PSMN018-100PSFQ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 53A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1482 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 111W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Technische Details PSMN018-100PSFQ Nexperia USA Inc.
Description: MOSFET N-CH 100V 53A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 1482 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 111W (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 53A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote PSMN018-100PSFQ
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| PSMN018-100PSFQ | Nexperia |
MOSFET PSMN018-100PSF SOT78/SIL3P |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PSMN018-100PSFQ |
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Hersteller: Nexperia
MOSFET PSMN018-100PSF SOT78/SIL3P
MOSFET PSMN018-100PSF SOT78/SIL3P
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH