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RXH100N03TB1

RXH100N03TB1 ROHM Semiconductor

datasheet?p=RXH100N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
MOSFET MOSFET
auf Bestellung 3881 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.41 EUR
10+ 1.99 EUR
100+ 1.54 EUR
500+ 1.3 EUR
1000+ 1.15 EUR
2500+ 0.97 EUR
5000+ 0.95 EUR
Mindestbestellmenge: 2
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Technische Details RXH100N03TB1 ROHM Semiconductor

Description: 4V DRIVE NCH MOSFET: MOSFETS ARE, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V, Power Dissipation (Max): 2W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V.

Weitere Produktangebote RXH100N03TB1 nach Preis ab 1.07 EUR bis 2.45 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RXH100N03TB1 RXH100N03TB1 Hersteller : Rohm Semiconductor datasheet?p=RXH100N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 4V DRIVE NCH MOSFET: MOSFETS ARE
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
auf Bestellung 2442 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.45 EUR
10+ 1.99 EUR
100+ 1.55 EUR
500+ 1.31 EUR
1000+ 1.07 EUR
Mindestbestellmenge: 8
RXH100N03TB1 RXH100N03TB1 Hersteller : Rohm Semiconductor datasheet?p=RXH100N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: 4V DRIVE NCH MOSFET: MOSFETS ARE
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
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