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PMP5501G,115 PMP5501G,115 Nexperia USA Inc. PHGLS19178-1.pdf?t.download=true&u=5oefqw Description: TRANS 2PNP 45V 100MA SOT-353
Packaging: Bulk
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: SOT-353
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PSMN4R5-80YSFX PSMN4R5-80YSFX Nexperia USA Inc. PSMN4R5-80YSF.pdf Description: NEXTPOWER 80/100V MOSFETS
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6009 pF @ 40 V
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GANB4R8-040CBAZ GANB4R8-040CBAZ Nexperia USA Inc. GANB4R8-040CBA.pdf Description: GANB4R8-040CBA/SOT8086/WLCSP22
Packaging: Tape & Reel (TR)
Package / Case: 22-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 5V
Power Dissipation (Max): 13W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 22-WLCSP (2.1x2.1)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): 40V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 20 V
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GANB4R8-040CBAZ GANB4R8-040CBAZ Nexperia USA Inc. GANB4R8-040CBA.pdf Description: GANB4R8-040CBA/SOT8086/WLCSP22
Packaging: Cut Tape (CT)
Package / Case: 22-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 5V
Power Dissipation (Max): 13W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 22-WLCSP (2.1x2.1)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): 40V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 20 V
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74AXP2G07GMH 74AXP2G07GMH Nexperia USA Inc. 74AXP2G07.pdf Description: IC BUF NON-INVERT 2.75V 6XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.7V ~ 2.75V
Number of Bits per Element: 1
Current - Output High, Low: -, 8mA
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Produkt ist nicht verfügbar
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74LVC04ADB,112 74LVC04ADB,112 Nexperia USA Inc. 74LVC04A.pdf Description: IC INVERTER
Packaging: Bulk
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74AUP2G97DPJ 74AUP2G97DPJ Nexperia USA Inc. 74AUP2G97.pdf Description: IC MF CFG 2-CIR 3-IN 10TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: 10-TSSOP
Number of Circuits: 2
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74AUP2G97DPJ 74AUP2G97DPJ Nexperia USA Inc. 74AUP2G97.pdf Description: IC MF CFG 2-CIR 3-IN 10TSSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: 10-TSSOP
Number of Circuits: 2
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21+1.05 EUR
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100+0.82 EUR
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500+0.74 EUR
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CBT3384PW,118 CBT3384PW,118 Nexperia USA Inc. CBT3384.pdf Description: IC BUS SWITCH 5 X 1:1 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 5 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 24-TSSOP
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CBT3384D,118 CBT3384D,118 Nexperia USA Inc. CBT3384.pdf Description: IC BUS SWITCH 5 X 1:1 24SO
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 5 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 24-SO
Produkt ist nicht verfügbar
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PZU10B1A-QX PZU10B1A-QX Nexperia USA Inc. PZUXBA-Q_SER.pdf Description: DIODE ZENER 10V 320MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.66 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 320 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 7 V
Qualification: AEC-Q101
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PZU24B1,115 PZU24B1,115 Nexperia USA Inc. PZUXB_SER.pdf Description: DIODE ZENER 24V 310MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
Qualification: AEC-Q100
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PZU24B1,115 PZU24B1,115 Nexperia USA Inc. PZUXB_SER.pdf Description: DIODE ZENER 24V 310MW SOD323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BZX84W-B13-QX BZX84W-B13-QX Nexperia USA Inc. BZX84W-Q_SER.pdf Description: BZX84W-B13-Q/SOT323/SC-70
Tolerance: ±2.31%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
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BZX884S-C4V3-QYL BZX884S-C4V3-QYL Nexperia USA Inc. BZX884S-Q_SER.pdf Description: SMALL SIGNAL BIPOLAR IN DFN PACK
Tolerance: ±6.98%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DFN1006BD-2
Grade: Automotive
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
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BZT52H-C4V3-QX BZT52H-C4V3-QX Nexperia USA Inc. BZT52H-Q_SER.pdf Description: BZT52H-C4V3-Q/SOD123F/SOD2
Tolerance: ±6.98%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
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74AUP1G86GM,132 74AUP1G86GM,132 Nexperia USA Inc. 74AUP1G86.pdf Description: IC GATE XOR 1CH 2-INP 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 7.1ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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74LVC1G10GF,132 74LVC1G10GF,132 Nexperia USA Inc. 74LVC1G10.pdf Description: IC GATE NAND 1CH 3-INP 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-XSON, SOT891 (1x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
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74AUP1T57GN,132 74AUP1T57GN,132 Nexperia USA Inc. 74AUP1T57.pdf Description: NEXPERIA 74AUP1T57GN - MAJORITY
Packaging: Bulk
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HEF4028BT,652 HEF4028BT,652 Nexperia USA Inc. PHGLS23985-1.pdf?t.download=true&u=5oefqw Description: IC DECODER 1 X 4:10 16-SO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 4:10
Type: Decoder
Voltage - Supply: 4.5V ~ 15.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 16-SO
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PSMN0R9-30ULD/2X Nexperia USA Inc. PSMN0R9-30ULD.pdf Description: PSMN0R9-30ULD/SOT1023/4 LEADS
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
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PDTA144EMB,315 PDTA144EMB,315 Nexperia USA Inc. PDTA144EMB.pdf Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1006B-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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74HCT4046ADB,118 74HCT4046ADB,118 Nexperia USA Inc. 74HC_HCT4046A.pdf Description: PLL FREQUENCY SYNTHESIZER, CMOS,
Packaging: Bulk
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 21MHz
Type: Phase Lock Loop (PLL)
Input: Clock
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Differential - Input:Output: No/No
Supplier Device Package: 16-SSOP
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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74HC237D,652 74HC237D,652 Nexperia USA Inc. 74HC237.pdf Description: IC DECODER/DEMUX 1 X 3:8 16-SO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SO
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BUK765R2-40B,118 BUK765R2-40B,118 Nexperia USA Inc. BUK765R2-40B.pdf Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V
Power Dissipation (Max): 203W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3789 pF @ 25 V
Qualification: AEC-Q101
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74AHCT373D,118 74AHCT373D,118 Nexperia USA Inc. 74AHC373.pdf Description: BUS DRIVER
Packaging: Bulk
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ES2DRX ES2DRX Nexperia USA Inc. ES2DR.pdf Description: DIODE STANDARD 200V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
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S25FS256SDSBHI200 S25FS256SDSBHI200 Nexperia USA Inc. FASL-S-A0000086511-1.pdf?t.download=true&u=5oefqw Description: S25FS256S - 256-Mbit MIRRORBIT F
Packaging: Bulk
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BZX8450-C30-QVL BZX8450-C30-QVL Nexperia USA Inc. BZX8450-Q_SER.pdf Description: BZX8450-C30-Q/SOT23/TO-236AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: TO-236AB
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 22.8 V
Qualification: AEC-Q100
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74AXP1G07GXH 74AXP1G07GXH Nexperia USA Inc. 74AXP1G07.pdf Description: NEXPERIA 74AXP1G07 - LOW-POWER B
Packaging: Bulk
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74AXP1G57GSH 74AXP1G57GSH Nexperia USA Inc. 74AXP1G57.pdf Description: NEXPERIA 74AXP1G57 - LOW-POWER C
Packaging: Bulk
auf Bestellung 195000 Stücke:
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PBSS4350PASX PBSS4350PASX Nexperia USA Inc. PBSS4350PAS.pdf Description: PBSS4350PAS/SOT1061/HUSON3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PBSS4350PASX PBSS4350PASX Nexperia USA Inc. PBSS4350PAS.pdf Description: PBSS4350PAS/SOT1061/HUSON3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PBSS4350PAS-QX PBSS4350PAS-QX Nexperia USA Inc. PBSS4350PAS-Q.pdf Description: PBSS4350PAS-Q/SOT1061/HUSON3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PBSS4350PAS-QX PBSS4350PAS-QX Nexperia USA Inc. PBSS4350PAS-Q.pdf Description: PBSS4350PAS-Q/SOT1061/HUSON3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: AEC-Q101
auf Bestellung 2997 Stücke:
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25+0.84 EUR
100+0.55 EUR
500+0.42 EUR
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PBSS5250PASX PBSS5250PASX Nexperia USA Inc. PBSS5250PAS.pdf Description: PBSS5250PAS/SOT1061/HUSON3
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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PBSS5250PASX PBSS5250PASX Nexperia USA Inc. PBSS5250PAS.pdf Description: PBSS5250PAS/SOT1061/HUSON3
