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NX138BKR NX138BKR Nexperia USA Inc. NX138BK.pdf Description: MOSFET N-CH 60V 265MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V
auf Bestellung 14263 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
124+0.14 EUR
202+0.087 EUR
500+0.063 EUR
1000+0.055 EUR
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NX7002BKR NX7002BKR Nexperia USA Inc. NX7002BK.pdf Description: MOSFET N-CH 60V 270MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
auf Bestellung 86520 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
110+0.16 EUR
178+0.099 EUR
500+0.072 EUR
1000+0.063 EUR
Mindestbestellmenge: 67
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NX7002BKSX NX7002BKSX Nexperia USA Inc. NX7002BKS.pdf Description: MOSFET N-CH 60V 270MA 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
auf Bestellung 6755 Stücke:
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48+0.37 EUR
79+0.23 EUR
127+0.14 EUR
500+0.1 EUR
1000+0.09 EUR
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NX7002BKWX NX7002BKWX Nexperia USA Inc. NX7002BKW.pdf Description: MOSFET N-CH 60V 270MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
auf Bestellung 39675 Stücke:
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63+0.28 EUR
107+0.17 EUR
217+0.081 EUR
500+0.079 EUR
1000+0.071 EUR
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PBHV8515QAZ PBHV8515QAZ Nexperia USA Inc. PBHV8515QA.pdf Description: TRANS NPN 150V 0.5A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 60mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 10V
Frequency - Transition: 75MHz
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 325 mW
Qualification: AEC-Q101
auf Bestellung 4269 Stücke:
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18+1 EUR
29+0.61 EUR
100+0.39 EUR
500+0.3 EUR
1000+0.27 EUR
2000+0.24 EUR
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PBSS4160DSH PBSS4160DSH Nexperia USA Inc. PBSS4160DS.pdf Description: TRANS 2NPN 60V 870MA 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 290mW
Current - Collector (Ic) (Max): 870mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 8316 Stücke:
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18+1 EUR
29+0.63 EUR
50+0.46 EUR
100+0.4 EUR
Mindestbestellmenge: 18
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PEMZ7,115 PEMZ7,115 Nexperia USA Inc. PEMZ7.pdf Description: TRANS NPN/PNP 12V 500MA SOT-666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 420MHz, 280MHz
Supplier Device Package: SOT-666
Part Status: Not For New Designs
auf Bestellung 4684 Stücke:
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25+0.72 EUR
41+0.43 EUR
100+0.27 EUR
500+0.21 EUR
1000+0.18 EUR
2000+0.16 EUR
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PESD2ETH-AXR PESD2ETH-AXR Nexperia USA Inc. PESD2ETH-AX.pdf Description: TVS DIODE 5.5VWM SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet
Capacitance @ Frequency: 16pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-143B
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 19735 Stücke:
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22+0.83 EUR
31+0.57 EUR
100+0.41 EUR
500+0.32 EUR
1000+0.29 EUR
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PESD2IVN-UX PESD2IVN-UX Nexperia USA Inc. PESD2IVN-U.pdf Description: TVS DIODE 26.5VWM 53VC SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: CAN
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 53V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
auf Bestellung 11183 Stücke:
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36+0.49 EUR
53+0.33 EUR
110+0.16 EUR
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PESD3V3C1BSFYL PESD3V3C1BSFYL Nexperia USA Inc. PESD3V3C1BSF.pdf Description: TVS DIODE 3.3VWM 5.5VC DSN0603-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5.5V
Power Line Protection: No
Part Status: Active
auf Bestellung 29599 Stücke:
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42+0.42 EUR
87+0.2 EUR
178+0.099 EUR
500+0.086 EUR
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PESD3V3X1BCSFYL PESD3V3X1BCSFYL Nexperia USA Inc. PESD3V3X1BCSF.pdf Description: TVS DIODE 3.3VWM 5.5VC DSN0603-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5.5V
Power Line Protection: No
Part Status: Active
auf Bestellung 1273 Stücke:
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112+0.16 EUR
193+0.092 EUR
356+0.049 EUR
Mindestbestellmenge: 112
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PESD5V0H1BSFYL PESD5V0H1BSFYL Nexperia USA Inc. PESD5V0H1BSF.pdf Description: TVS DIODE 5VWM 5VC DSN0603-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5V
Power Line Protection: No
Part Status: Active
auf Bestellung 2658 Stücke:
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24+0.74 EUR
39+0.46 EUR
54+0.33 EUR
100+0.29 EUR
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PESD5V0V2BMYL PESD5V0V2BMYL Nexperia USA Inc. PESD5V0V2BM.pdf Description: TVS DIODE 5VWM 12.5VC SOT883
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-883
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 20535 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.37 EUR
92+0.19 EUR
198+0.089 EUR
500+0.086 EUR
1000+0.085 EUR
Mindestbestellmenge: 48
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PESD5V0X1BCSFYL PESD5V0X1BCSFYL Nexperia USA Inc. PESD5V0X1BCSF.pdf Description: TVS DIODE 5VWM 5.5VC DSN0603-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5.5V
Power Line Protection: No
