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RXH070N03TB1Rohm SemiconductorDescription: MOSFET N-CH 30V 7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RXH070N03TB1Rohm SemiconductorDescription: MOSFET N-CH 30V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 10 V
auf Bestellung 2446 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.41 EUR
12+1.53 EUR
100+1.02 EUR
500+0.80 EUR
1000+0.73 EUR
Mindestbestellmenge: 8
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RXH070N03TB1ROHM SemiconductorMOSFETs 4V Drive Nch MOSFET. MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in th
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RXH090N03TB1ROHM SemiconductorMOSFETs SOP8 N CHAN 45V
auf Bestellung 4889 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.19 EUR
10+2.09 EUR
100+1.41 EUR
500+1.12 EUR
1000+1.02 EUR
2500+0.96 EUR
5000+0.89 EUR
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RXH090N03TB1Rohm SemiconductorDescription: 4V DRIVE NCH MOSFET: MOSFETS ARE
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
auf Bestellung 1498 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.80 EUR
10+1.96 EUR
100+1.37 EUR
500+1.09 EUR
1000+0.99 EUR
Mindestbestellmenge: 7
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RXH090N03TB1ROHM SEMICONDUCTORRXH090N03TB1 SMD N channel transistors
Produkt ist nicht verfügbar
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RXH090N03TB1Rohm SemiconductorDescription: 4V DRIVE NCH MOSFET: MOSFETS ARE
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V
Produkt ist nicht verfügbar
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RXH100N03TB1ROHM SemiconductorMOSFETs SOP8 N CHAN 45V
auf Bestellung 3871 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.12 EUR
10+2.06 EUR
100+1.42 EUR
500+1.14 EUR
1000+1.05 EUR
2500+1.01 EUR
5000+0.96 EUR
Im Einkaufswagen  Stück im Wert von  UAH
RXH100N03TB1Rohm SemiconductorDescription: 4V DRIVE NCH MOSFET: MOSFETS ARE
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RXH100N03TB1Rohm SemiconductorDescription: 4V DRIVE NCH MOSFET: MOSFETS ARE
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
auf Bestellung 2442 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.01 EUR
10+2.10 EUR
100+1.46 EUR
500+1.16 EUR
1000+1.07 EUR
Mindestbestellmenge: 6
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RXH10BJB-AX-4RAAVitrohmRes Wirewound Aluminium Housed 4 Ohm 5% 100W ±260ppm/C Chassis Mount Bulk
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RXH125N03TB1ROHM SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 12.5A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 36A
Case: SOP8
Anzahl je Verpackung: 1 Stücke
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RXH125N03TB1Rohm SemiconductorDescription: MOSFET N-CH 30V 12.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 12.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
Produkt ist nicht verfügbar
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RXH125N03TB1ROHM SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 12.5A
On-state resistance: 14mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12.7nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 36A
Case: SOP8
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RXH125N03TB1ROHM SemiconductorMOSFETs RECOMMENDED ALT 755-RS3E135BNGZETB
auf Bestellung 1298 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.11 EUR
10+1.74 EUR
100+1.35 EUR
500+1.14 EUR
1000+0.93 EUR
2500+0.87 EUR
5000+0.83 EUR
Mindestbestellmenge: 2
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RXH50BJB-AX-40RAAVitrohmRes Wirewound 40 Ohm 5% 50W ±260ppm/C Aluminum Housed RDL Bulk
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RXH50BJB-SM-100RAAYageoRes Wirewound 100 Ohm 5% 50W ±260ppm/C Aluminum Housed RDL Bulk
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RXH50BKB-AX-20RAAVitrohmRes Wirewound 20 Ohm 10% 50W ±260ppm/C Aluminum Housed RDL Bulk
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