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
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54+0.39 EUR
60+0.35 EUR
100+0.3 EUR
250+0.27 EUR
500+0.26 EUR
1000+0.25 EUR
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PBSS5250PAS-QX PBSS5250PAS-QX Nexperia USA Inc. PBSS5250PAS-Q.pdf Description: PBSS5250PAS-Q/SOT1061/HUSON3
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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PBSS5250PAS-QX PBSS5250PAS-QX Nexperia USA Inc. PBSS5250PAS-Q.pdf Description: PBSS5250PAS-Q/SOT1061/HUSON3
Packaging: Cut Tape (CT)
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51+0.42 EUR
58+0.37 EUR
100+0.31 EUR
250+0.29 EUR
500+0.27 EUR
1000+0.26 EUR
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GANE3R9-150QBAZ GANE3R9-150QBAZ Nexperia USA Inc. GANE3R9-150QBA.pdf Description: GANE3R9-150QBA/SOT8091/VQFN7
Packaging: Tape & Reel (TR)
Package / Case: 25-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V
Power Dissipation (Max): 65W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 12mA
Supplier Device Package: 25-VQFN (4x6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
Produkt ist nicht verfügbar
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GANE3R9-150QBAZ GANE3R9-150QBAZ Nexperia USA Inc. GANE3R9-150QBA.pdf Description: GANE3R9-150QBA/SOT8091/VQFN7
Packaging: Cut Tape (CT)
Package / Case: 25-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V
Power Dissipation (Max): 65W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 12mA
Supplier Device Package: 25-VQFN (4x6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
auf Bestellung 1933 Stücke:
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10+11.8 EUR
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NSF080120D7A0J NSF080120D7A0J Nexperia USA Inc. NSF080120D7A0.pdf Description: SICFET N-CH 1200V 33A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 20A, 15V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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NSF080120D7A0J NSF080120D7A0J Nexperia USA Inc. NSF080120D7A0.pdf Description: SICFET N-CH 1200V 33A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 20A, 15V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
auf Bestellung 575 Stücke:
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1+28.05 EUR
10+19.62 EUR
50+16.03 EUR
100+14.88 EUR
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NSF060120D7A0J NSF060120D7A0J Nexperia USA Inc. NSF060120D7A0.pdf Description: SICFET N-CH 1200V 38A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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NSF060120D7A0J NSF060120D7A0J Nexperia USA Inc. NSF060120D7A0.pdf Description: SICFET N-CH 1200V 38A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
auf Bestellung 770 Stücke:
Lieferzeit 10-14 Tag (e)
1+31.8 EUR
10+22.41 EUR
50+18.41 EUR
100+17.35 EUR
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NSF060120L3A0Q NSF060120L3A0Q Nexperia USA Inc. NSF060120L3A0.pdf Description: SICFET N-CH 1200V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
auf Bestellung 435 Stücke:
Lieferzeit 10-14 Tag (e)
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10+22.41 EUR
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NSF060120L4A0Q NSF060120L4A0Q Nexperia USA Inc. NSF060120L4A0.pdf Description: SICFET N-CH 1200V 37A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
auf Bestellung 410 Stücke:
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1+30.83 EUR
10+21.8 EUR
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NSF040120D7A0J NSF040120D7A0J Nexperia USA Inc. NSF040120D7A0.pdf Description: SICFET N-CH 1200V 65A TO263
Supplier Device Package: TO-236-7
Vgs(th) (Max) @ Id: 2.9V @ 4mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 40A, 15V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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NSF040120D7A0J NSF040120D7A0J Nexperia USA Inc. NSF040120D7A0.pdf Description: SICFET N-CH 1200V 65A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 40A, 15V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 4mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V
auf Bestellung 797 Stücke:
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1+39.54 EUR
10+28.24 EUR
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100+22.98 EUR
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NSF030120L4A0Q Nexperia USA Inc. Description: NSF030120L4A0/SOT8071/TO247-4L
Packaging: Tube
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
1+36.51 EUR
10+33.68 EUR
30+32.17 EUR
120+28.75 EUR
270+27.43 EUR
