RXH100N03TB1 Rohm Semiconductor

Description: 4V DRIVE NCH MOSFET: MOSFETS ARE, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V.