*2*0.45mm /Industrial(-40? to +85?) /T&R | auf Bestellung 1505 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25LQ064BWIG | GD | QFN | auf Bestellung 20 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD25LQ10CEIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ10CEIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ10CTIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ10CTIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128CVIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128Mb; Quad I/O,SPI; 120MHz; 1.65÷2V; VSOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory capacity: 128Mb Interface: Quad I/O; SPI Operating frequency: 120MHz Case: VSOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128CVIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128Mb; Quad I/O,SPI; 120MHz; 1.65÷2V; VSOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory capacity: 128Mb Interface: Quad I/O; SPI Operating frequency: 120MHz Case: VSOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128CWIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128Mb; Quad I/O,SPI; 120MHz; 1.65÷2V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory capacity: 128Mb Interface: Quad I/O; SPI Operating frequency: 120MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128CWIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128Mb; Quad I/O,SPI; 120MHz; 1.65÷2V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory capacity: 128Mb Interface: Quad I/O; SPI Operating frequency: 120MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128DBAGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128DS2GR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128DSAGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128DSAGR | GigaDevice Semiconductor (HK) Limited | Description: LINEAR IC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128DSIG | GigaDevice | NOR Flash 128Mbit NOR Flash /1.8V /SOP8 208mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128DSIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128DSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Verified | auf Bestellung 11223 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ128DSIGR | GigaDevice | NOR Flash 128Mbit NOR Flash /1.8V /SOP8 208mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128DSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Verified | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ128DVIGR | GigaDevice | NOR Flash 128Mbit NOR Flash /1.8V /VSOP8 208mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128DVIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8VSOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-VSOP Part Status: Active Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128DW2GR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128DWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Not For New Designs Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | auf Bestellung 3289 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ128DWIGR | GigaDevice | NOR Flash 128Mbit NOR Flash /1.8V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128DWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Not For New Designs Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128DY2GY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128DYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Active Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | auf Bestellung 3057 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ128DYIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128DYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Active Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128EBIRY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128EBIRY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 128MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128EFIRR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128EQEGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128EQIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128EQIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128ESIG | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ128ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | auf Bestellung 5699 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ128ESIGR | GigaDevice | NOR Flash | auf Bestellung 3794 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25LQ128ESJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128ESJGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128EWIGR | GigaDevice | NOR Flash | auf Bestellung 2785 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25LQ128EWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | auf Bestellung 5807 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ128EWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128EWJGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128EYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128EYIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128EYIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128EYIGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128EYJGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ128YIG | QFN?? | auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| GD25LQ128YTG | GD | QFN? | auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD25LQ16C8IGR | GigaDevice | NOR Flash 16Mbit NOR Flash /1.8V /LGA8 3*2 /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ16C8IGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ16C8JGR | GigaDevice | NOR Flash 16Mbit NOR Flash /1.8V /LGA8 3*2 /Industrial(-40? to +105?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ16CNIGR | GigaDevice | NOR Flash 16Mbit NOR Flash /1.8V /USON8 3*4mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ16CNIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Cut Tape (CT) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | auf Bestellung 4890 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ16CNIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ16CSIG | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ16CSIG | GigaDevice | NOR Flash 16Mbit NOR Flash /1.8V /SOP8 208mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ16CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Verified | auf Bestellung 18903 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ16CSIGR | GigaDevice | NOR Flash 16Mbit NOR Flash /1.8V /SOP8 208mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ16CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Verified | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ16CTIG | GigaDevice | NOR Flash 16Mbit NOR Flash /1.8V /SOP8 150mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ16CTIG | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ16CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP | auf Bestellung 13674 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ16CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ16CTIGR | GigaDevice | NOR Flash 16Mbit NOR Flash /1.8V /SOP8 150mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ16CWIGR | GigaDevice | NOR Flash 16Mbit NOR Flash /1.8V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ16CWIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ16EEIGR | GigaDevice | NOR Flash | auf Bestellung 4474 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25LQ16ENIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ16ENIGR | GigaDevice | NOR Flash | auf Bestellung 395 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25LQ16ESIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ16ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 16MBIT, 1.8V, SOP8 208MIL, INDUS Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 2M x 8 | auf Bestellung 1967 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ16ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 16MBIT, 1.8V, SOP8 208MIL, INDUS Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ16ETIGR | GigaDevice Semiconductor (HK) Limited | Description: 16MBIT, 1.8V, SOP8 150MIL, INDUS Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 2M x 8 | auf Bestellung 2601 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ16ETIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ16ETIGR | GigaDevice Semiconductor (HK) Limited | Description: 16MBIT, 1.8V, SOP8 150MIL, INDUS Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ16ETJGR | GigaDevice | NOR Flash 16Mbiit Dual and Quad Serial Flash - Extended Temp | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ16EWIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ16EWIGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ16LIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ16SIG | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16Mb; Quad I/O,SPI; 120MHz; 1.65÷2V; SOP8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory capacity: 16Mb Interface: Quad I/O; SPI Operating frequency: 120MHz Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V | auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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| GD25LQ16SIG | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16Mb; Quad I/O,SPI; 120MHz; 1.65÷2V; SOP8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory capacity: 16Mb Interface: Quad I/O; SPI Operating frequency: 120MHz Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V Anzahl je Verpackung: 1 Stücke | auf Bestellung 47 Stücke: Lieferzeit 7-14 Tag (e) |
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| GD25LQ16TIG | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16Mb; Quad I/O,SPI; 120MHz; 1.65÷2V; SOP8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory capacity: 16Mb Interface: Quad I/O; SPI Operating frequency: 120MHz Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V | auf Bestellung 342 Stücke: Lieferzeit 14-21 Tag (e) |
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| GD25LQ16TIG | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16Mb; Quad I/O,SPI; 120MHz; 1.65÷2V; SOP8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory capacity: 16Mb Interface: Quad I/O; SPI Operating frequency: 120MHz Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V Anzahl je Verpackung: 1 Stücke | auf Bestellung 342 Stücke: Lieferzeit 7-14 Tag (e) |
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| GD25LQ20CEIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | auf Bestellung 5822 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD25LQ20CEIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD25LQ20CTIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | auf Bestellung 5920 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD25LQ20CTIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD25LQ255EBIRY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ255ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 256MBIT, 1.8V, SOP8 208MIL, INDU Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ255ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 256MBIT, 1.8V, SOP8 208MIL, INDU Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ255EWIGR | GigaDevice Semiconductor (HK) Limited | Description: 256MB, 1.8V, SPI NOR, WSON8 Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ255EWIGR | GigaDevice Semiconductor (HK) Limited | Description: 256MB, 1.8V, SPI NOR, WSON8 Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 32M x 8 | auf Bestellung 2503 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ255EYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O, QPI Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ255EYIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ255EYIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O, QPI Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ255EYIGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ256CWIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; Quad I/O,SPI; 120MHz; 1.65÷2V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: Quad I/O; SPI Operating frequency: 120MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ256CWIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; Quad I/O,SPI; 120MHz; 1.65÷2V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 256Mb FLASH Interface: Quad I/O; SPI Operating frequency: 120MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ256DWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified | auf Bestellung 7841 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ256DWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ256DWIGR | GigaDevice | NOR Flash 256Mbit NOR Flash /1.8V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ256DWIGY | GigaDevice | NOR Flash 256Mbit NOR Flash /1.8V /WSON8 6*5mm /Industrial(-40? to +85?) /Tray | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ256DYIGR | GigaDevice | NOR Flash 256Mbit NOR Flash /1.8V /WSON8 8*6mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32CSIG | GigaDevice | NOR Flash 32Mb SPI NOR 1.65V-1.95V SOP8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32CSIGR | GigaDevice | NOR Flash NOR FLASH 32M 1.8V, SOP8 208mi | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32CSIGRR | GigaDevice | NOR Flash NOR FLASH 32M 1.8V, SOP8 208mi | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32CSIGRY | GigaDevice | NOR Flash NOR FLASH 32M 1.8V, SOP8 208mi | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32DLIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 10WLCSP | auf Bestellung 5721 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ32DLIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 10WLCSP | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ32DLIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32DNIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32DNIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /1.8V /USON8 3*4mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32DNIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Cut Tape (CT) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | auf Bestellung 4095 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ32DQIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /1.8V /USON8 4*4mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32DSIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32DSIG | GigaDevice | NOR Flash 32Mbit NOR Flash /1.8V /SOP8 208mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32DSIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /1.8V /SOP8 208mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32DSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Verified | auf Bestellung 44938 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ32DSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Verified | auf Bestellung 42000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ32DWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8WSON | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32DWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8WSON | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32DWIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /1.8V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32EEIG | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32EEIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32ENIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32ENIGR | GigaDevice | NOR Flash | auf Bestellung 3052 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25LQ32ENIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Cut Tape (CT) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32EQIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32ES2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32ES2GR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32ESIG | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ32ESIGR | GigaDevice | NOR Flash | auf Bestellung 3105 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25LQ32ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 7 ns Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | auf Bestellung 13759 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ32ESIGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32ETIGR | GigaDevice Semiconductor (HK) Limited | Description: 32MBIT, 1.8V, SOP8 150MIL, INDUS Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | auf Bestellung 2890 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ32ETIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32ETIGR | GigaDevice Semiconductor (HK) Limited | Description: 32MBIT, 1.8V, SOP8 150MIL, INDUS Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32ETIGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ32EWIGR | GigaDevice Semiconductor (HK) Limited | Description: 32MBIT, 1.8V, WSON8 6*5MM, INDUS Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | auf Bestellung 5960 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ32EWIGR | GigaDevice | NOR Flash | auf Bestellung 2997 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25LQ32EWIGR | GigaDevice Semiconductor (HK) Limited | Description: 32MBIT, 1.8V, WSON8 6*5MM, INDUS Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 4M x 8 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ32EWIGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ40CEIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | auf Bestellung 5598 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD25LQ40CEIGR | GigaDevice | NOR Flash 4Mbit NOR Flash /1.8v /USON8 3*2*0.45mm /Industrial(-40? to +85?) /T&R | auf Bestellung 1708 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25LQ40CEIGR | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD25LQ40CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD I/O 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 512K x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ40CTIGR | GigaDevice | NOR Flash 4Mbit NOR Flash /1.8v /SOP8 150mil /Industrial(-40? to +85?) /T&R | auf Bestellung 2833 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25LQ40CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD I/O 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 512K x 8 DigiKey Programmable: Not Verified | auf Bestellung 5779 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ40ESIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64BWIG | GD | QFN | auf Bestellung 10 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD25LQ64CQIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Part Status: Active Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64CQIGR | GigaDevice | NOR Flash 64Mbit NOR Flash /1.8V /USON8 4*4mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64CSIG | GigaDevice | NOR Flash 64Mbit NOR Flash /1.8V /SOP8 208mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64CSIG Produktcode: 127223 | IC > IC Speicher | Produkt ist nicht verfügbar | ||||||||||||||||||
| GD25LQ64CSIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Verified | auf Bestellung 421 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ64CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64CSIGR | GigaDevice | NOR Flash 64Mbit NOR Flash /1.8V /SOP8 208mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64CSIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; Quad I/O,SPI; 133MHz; 1.65÷2V; SOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: Quad I/O; SPI Operating frequency: 133MHz Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V Anzahl je Verpackung: 9500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64CSIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; Quad I/O,SPI; 133MHz; 1.65÷2V; SOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: Quad I/O; SPI Operating frequency: 133MHz Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64CVIGR | GigaDevice | NOR Flash 64Mbit NOR Flash /1.8V /VSOP8 208mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64CVIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; Quad I/O,SPI; 133MHz; 1.65÷2V; VSOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: Quad I/O; SPI Operating frequency: 133MHz Case: VSOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64CVIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; Quad I/O,SPI; 133MHz; 1.65÷2V; VSOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: Quad I/O; SPI Operating frequency: 133MHz Case: VSOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64CVIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8VSOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-VSOP Part Status: Active Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64CWIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; Quad I/O,SPI; 133MHz; 1.65÷2V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: