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BUK9M17-30EX BUK9M17-30EX Nexperia USA Inc. BUK9M17-30E.pdf Description: MOSFET N-CH 30V 37A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2921 Stücke:
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17+1.09 EUR
21+0.85 EUR
100+0.62 EUR
500+0.51 EUR
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BUK9M23-80EX BUK9M23-80EX Nexperia USA Inc. BUK9M23-80E.pdf Description: MOSFET N-CH 80V 37A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4155 Stücke:
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13+1.36 EUR
17+1.08 EUR
100+0.82 EUR
500+0.69 EUR
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BUK9M24-60EX BUK9M24-60EX Nexperia USA Inc. BUK9M24-60E.pdf Description: MOSFET N-CH 60V 32A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1469 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2418 Stücke:
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14+1.28 EUR
20+0.89 EUR
100+0.61 EUR
500+0.5 EUR
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BUK9M34-100EX BUK9M34-100EX Nexperia USA Inc. BUK9M34-100E.pdf Description: MOSFET N-CH 100V 29A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7831 Stücke:
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16+1.16 EUR
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500+0.63 EUR
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BUK9M35-80EX BUK9M35-80EX Nexperia USA Inc. BUK9M35-80E.pdf Description: MOSFET N-CH 80V 26A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1626 Stücke:
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13+1.37 EUR
19+0.98 EUR
100+0.67 EUR
500+0.6 EUR
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BUK9M42-60EX BUK9M42-60EX Nexperia USA Inc. BUK9M42-60E.pdf Description: MOSFET N-CH 60V 22A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3118 Stücke:
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24+0.76 EUR
30+0.6 EUR
100+0.49 EUR
500+0.44 EUR
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BUK9M85-60EX BUK9M85-60EX Nexperia USA Inc. BUK9M85-60E.pdf Description: MOSFET N-CH 60V 12.8A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2061 Stücke:
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19+0.97 EUR
25+0.73 EUR
100+0.51 EUR
500+0.39 EUR
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BUK9M9R1-40EX BUK9M9R1-40EX Nexperia USA Inc. BUK9M9R1-40E.pdf Description: MOSFET N-CH 40V 64A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2048 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3194 Stücke:
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17+1.07 EUR
18+1.03 EUR
100+0.8 EUR
500+0.68 EUR
Mindestbestellmenge: 17
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PSMN010-80YLX PSMN010-80YLX Nexperia USA Inc. PSMN010-80YL.pdf Description: MOSFET N-CH 80V 84A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6506 pF @ 25 V
auf Bestellung 4557 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.27 EUR
12+1.56 EUR
100+1.17 EUR
500+1 EUR
Mindestbestellmenge: 8
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PSMN013-60YLX PSMN013-60YLX Nexperia USA Inc. PSMN013-60YL.pdf Description: MOSFET N-CH 60V 53A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2603 pF @ 25 V
auf Bestellung 7452 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.34 EUR
18+1.03 EUR
100+0.75 EUR
500+0.64 EUR
Mindestbestellmenge: 14
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PSMN021-100YLX PSMN021-100YLX Nexperia USA Inc. PSMN021-100YL.pdf Description: MOSFET N-CH 100V 49A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
auf Bestellung 4615 Stücke:
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12+1.55 EUR
15+1.21 EUR
100+0.84 EUR
500+0.79 EUR
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PSMN025-80YLX PSMN025-80YLX Nexperia USA Inc. PSMN025-80YL.pdf Description: MOSFET N-CH 80V 37A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2703 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.43 EUR
19+0.98 EUR
100+0.71 EUR
500+0.58 EUR
Mindestbestellmenge: 13
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PSMN5R6-60YLX PSMN5R6-60YLX Nexperia USA Inc. PSMN5R6-60YL.pdf Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5026 pF @ 25 V
auf Bestellung 5689 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.5 EUR
12+1.58 EUR
100+1.06 EUR
500+0.83 EUR
Mindestbestellmenge: 8
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PSMN7R5-60YLX PSMN7R5-60YLX Nexperia USA Inc. PSMN7R5-60YL.pdf Description: MOSFET N-CH 60V 86A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V
auf Bestellung 37913 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.72 EUR
15+1.19 EUR
100+0.9 EUR
500+0.88 EUR
Mindestbestellmenge: 11
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PMZ600UNELYL PMZ600UNELYL Nexperia USA Inc. PMZ600UNEL.pdf Description: MOSFET N-CH 20V 600MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.058 EUR
Mindestbestellmenge: 10000
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PMZ950UPELYL PMZ950UPELYL Nexperia USA Inc. PMZ950UPEL.pdf Description: MOSFET P-CH 20V 500MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
auf Bestellung 10000 Stücke:
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10000+0.11 EUR