Part Status: Active
auf Bestellung 9664 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.4 EUR
70+0.25 EUR
98+0.18 EUR
113+0.16 EUR
Mindestbestellmenge: 44
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PMBT2222AYSX PMBT2222AYSX Nexperia USA Inc. PMBT2222AYS.pdf Description: TRANS 2NPN 40V 600MA 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 550mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
auf Bestellung 4081 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
53+0.34 EUR
73+0.24 EUR
100+0.21 EUR
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PMBT2907AYSX PMBT2907AYSX Nexperia USA Inc. PMBT2907AYS.pdf Description: TRANS 2PNP 60V 600MA 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 550mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Qualification: AEC-Q101
auf Bestellung 5100 Stücke:
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39+0.46 EUR
65+0.27 EUR
90+0.2 EUR
103+0.17 EUR
Mindestbestellmenge: 39
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PMBT3904MB,315 PMBT3904MB,315 Nexperia USA Inc. PMBT3904MB.pdf Description: TRANS NPN 40V 0.2A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: DFN1006B-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMBT4401YSX PMBT4401YSX Nexperia USA Inc. PMBT4401YS.pdf Description: TRANS NPN 40V 0.6A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
auf Bestellung 3825 Stücke:
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35+0.51 EUR
57+0.31 EUR
80+0.22 EUR
100+0.19 EUR
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PMBT4403,235 PMBT4403,235 Nexperia USA Inc. PMBT4403.pdf Description: TRANS PNP 40V 0.6A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
auf Bestellung 32880 Stücke:
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84+0.21 EUR
134+0.13 EUR
219+0.081 EUR
500+0.058 EUR
1000+0.051 EUR
2000+0.045 EUR
5000+0.038 EUR
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PMCM4401VNEAZ PMCM4401VNEAZ Nexperia USA Inc. PMCM4401VNE.pdf Description: MOSFET N-CH 12V 4.7A 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V
auf Bestellung 85820 Stücke:
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21+0.86 EUR
31+0.58 EUR
100+0.28 EUR
500+0.26 EUR
1000+0.22 EUR
2000+0.21 EUR
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PMCM4401VPEZ PMCM4401VPEZ Nexperia USA Inc. PMCM4401VPE.pdf Description: MOSFET P-CH 12V 3.9A 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 6 V
auf Bestellung 7481 Stücke:
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25+0.7 EUR
34+0.53 EUR
100+0.34 EUR
500+0.24 EUR
1000+0.21 EUR
2000+0.2 EUR
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PMDPB56XNEAX PMDPB56XNEAX Nexperia USA Inc. PMDPB56XNEA.pdf Description: MOSFET 2N-CH 30V 3.1A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 485mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 15V
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: DFN2020D-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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PMEG100V080ELPDZ PMEG100V080ELPDZ Nexperia USA Inc. PMEG100V080ELPD.pdf Description: DIODE SCHOTTKY 100V 8A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 10V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
Qualification: AEC-Q101
auf Bestellung 14057 Stücke:
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PMF250XNEX PMF250XNEX Nexperia USA Inc. PMF250XNE.pdf Description: MOSFET N-CH 30V 1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 254mOhm @ 900mA, 4.5V
Power Dissipation (Max): 342mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 15 V
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PMF63UNEX PMF63UNEX Nexperia USA Inc. PMF63UNE.pdf Description: MOSFET N-CH 20V 2.2A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2A, 4.5V
Power Dissipation (Max): 395mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.85 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 10 V
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PMGD175XNEX PMGD175XNEX Nexperia USA Inc. PMGD175XNE.pdf Description: MOSFET 2N-CH 30V 0.87A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 260mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 81pF @ 15V
Rds On (Max) @ Id, Vgs: 252mOhm @ 900mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.65nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
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PMN16XNEX PMN16XNEX Nexperia USA Inc. PMN16XNE.pdf Description: MOSFET N-CH 20V 6.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 6.9A, 4.5V
Power Dissipation (Max): 550mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1136 pF @ 10 V
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PMN30UNEX PMN30UNEX Nexperia USA Inc. PMN30UNE.pdf Description: MOSFET N-CH 20V 4.8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 558 pF @ 10 V
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PMN30UNX PMN30UNX Nexperia USA Inc. PMN30UN.pdf Description: MOSFET N-CH 30V 4.5A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 15 V
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PMN30XPX PMN30XPX Nexperia USA Inc. PMN30XP.pdf Description: MOSFET P-CH 20V 5.2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 550mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
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PMN52XPX PMN52XPX Nexperia USA Inc. PMN52XP.pdf Description: MOSFET P-CH 20V 3.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 10 V