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NSF030120D7A0J NSF030120D7A0J Nexperia USA Inc. NSF030120D7A0.pdf Description: SICFET N-CH 1200V 67A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 18V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 4mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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NSF030120D7A0J NSF030120D7A0J Nexperia USA Inc. NSF030120D7A0.pdf Description: SICFET N-CH 1200V 67A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 18V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 4mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V
auf Bestellung 795 Stücke:
Lieferzeit 10-14 Tag (e)
1+44.92 EUR
10+32.31 EUR
50+27.04 EUR
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74HCT366PW-Q100,11 74HCT366PW-Q100,11 Nexperia USA Inc. 74HC_HCT366_Q100.pdf Description: IC BUFF 4.5V/5.5V 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 6
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 16-TSSOP
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 44017 Stücke:
Lieferzeit 10-14 Tag (e)
344+1.55 EUR
Mindestbestellmenge: 344 Stücke
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74HCT368PW,118 74HCT368PW,118 Nexperia USA Inc. 74HC_HCT368.pdf Description: IC BUFFER INVERT 5.5V 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 2, 4 (Hex)
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 16-TSSOP
Produkt ist nicht verfügbar
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BZX84W-B9V1-QF BZX84W-B9V1-QF Nexperia USA Inc. BZX84W-Q_SER.pdf Description: BZX84W-B9V1-Q/SOT323/SC-70
Tolerance: ±1.98%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52H-B9V1-QX BZT52H-B9V1-QX Nexperia USA Inc. BZT52H-Q_SER.pdf Description: DIODE ZENER 9.1V 375MW SOD123F
Tolerance: ±1.98%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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BZX84W-B9V1-QX BZX84W-B9V1-QX Nexperia USA Inc. BZX84W-Q_SER.pdf Description: BZX84W-B9V1-Q/SOT323/SC-70
Tolerance: ±1.98%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NZX14B,133 NZX14B,133 Nexperia USA Inc. NZX_SER.pdf Description: DIODE ZENER 13.75V 500MW ALF2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13.75 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: ALF2
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
auf Bestellung 9671 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.42 EUR
83+0.25 EUR
117+0.18 EUR
134+0.15 EUR
Mindestbestellmenge: 50 Stücke
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NZX14B,133 NZX14B,133 Nexperia USA Inc. NZX_SER.pdf Description: DIODE ZENER 13.75V 500MW ALF2
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13.75 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: ALF2
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Produkt ist nicht verfügbar
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BZX79-C30,133 BZX79-C30,133 Nexperia USA Inc. BZX79.pdf Description: DIODE ZENER 30V 400MW ALF2
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: ALF2
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 700 mV
auf Bestellung 1454 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.25 EUR
132+0.15 EUR
216+0.096 EUR
500+0.07 EUR
1000+0.062 EUR
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PMP5501G,115 PHGLS19178-1.pdf?t.download=true&u=5oefqw
PMP5501G,115
Hersteller: Nexperia USA Inc.
Description: TRANS 2PNP 45V 100MA SOT-353
Packaging: Bulk
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter
Operating Temperature: 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 175MHz
Supplier Device Package: SOT-353
auf Bestellung 265269 Stücke:
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3643+0.14 EUR
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PSMN4R5-80YSFX PSMN4R5-80YSF.pdf
PSMN4R5-80YSFX
Hersteller: Nexperia USA Inc.
Description: NEXTPOWER 80/100V MOSFETS
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6009 pF @ 40 V
auf Bestellung 1134 Stücke:
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4+6.94 EUR
10+4.51 EUR
50+3.47 EUR
100+3.14 EUR
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GANB4R8-040CBAZ GANB4R8-040CBA.pdf
GANB4R8-040CBAZ
Hersteller: Nexperia USA Inc.
Description: GANB4R8-040CBA/SOT8086/WLCSP22
Packaging: Tape & Reel (TR)
Package / Case: 22-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 5V
Power Dissipation (Max): 13W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 22-WLCSP (2.1x2.1)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): 40V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 20 V
Produkt ist nicht verfügbar
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GANB4R8-040CBAZ GANB4R8-040CBA.pdf
GANB4R8-040CBAZ
Hersteller: Nexperia USA Inc.
