Produkte > RXH
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||||||
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| RXH070N03TB1 | Rohm Semiconductor | Description: MOSFET N-CH 30V 7A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 10 V | auf Bestellung 2549 Stücke: Lieferzeit 10-14 Tag (e) |
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| RXH070N03TB1 | ROHM Semiconductor | MOSFETs Nch 30V 7A Power MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RXH070N03TB1 | Rohm Semiconductor | Description: MOSFET N-CH 30V 7A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 10 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| RXH090N03TB1 | Rohm Semiconductor | Description: 4V DRIVE NCH MOSFET: MOSFETS ARE Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RXH090N03TB1 | ROHM Semiconductor | MOSFETs SOP8 N-CH 30V 9A | auf Bestellung 4848 Stücke: Lieferzeit 10-14 Tag (e) |
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| RXH090N03TB1 | Rohm Semiconductor | Description: 4V DRIVE NCH MOSFET: MOSFETS ARE Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 10 V | auf Bestellung 1133 Stücke: Lieferzeit 10-14 Tag (e) |
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| RXH100N03TB1 | Rohm Semiconductor | Description: 4V DRIVE NCH MOSFET: MOSFETS ARE Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V | auf Bestellung 2402 Stücke: Lieferzeit 10-14 Tag (e) |
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| RXH100N03TB1 | ROHM Semiconductor | MOSFETs SOP8 N-CH 30V 10A | auf Bestellung 3839 Stücke: Lieferzeit 10-14 Tag (e) |
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| RXH100N03TB1 | Rohm Semiconductor | Description: 4V DRIVE NCH MOSFET: MOSFETS ARE Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RXH125N03TB1 | Rohm Semiconductor | Description: MOSFET N-CH 30V 12.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Rds On (Max) @ Id, Vgs: 12mOhm @ 12.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| RXH125N03TB1 | ROHM Semiconductor | MOSFETs RECOMMENDED ALT 755-RS3E135BNGZETB | auf Bestellung 1298 Stücke: Lieferzeit 10-14 Tag (e) |
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