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PMPB10XNEZ PMPB10XNEZ Nexperia USA Inc. PMPB10XNE.pdf Description: MOSFET N-CH 20V 9A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 10 V
auf Bestellung 11528 Stücke:
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PMPB12UNEX PMPB12UNEX Nexperia USA Inc. PMPB12UNE.pdf Description: MOSFET N-CH 20V 11.4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7.9A, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
auf Bestellung 2617 Stücke:
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PMPB20XNEAX PMPB20XNEAX Nexperia USA Inc. PMPB20XNEA.pdf Description: MOSFET N-CH 20V 7.5A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 460mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Qualification: AEC-Q101
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PMPB95ENEAX PMPB95ENEAX Nexperia USA Inc. PMPB95ENEA.pdf Description: MOSFET N-CH 80V 2.8A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 256 Stücke:
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PMV42ENER PMV42ENER Nexperia USA Inc. PMV42ENE.pdf Description: MOSFET N-CH 30V 4.4A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.4A, 10V
Power Dissipation (Max): 500mW (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 15 V
auf Bestellung 6143 Stücke:
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PMV65UNER PMV65UNER Nexperia USA Inc. PMV65UNE.pdf Description: MOSFET N-CH 20V 2.8A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 10 V
auf Bestellung 7186 Stücke:
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PQMB11Z PQMB11Z Nexperia USA Inc. PQMB11.pdf Description: TRANS PREBIAS 2PNP DFN1010B-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 180MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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PQMD13Z PQMD13Z Nexperia USA Inc. PQMD13.pdf Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 350mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 230MHz, 180MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Qualification: AEC-Q101
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PQMH11Z PQMH11Z Nexperia USA Inc. PQMH11.pdf Description: TRANS PREBIAS 2NPN DFN1010B-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: DFN1010B-6
Part Status: Active
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PQMH13Z PQMH13Z Nexperia USA Inc. PQMH13.pdf Description: TRANS PREBIAS 2NPN DFN1010B-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PZU12B2A,115 PZU12B2A,115 Nexperia USA Inc. PZUXBA_SER.pdf Description: DIODE ZENER 12V 320MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 320 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
auf Bestellung 1912 Stücke:
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44+0.4 EUR
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99+0.18 EUR
114+0.15 EUR
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TDZ7V5J,115 TDZ7V5J,115 Nexperia USA Inc. TDZXJ_SER.pdf Description: DIODE ZENER 7.5V 500MW SOD323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
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63+0.28 EUR
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204+0.087 EUR
500+0.085 EUR
1000+0.082 EUR
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PMT280ENEAX PMT280ENEAX Nexperia USA Inc. PMT280ENEA.pdf Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V
Qualification: AEC-Q101
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NX3008NBKSH NX3008NBKSH Nexperia USA Inc. NX3008NBKS.pdf Description: MOSFET 2N-CH 30V 0.35A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 445mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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PMV100XPEAR PMV100XPEAR Nexperia USA Inc. PMV100XPEA.pdf Description: MOSFET P-CH 20V 2.4A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 128mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 463mW (Ta), 1.9W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5389 Stücke:
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PMV35EPER PMV35EPER Nexperia USA Inc. PMV35EPE.pdf Description: MOSFET P-CH 30V 5.3A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Power Dissipation (Max): 480mW (Ta), 1.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 793 pF @ 15 V
auf Bestellung 2947 Stücke:
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PMPB55ENEAX PMPB55ENEAX Nexperia USA Inc. PMPB55ENEA.pdf Description: MOSFET N-CH 60V 4A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 10A, 10V
Power Dissipation (Max): 1.65W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3039 Stücke:
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NX138AKR NX138AKR Nexperia USA Inc. NX138AK.pdf Description: MOSFET N-CH 60V 190MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 190mA, 10V
Power Dissipation (Max): 325mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V
auf Bestellung 18032 Stücke:
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NX138AKSX NX138AKSX Nexperia USA Inc. NX138AKS.pdf Description: MOSFET 2N-CH 60V 0.17A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 325mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 170mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
auf Bestellung 5355 Stücke:
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500+0.14 EUR
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PMN40ENEX PMN40ENEX Nexperia USA Inc. PMN40ENE.pdf Description: MOSFET N-CH 30V 5.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