Quad I/O; SPI Operating frequency: 133MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64CWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Not For New Designs Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ64CWIGR | GigaDevice | NOR Flash 64Mbit NOR Flash /1.8V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64CWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Not For New Designs Write Cycle Time - Word, Page: 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | auf Bestellung 6140 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ64CWIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; Quad I/O,SPI; 133MHz; 1.65÷2V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: Quad I/O; SPI Operating frequency: 133MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64ENAGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64ENAGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Write Cycle Time - Word, Page: 100µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64ENIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64ENIGR | GigaDevice | NOR Flash | auf Bestellung 1626 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25LQ64ENJGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64ENJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64EQAGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64EQAGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Write Cycle Time - Word, Page: 100µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64EQEGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64EQEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Write Cycle Time - Word, Page: 100µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64EQIGR | GigaDevice | NOR Flash | auf Bestellung 2964 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25LQ64EQIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64ES2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64ES2GR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64ESAGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64ESAGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 100µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64ESIG | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ64ESIGR | GigaDevice | NOR Flash | auf Bestellung 1410 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25LQ64ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | auf Bestellung 8657 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ64ET2GY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64ET2GY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tray Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64ETIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64ETIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64EW2GR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64EW2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64EWAGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64EWAGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 100µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64EWIGR | GigaDevice Semiconductor (HK) Limited | Description: 64MBIT, 1.8V, WSON8 6*5MM, INDUS Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 8M x 8 | auf Bestellung 2918 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25LQ64EWIGR | GigaDevice | NOR Flash | auf Bestellung 2993 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25LQ64EWIGR | GigaDevice Semiconductor (HK) Limited | Description: 64MBIT, 1.8V, WSON8 6*5MM, INDUS Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64EY2GR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ64EY2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80BSIGR | GigaDevice | NOR Flash NOR FLASH 8M 1.8v, SOP8 208mil | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD 8USON Packaging: Cut Tape (CT) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80CEIGR | GigaDevice | NOR Flash 8Mbit NOR Flash /1.8v /USON8 3*2mm 0.55mm /Industrial(-40? to +85?) /T&R | auf Bestellung 415 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25LQ80CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80CN2GR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80CN2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR (SLC) Clock Frequency: 90 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Write Cycle Time - Word, Page: 80µs, 3ms Memory Interface: SPI - Quad I/O Access Time: 6 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80CSIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD I/O 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80CSIG | GigaDevice | NOR Flash 8Mbit NOR Flash /1.8v /SOP8 208mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80CSIGR | GigaDevice | NOR Flash 8Mbit NOR Flash /1.8v /SOP8 208mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD I/O 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 1M x 8 DigiKey Programmable: Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD I/O 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 1M x 8 DigiKey Programmable: Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80CTIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD I/O 8SOP Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80CTIG | GigaDevice | NOR Flash 8Mbit NOR Flash /1.8v /SOP8 150mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD I/O 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80CTIGR | GigaDevice | NOR Flash 8Mbit NOR Flash /1.8v /SOP8 150mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD I/O 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.1V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 1M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80EEAGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80EEAGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 100µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80EEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80EEIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80ESIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80ETEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 100µs, 4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80ETEGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80ETIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 8MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 2.4ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 1M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LQ80ETIGR | GigaDevice | NOR Flash | auf Bestellung 1525 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25LR512MEFIRY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LR512MEYIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LT256EBIRY | GigaDevice | NOR Flash 200Mhz /256Mbit NOR Flash / 1.8V /TFBGA 6*8mm /Industrial(-40? to +85?) /Tray | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LT256EBIRY | GigaDevice Semiconductor (HK) Limited | Description: NOR FLASH | auf Bestellung 256 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| GD25LT256EYAGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LX256EBIRY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 256MBIT SPI/OCTL 24TFBGA | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LX256EFIRR | GigaDevice Semiconductor (HK) Limited | Description: 256MBIT, 1.8V, SOP16 300MIL, IND Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 1.2ms Memory Interface: SPI - Octal I/O, DTR Access Time: 6 ns Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25LX256EFIRR | GigaDevice Semiconductor (HK) Limited | Description: 256MBIT, 1.8V, SOP16 300MIL, IND Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 1.2ms Memory Interface: SPI - Octal I/O, DTR Access Time: 6 ns Memory Organization: 32M x 8 | auf Bestellung 963 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25MPS17H | GENESIC SEMICONDUCTOR | Description: GENESIC SEMICONDUCTOR - GD25MPS17H - SiC-Schottky-Diode, MPS Series, Einfach, 1.7 kV, 56 A, 206 nC, TO-247 tariffCode: 85411000 Bauform - Diode: TO-247 Kapazitive Gesamtladung: 206nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 56A euEccn: NLR Wiederkehrende Spitzensperrspannung: 1.7kV Anzahl der Pins: 2 Pins Produktpalette: MPS Series productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (17-Jan-2023) | auf Bestellung 298 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD25MPS17H | GeneSiC Semiconductor | Silicon Carbide Schottky Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25MPS17H | GeneSiC Semiconductor | Description: DIODE SIL CARB 1.7KV 56A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1083pF @ 1V, 1MHz Current - Average Rectified (Io): 56A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A Current - Reverse Leakage @ Vr: 20 µA @ 1700 V | auf Bestellung 1440 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25MPS17H | GeneSiC Semiconductor | 1700V 25A TO-247-2 SiC Schottky MPS | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25MPS17H | GeneSiC Semiconductor | Schottky Diodes & Rectifiers 1700V 25A TO-247-2 SiC Schottky MPS | auf Bestellung 862 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25MPS17H | GeneSiC Semiconductor | Silicon Carbide Schottky Diode | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25PJY120F2S | STARPOWER SEMICONDUCTOR | GD25PJY120F2S IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25PJY120F2S | STARPOWER SEMICONDUCTOR LTD. | Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F2.0 Case: F2.0 Collector current: 25A Gate-emitter voltage: ±20V Pulsed collector current: 50A Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Technology: Advanced Trench FS IGBT Type of module: IGBT Max. off-state voltage: 1200V | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25PJY120F2S | STARPOWER | Description: STARPOWER - GD25PJY120F2S - IGBT-Modul, PIM-Dreiphasen-Eingangsgleichrichter, 49 A, 1.7 V, 188 W, 150 °C, Module tariffCode: 85412900 Transistormontage: Modul rohsCompliant: YES IGBT-Technologie: Trench/Feldstop hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.7V Dauer-Kollektorstrom: 49A usEccn: EAR99 IGBT-Anschluss: Lötanschluss euEccn: NLR Verlustleistung: 188W Bauform - Transistor: Module Produktpalette: PW Series Kollektor-Emitter-Spannung, max.: 1.2kV IGBT-Konfiguration: PIM-Dreiphasen-Eingangsgleichrichter productTraceability: No Betriebstemperatur, max.: 150°C SVHC: No SVHC (10-Jun-2022) | auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD25PJY120F5S | STARPOWER SEMICONDUCTOR | GD25PJY120F5S IGBT modules | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25PJY120F5S | STARPOWER SEMICONDUCTOR LTD. | Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; F5.1 Case: F5.1 Collector current: 25A Gate-emitter voltage: ±20V Pulsed collector current: 50A Semiconductor structure: diode/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Technology: Advanced Trench FS IGBT Type of module: IGBT Max. off-state voltage: 1200V | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25PJY120F5S | STARPOWER | Description: STARPOWER - GD25PJY120F5S - IGBT-Modul, PIM-Dreiphasen-Eingangsgleichrichter, 49 A, 1.7 V, 188 W, 150 °C, Module tariffCode: 85412900 Transistormontage: Modul rohsCompliant: YES IGBT-Technologie: Trench/Feldstop hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.7V Dauer-Kollektorstrom: 49A usEccn: EAR99 IGBT-Anschluss: Lötanschluss euEccn: NLR Verlustleistung: 188W Bauform - Transistor: Module Produktpalette: PW Series Kollektor-Emitter-Spannung, max.: 1.2kV IGBT-Konfiguration: PIM-Dreiphasen-Eingangsgleichrichter productTraceability: No Betriebstemperatur, max.: 150°C SVHC: No SVHC (10-Jun-2022) | auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD25PJY120L3S Produktcode: 194449 | Transistoren > Transistoren IGBT, Leistungsmodule | Produkt ist nicht verfügbar | ||||||||||||||||||