Description: GANB4R8-040CBA/SOT8086/WLCSP22
Packaging: Cut Tape (CT)
Package / Case: 22-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 10A, 5V
Power Dissipation (Max): 13W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: 22-WLCSP (2.1x2.1)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): 40V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 20 V
auf Bestellung 1030 Stücke:
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AnzahlPrivatkunde
5+5.13 EUR
10+3.32 EUR
100+2.28 EUR
500+1.89 EUR
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74AXP2G07GMH 74AXP2G07.pdf
74AXP2G07GMH
Hersteller: Nexperia USA Inc.
Description: IC BUF NON-INVERT 2.75V 6XSON
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.7V ~ 2.75V
Number of Bits per Element: 1
Current - Output High, Low: -, 8mA
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Produkt ist nicht verfügbar
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74LVC04ADB,112 74LVC04A.pdf
74LVC04ADB,112
Hersteller: Nexperia USA Inc.
Description: IC INVERTER
Packaging: Bulk
auf Bestellung 20202 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1955+0.3 EUR
Mindestbestellmenge: 1955 Stücke
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74AUP2G97DPJ 74AUP2G97.pdf
74AUP2G97DPJ
Hersteller: Nexperia USA Inc.
Description: IC MF CFG 2-CIR 3-IN 10TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: 10-TSSOP
Number of Circuits: 2
Produkt ist nicht verfügbar
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74AUP2G97DPJ 74AUP2G97.pdf
74AUP2G97DPJ
Hersteller: Nexperia USA Inc.
Description: IC MF CFG 2-CIR 3-IN 10TSSOP
Packaging: Cut Tape (CT)
Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
Output Type: Single-Ended
Mounting Type: Surface Mount
Logic Type: Configurable Multiple Function
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 3
Schmitt Trigger Input: Yes
Supplier Device Package: 10-TSSOP
Number of Circuits: 2
auf Bestellung 2347 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.46 EUR
21+1.05 EUR
25+0.94 EUR
100+0.82 EUR
250+0.77 EUR
500+0.74 EUR
1000+0.7 EUR
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CBT3384PW,118 CBT3384.pdf
CBT3384PW,118
Hersteller: Nexperia USA Inc.
Description: IC BUS SWITCH 5 X 1:1 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 5 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 24-TSSOP
Produkt ist nicht verfügbar
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CBT3384D,118 CBT3384.pdf
CBT3384D,118
Hersteller: Nexperia USA Inc.
Description: IC BUS SWITCH 5 X 1:1 24SO
Packaging: Tape & Reel (TR)
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Circuit: 5 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 24-SO
Produkt ist nicht verfügbar
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PZU10B1A-QX PZUXBA-Q_SER.pdf
PZU10B1A-QX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 10V 320MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.66 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Grade: Automotive
Power - Max: 320 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 7 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PZU24B1,115 PZUXB_SER.pdf
PZU24B1,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 24V 310MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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PZU24B1,115 PZUXB_SER.pdf
PZU24B1,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 24V 310MW SOD323F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323F
Grade: Automotive
Power - Max: 310 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 19 V
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BZX84W-B13-QX BZX84W-Q_SER.pdf
BZX84W-B13-QX
Hersteller: Nexperia USA Inc.
Description: BZX84W-B13-Q/SOT323/SC-70
Tolerance: ±2.31%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BZX884S-C4V3-QYL BZX884S-Q_SER.pdf
BZX884S-C4V3-QYL
Hersteller: Nexperia USA Inc.
Description: SMALL SIGNAL BIPOLAR IN DFN PACK
Tolerance: ±6.98%
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DFN1006BD-2
Grade: Automotive
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52H-C4V3-QX BZT52H-Q_SER.pdf
BZT52H-C4V3-QX
Hersteller: Nexperia USA Inc.
Description: BZT52H-C4V3-Q/SOD123F/SOD2
Tolerance: ±6.98%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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74AUP1G86GM,132 74AUP1G86.pdf
74AUP1G86GM,132
Hersteller: Nexperia USA Inc.
Description: IC GATE XOR 1CH 2-INP 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 7.1ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.13 EUR
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74LVC1G10GF,132 74LVC1G10.pdf
74LVC1G10GF,132
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 1CH 3-INP 6XSON
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-XSON, SOT891 (1x1)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 3.6ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 4 µA
auf Bestellung 170000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1368+0.39 EUR
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74AUP1T57GN,132 74AUP1T57.pdf
74AUP1T57GN,132
Hersteller: Nexperia USA Inc.
