Produkte > NLQ

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
NLQ0805T-033JTDK05+
auf Bestellung 12010 Stücke:
Lieferzeit 21-28 Tag (e)
NLQ0805T-082J
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
NLQ0805TL-033JTDK2006
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
NLQ0805TL-056J
auf Bestellung 1570 Stücke:
Lieferzeit 21-28 Tag (e)
NLQ2003
auf Bestellung 75 Stücke:
Lieferzeit 21-28 Tag (e)
NLQ26PFS-6NETInsignis Technology CorporationDescription: LPDDR4 2GB X16 3200MHZ CL22 10X1
Packaging: Tray
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-FBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 128M x 16
Produkt ist nicht verfügbar
NLQ26PFS-6NET TRInsignis Technology CorporationDescription: LPDDR4 2GB X16 3200MHZ CL22 10X1
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-FBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 128M x 16
Produkt ist nicht verfügbar
NLQ26PFS-6NET TRInsignis Technology CorporationDescription: LPDDR4 2GB X16 3200MHZ CL22 10X1
Packaging: Cut Tape (CT)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-FBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 128M x 16
Produkt ist nicht verfügbar
NLQ26PFS-8NETInsignis Technology CorporationDescription: LPDDR4 2GB X16 2400MHZ CL16 10X1
Packaging: Tray
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 200-FBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 128M x 16
Produkt ist nicht verfügbar
NLQ26PFS-8NET TRInsignis Technology CorporationDescription: LPDDR4 2GB X16 2400MHZ CL16 10X1
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 200-FBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 128M x 16
Produkt ist nicht verfügbar
NLQ26PFS-8NET TRInsignis Technology CorporationDescription: LPDDR4 2GB X16 2400MHZ CL16 10X1
Packaging: Cut Tape (CT)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 200-FBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 128M x 16
Produkt ist nicht verfügbar
NLQ32K100TRFNIC ComponentsInductor Power Chip Unshielded Wirewound 10uH 10% 1MHz 0.23A 1.69Ohm DCR 1206 T/R
Produkt ist nicht verfügbar
NLQ32K220TRFNIC ComponentsInductor Power Chip Unshielded Wirewound 22uH 10% 1MHz 0.16A 3.9Ohm DCR 1206 T/R
Produkt ist nicht verfügbar
NLQ32M1R0TRFNIC ComponentsInductor Power Chip Unshielded Wirewound 1uH 20% 1MHz 0.51A 0.364Ohm DCR 1206 T/R
Produkt ist nicht verfügbar
NLQ35K100TRFNIC ComponentsInductor Power Chip Unshielded Wirewound 10uH 10% 1MHz 0.3A 0.572Ohm DCR 1210 T/R
Produkt ist nicht verfügbar
NLQ35K101TRFNIC ComponentsInductor Power Chip Unshielded Wirewound 100uH 10% 1MHz 0.1A 4.55Ohm DCR 1210 T/R
Produkt ist nicht verfügbar
NLQ35K220TRFNIC ComponentsInductor Power Chip Unshielded Wirewound 22uH 10% 1MHz 0.25A 0.923Ohm DCR 1210 T/R
Produkt ist nicht verfügbar
NLQ35K220TRFNIC ComponentsInductor Power Chip Unshielded Wirewound 22uH 10% 1MHz 0.25A 0.923Ohm DCR 1210 T/R
Produkt ist nicht verfügbar
NLQ43PFS-6NATInsignis Technology CorporationDescription: LPDDR4 4GB X32 3200MHZ CL22 10X1
Packaging: Tray
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-FBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 128M x 32
Qualification: AEC-Q100
Produkt ist nicht verfügbar
NLQ43PFS-6NAT TRInsignis Technology CorporationDescription: LPDDR4 4GB X32 3200MHZ CL22 10X1
Packaging: Cut Tape (CT)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-FBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 128M x 32
Qualification: AEC-Q100
Produkt ist nicht verfügbar
NLQ43PFS-6NAT TRInsignis Technology CorporationDescription: LPDDR4 4GB X32 3200MHZ CL22 10X1
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-FBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 128M x 32
Qualification: AEC-Q100
Produkt ist nicht verfügbar
NLQ43PFS-6NETInsignis Technology CorporationDescription: LPDDR4 4GB X32 3200MHZ CL22 10X1
Packaging: Tray
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-FBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 128M x 32
Produkt ist nicht verfügbar
NLQ43PFS-6NET TRInsignis Technology CorporationDescription: LPDDR4 4GB X32 3200MHZ CL22 10X1
Packaging: Cut Tape (CT)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-FBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 128M x 32
Produkt ist nicht verfügbar
NLQ43PFS-6NET TRInsignis Technology CorporationDescription: LPDDR4 4GB X32 3200MHZ CL22 10X1
