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RXH100N03TB1

RXH100N03TB1 ROHM Semiconductor

datasheet?p=RXH100N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
MOSFETs SOP8 N CHAN 45V
auf Bestellung 3871 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.52 EUR
10+1.90 EUR
100+1.47 EUR
500+1.14 EUR
1000+1.07 EUR
2500+1.00 EUR
5000+0.91 EUR
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Technische Details RXH100N03TB1 ROHM Semiconductor

Description: 4V DRIVE NCH MOSFET: MOSFETS ARE, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V.

Weitere Produktangebote RXH100N03TB1 nach Preis ab 1.07 EUR bis 3.01 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RXH100N03TB1 RXH100N03TB1 Hersteller : Rohm Semiconductor datasheet?p=RXH100N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 4V DRIVE NCH MOSFET: MOSFETS ARE
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
auf Bestellung 2442 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.01 EUR
10+2.10 EUR
100+1.46 EUR
500+1.16 EUR
1000+1.07 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
RXH100N03TB1 RXH100N03TB1 Hersteller : Rohm Semiconductor datasheet?p=RXH100N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 4V DRIVE NCH MOSFET: MOSFETS ARE
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
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Im Einkaufswagen  Stück im Wert von  UAH