| GD25PJY120L3S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0 Electrical mounting: Press-in PCB Mechanical mounting: screw Case: L3.0 Pulsed collector current: 50A Max. off-state voltage: 1.2kV Type of module: IGBT Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 25A Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Technology: Advanced Trench FS IGBT Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25PJY120L3S | STARPOWER SEMICONDUCTOR | Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; L3.0 Electrical mounting: Press-in PCB Mechanical mounting: screw Case: L3.0 Pulsed collector current: 50A Max. off-state voltage: 1.2kV Type of module: IGBT Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V Collector current: 25A Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge Technology: Advanced Trench FS IGBT | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25PJY120L3S | STARPOWER | Description: STARPOWER - GD25PJY120L3S - IGBT-Modul, PIM-Dreiphasen-Eingangsgleichrichter, 50 A, 1.7 V, 252 W, 150 °C, Module tariffCode: 85412900 Transistormontage: Modul rohsCompliant: YES IGBT-Technologie: Trench/Feldstop hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.7V Dauer-Kollektorstrom: 50A usEccn: EAR99 IGBT-Anschluss: Lötanschluss euEccn: NLR Verlustleistung: 252W Bauform - Transistor: Module Produktpalette: PW Series Kollektor-Emitter-Spannung, max.: 1.2kV IGBT-Konfiguration: PIM-Dreiphasen-Eingangsgleichrichter productTraceability: No Betriebstemperatur, max.: 150°C SVHC: No SVHC (10-Jun-2022) | auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD25Q127CBIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 128MBIT SPI/QUAD 24TFBGA | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q127CBIGY | GigaDevice | NOR Flash 128Mbit NOR Flash /3.3V /TFBGA24(5*5 ball array) /Industrial(-40? to +85?) /Tray | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q127CFIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 16SOP | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q127CFIG | GigaDevice | NOR Flash 128Mbit NOR Flash /3.3V /SOP16 300mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q127CFIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 12µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Verified | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q127CFIGR | GigaDevice | NOR Flash 128Mbit NOR Flash /3.3V /SOP16 300mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q127CFIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 16SOP Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 12µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Verified | auf Bestellung 5981 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q127CSIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 12µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q127CSIG | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128MbFLASH; Quad I/O,SPI; 104MHz; 2.7÷3.6V; SOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: Quad I/O; SPI Operating frequency: 104MHz Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Anzahl je Verpackung: 4750 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q127CSIG | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128MbFLASH; Quad I/O,SPI; 104MHz; 2.7÷3.6V; SOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: Quad I/O; SPI Operating frequency: 104MHz Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q127CSIG | GigaDevice | NOR Flash 128Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q127CSIG | GigaDevice Semiconductor | NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 128M-bit 16M x 8 6.5ns 8-Pin SOP Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q127CSIGR | GigaDevice | NOR Flash 128Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q127CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 12µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Verified | auf Bestellung 14451 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q127CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 12µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Verified | auf Bestellung 14000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q127CSIGY | GigaDevice | NOR Flash 128Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /Tray | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q127CSJG | GigaDevice | NOR Flash 128Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +105?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q127CSJG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q127CSJGR | GigaDevice | NOR Flash 128Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +105?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q127CSJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q127CWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Not For New Designs Write Cycle Time - Word, Page: 12µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q127CWIGR | GigaDevice | NOR Flash 128Mbit NOR Flash /3.3V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q127CWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Not For New Designs Write Cycle Time - Word, Page: 12µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | auf Bestellung 5380 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q127CYIGR | Gigadevice Semiconductor | IC NOR Flash Memory SPI 128M MLP8 8x6mm | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q127CYIGR | GigaDevice | NOR Flash 128Mbit NOR Flash /3.3V /WSON8 8*6mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q127CYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Not For New Designs Write Cycle Time - Word, Page: 12µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q127CYIGR | GigaDevice Semiconductor | IC NOR Flash Memory SPI 128M MLP8 8x6mm | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q127CYIGR | GIGADEVICE | Pami??: NOR Flash | 128Mbit | Quad I/O,SPI | 104MHz | 2,7?3,6V | WSON8 GD25Q127CYIGR GigaDevice Semiconductor (HK) Limited PEF25q127cyigr Anzahl je Verpackung: 10 Stücke | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| GD25Q127CYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Not For New Designs Write Cycle Time - Word, Page: 12µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | auf Bestellung 8038 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q127CZIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 128MBIT SPI/QUAD 24TFBGA | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q127CZIGY | GigaDevice | NOR Flash 128Mbit NOR Flash /3.3V /TFBGA24(6*4 ball array) /Industrial(-40? to +85?) /Tray | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128CSIG | GigaDevice | NOR Flash 128Mb SPI NOR 2.7V-3.6V SOP8 2 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128CSIGR | GigaDevice | NOR Flash NOR FLASH 128M 3.3V, SOP8 208m | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128EBIRY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 128MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128EBIRY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128EBJRY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128EBJRY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 128MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 Write Cycle Time - Word, Page: 140µs, 4ms | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128EFIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128EFIRR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128EFIRR | GigaDevice | NOR Flash | auf Bestellung 998 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q128EQEGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128EQEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 Write Cycle Time - Word, Page: 140µs, 4ms | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128EQIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8USON Packaging: Cut Tape (CT) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | auf Bestellung 2628 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q128EQIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128EQIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128ESEGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128ESEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 Write Cycle Time - Word, Page: 140µs, 4ms | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128ESIG | GigaDevice | NOR Flash | auf Bestellung 8854 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q128ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q128ESIGR | GigaDevice | NOR Flash | auf Bestellung 5853 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q128ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | auf Bestellung 6644 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q128ESJGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128ESJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 Write Cycle Time - Word, Page: 140µs, 