Description: NEXPERIA 74AUP1T57GN - MAJORITY
Packaging: Bulk
auf Bestellung 95000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3063+0.19 EUR
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HEF4028BT,652 PHGLS23985-1.pdf?t.download=true&u=5oefqw
HEF4028BT,652
Hersteller: Nexperia USA Inc.
Description: IC DECODER 1 X 4:10 16-SO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 4:10
Type: Decoder
Voltage - Supply: 4.5V ~ 15.5V
Independent Circuits: 1
Voltage Supply Source: Dual Supply
Supplier Device Package: 16-SO
auf Bestellung 18113 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
564+0.94 EUR
Mindestbestellmenge: 564 Stücke
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PSMN0R9-30ULD/2X PSMN0R9-30ULD.pdf
Hersteller: Nexperia USA Inc.
Description: PSMN0R9-30ULD/SOT1023/4 LEADS
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.87mOhm @ 25A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7668 pF @ 15 V
Produkt ist nicht verfügbar
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PDTA144EMB,315 PDTA144EMB.pdf
PDTA144EMB,315
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: DFN1006B-3
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 180 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q100
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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74HCT4046ADB,118 74HC_HCT4046A.pdf
74HCT4046ADB,118
Hersteller: Nexperia USA Inc.
Description: PLL FREQUENCY SYNTHESIZER, CMOS,
Packaging: Bulk
Package / Case: 16-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 21MHz
Type: Phase Lock Loop (PLL)
Input: Clock
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Differential - Input:Output: No/No
Supplier Device Package: 16-SSOP
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 5843 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
182+2.94 EUR
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74HC237D,652 74HC237.pdf
74HC237D,652
Hersteller: Nexperia USA Inc.
Description: IC DECODER/DEMUX 1 X 3:8 16-SO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Independent Circuits: 1
Current - Output High, Low: 5.2mA, 5.2mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SO
auf Bestellung 49138 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
368+1.46 EUR
Mindestbestellmenge: 368 Stücke
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BUK765R2-40B,118 BUK765R2-40B.pdf
BUK765R2-40B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V
Power Dissipation (Max): 203W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3789 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 4700 Stücke:
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AnzahlPrivatkunde
311+1.78 EUR
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74AHCT373D,118 74AHC373.pdf
74AHCT373D,118
Hersteller: Nexperia USA Inc.
Description: BUS DRIVER
Packaging: Bulk
auf Bestellung 5551 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
621+0.87 EUR
Mindestbestellmenge: 621 Stücke
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ES2DRX ES2DR.pdf
ES2DRX
Hersteller: Nexperia USA Inc.
Description: DIODE STANDARD 200V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 nA @ 200 V
Produkt ist nicht verfügbar
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S25FS256SDSBHI200 FASL-S-A0000086511-1.pdf?t.download=true&u=5oefqw
S25FS256SDSBHI200
Hersteller: Nexperia USA Inc.
Description: S25FS256S - 256-Mbit MIRRORBIT F
Packaging: Bulk
auf Bestellung 595 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
58+10.08 EUR
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BZX8450-C30-QVL BZX8450-Q_SER.pdf
BZX8450-C30-QVL
Hersteller: Nexperia USA Inc.
Description: BZX8450-C30-Q/SOT23/TO-236AB
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: TO-236AB
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 22.8 V
Qualification: AEC-Q100
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.054 EUR
Mindestbestellmenge: 10000 Stücke
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74AXP1G07GXH 74AXP1G07.pdf
74AXP1G07GXH
Hersteller: Nexperia USA Inc.
Description: NEXPERIA 74AXP1G07 - LOW-POWER B
Packaging: Bulk
auf Bestellung 170000 Stücke:
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74AXP1G57GSH 74AXP1G57.pdf
74AXP1G57GSH
Hersteller: Nexperia USA Inc.
Description: NEXPERIA 74AXP1G57 - LOW-POWER C
Packaging: Bulk
auf Bestellung 195000 Stücke:
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PBSS4350PASX PBSS4350PAS.pdf
PBSS4350PASX
Hersteller: Nexperia USA Inc.