Mindestbestellmenge: 10000
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PMDXB600UNELZ PMDXB600UNELZ Nexperia USA Inc. PMDXB600UNEL.pdf Description: MOSFET 2N-CH 20V 0.6A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
auf Bestellung 5000 Stücke:
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5000+0.1 EUR
Mindestbestellmenge: 5000
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PMDXB950UPELZ PMDXB950UPELZ Nexperia USA Inc. PMDXB950UPEL.pdf Description: MOSFET 2P-CH 20V 0.5A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
auf Bestellung 25000 Stücke:
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5000+0.15 EUR
10000+0.14 EUR
15000+0.13 EUR
Mindestbestellmenge: 5000
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PMCXB900UELZ PMCXB900UELZ Nexperia USA Inc. PMCXB900UEL.pdf Description: MOSFET N/P-CH 20V 0.6A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
Produkt ist nicht verfügbar
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PMZ600UNELYL PMZ600UNELYL Nexperia USA Inc. PMZ600UNEL.pdf Description: MOSFET N-CH 20V 600MA DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V
auf Bestellung 33319 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
76+0.23 EUR
143+0.12 EUR
500+0.11 EUR
1000+0.099 EUR
2000+0.092 EUR
5000+0.086 EUR
Mindestbestellmenge: 50
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PMZ950UPELYL PMZ950UPELYL Nexperia USA Inc. PMZ950UPEL.pdf Description: MOSFET P-CH 20V 500MA DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
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PMDXB600UNELZ PMDXB600UNELZ Nexperia USA Inc. PMDXB600UNEL.pdf Description: MOSFET 2N-CH 20V 0.6A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
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PMDXB950UPELZ PMDXB950UPELZ Nexperia USA Inc. PMDXB950UPEL.pdf Description: MOSFET 2P-CH 20V 0.5A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
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PMCXB900UELZ PMCXB900UELZ Nexperia USA Inc. PMCXB900UEL.pdf Description: MOSFET N/P-CH 20V 0.6A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
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PESD24VF1BSFYL PESD24VF1BSFYL Nexperia USA Inc. PESD24VF1BSF.pdf Description: TVS DIODE 24VWM 17VC DSN0603-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.5V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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BAT54XYH BAT54XYH Nexperia USA Inc. BAT54XY.pdf Description: DIODE ARR SCHOT 30V 200MA 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: 6-TSSOP
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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PMT280ENEAX PMT280ENEAX Nexperia USA Inc. PMT280ENEA.pdf Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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PMT560ENEAX PMT560ENEAX Nexperia USA Inc. PMT560ENEA.pdf Description: MOSFET N-CH 100V 1.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 715mOhm @ 1.1A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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NX3008NBKSH NX3008NBKSH Nexperia USA Inc. NX3008NBKS.pdf Description: MOSFET 2N-CH 30V 0.35A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 445mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMV50EPEAR PMV50EPEAR Nexperia USA Inc. PMV50EPEA.pdf Description: MOSFET P-CH 30V 4.2A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Power Dissipation (Max): 310mW (Ta), 455mW (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 793 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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PMV100XPEAR PMV100XPEAR Nexperia USA Inc. PMV100XPEA.pdf Description: MOSFET P-CH 20V 2.4A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 128mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 463mW (Ta), 1.9W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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3000+0.12 EUR
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PMV35EPER PMV35EPER Nexperia USA Inc. PMV35EPE.pdf Description: MOSFET P-CH 30V 5.3A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Power Dissipation (Max): 480mW (Ta), 1.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 793 pF @ 15 V
Produkt ist nicht verfügbar
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PMPB55ENEAX PMPB55ENEAX Nexperia USA Inc. PMPB55ENEA.pdf Description: MOSFET N-CH 60V 4A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 10A, 10V
Power Dissipation (Max): 1.65W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NX138AKR NX138AKR Nexperia USA Inc. NX138AK.pdf Description: MOSFET N-CH 60V 190MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 190mA, 10V
Power Dissipation (Max): 325mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V
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NX138AKSX NX138AKSX Nexperia USA Inc. NX138AKS.pdf Description: MOSFET 2N-CH 60V 0.17A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 325mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 170mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
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NX138BKSX NX138BKSX Nexperia USA Inc. NX138BKS.pdf Description: MOSFET 2N-CH 60V 0.21A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
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PMN40ENEX PMN40ENEX Nexperia USA Inc. PMN40ENE.pdf Description: MOSFET N-CH 30V 5.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
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PMPB23XNEZ PMPB23XNEZ Nexperia USA Inc. PMPB23XNE.pdf Description: MOSFET N-CH 20V 7A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1136 pF @ 10 V
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NX138BKWX NX138BKWX Nexperia USA Inc. NX138BKW.pdf Description: MOSFET N-CH 60V 210MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Power Dissipation (Max): 266mW (Ta), 1.33W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V
auf Bestellung 24000 Stücke:
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3000+0.06 EUR
6000+0.054 EUR
9000+0.051 EUR
15000+0.047 EUR
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PESD2ETH-XR PESD2ETH-XR Nexperia USA Inc. PESD2ETH-X.pdf Description: TVS DIODE 5.5VWM SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet
Capacitance @ Frequency: 16pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-143B
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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PTVS5V0Z1USKYL PTVS5V0Z1USKYL Nexperia USA Inc. PTVS5V0Z1USK.pdf Description: TVS DIODE 5VWM 12VC DSN1608-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
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PTVS15VZ1USKYL PTVS15VZ1USKYL Nexperia USA Inc. PTVS15VZ1USK.pdf Description: TVS DIODE 15VWM 27.4VC DSN1608-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 340pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 27.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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PTVS18VZ1USKYL PTVS18VZ1USKYL Nexperia USA Inc. PTVS18VZ1USK.pdf Description: TVS DIODE 18VWM 32.8VC DSN1608-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 290pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 32.8V
Power - Peak Pulse: 210W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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PTVS26VZ1USKYL PTVS26VZ1USKYL Nexperia USA Inc. PTVS26VZ1USK.pdf Description: TVS DIODE 26VWM 46VC DSN1608-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 215pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A
Voltage - Reverse Standoff (Typ): 26V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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PTVS20VZ1USKYL PTVS20VZ1USKYL Nexperia USA Inc. PTVS20VZ1USK.pdf Description: TVS DIODE 20VWM 36.9VC DSN1608-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 260pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A
Voltage - Reverse Standoff (Typ): 20V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 36.9V
Power - Peak Pulse: 220W
Power Line Protection: No
Part Status: Active
auf Bestellung 10000 Stücke:
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PESD5V0S1UAF PESD5V0S1UAF Nexperia USA Inc. PESD5V0S1UA.pdf Description: TVS DIODE 5VWM 19VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 480pF @ 1MHz
Current - Peak Pulse (10/1000µs): 47A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 890W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IP4220CZ6F IP4220CZ6F Nexperia USA Inc. IP4220CZ6.pdf Description: TVS DIODE 5.5VWM 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Power Line Protection: Yes
Part Status: Active
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BAT165AX BAT165AX Nexperia USA Inc. BAT165A.pdf Description: DIODE SCHOTTKY 40V 500MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 9pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Current - Reverse Leakage @ Vr: 8 µA @ 40 V
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BCP56F BCP56F Nexperia USA Inc. BCP56_SER.pdf Description: TRANS NPN 80V 1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 600 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BCP68F BCP68F Nexperia USA Inc. BCP68_SER.pdf Description: TRANS NPN 20V 2A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 650 mW
Grade: Automotive
Qualification: AEC-Q101
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BCP69-16F BCP69-16F Nexperia USA Inc. BCP69_BC869_BC69PA.pdf Description: TRANS PNP 20V 2A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 650 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PBSS4140DPNF PBSS4140DPNF Nexperia USA Inc. PBSS4140DPN.pdf Description: TRANS NPN/PNP 40V 1A 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 370mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V / 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: 6-TSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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PMEG100V060ELPDZ PMEG100V060ELPDZ Nexperia USA Inc. PMEG100V060ELPD.pdf Description: DIODE SCHOTTKY 100V 6A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8 ns
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 6 A
Current - Reverse Leakage @ Vr: 450 nA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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74ABT245PW,118 74ABT245PW,118 Nexperia USA Inc. 74ABT245.pdf Description: IC TXRX NON-INVERT 5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 2093 Stücke:
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74AVC4TD245GU,115 74AVC4TD245GU,115 Nexperia USA Inc. 74AVC4TD245.pdf Description: IC XLTR VL BIDIR 16-XQFN
Packaging: Cut Tape (CT)
Package / Case: 16-XFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 380Mbps
Supplier Device Package: 16-XQFN (1.8x2.6)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.8 V ~ 3.6 V
Voltage - VCCB: 0.8 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
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74AVCH4T245GU,115 74AVCH4T245GU,115 Nexperia USA Inc. 74AVCH4T245.pdf Description: IC TRANSLATION TXRX 3.6V 16-XQFN
Packaging: Cut Tape (CT)
Package / Case: 16-XFQFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Translation Transceiver
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Number of Bits per Element: 2
Current - Output High, Low: 12mA, 12mA
Supplier Device Package: 16-XQFN (1.8x2.6)
Part Status: Active
auf Bestellung 24853 Stücke:
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74HC138DB,118 74HC138DB,118 Nexperia USA Inc. 74HC_HCT138.pdf Description: IC DECODER/DEMUX 1 X 3:8 16-SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SSOP
Part Status: Obsolete
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74HC14PW-Q100,118 74HC14PW-Q100,118 Nexperia USA Inc. 74HC_HCT14_Q100.pdf Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Grade: Automotive
Qualification: AEC-Q100
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74HC175D,653 74HC175D,653 Nexperia USA Inc. 74HC_HCT175.pdf Description: IC FF D-TYPE SINGLE 4-BIT 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 89 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 16-SO
Max Propagation Delay @ V, Max CL: 30ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 4
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74HC245BQ,115 74HC245BQ,115 Nexperia USA Inc. 74HC_HCT245.pdf Description: IC TXRX NON-INVERT 6V 20-DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Active
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BUK9M17-30EX BUK9M17-30E.pdf
BUK9M17-30EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 37A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 25 V
Qualification: AEC-Q101
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BUK9M23-80EX BUK9M23-80E.pdf
BUK9M23-80EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 37A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 25 V
Qualification: AEC-Q101
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BUK9M24-60EX BUK9M24-60E.pdf
BUK9M24-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 32A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1469 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M34-100EX BUK9M34-100E.pdf
BUK9M34-100EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 29A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7831 Stücke:
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BUK9M35-80EX BUK9M35-80E.pdf
BUK9M35-80EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 26A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUK9M42-60EX BUK9M42-60E.pdf
BUK9M42-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 22A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 5A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3118 Stücke:
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BUK9M85-60EX BUK9M85-60E.pdf
BUK9M85-60EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 12.8A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2061 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
25+0.73 EUR
100+0.51 EUR
500+0.39 EUR
Mindestbestellmenge: 19
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BUK9M9R1-40EX BUK9M9R1-40E.pdf
BUK9M9R1-40EX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 64A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 20A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2048 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3194 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
18+1.03 EUR
100+0.8 EUR
500+0.68 EUR
Mindestbestellmenge: 17
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PSMN010-80YLX PSMN010-80YL.pdf
PSMN010-80YLX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 84A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6506 pF @ 25 V
auf Bestellung 4557 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
12+1.56 EUR
100+1.17 EUR
500+1 EUR
Mindestbestellmenge: 8
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PSMN013-60YLX PSMN013-60YL.pdf
PSMN013-60YLX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 53A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2603 pF @ 25 V
auf Bestellung 7452 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
18+1.03 EUR
100+0.75 EUR
500+0.64 EUR
Mindestbestellmenge: 14
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PSMN021-100YLX PSMN021-100YL.pdf
PSMN021-100YLX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 49A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 15A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4640 pF @ 25 V