4ms | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128EWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128EWIGR | GigaDevice Semiconductor | GD25Q128EWIGR | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128EWIGR | GigaDevice | NOR Flash | auf Bestellung 5773 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q128EWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 DigiKey Programmable: Not Verified | auf Bestellung 4084 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q128EWIGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128EWIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128EYIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128MbFLASH; Quad I/O,SPI; 120MHz; 1.65÷2V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: Quad I/O; SPI Operating frequency: 120MHz Case: WSON8 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128EYIGR | GigaDevice Semiconductor (HK) Limited | Description: 128MBIT, 3.3V, WSON8 8*6MM, INDU Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | auf Bestellung 2823 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q128EYIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 128MbFLASH; Quad I/O,SPI; 120MHz; 1.65÷2V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 128Mb FLASH Interface: Quad I/O; SPI Operating frequency: 120MHz Case: WSON8 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 1.65...2V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128EYIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128EYIGR | GigaDevice Semiconductor (HK) Limited | Description: 128MBIT, 3.3V, WSON8 8*6MM, INDU Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128EYIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128EYIGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128EYJGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q128EYJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 128MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 16M x 8 Write Cycle Time - Word, Page: 140µs, 4ms | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16 | auf Bestellung 27500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
| GD25Q16CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q16CEIGR | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /WSON 3*2*0.45mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Cut Tape (CT) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | auf Bestellung 9550 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q16CNIGR | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /USON8 3*4mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16CNIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16CQIGR | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /USON8 4*4mm 0.45mm /Industrial(-40? to +105?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16CSIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16CSIG | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16CSIG | GigaDevice Semiconductor | NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 16M-bit 7ns Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16CSIG | GIGADEVICE | Pami??: NOR Flash | 16Mbit | Quad I/O,SPI | 120MHz | 2,7?3,6V | SOP8 GD25Q16CSIG; GD25Q16CSIGR; GD25Q16CSIGTR; GD25Q16CSIGTR PEF25q16csig Anzahl je Verpackung: 10 Stücke | auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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| GD25Q16CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Verified | auf Bestellung 22153 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q16CSIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; Quad I/O,SPI; 120MHz; 2.7÷3.6V; SOP8 Type of integrated circuit: FLASH memory Interface: Quad I/O; SPI Mounting: SMD Case: SOP8 Memory: 16Mb FLASH Operating temperature: -40...85°C Operating frequency: 120MHz Operating voltage: 2.7...3.6V Kind of memory: NOR Flash Kind of interface: serial Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Verified | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q16CSIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; Quad I/O,SPI; 120MHz; 2.7÷3.6V; SOP8 Type of integrated circuit: FLASH memory Interface: Quad I/O; SPI Mounting: SMD Case: SOP8 Memory: 16Mb FLASH Operating temperature: -40...85°C Operating frequency: 120MHz Operating voltage: 2.7...3.6V Kind of memory: NOR Flash Kind of interface: serial | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16CSIGR | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16CSJG | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +105?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16CSJG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16CSJGR | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +105?) /T&R | auf Bestellung 2082 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q16CSJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16CTEG | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +125?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16CTEGR | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +125?) /T&R | auf Bestellung 4420 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q16CTEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | auf Bestellung 11597 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q16CTEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q16CTIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16CTIG Produktcode: 124467 | IC > IC Speicher | Produkt ist nicht verfügbar | ||||||||||||||||||
| GD25Q16CTIG | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | auf Bestellung 130257 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q16CTIGR | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | auf Bestellung 126000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q16CTJG | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +105?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16CTJG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16CTJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16CTJGR | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +105?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16CWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8WSON | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16CWIGR | GigaDevice | NOR Flash 16Mbit NOR Flash /3.3V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16CWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8WSON | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16EEIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; Quad I/O,SPI; 133MHz; 2.7÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: Quad I/O; SPI Operating frequency: 133MHz Case: USON8 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16EEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16EEIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; Quad I/O,SPI; 133MHz; 2.7÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 16Mb FLASH Interface: Quad I/O; SPI Operating frequency: 133MHz Case: USON8 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16EEIGR | GigaDevice | NOR Flash | auf Bestellung 16757 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q16EEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Cut Tape (CT) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | auf Bestellung 2719 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q16EEJGR | GigaDevice | GigaDevice | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16EEJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 140µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16ENEGR | GigaDevice | GigaDevice | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16ENEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Write Cycle Time - Word, Page: 140µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16ENIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Cut Tape (CT) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16ENIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16ENIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16EQIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16EQIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16ESIG | GigaDevice | NOR Flash | auf Bestellung 8512 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q16ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | auf Bestellung 2272 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q16ESIGR | GigaDevice Semiconductor | GD25Q16ESIGR | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16ESIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; Quad I/O,SPI; 133MHz; 2.7÷3.6V; SO8 Type of integrated circuit: FLASH memory Interface: Quad I/O; SPI Mounting: SMD Case: SO8 Memory: 16Mb FLASH Operating temperature: -40...85°C Operating frequency: 133MHz Operating voltage: 2.7...3.6V Kind of memory: NOR Flash Anzahl je Verpackung: 2000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16ESIGR | GigaDevice | NOR Flash | auf Bestellung 4739 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q16ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16ESIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 16MbFLASH; Quad I/O,SPI; 133MHz; 2.7÷3.6V; SO8 Type of integrated circuit: FLASH memory Interface: Quad I/O; SPI Mounting: SMD Case: SO8 Memory: 16Mb FLASH Operating temperature: -40...85°C Operating frequency: 133MHz Operating voltage: 2.7...3.6V Kind of memory: NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16ESJGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16ESJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 Write Cycle Time - Word, Page: 140µs, 4ms | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16ETEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 140µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16ETEGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16ETIG | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16ETIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | auf Bestellung 18880 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q16ETIGR | GigaDevice | NOR Flash | auf Bestellung 3042 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q16ETIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q16ETJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 Write Cycle Time - Word, Page: 140µs, 4ms | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16ETJGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16EWIGR | GigaDevice | NOR Flash | auf Bestellung 2089 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q16EWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q16EWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 16MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 2M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q20CEAGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q20CEAGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 256K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q20CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD 8USON Packaging: Cut Tape (CT) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 256K x 8 DigiKey Programmable: Not Verified | auf Bestellung 8175 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q20CEIGR | GigaDevice | NOR Flash 2Mbit NOR Flash /3.3V /USON8 3*2*0.45mm /Industrial(-40? to +85?) /T&R | auf Bestellung 4128 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q20CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 256K x 8 DigiKey Programmable: Not Verified | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q20COIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-TSSOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 256K x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q20COIGR | GigaDevice | NOR Flash 2Mbit NOR Flash /3.3V /TSSOP8 173mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q20CSIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD I/O 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 256K x 8 DigiKey Programmable: Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q20CSIG | GigaDevice | NOR Flash 2Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q20CSIGR | GigaDevice | NOR Flash 2Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q20CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD I/O 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 256K x 8 DigiKey Programmable: Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q20CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD I/O 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 256K x 8 DigiKey Programmable: Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q20CTIG | GigaDevice | NOR Flash 2Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q20CTIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD I/O 8SOP Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 256K x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q20CTIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2MbFLASH; Dual SPI,QUAD SPI,SPI; 120MHz; SOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 2Mb FLASH Interface: Dual SPI; QUAD SPI; SPI Operating frequency: 120MHz Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Anzahl je Verpackung: 1 Stücke | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| GD25Q20CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD I/O 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 256K x 8 DigiKey Programmable: Not Verified | auf Bestellung 25960 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q20CTIGR | GigaDevice | NOR Flash 2Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /T&R | auf Bestellung 4535 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q20CTIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 2MbFLASH; Dual SPI,QUAD SPI,SPI; 120MHz; SOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 2Mb FLASH Interface: Dual SPI; QUAD SPI; SPI Operating frequency: 120MHz Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
| GD25Q20CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD I/O 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 256K x 8 DigiKey Programmable: Not Verified | auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q20EEAGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 140µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 256K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q20EEAGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q20EEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 256K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q20EEIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q20EKIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (1.5x1.5) Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 256K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q20EKIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q20ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 2MBIT, 3.3V, SOP8 208MIL, INDUST Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 256K x 8 | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q20ESIGR | GigaDevice Semiconductor (HK) Limited | Description: 2MBIT, 3.3V, SOP8 208MIL, INDUST Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 256K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q20ESIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q20ETIGR | GigaDevice | NOR Flash | auf Bestellung 2900 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q20ETIGR | GigaDevice Semiconductor (HK) Limited | Description: 2MBIT, 3.3V, SOP8 150MIL, INDUST Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 256K x 8 | auf Bestellung 1226 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q20ETIGR | GigaDevice Semiconductor (HK) Limited | Description: 2MBIT, 3.3V, SOP8 150MIL, INDUST Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 256K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q20ETJGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q20ETJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 2MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 2Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 140µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 256K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q21BTIG | GigaDevice | NOR Flash 2Mb SPI NOR 2.7V-3.6V SOP8 150 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q21BTIGR | GigaDevice | NOR Flash NOR FLASH 2M 3.3V, SOP8 150mil | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q21BTIGRR | GigaDevice | NOR Flash Use P/N GD25Q21BTIGR | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256DBIGY | GigaDevice | NOR Flash 256Mbit NOR Flash /3.3V /TFBGA24(5*5 ball array) /Industrial(-40? to +85?) /Tray | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256DBIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 256MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256DFIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q256DFIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 16SOP Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified | auf Bestellung 2068 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q256DFIGR | GigaDevice | NOR Flash 256Mbit NOR Flash /3.3V /SOP16 300mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256DYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q256DYIGR | GigaDevice | NOR Flash 256Mbit NOR Flash /3.3V /WSON8 8*6mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256DYIGR | GigaDevice Semiconductor | NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3.3V 256M-bit 256M/128M/64M x 1/2-bit/4-bit 7ns 8-Pin WSON EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256DYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 DigiKey Programmable: Not Verified | auf Bestellung 5728 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q256DYJGR | GigaDevice | NOR Flash 256Mbit NOR Flash /3.3V /WSON8 8*6mm /Industrial(-40? to +105?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256EBIRY | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 256MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256EBIRY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256EFIRR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256EFIRR | GigaDevice | NOR Flash | auf Bestellung 666 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q256EFIRY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 16SOP Packaging: Tray Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256EFIRY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256EFJRR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256EFJRR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256EWIGR | GigaDevice Semiconductor (HK) Limited | Description: 256MBIT, 3.3V, WSON8 6*5MM, INDU Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 90µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 32M x 8 | auf Bestellung 724 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q256EWIGR | GigaDevice Semiconductor (HK) Limited | Description: 256MBIT, 3.3V, WSON8 6*5MM, INDU Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 90µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256EWIGR | GigaDevice | NOR Flash | auf Bestellung 2970 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q256EWIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256EWIGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256EWJGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256EWJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256EYEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256EYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified | auf Bestellung 1803 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q256EYIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256EYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256EYIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tray Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256EYIGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256EYJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O Memory Organization: 32M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q256EYJGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q257DFIGR | GigaDevice | NOR Flash 256Mbit NOR Flash /ECC / 3.3V /SOP16 300mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q257DYIGR | GigaDevice | NOR Flash 256Mbit NOR Flash /ECC /3.3V /WSON8 8*6mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32BSIG | GIGADEVICE | Serial FLASH, Dual/Quad SPI, 32Mbit (4M x 8-bit), 120MHz, 2.7?3.6V, -40?85°C Repl. W25Q32FVSSIG, EN25Q32B-104HIP, S25FL032P0XMFI011, SST25VF032B-80-4I-S2AF GD25Q32BSIG PEF25q32bsig Anzahl je Verpackung: 5 Stücke | auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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| GD25Q32BSIG | GIGADEVICE | Serial FLASH, Dual/Quad SPI, 32Mbit (4M x 8-bit), 120MHz, 2.7?3.6V, -40?85°C Repl. W25Q32FVSSIG, EN25Q32B-104HIP, S25FL032P0XMFI011, SST25VF032B-80-4I-S2AF GD25Q32BSIG PEF25q32bsig Anzahl je Verpackung: 5 Stücke | auf Bestellung 95 Stücke: Lieferzeit 7-14 Tag (e) |