Description: PBSS4350PAS/SOT1061/HUSON3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PBSS4350PASX PBSS4350PAS.pdf
PBSS4350PASX
Hersteller: Nexperia USA Inc.
Description: PBSS4350PAS/SOT1061/HUSON3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PBSS4350PAS-QX PBSS4350PAS-Q.pdf
PBSS4350PAS-QX
Hersteller: Nexperia USA Inc.
Description: PBSS4350PAS-Q/SOT1061/HUSON3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PBSS4350PAS-QX PBSS4350PAS-Q.pdf
PBSS4350PAS-QX
Hersteller: Nexperia USA Inc.
Description: PBSS4350PAS-Q/SOT1061/HUSON3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: DFN2020D-3
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: AEC-Q101
auf Bestellung 2997 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
16+1.34 EUR
25+0.84 EUR
100+0.55 EUR
500+0.42 EUR
1000+0.37 EUR
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PBSS5250PASX PBSS5250PAS.pdf
PBSS5250PASX
Hersteller: Nexperia USA Inc.
Description: PBSS5250PAS/SOT1061/HUSON3
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.27 EUR
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PBSS5250PASX PBSS5250PAS.pdf
PBSS5250PASX
Hersteller: Nexperia USA Inc.
Description: PBSS5250PAS/SOT1061/HUSON3
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
36+0.58 EUR
54+0.39 EUR
60+0.35 EUR
100+0.3 EUR
250+0.27 EUR
500+0.26 EUR
1000+0.25 EUR
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PBSS5250PAS-QX PBSS5250PAS-Q.pdf
PBSS5250PAS-QX
Hersteller: Nexperia USA Inc.
Description: PBSS5250PAS-Q/SOT1061/HUSON3
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.29 EUR
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PBSS5250PAS-QX PBSS5250PAS-Q.pdf
PBSS5250PAS-QX
Hersteller: Nexperia USA Inc.
Description: PBSS5250PAS-Q/SOT1061/HUSON3
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+0.61 EUR
51+0.42 EUR
58+0.37 EUR
100+0.31 EUR
250+0.29 EUR
500+0.27 EUR
1000+0.26 EUR
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GANE3R9-150QBAZ GANE3R9-150QBA.pdf
GANE3R9-150QBAZ
Hersteller: Nexperia USA Inc.
Description: GANE3R9-150QBA/SOT8091/VQFN7
Packaging: Tape & Reel (TR)
Package / Case: 25-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V
Power Dissipation (Max): 65W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 12mA
Supplier Device Package: 25-VQFN (4x6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
Produkt ist nicht verfügbar
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GANE3R9-150QBAZ GANE3R9-150QBA.pdf
GANE3R9-150QBAZ
Hersteller: Nexperia USA Inc.
Description: GANE3R9-150QBA/SOT8091/VQFN7
Packaging: Cut Tape (CT)
Package / Case: 25-PowerVFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 5V
Power Dissipation (Max): 65W (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 12mA
Supplier Device Package: 25-VQFN (4x6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 75 V
auf Bestellung 1933 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.26 EUR
10+11.8 EUR
100+8.78 EUR
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NSF080120D7A0J NSF080120D7A0.pdf
NSF080120D7A0J
Hersteller: Nexperia USA Inc.
Description: SICFET N-CH 1200V 33A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 20A, 15V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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NSF080120D7A0J NSF080120D7A0.pdf
NSF080120D7A0J
Hersteller: Nexperia USA Inc.
Description: SICFET N-CH 1200V 33A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 20A, 15V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
auf Bestellung 575 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+28.05 EUR
10+19.62 EUR
50+16.03 EUR
100+14.88 EUR
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NSF060120D7A0J NSF060120D7A0.pdf
NSF060120D7A0J
Hersteller: Nexperia USA Inc.
Description: SICFET N-CH 1200V 38A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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NSF060120D7A0J NSF060120D7A0.pdf
NSF060120D7A0J
Hersteller: Nexperia USA Inc.
Description: SICFET N-CH 1200V 38A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
auf Bestellung 770 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+31.8 EUR
10+22.41 EUR
50+18.41 EUR
100+17.35 EUR
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NSF060120L3A0Q NSF060120L3A0.pdf
NSF060120L3A0Q
Hersteller: Nexperia USA Inc.