auf Bestellung 4615 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.55 EUR
15+1.21 EUR
100+0.84 EUR
500+0.79 EUR
Mindestbestellmenge: 12
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PSMN025-80YLX PSMN025-80YL.pdf
PSMN025-80YLX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 37A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2703 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
19+0.98 EUR
100+0.71 EUR
500+0.58 EUR
Mindestbestellmenge: 13
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PSMN5R6-60YLX PSMN5R6-60YL.pdf
PSMN5R6-60YLX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5026 pF @ 25 V
auf Bestellung 5689 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.5 EUR
12+1.58 EUR
100+1.06 EUR
500+0.83 EUR
Mindestbestellmenge: 8
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PSMN7R5-60YLX PSMN7R5-60YL.pdf
PSMN7R5-60YLX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 86A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V
auf Bestellung 37913 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
15+1.19 EUR
100+0.9 EUR
500+0.88 EUR
Mindestbestellmenge: 11
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PMZ600UNELYL PMZ600UNEL.pdf
PMZ600UNELYL
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 600MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.058 EUR
Mindestbestellmenge: 10000
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PMZ950UPELYL PMZ950UPEL.pdf
PMZ950UPELYL
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 500MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.11 EUR
Mindestbestellmenge: 10000
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PMDXB600UNELZ PMDXB600UNEL.pdf
PMDXB600UNELZ
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 0.6A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.1 EUR
Mindestbestellmenge: 5000
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PMDXB950UPELZ PMDXB950UPEL.pdf
PMDXB950UPELZ
Hersteller: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 0.5A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.15 EUR
10000+0.14 EUR
15000+0.13 EUR
Mindestbestellmenge: 5000
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PMCXB900UELZ PMCXB900UEL.pdf
PMCXB900UELZ
Hersteller: Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 0.6A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
Produkt ist nicht verfügbar
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PMZ600UNELYL PMZ600UNEL.pdf
PMZ600UNELYL
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 600MA DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Power Dissipation (Max): 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 21.3 pF @ 10 V
auf Bestellung 33319 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
76+0.23 EUR
143+0.12 EUR
500+0.11 EUR
1000+0.099 EUR
2000+0.092 EUR
5000+0.086 EUR
Mindestbestellmenge: 50
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PMZ950UPELYL PMZ950UPEL.pdf
PMZ950UPELYL
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 500MA DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-883
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 10 V
auf Bestellung 19800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
51+0.35 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.15 EUR
2000+0.13 EUR
5000+0.11 EUR
Mindestbestellmenge: 31
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PMDXB600UNELZ PMDXB600UNEL.pdf
PMDXB600UNELZ
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 20V 0.6A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
auf Bestellung 6485 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
50+0.35 EUR
110+0.16 EUR
1000+0.14 EUR
2000+0.13 EUR
Mindestbestellmenge: 31
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PMDXB950UPELZ PMDXB950UPEL.pdf
PMDXB950UPELZ
Hersteller: Nexperia USA Inc.
Description: MOSFET 2P-CH 20V 0.5A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA
Input Capacitance (Ciss) (Max) @ Vds: 43pF @ 10V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
auf Bestellung 37983 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
39+0.46 EUR
100+0.28 EUR
500+0.25 EUR
1000+0.2 EUR
2000+0.19 EUR
Mindestbestellmenge: 28
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PMCXB900UELZ PMCXB900UEL.pdf
PMCXB900UELZ
Hersteller: Nexperia USA Inc.
Description: MOSFET N/P-CH 20V 0.6A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 380mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA
Input Capacitance (Ciss) (Max) @ Vds: 21.3pF @ 10V
Rds On (Max) @ Id, Vgs: 620mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: DFN1010B-6
Part Status: Active
auf Bestellung 2717 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
32+0.56 EUR
100+0.35 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.21 EUR
Mindestbestellmenge: 20
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PESD24VF1BSFYL PESD24VF1BSF.pdf
PESD24VF1BSFYL
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 24VWM 17VC DSN0603-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.5V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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BAT54XYH BAT54XY.pdf
BAT54XYH
Hersteller: Nexperia USA Inc.