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| GD25Q32BSIGR | GigaDevice | NOR Flash NOR FLASH 32M 3.3V, SOP8 208mi | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32BSIGRR | GigaDevice | NOR Flash NOR FLASH 32M 3.3V, SOP8 208mi | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32BSIGRY | GigaDevice | NOR Flash NOR FLASH 32M 3.3V, SOP8 208mi | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32BWIGRR | GigaDevice | NOR Flash NOR FLASH 32M 3.3V, WSON8 6*5m | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CBIGY | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /TFBGA24(5*5 ball array) /Industrial(-40? to +85?) /Tray | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CBIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CHIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /USON8 3*3mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CHIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x3) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CNIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /USON8 3*4mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CNIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q32CNIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Cut Tape (CT) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x3) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | auf Bestellung 13610 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q32CSIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CSIG | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CSIG Produktcode: 124468 | IC > IC Speicher | Produkt ist nicht verfügbar | ||||||||||||||||||
| GD25Q32CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Verified | auf Bestellung 16000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q32CSIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CSIGR Produktcode: 165564 | IC > IC Speicher | Produkt ist nicht verfügbar | ||||||||||||||||||
| GD25Q32CSIGR | GigaDevice Semiconductor | 3.3V Uniform Sector Serial Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Verified | auf Bestellung 19966 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q32CSJG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CSJG | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +105?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CSJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CSJGR | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +105?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CSJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CTIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CTIG | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | auf Bestellung 13546 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q32CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q32CTIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CTIGR | Gigadevice Semiconductor | GD25Q32CTIGR | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CTJG | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +105?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CTJG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CTJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CTJGR | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +105?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CVIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8VSOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-VSOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CVIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /VSOP8 208mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CWIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; Quad I/O,SPI; 120MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 32Mb FLASH Interface: Quad I/O; SPI Operating frequency: 120MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CWIGR | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | auf Bestellung 19354 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q32CWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q32CWIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; Quad I/O,SPI; 120MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 32Mb FLASH Interface: Quad I/O; SPI Operating frequency: 120MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CZIGY | GigaDevice | NOR Flash 32Mbit NOR Flash /3.3V /TFBGA24(6*4 ball array) /Industrial(-40? to +85?) /Tray | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32CZIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32EEIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32EEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32ENEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Part Status: Active Write Cycle Time - Word, Page: 140µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32ENEGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32ENIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32ENIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32ESIG | GigaDevice Semiconductor | Uniform Sector Dual and Quad Serial Flash GD25Q32E | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32ESIG | GigaDevice | NOR Flash | auf Bestellung 6904 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q32ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q32ESIGR | GIGADEVICE | GD25Q32ESIGR Serial FLASH memories - integrated circ. | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32ESIGR | Gigadevice Semiconductor | NOR Flash Serial (SPI, Dual SPI, Quad SPI) 3V/3.3V 32M-bit 4M x 8 7ns 8-Pin SOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32ESIGR | GigaDevice Semiconductor | GD25Q32ESIGR | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32ESIGR | GigaDevice | NOR Flash | auf Bestellung 5246 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q32ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | auf Bestellung 4169 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q32ESJGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32ESJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 140µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32ETIG | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32ETIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32ETIGR | GigaDevice | NOR Flash | auf Bestellung 5361 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q32ETIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 DigiKey Programmable: Not Verified | auf Bestellung 5202 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q32ETJGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32ETJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 32MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 140µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32EWIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; Quad I/O,SPI; 133MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 32Mb FLASH Interface: Quad I/O; SPI Operating frequency: 133MHz Case: WSON8 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32EWIGR | GigaDevice Semiconductor (HK) Limited | Description: 32MBIT, 3.3V, WSON8 6*5MM, INDUS Packaging: Cut Tape (CT) Part Status: Active Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | auf Bestellung 2446 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q32EWIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 32MbFLASH; Quad I/O,SPI; 133MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 32Mb FLASH Interface: Quad I/O; SPI Operating frequency: 133MHz Case: WSON8 Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32EWIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32EWIGR | GigaDevice Semiconductor (HK) Limited | Description: 32MBIT, 3.3V, WSON8 6*5MM, INDUS Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 32Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 4M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q32EWJGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40CE2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40CE2GR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD 8USON Packaging: Cut Tape (CT) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 512K x 8 DigiKey Programmable: Not Verified | auf Bestellung 23410 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q40CEIGR | GigaDevice | NOR Flash 4Mbit NOR Flash /3.3V /USON8 3*2*0.45mm /Industrial(-40? to +85?) /T&R | auf Bestellung 4444 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q40CEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 512K x 8 DigiKey Programmable: Not Verified | auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q40CEJGR | GigaDevice | NOR Flash 4Mbit NOR Flash /3.3V /USON8 3*2*0.45mm /Industrial(-40? to +105?) /T&R | auf Bestellung 5279 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q40CEJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 4MBIT SPI/QUAD I/O 8USON Packaging: Cut Tape (CT) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 512K x 8 DigiKey Programmable: Not Verified | auf Bestellung 7169 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q40CEJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLSH 4MBIT SPI/QUAD I/O 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 8-USON (2x3) Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 512K x 8 DigiKey Programmable: Not Verified | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q40CSIG | GigaDevice | NOR Flash 4Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40CSIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD I/O 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 512K x 8 DigiKey Programmable: Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD I/O 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 512K x 8 DigiKey Programmable: Verified | auf Bestellung 5111 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q40CSIGR | GigaDevice | NOR Flash 4Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /T&R | auf Bestellung 4498 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q40CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD I/O 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 