auf Bestellung 4955 Stücke:
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NX138BKWX NX138BKWX Nexperia USA Inc. NX138BKW.pdf Description: MOSFET N-CH 60V 210MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Power Dissipation (Max): 266mW (Ta), 1.33W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V
auf Bestellung 24939 Stücke:
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PTVS5V0Z1USKYL PTVS5V0Z1USKYL Nexperia USA Inc. PTVS5V0Z1USK.pdf Description: TVS DIODE 5VWM 12VC DSN1608-2
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
auf Bestellung 27316 Stücke:
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PTVS15VZ1USKYL PTVS15VZ1USKYL Nexperia USA Inc. PTVS15VZ1USK.pdf Description: TVS DIODE 15VWM 27.4VC DSN1608-2
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 340pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 27.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
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PTVS18VZ1USKYL PTVS18VZ1USKYL Nexperia USA Inc. PTVS18VZ1USK.pdf Description: TVS DIODE 18VWM 32.8VC DSN1608-2
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 290pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 32.8V
Power - Peak Pulse: 210W
Power Line Protection: No
Part Status: Active
auf Bestellung 8744 Stücke:
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PTVS26VZ1USKYL PTVS26VZ1USKYL Nexperia USA Inc. PTVS26VZ1USK.pdf Description: TVS DIODE 26VWM 46VC DSN1608-2
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 215pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A
Voltage - Reverse Standoff (Typ): 26V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
auf Bestellung 11125 Stücke:
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PTVS20VZ1USKYL PTVS20VZ1USKYL Nexperia USA Inc. PTVS20VZ1USK.pdf Description: TVS DIODE 20VWM 36.9VC DSN1608-2
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 260pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A
Voltage - Reverse Standoff (Typ): 20V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 36.9V
Power - Peak Pulse: 220W
Power Line Protection: No
Part Status: Active
auf Bestellung 26318 Stücke:
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PESD5V0S1UAF PESD5V0S1UAF Nexperia USA Inc. PESD5V0S1UA.pdf Description: TVS DIODE 5VWM 19VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 480pF @ 1MHz
Current - Peak Pulse (10/1000µs): 47A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 890W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 7431 Stücke:
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IP4220CZ6F IP4220CZ6F Nexperia USA Inc. IP4220CZ6.pdf Description: TVS DIODE 5.5VWM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Power Line Protection: Yes
Part Status: Active
auf Bestellung 73704 Stücke:
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BAT165AX BAT165AX Nexperia USA Inc. BAT165A.pdf Description: DIODE SCHOTTKY 40V 500MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 9pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Current - Reverse Leakage @ Vr: 8 µA @ 40 V
auf Bestellung 61892 Stücke:
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NX138BKR NX138BK.pdf
NX138BKR
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 265MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 265mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20.2 pF @ 30 V
auf Bestellung 14263 Stücke:
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Anzahl Preis
77+0.23 EUR
124+0.14 EUR
202+0.087 EUR
500+0.063 EUR
1000+0.055 EUR
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NX7002BKR NX7002BK.pdf
NX7002BKR
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 270MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
auf Bestellung 86520 Stücke:
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Anzahl Preis
67+0.26 EUR
110+0.16 EUR
178+0.099 EUR
500+0.072 EUR
1000+0.063 EUR
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NX7002BKSX NX7002BKS.pdf
NX7002BKSX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 270MA 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
auf Bestellung 6755 Stücke:
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Anzahl Preis
48+0.37 EUR
79+0.23 EUR
127+0.14 EUR
500+0.1 EUR
1000+0.09 EUR
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NX7002BKWX NX7002BKW.pdf
NX7002BKWX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 270MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Power Dissipation (Max): 310mW (Ta), 1.67W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.6 pF @ 10 V
auf Bestellung 39675 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
107+0.17 EUR
217+0.081 EUR
500+0.079 EUR
1000+0.071 EUR
Mindestbestellmenge: 63
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PBHV8515QAZ PBHV8515QA.pdf
PBHV8515QAZ
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 150V 0.5A DFN1010D-3
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 60mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 200mA, 10V
Frequency - Transition: 75MHz
Supplier Device Package: DFN1010D-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 325 mW
Qualification: AEC-Q101
auf Bestellung 4269 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
29+0.61 EUR
100+0.39 EUR
500+0.3 EUR
1000+0.27 EUR
2000+0.24 EUR
Mindestbestellmenge: 18
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PBSS4160DSH PBSS4160DS.pdf
PBSS4160DSH
Hersteller: Nexperia USA Inc.