Description: SICFET N-CH 1200V 37A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-247-3L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
auf Bestellung 435 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+31.8 EUR
10+22.41 EUR
50+18.41 EUR
100+17.35 EUR
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NSF060120L4A0Q NSF060120L4A0.pdf
NSF060120L4A0Q
Hersteller: Nexperia USA Inc.
Description: SICFET N-CH 1200V 37A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 18V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 2mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 800 V
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+30.83 EUR
10+21.8 EUR
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NSF040120D7A0J NSF040120D7A0.pdf
NSF040120D7A0J
Hersteller: Nexperia USA Inc.
Description: SICFET N-CH 1200V 65A TO263
Supplier Device Package: TO-236-7
Vgs(th) (Max) @ Id: 2.9V @ 4mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 40A, 15V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 15 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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NSF040120D7A0J NSF040120D7A0.pdf
NSF040120D7A0J
Hersteller: Nexperia USA Inc.
Description: SICFET N-CH 1200V 65A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 40A, 15V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 4mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V
auf Bestellung 797 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+39.54 EUR
10+28.24 EUR
50+23.41 EUR
100+22.98 EUR
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NSF030120L4A0Q
Hersteller: Nexperia USA Inc.
Description: NSF030120L4A0/SOT8071/TO247-4L
Packaging: Tube
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+36.51 EUR
10+33.68 EUR
30+32.17 EUR
120+28.75 EUR
270+27.43 EUR
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NSF030120D7A0J NSF030120D7A0.pdf
NSF030120D7A0J
Hersteller: Nexperia USA Inc.
Description: SICFET N-CH 1200V 67A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 18V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 4mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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NSF030120D7A0J NSF030120D7A0.pdf
NSF030120D7A0J
Hersteller: Nexperia USA Inc.
Description: SICFET N-CH 1200V 67A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 18V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 4mA
Supplier Device Package: TO-236-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 800 V
auf Bestellung 795 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+44.92 EUR
10+32.31 EUR
50+27.04 EUR
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74HCT366PW-Q100,11 74HC_HCT366_Q100.pdf
74HCT366PW-Q100,11
Hersteller: Nexperia USA Inc.
Description: IC BUFF 4.5V/5.5V 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 6
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 16-TSSOP
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 44017 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
344+1.55 EUR
Mindestbestellmenge: 344 Stücke
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74HCT368PW,118 74HC_HCT368.pdf
74HCT368PW,118
Hersteller: Nexperia USA Inc.
Description: IC BUFFER INVERT 5.5V 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 2, 4 (Hex)
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 16-TSSOP
Produkt ist nicht verfügbar
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BZX84W-B9V1-QF BZX84W-Q_SER.pdf
BZX84W-B9V1-QF
Hersteller: Nexperia USA Inc.
Description: BZX84W-B9V1-Q/SOT323/SC-70
Tolerance: ±1.98%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BZT52H-B9V1-QX BZT52H-Q_SER.pdf
BZT52H-B9V1-QX
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 9.1V 375MW SOD123F
Tolerance: ±1.98%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-123F
Grade: Automotive
Power - Max: 375 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BZX84W-B9V1-QX BZX84W-Q_SER.pdf
BZX84W-B9V1-QX
Hersteller: Nexperia USA Inc.
Description: BZX84W-B9V1-Q/SOT323/SC-70
Tolerance: ±1.98%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NZX14B,133 NZX_SER.pdf
NZX14B,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 13.75V 500MW ALF2
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13.75 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: ALF2
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
auf Bestellung 9671 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
50+0.42 EUR
83+0.25 EUR
117+0.18 EUR
134+0.15 EUR
Mindestbestellmenge: 50 Stücke
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NZX14B,133 NZX_SER.pdf
NZX14B,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 13.75V 500MW ALF2
Tolerance: ±2%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13.75 V
Impedance (Max) (Zzt): 35 Ohms
Supplier Device Package: ALF2
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.87 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BZX79-C30,133 BZX79.pdf
BZX79-C30,133
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 30V 400MW ALF2
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: ALF2
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 700 mV
auf Bestellung 1454 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
84+0.25 EUR
132+0.15 EUR
216+0.096 EUR
500+0.07 EUR
1000+0.062 EUR
Mindestbestellmenge: 84 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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