Description: DIODE ARR SCHOT 30V 200MA 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: 6-TSSOP
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.086 EUR
6000+0.083 EUR
9000+0.078 EUR
Mindestbestellmenge: 3000
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PMT280ENEAX PMT280ENEA.pdf
PMT280ENEAX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.24 EUR
2000+0.23 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
PMT560ENEAX PMT560ENEA.pdf
PMT560ENEAX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 1.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 715mOhm @ 1.1A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 112 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NX3008NBKSH NX3008NBKS.pdf
NX3008NBKSH
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 0.35A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 445mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMV50EPEAR PMV50EPEA.pdf
PMV50EPEAR
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 4.2A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Power Dissipation (Max): 310mW (Ta), 455mW (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 793 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
Mindestbestellmenge: 3000
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PMV100XPEAR PMV100XPEA.pdf
PMV100XPEAR
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.4A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 128mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 463mW (Ta), 1.9W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
Mindestbestellmenge: 3000
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PMV35EPER PMV35EPE.pdf
PMV35EPER
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 5.3A TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Power Dissipation (Max): 480mW (Ta), 1.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 793 pF @ 15 V
Produkt ist nicht verfügbar
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PMPB55ENEAX PMPB55ENEA.pdf
PMPB55ENEAX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 4A DFN2020MD-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 10A, 10V
Power Dissipation (Max): 1.65W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NX138AKR NX138AK.pdf
NX138AKR
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 190MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 190mA, 10V
Power Dissipation (Max): 325mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.03 EUR
6000+0.028 EUR
9000+0.027 EUR
15000+0.026 EUR
Mindestbestellmenge: 3000
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NX138AKSX NX138AKS.pdf
NX138AKSX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 0.17A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 325mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 170mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.1 EUR
Mindestbestellmenge: 3000
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NX138BKSX NX138BKS.pdf
NX138BKSX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 0.21A 6TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.099 EUR
6000+0.091 EUR
9000+0.08 EUR
Mindestbestellmenge: 3000
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PMN40ENEX PMN40ENE.pdf
PMN40ENEX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 5.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
Mindestbestellmenge: 3000
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PMPB23XNEZ PMPB23XNE.pdf
PMPB23XNEZ
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 7A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1136 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.2 EUR
Mindestbestellmenge: 3000
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NX138BKWX NX138BKW.pdf
NX138BKWX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 210MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Power Dissipation (Max): 266mW (Ta), 1.33W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
6000+0.054 EUR
9000+0.051 EUR
15000+0.047 EUR
21000+0.045 EUR
Mindestbestellmenge: 3000
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PESD2ETH-XR PESD2ETH-X.pdf
PESD2ETH-XR
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM SOT143B
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet
Capacitance @ Frequency: 16pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-143B
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PTVS5V0Z1USKYL PTVS5V0Z1USK.pdf
PTVS5V0Z1USKYL
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM 12VC DSN1608-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.079 EUR
Mindestbestellmenge: 10000
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PTVS15VZ1USKYL PTVS15VZ1USK.pdf
PTVS15VZ1USKYL
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 15VWM 27.4VC DSN1608-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 340pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 27.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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PTVS18VZ1USKYL PTVS18VZ1USK.pdf
PTVS18VZ1USKYL
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 18VWM 32.8VC DSN1608-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 290pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 32.8V
Power - Peak Pulse: 210W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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PTVS26VZ1USKYL PTVS26VZ1USK.pdf
PTVS26VZ1USKYL
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 26VWM 46VC DSN1608-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 215pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A
Voltage - Reverse Standoff (Typ): 26V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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PTVS20VZ1USKYL PTVS20VZ1USK.pdf
PTVS20VZ1USKYL
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 20VWM 36.9VC DSN1608-2
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 260pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A
Voltage - Reverse Standoff (Typ): 20V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 36.9V
Power - Peak Pulse: 220W
Power Line Protection: No
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.079 EUR
Mindestbestellmenge: 10000
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PESD5V0S1UAF PESD5V0S1UA.pdf
PESD5V0S1UAF
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM 19VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 480pF @ 1MHz
Current - Peak Pulse (10/1000µs): 47A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 890W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IP4220CZ6F IP4220CZ6.pdf
IP4220CZ6F
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Power Line Protection: Yes
Part Status: Active
auf Bestellung 110000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.16 EUR
Mindestbestellmenge: 10000
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BAT165AX BAT165A.pdf
BAT165AX
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 500MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 9pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Current - Reverse Leakage @ Vr: 8 µA @ 40 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.064 EUR
6000+0.059 EUR
9000+0.058 EUR
15000+0.057 EUR
Mindestbestellmenge: 3000
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BCP56F BCP56_SER.pdf
BCP56F
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 80V 1A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 155MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 600 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BCP68F BCP68_SER.pdf
BCP68F
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 20V 2A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 170MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 650 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.16 EUR
Mindestbestellmenge: 4000
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BCP69-16F BCP69_BC869_BC69PA.pdf
BCP69-16F
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 20V 2A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 1V
Frequency - Transition: 140MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 650 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PBSS4140DPNF PBSS4140DPN.pdf
PBSS4140DPNF
Hersteller: Nexperia USA Inc.
