PMCM6501UPEZ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tj)
Power Dissipation (Max): 556mW
Supplier Device Package: 6-WLCSP (1.48x0.98)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 4.5 V
| Anzahl | Preis |
|---|---|
| 4500+ | 0.35 EUR |
| 9000+ | 0.31 EUR |
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Technische Details PMCM6501UPEZ Nexperia USA Inc.
Description: MOSFET P-CH 20V 6WLCSP, Packaging: Tape & Reel (TR), Package / Case: 6-XFBGA, WLCSP, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.3A (Tj), Power Dissipation (Max): 556mW, Supplier Device Package: 6-WLCSP (1.48x0.98), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 4.5 V.
Weitere Produktangebote PMCM6501UPEZ nach Preis ab 0.35 EUR bis 0.93 EUR
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PMCM6501UPEZ | Nexperia |
MOSFET PMCM6501UPE/NAX000/NONE |
auf Bestellung 7062 Stücke: Lieferzeit 10-14 Tag (e) |
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PMCM6501UPEZ | Nexperia USA Inc. |
Description: MOSFET P-CH 20V 6WLCSP Power Dissipation (Max): 556mW Current - Continuous Drain (Id) @ 25°C: 7.3A (Tj) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: 6-WLCSP (1.48x0.98) |
auf Bestellung 12278 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PMCM6501UPEZ |
|
Hersteller: Nexperia
MOSFET PMCM6501UPE/NAX000/NONE
MOSFET PMCM6501UPE/NAX000/NONE
auf Bestellung 7062 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 0.85 EUR |
| 10+ | 0.74 EUR |
| 100+ | 0.53 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.36 EUR |
| 4500+ | 0.35 EUR |
| PMCM6501UPEZ |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET P-CH 20V 6WLCSP
Power Dissipation (Max): 556mW
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-WLCSP (1.48x0.98)
Description: MOSFET P-CH 20V 6WLCSP
Power Dissipation (Max): 556mW
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 19.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-WLCSP (1.48x0.98)
auf Bestellung 12278 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 0.93 EUR |
| 22+ | 0.81 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.4 EUR |
| 2000+ | 0.35 EUR |