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-FBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 128M x 32
Produkt ist nicht verfügbar
NLQ43PFS-6NITInsignis Technology CorporationDescription: LPDDR4 4GB X32 3200MHZ CL22 10X1
Packaging: Tray
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-FBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 128M x 32
Produkt ist nicht verfügbar
NLQ43PFS-6NIT TRInsignis Technology CorporationDescription: LPDDR4 4GB X32 3200MHZ CL22 10X1
Packaging: Cut Tape (CT)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-FBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 128M x 32
Produkt ist nicht verfügbar
NLQ43PFS-6NIT TRInsignis Technology CorporationDescription: LPDDR4 4GB X32 3200MHZ CL22 10X1
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-FBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 128M x 32
Produkt ist nicht verfügbar
NLQ43PFS-8NATInsignis Technology CorporationDescription: LPDDR4 4GB X32 2400MHZ CL16 10X1
Packaging: Tray
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 200-FBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 128M x 32
Qualification: AEC-Q100
Produkt ist nicht verfügbar
NLQ43PFS-8NAT TRInsignis Technology CorporationDescription: LPDDR4 4GB X32 2400MHZ CL16 10X1
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 200-FBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 128M x 32
Qualification: AEC-Q100
Produkt ist nicht verfügbar
NLQ43PFS-8NAT TRInsignis Technology CorporationDescription: LPDDR4 4GB X32 2400MHZ CL16 10X1
Packaging: Cut Tape (CT)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 200-FBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 128M x 32
Qualification: AEC-Q100
Produkt ist nicht verfügbar
NLQ43PFS-8NETInsignis Technology CorporationDescription: LPDDR4 4GB X32 2400MHZ CL16 10X1
Packaging: Tray
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 200-FBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 128M x 32
Produkt ist nicht verfügbar
NLQ43PFS-8NET TRInsignis Technology CorporationDescription: LPDDR4 4GB X32 2400MHZ CL16 10X1
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 200-FBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 128M x 32
Produkt ist nicht verfügbar
NLQ43PFS-8NET TRInsignis Technology CorporationDescription: LPDDR4 4GB X32 2400MHZ CL16 10X1
Packaging: Cut Tape (CT)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 200-FBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 128M x 32
Produkt ist nicht verfügbar
NLQ43PFS-8NITInsignis Technology CorporationDescription: LPDDR4 4GB X32 2400MHZ CL16 10X1
Packaging: Tray
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 200-FBGA (10x14.5)
Memory Interface: LVSTL
Memory Organization: 128M x 32
Produkt ist nicht verfügbar
NLQ43PFS-8NIT TRInsignis Technology CorporationDescription: LPDDR4 4GB X32 2400MHZ CL16 10X1
Packaging: Cut Tape (CT)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 200-FBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 128M x 32
Produkt ist nicht verfügbar
NLQ43PFS-8NIT TRInsignis Technology CorporationDescription: LPDDR4 4GB X32 2400MHZ CL16 10X1
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.2 GHz
Memory Format: DRAM
Supplier Device Package: 200-FBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 128M x 32
Produkt ist nicht verfügbar
NLQ45K101TRFNIC ComponentsInductor Power Chip Unshielded Wirewound 100uH 10% 1MHz 0.19A 2.2Ohm DCR 1812 T/R
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
NLQ45K101TRFNIC ComponentsInductor Power Chip Unshielded Wirewound 100uH 10% 1MHz 0.19A 2.2Ohm DCR 1812 T/R
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
NLQ45K101TRFNIC ComponentsInductor Power Chip Unshielded Wirewound 100uH 10% 1MHz 0.19A 2.2Ohm DCR 1812 T/R
auf Bestellung 3500 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.34 EUR
1000+ 0.3 EUR
2000+ 0.27 EUR
Mindestbestellmenge: 500
NLQ45K101TRFNIC ComponentsInductor Power Chip Unshielded Wirewound 100uH 10% 1MHz 0.19A 2.2Ohm DCR 1812 T/R
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
NLQ45K101TRFNIC ComponentsInductor Power Chip Unshielded Wirewound 100uH 10% 1MHz 0.19A 2.2Ohm DCR 1812 T/R
Produkt ist nicht verfügbar
NLQ45K101TRFNIC ComponentsInductor Power Chip Unshielded Wirewound 100uH 10% 1MHz 0.19A 2.2Ohm DCR 1812 T/R
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)