Description: TRANS 2NPN 60V 870MA 6-TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 290mW
Current - Collector (Ic) (Max): 870mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: 6-TSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 8316 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
29+0.63 EUR
50+0.46 EUR
100+0.4 EUR
Mindestbestellmenge: 18
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PEMZ7,115 PEMZ7.pdf
PEMZ7,115
Hersteller: Nexperia USA Inc.
Description: TRANS NPN/PNP 12V 500MA SOT-666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Vce Saturation (Max) @ Ib, Ic: 220mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
Frequency - Transition: 420MHz, 280MHz
Supplier Device Package: SOT-666
Part Status: Not For New Designs
auf Bestellung 4684 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
41+0.43 EUR
100+0.27 EUR
500+0.21 EUR
1000+0.18 EUR
2000+0.16 EUR
Mindestbestellmenge: 25
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PESD2ETH-AXR PESD2ETH-AX.pdf
PESD2ETH-AXR
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM SOT143B
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Ethernet
Capacitance @ Frequency: 16pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-143B
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 19735 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
31+0.57 EUR
100+0.41 EUR
500+0.32 EUR
1000+0.29 EUR
Mindestbestellmenge: 22
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PESD2IVN-UX PESD2IVN-U.pdf
PESD2IVN-UX
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 26.5VWM 53VC SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Applications: CAN
Capacitance @ Frequency: 8.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 26.5V (Max)
Supplier Device Package: SOT-323
Bidirectional Channels: 2
Voltage - Breakdown (Min): 28V
Voltage - Clamping (Max) @ Ipp: 53V
Power - Peak Pulse: 150W
Power Line Protection: No
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q101
auf Bestellung 11183 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
53+0.33 EUR
110+0.16 EUR
Mindestbestellmenge: 36
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PESD3V3C1BSFYL PESD3V3C1BSF.pdf
PESD3V3C1BSFYL
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 3.3VWM 5.5VC DSN0603-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5.5V
Power Line Protection: No
Part Status: Active
auf Bestellung 29599 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
87+0.2 EUR
178+0.099 EUR
500+0.086 EUR
Mindestbestellmenge: 42
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PESD3V3X1BCSFYL PESD3V3X1BCSF.pdf
PESD3V3X1BCSFYL
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 3.3VWM 5.5VC DSN0603-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5.5V
Power Line Protection: No
Part Status: Active
auf Bestellung 1273 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
193+0.092 EUR
356+0.049 EUR
Mindestbestellmenge: 112
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PESD5V0H1BSFYL PESD5V0H1BSF.pdf
PESD5V0H1BSFYL
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM 5VC DSN0603-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5V
Power Line Protection: No
Part Status: Active
auf Bestellung 2658 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
39+0.46 EUR
54+0.33 EUR
100+0.29 EUR
Mindestbestellmenge: 24
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PESD5V0V2BMYL PESD5V0V2BM.pdf
PESD5V0V2BMYL
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM 12.5VC SOT883
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 18pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-883
Bidirectional Channels: 2
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 20535 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
92+0.19 EUR
198+0.089 EUR
500+0.086 EUR
1000+0.085 EUR
Mindestbestellmenge: 48
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PESD5V0X1BCSFYL PESD5V0X1BCSF.pdf
PESD5V0X1BCSFYL
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM 5.5VC DSN0603-2
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DSN0603-2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 5.5V
Power Line Protection: No
Part Status: Active
auf Bestellung 9664 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
70+0.25 EUR
98+0.18 EUR
113+0.16 EUR
Mindestbestellmenge: 44
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PMBT2222AYSX PMBT2222AYS.pdf
PMBT2222AYSX
Hersteller: Nexperia USA Inc.