512K x 8 DigiKey Programmable: Verified | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q40CT2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 80 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40CT2GR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40CTIG | GigaDevice Semiconductor | Serial Flash Memory | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40CTIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD I/O 8SOP Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 512K x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40CTIG | GigaDevice | NOR Flash 4Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40CTIGR | GigaDevice | NOR Flash 4Mbit NOR Flash /3.3V /SOP8 150mil /Industrial(-40? to +85?) /T&R | auf Bestellung 6480 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q40CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD I/O 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 512K x 8 DigiKey Programmable: Not Verified | auf Bestellung 12730 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q40CTIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD I/O 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 104 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 512K x 8 DigiKey Programmable: Not Verified | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q40EEAGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 140µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40EEAGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40EEIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40EEIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x2) Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40EKIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-XFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (1.5x1.5) Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40EKIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40ESIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40ET2GR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40ETAGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40ETEGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40ETEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 140µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40ETIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40ETIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40ETJGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q40ETJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 4MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Write Cycle Time - Word, Page: 140µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 512K x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q512SCP | GIGADEVI | auf Bestellung 4154 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
| GD25Q64CBIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CBIGY | GigaDevice | NOR Flash 64Mbit NOR Flash /3.3V /TFBGA24(5*5 ball array) /Industrial(-40? to +85?) /Tray | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CFIG Produktcode: 124110 | IC > IC andere | Produkt ist nicht verfügbar | ||||||||||||||||||
| GD25Q64CFIG | GigaDevice | NOR Flash 64Mbit NOR Flash /3.3V /SOP16 300mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CFIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 16SOP Packaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CFIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 16SOP Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CFIGR | GigaDevice | NOR Flash 64Mbit NOR Flash /3.3V /SOP16 300mil /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CFIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 16-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CPIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8DIP Packaging: Tube Package / Case: 8-DIP (0.260", 6.60mm) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-DIP Part Status: Obsolete Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CPIG | GigaDevice | NOR Flash 64Mbit NOR Flash /3.3V /DIP8 300mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CQIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CQIGR | GigaDevice | NOR Flash 64Mbit NOR Flash /3.3V /USON8 4*4mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CSIG | GigaDevice Semiconductor | Dual and Quad Serial Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CSIG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CSIG | GigaDevice | NOR Flash 64Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Verified | auf Bestellung 42928 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q64CSIGR | Gigadevice Semiconductor | 3.3V Uniform Sector Dual and Quad Serial Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CSIGR | GIGADEVICE | FLASH - NOR Memory IC 64Mb (8M x 8) SPI - Quad I/O 120MHz 8-SOP GD25Q64CSIG PEF25q64csig Anzahl je Verpackung: 10 Stücke | auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| GD25Q64CSIGR | GigaDevice Semiconductor | 3.3V Uniform Sector Dual and Quad Serial Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CSIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Verified | auf Bestellung 42000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q64CSIGR | GigaDevice | NOR Flash 64Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +85?) /T&R | auf Bestellung 394 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q64CSIGTR Produktcode: 149250 | IC > IC Speicher | Produkt ist nicht verfügbar | ||||||||||||||||||
| GD25Q64CSJG | GigaDevice | NOR Flash 64Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +105?) /Tube | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CSJG | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tube Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CSJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Verified | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q64CSJGR | GigaDevice | NOR Flash 64Mbit NOR Flash /3.3V /SOP8 208mil /Industrial(-40? to +105?) /T&R | auf Bestellung 4031 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q64CSJGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Verified | auf Bestellung 5386 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q64CW2GR | GigaDevice | NOR Flash Uniform Sector Dual and Quad Serial Flash | auf Bestellung 5378 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q64CW2GR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Write Cycle Time - Word, Page: 60µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q64CWIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; Quad I/O,SPI; 120MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: Quad I/O; SPI Operating frequency: 120MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CWIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Part Status: Not For New Designs Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | auf Bestellung 48084 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q64CWIGR | GIGADEVICE | Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 64MbFLASH; Quad I/O,SPI; 120MHz; 2.7÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Flash Memory: 64Mb FLASH Interface: Quad I/O; SPI Operating frequency: 120MHz Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CWIGR | GigaDevice | NOR Flash 64Mbit NOR Flash /3.3V /WSON8 6*5mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8WSON Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CYIGR | GigaDevice | NOR Flash 64Mbit NOR Flash /3.3V /WSON8 8*6mm /Industrial(-40? to +85?) /T&R | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CYIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8WSON Packaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | auf Bestellung 5553 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q64CZIGY | GigaDevice | NOR Flash 64Mbit NOR Flash /3.3V /TFBGA24(6*4 ball array) /Industrial(-40? to +85?) /Tray | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64CZIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 120 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Part Status: Active Write Cycle Time - Word, Page: 50µs, 2.4ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64EBIGY | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64EBIGY | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 24TFBGA Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64EFIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64EFIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 16SOP Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Supplier Device Package: 16-SOP Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64ENEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Write Cycle Time - Word, Page: 140µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64ENEGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64ENIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64ENIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (3x4) Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64EQEGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64EQEGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-USON (4x4) Write Cycle Time - Word, Page: 140µs, 4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64EQIGR | GigaDevice | NOR Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64EQIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8USON Packaging: Tape & Reel (TR) Package / Case: 8-XDFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 8-USON (4x4) Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64ESIG | GigaDevice Semiconductor | 64M-bit Serial Flash | Produkt ist nicht verfügbar | |||||||||||||||||
| GD25Q64ESIG | GigaDevice | NOR Flash | auf Bestellung 5004 Stücke: Lieferzeit 14-28 Tag (e) |
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| GD25Q64ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | auf Bestellung 4413 Stücke: Lieferzeit 21-28 Tag (e) |
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| GD25Q64ESIGR | GigaDevice Semiconductor (HK) Limited | Description: IC FLASH 64MBIT SPI/QUAD 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOP Part Status: Active Write Cycle Time - Word, Page: 70µs, 2.4ms Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 DigiKey Programmable: Not Verified | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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