Produkte > RRF
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
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| RRF015P03 | auf Bestellung 27000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| RRF015P03GTL | ROHM Semiconductor | MOSFET 4V Drive Pch MOSFET Drive Pch | auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) |
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| RRF015P03GTL | Rohm Semiconductor | Description: MOSFET P-CH 30V 1.5A TUMT3 Packaging: Tape & Reel (TR) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TUMT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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| RRF015P03GTL | Rohm Semiconductor | Description: MOSFET P-CH 30V 1.5A TUMT3 Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TUMT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V | auf Bestellung 12421 Stücke: Lieferzeit 21-28 Tag (e) |
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| RRF015P03TL | Rohm Semiconductor | Description: MOSFET P-CH 30V 1.5A TUMT3 Packaging: Tape & Reel (TR) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TUMT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| RRF015P03TL | ROHM SEMICONDUCTOR | RRF015P03TL SMD P channel transistors | auf Bestellung 2065 Stücke: Lieferzeit 7-14 Tag (e) |
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| RRF015P03TL | ROHM | Description: ROHM - RRF015P03TL - Leistungs-MOSFET, p-Kanal, 30 V, 1.5 A, 0.115 ohm, TUMT, Oberflächenmontage SVHC: No SVHC (08-Jul-2021) | Produkt ist nicht verfügbar | |||||||||||||||
| RRF015P03TL | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| RRF015P03TL | Rohm Semiconductor | Description: MOSFET P-CH 30V 1.5A TUMT3 Packaging: Cut Tape (CT) Package / Case: 3-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 1.5A, 10V Power Dissipation (Max): 320mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TUMT3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V | auf Bestellung 5445 Stücke: Lieferzeit 21-28 Tag (e) |
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| RRF015P03TL | ROHM Semiconductor | MOSFET Trans MOSFET P-CH 30V 1.5A | auf Bestellung 80913 Stücke: Lieferzeit 14-28 Tag (e) |
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| RRFF122 | HARRIS | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| RRFQ1-433 Produktcode: 42092 | Modulare Elemente > IC Radiomodule | Produkt ist nicht verfügbar |