Description: TRANS 2NPN 40V 600MA 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 550mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 10V
Frequency - Transition: 300MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
auf Bestellung 4081 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
53+0.34 EUR
73+0.24 EUR
100+0.21 EUR
Mindestbestellmenge: 32
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PMBT2907AYSX PMBT2907AYS.pdf
PMBT2907AYSX
Hersteller: Nexperia USA Inc.
Description: TRANS 2PNP 60V 600MA 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 550mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Qualification: AEC-Q101
auf Bestellung 5100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
65+0.27 EUR
90+0.2 EUR
103+0.17 EUR
Mindestbestellmenge: 39
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PMBT3904MB,315 PMBT3904MB.pdf
PMBT3904MB,315
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 40V 0.2A DFN1006B-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: DFN1006B-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMBT4401YSX PMBT4401YS.pdf
PMBT4401YSX
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 40V 0.6A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
auf Bestellung 3825 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
57+0.31 EUR
80+0.22 EUR
100+0.19 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
PMBT4403,235 PMBT4403.pdf
PMBT4403,235
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 40V 0.6A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 250 mW
Qualification: AEC-Q101
auf Bestellung 32880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
134+0.13 EUR
219+0.081 EUR
500+0.058 EUR
1000+0.051 EUR
2000+0.045 EUR
5000+0.038 EUR
Mindestbestellmenge: 84
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PMCM4401VNEAZ PMCM4401VNE.pdf
PMCM4401VNEAZ
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 12V 4.7A 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 6 V
auf Bestellung 85820 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
31+0.58 EUR
100+0.28 EUR
500+0.26 EUR
1000+0.22 EUR
2000+0.21 EUR
Mindestbestellmenge: 21
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PMCM4401VPEZ PMCM4401VPE.pdf
PMCM4401VPEZ
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 12V 3.9A 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
Power Dissipation (Max): 400mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 4-WLCSP (0.78x0.78)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 6 V
auf Bestellung 7481 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
34+0.53 EUR
100+0.34 EUR
500+0.24 EUR
1000+0.21 EUR
2000+0.2 EUR
Mindestbestellmenge: 25
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PMDPB56XNEAX PMDPB56XNEA.pdf
PMDPB56XNEAX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 3.1A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 485mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 256pF @ 15V
Rds On (Max) @ Id, Vgs: 72mOhm @ 3.1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: DFN2020D-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 16558 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
24+0.74 EUR
100+0.48 EUR
500+0.36 EUR
1000+0.33 EUR
Mindestbestellmenge: 15
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PMEG100V080ELPDZ PMEG100V080ELPD.pdf
PMEG100V080ELPDZ
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 8A CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 10V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: CFP15
Operating Temperature - Junction: 175°C (Max)
Grade: Automotive
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
Qualification: AEC-Q101
auf Bestellung 14057 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
30+0.59 EUR
100+0.56 EUR
500+0.41 EUR
Mindestbestellmenge: 20
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PMF250XNEX PMF250XNE.pdf
PMF250XNEX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 254mOhm @ 900mA, 4.5V
Power Dissipation (Max): 342mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.65 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 81 pF @ 15 V
auf Bestellung 3083 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
55+0.32 EUR
77+0.23 EUR
100+0.2 EUR
Mindestbestellmenge: 34
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PMF63UNEX PMF63UNE.pdf
PMF63UNEX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 2.2A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 2A, 4.5V
Power Dissipation (Max): 395mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.85 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 289 pF @ 10 V
auf Bestellung 202754 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
34+0.52 EUR
50+0.38 EUR
100+0.33 EUR
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PMGD175XNEX PMGD175XNE.pdf
PMGD175XNEX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 0.87A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 260mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 870mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 81pF @ 15V
Rds On (Max) @ Id, Vgs: 252mOhm @ 900mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.65nC @ 4.5V
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
auf Bestellung 10567 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
33+0.54 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.22 EUR
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PMN16XNEX PMN16XNE.pdf
PMN16XNEX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 6.9A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 6.9A, 4.5V
Power Dissipation (Max): 550mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1136 pF @ 10 V
auf Bestellung 10699 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
31+0.58 EUR
50+0.42 EUR
100+0.37 EUR
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PMN30UNEX PMN30UNE.pdf
PMN30UNEX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 4.8A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 558 pF @ 10 V
auf Bestellung 2839 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
44+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
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PMN30UNX PMN30UN.pdf
PMN30UNX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 4.5A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 15 V
auf Bestellung 3617 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
41+0.43 EUR
100+0.21 EUR
500+0.2 EUR
1000+0.17 EUR
Mindestbestellmenge: 25
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PMN30XPX PMN30XP.pdf