Description: TRANS NPN/PNP 40V 1A 6-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 370mW
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V / 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: 6-TSOP
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.17 EUR
20000+0.16 EUR
30000+0.15 EUR
Mindestbestellmenge: 10000
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PMEG100V060ELPDZ PMEG100V060ELPD.pdf
PMEG100V060ELPDZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 6A CFP15
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8 ns
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 6 A
Current - Reverse Leakage @ Vr: 450 nA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.36 EUR
3000+0.33 EUR
4500+0.31 EUR
Mindestbestellmenge: 1500
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74ABT245PW,118 74ABT245.pdf
74ABT245PW,118
Hersteller: Nexperia USA Inc.
Description: IC TXRX NON-INVERT 5.5V 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 2093 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
25+0.71 EUR
28+0.64 EUR
100+0.56 EUR
250+0.52 EUR
500+0.5 EUR
1000+0.49 EUR
Mindestbestellmenge: 18
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74AVC4TD245GU,115 74AVC4TD245.pdf
74AVC4TD245GU,115
Hersteller: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 16-XQFN
Packaging: Cut Tape (CT)
Package / Case: 16-XFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 380Mbps
Supplier Device Package: 16-XQFN (1.8x2.6)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.8 V ~ 3.6 V
Voltage - VCCB: 0.8 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
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74AVCH4T245GU,115 74AVCH4T245.pdf
74AVCH4T245GU,115
Hersteller: Nexperia USA Inc.
Description: IC TRANSLATION TXRX 3.6V 16-XQFN
Packaging: Cut Tape (CT)
Package / Case: 16-XFQFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Translation Transceiver
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Number of Bits per Element: 2
Current - Output High, Low: 12mA, 12mA
Supplier Device Package: 16-XQFN (1.8x2.6)
Part Status: Active
auf Bestellung 24853 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.58 EUR
16+1.14 EUR
25+1.03 EUR
100+0.91 EUR
250+0.85 EUR
500+0.82 EUR
1000+0.79 EUR
Mindestbestellmenge: 12
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74HC138DB,118 74HC_HCT138.pdf
74HC138DB,118
Hersteller: Nexperia USA Inc.
Description: IC DECODER/DEMUX 1 X 3:8 16-SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SSOP
Part Status: Obsolete
auf Bestellung 13 Stücke:
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74HC14PW-Q100,118 74HC_HCT14_Q100.pdf
74HC14PW-Q100,118
Hersteller: Nexperia USA Inc.
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 3161 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
60+0.29 EUR
68+0.26 EUR
100+0.22 EUR
250+0.21 EUR
500+0.2 EUR
1000+0.19 EUR
Mindestbestellmenge: 42
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74HC175D,653 74HC_HCT175.pdf
74HC175D,653
Hersteller: Nexperia USA Inc.
Description: IC FF D-TYPE SINGLE 4-BIT 16-SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 89 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 16-SO
Max Propagation Delay @ V, Max CL: 30ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 4
auf Bestellung 4645 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
38+0.47 EUR
43+0.42 EUR
100+0.36 EUR
250+0.34 EUR
500+0.32 EUR
1000+0.31 EUR
Mindestbestellmenge: 26
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74HC245BQ,115 74HC_HCT245.pdf
74HC245BQ,115
Hersteller: Nexperia USA Inc.
Description: IC TXRX NON-INVERT 6V 20-DHVQFN
Packaging: Cut Tape (CT)
Package / Case: 20-VFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-DHVQFN (4.5x2.5)
Part Status: Active
auf Bestellung 3280 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
40+0.45 EUR
44+0.4 EUR
100+0.35 EUR
250+0.32 EUR
500+0.31 EUR
1000+0.29 EUR
Mindestbestellmenge: 28
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