PMN30XPX
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 5.2A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 550mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V
auf Bestellung 2251 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
25+0.71 EUR
50+0.51 EUR
100+0.45 EUR
Mindestbestellmenge: 16
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PMN52XPX PMN52XP.pdf
PMN52XPX
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 3.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 10 V
auf Bestellung 5288 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
35+0.51 EUR
100+0.26 EUR
500+0.24 EUR
1000+0.22 EUR
Mindestbestellmenge: 23
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PMPB10XNEZ PMPB10XNE.pdf
PMPB10XNEZ
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 9A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2175 pF @ 10 V
auf Bestellung 11528 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
21+0.88 EUR
50+0.64 EUR
100+0.56 EUR
Mindestbestellmenge: 13
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PMPB12UNEX PMPB12UNE.pdf
PMPB12UNEX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 11.4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 7.9A, 4.5V
Power Dissipation (Max): 470mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 10 V
auf Bestellung 2617 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
24+0.76 EUR
50+0.55 EUR
100+0.48 EUR
Mindestbestellmenge: 15
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PMPB20XNEAX PMPB20XNEA.pdf
PMPB20XNEAX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 7.5A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 460mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PMPB95ENEAX PMPB95ENEA.pdf
PMPB95ENEAX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 2.8A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.8A, 10V
Power Dissipation (Max): 1.6W (Ta), 15.6W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 504 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 256 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.34 EUR
22+0.83 EUR
50+0.61 EUR
100+0.53 EUR
Mindestbestellmenge: 14
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PMV42ENER PMV42ENE.pdf
PMV42ENER
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 4.4A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.4A, 10V
Power Dissipation (Max): 500mW (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 281 pF @ 15 V
auf Bestellung 6143 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
30+0.6 EUR
50+0.44 EUR
100+0.38 EUR
Mindestbestellmenge: 18
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PMV65UNER PMV65UNE.pdf
PMV65UNER
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 2.8A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 73mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 10 V
auf Bestellung 7186 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
39+0.46 EUR
54+0.33 EUR
100+0.29 EUR
Mindestbestellmenge: 24
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PQMB11Z PQMB11.pdf
PQMB11Z
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2PNP DFN1010B-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 180MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
50+0.35 EUR
70+0.25 EUR
100+0.22 EUR
Mindestbestellmenge: 31
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PQMD13Z PQMD13.pdf
PQMD13Z
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 50V 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 350mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 230MHz, 180MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PQMH11Z PQMH11.pdf
PQMH11Z
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN DFN1010B-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: DFN1010B-6
Part Status: Active
Produkt ist nicht verfügbar
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PQMH13Z PQMH13.pdf
PQMH13Z
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2NPN DFN1010B-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 230mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 230MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: DFN1010B-6
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PZU12B2A,115 PZUXBA_SER.pdf
PZU12B2A,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 12V 320MW SOD323
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 320 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
auf Bestellung 1912 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
71+0.25 EUR
99+0.18 EUR
114+0.15 EUR
Mindestbestellmenge: 44
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TDZ7V5J,115 TDZXJ_SER.pdf
TDZ7V5J,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 7.5V 500MW SOD323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 5 V
Qualification: AEC-Q101
auf Bestellung 1716 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
96+0.18 EUR
204+0.087 EUR
500+0.085 EUR
1000+0.082 EUR
Mindestbestellmenge: 63
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PMT280ENEAX PMT280ENEA.pdf
PMT280ENEAX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 385mOhm @ 1.5A, 10V
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 2730 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.9 EUR
31+0.57 EUR
100+0.4 EUR
500+0.32 EUR
Mindestbestellmenge: 20
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NX3008NBKSH NX3008NBKS.pdf
NX3008NBKSH
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 30V 0.35A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 445mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.68nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 6-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3635 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
52+0.34 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.13 EUR
Mindestbestellmenge: 32
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PMV100XPEAR PMV100XPEA.pdf
PMV100XPEAR
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 2.4A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 128mOhm @ 2.4A, 4.5V
Power Dissipation (Max): 463mW (Ta), 1.9W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: TO-236AB
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 5389 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
42+0.43 EUR
58+0.31 EUR
100+0.27 EUR
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PMV35EPER PMV35EPE.pdf
PMV35EPER
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 30V 5.3A TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V
Power Dissipation (Max): 480mW (Ta), 1.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 793 pF @ 15 V
auf Bestellung 2947 Stücke:
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Anzahl Preis
24+0.74 EUR
30+0.6 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.3 EUR
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PMPB55ENEAX PMPB55ENEA.pdf
PMPB55ENEAX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 4A DFN2020MD-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 10A, 10V
Power Dissipation (Max): 1.65W (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3039 Stücke:
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Anzahl Preis
14+1.34 EUR
22+0.83 EUR
50+0.61 EUR
100+0.54 EUR
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NX138AKR NX138AK.pdf
NX138AKR
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 190MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 190mA, 10V
Power Dissipation (Max): 325mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-236AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V
auf Bestellung 18032 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
103+0.17 EUR
145+0.12 EUR
167+0.11 EUR
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NX138AKSX NX138AKS.pdf
NX138AKSX
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 0.17A 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 325mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 30V
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 170mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSSOP
Part Status: Active
auf Bestellung 5355 Stücke:
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Anzahl Preis
35+0.51 EUR
58+0.3 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
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PMN40ENEX PMN40ENE.pdf
PMN40ENEX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 5.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 10V
Power Dissipation (Max): 530mW (Ta), 4.46W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 294 pF @ 15 V
auf Bestellung 4955 Stücke:
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Anzahl Preis
23+0.77 EUR
38+0.47 EUR
52+0.34 EUR
100+0.3 EUR
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NX138BKWX NX138BKW.pdf
NX138BKWX
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 210MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 10V
Power Dissipation (Max): 266mW (Ta), 1.33W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V
auf Bestellung 24939 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
105+0.17 EUR
169+0.1 EUR
500+0.076 EUR
1000+0.067 EUR
Mindestbestellmenge: 67
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PTVS5V0Z1USKYL PTVS5V0Z1USK.pdf
PTVS5V0Z1USKYL
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM 12VC DSN1608-2
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1200pF @ 1MHz
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
auf Bestellung 27316 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
167+0.11 EUR
182+0.097 EUR
Mindestbestellmenge: 112
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PTVS15VZ1USKYL PTVS15VZ1USK.pdf
PTVS15VZ1USKYL
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 15VWM 27.4VC DSN1608-2
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 340pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.5A
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 27.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
auf Bestellung 1 Stücke:
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PTVS18VZ1USKYL PTVS18VZ1USK.pdf
PTVS18VZ1USKYL
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 18VWM 32.8VC DSN1608-2
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 290pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6.4A
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 32.8V
Power - Peak Pulse: 210W
Power Line Protection: No
Part Status: Active
auf Bestellung 8744 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
40+0.45 EUR
55+0.32 EUR
100+0.28 EUR
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PTVS26VZ1USKYL PTVS26VZ1USK.pdf
PTVS26VZ1USKYL
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 26VWM 46VC DSN1608-2
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 215pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4.5A
Voltage - Reverse Standoff (Typ): 26V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
auf Bestellung 11125 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
40+0.45 EUR
55+0.32 EUR
100+0.28 EUR
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PTVS20VZ1USKYL PTVS20VZ1USK.pdf
PTVS20VZ1USKYL
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 20VWM 36.9VC DSN1608-2
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 260pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A
Voltage - Reverse Standoff (Typ): 20V (Max)
Supplier Device Package: DSN1608-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 36.9V
Power - Peak Pulse: 220W
Power Line Protection: No
Part Status: Active
auf Bestellung 26318 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
64+0.28 EUR
153+0.12 EUR
500+0.11 EUR
2000+0.1 EUR
Mindestbestellmenge: 44
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PESD5V0S1UAF PESD5V0S1UA.pdf
PESD5V0S1UAF
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5VWM 19VC SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Frequency: 480pF @ 1MHz
Current - Peak Pulse (10/1000µs): 47A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-323
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 890W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 7431 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
62+0.29 EUR
141+0.13 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 42
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IP4220CZ6F IP4220CZ6.pdf
IP4220CZ6F
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Power Line Protection: Yes
Part Status: Active
auf Bestellung 73704 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
25+0.72 EUR
50+0.52 EUR
100+0.46 EUR
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BAT165AX BAT165A.pdf
BAT165AX
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 500MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 9pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Current - Reverse Leakage @ Vr: 8 µA @ 40 V
auf Bestellung 61892 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
104+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 67
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