Die Produkte nexperia usa inc.
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Foto | Bezeichnung | Tech.inf. | Hersteller | Beschreibung | Informationen zu Lagerverfügbarkeit und Lieferzeiten | Preis ohne MwSt |
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BZV90-C2V7,115 |
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Nexperia USA Inc. |
Description: DIODE ZENER 2.7V 1.5W SOT223 Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 2.7V Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA Current - Reverse Leakage @ Vr: 20µA @ 1V Tolerance: ±5% Power - Max: 1.5W Impedance (Max) (Zzt): 100 Ohms |
auf Bestellung 3490 Stücke![]() Lieferzeit 21-28 Tag (e)
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BZV90-C27,115 |
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Nexperia USA Inc. |
Description: DIODE ZENER 27V 1.5W SOT223 Package / Case: TO-261-4, TO-261AA Tolerance: ±5% Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Power - Max: 1.5 W Part Status: Active Supplier Device Package: SOT-223 Impedance (Max) (Zzt): 80 Ohms Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 27 V |
auf Bestellung 8000 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 13724 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: DIODE ZENER 27V 1.5W SOT223 Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V Mounting Type: Surface Mount Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA Power - Max: 1.5 W Part Status: Active Package / Case: TO-261-4, TO-261AA Tolerance: ±5% Packaging: Cut Tape (CT) Supplier Device Package: SOT-223 Impedance (Max) (Zzt): 80 Ohms Voltage - Zener (Nom) (Vz): 27 V Operating Temperature: -65°C ~ 150°C |
auf Bestellung 10364 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 13724 Stücke - Preis und Lieferfrist anzeigen
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BAS20,215 |
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Nexperia USA Inc. |
Description: DIODE GEN PURP 150V 200MA SOT23 Diode Type: Standard Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 nA @ 150 V Voltage - DC Reverse (Vr) (Max): 150 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-236AB Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Capacitance @ Vr, F: 5pF @ 0V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed |
auf Bestellung 23764 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 51406 Stücke - Preis und Lieferfrist anzeigen
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BAS19,235 |
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Nexperia USA Inc. |
Description: DIODE GP 100V 200MA TO236AB Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-236AB Current - Average Rectified (Io): 200mA (DC) Capacitance @ Vr, F: 5pF @ 0V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 100 nA @ 100 V Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BAS19,215 |
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Nexperia USA Inc. |
Description: DIODE GP 100V 200MA TO236AB Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Current - Reverse Leakage @ Vr: 100 nA @ 100 V Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-236AB Current - Average Rectified (Io): 200mA (DC) Capacitance @ Vr, F: 5pF @ 0V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard |
auf Bestellung 36000 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 41697 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: DIODE GP 100V 200MA TO236AB Current - Reverse Leakage @ Vr: 100 nA @ 100 V Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TO-236AB Current - Average Rectified (Io): 200mA (DC) Capacitance @ Vr, F: 5pF @ 0V, 1MHz Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Standard |
auf Bestellung 36630 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 41697 Stücke - Preis und Lieferfrist anzeigen
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BAS40H,115 |
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Nexperia USA Inc. |
Description: DIODE SCHOTTKY 40V 120MA SOD123F Current - Reverse Leakage @ Vr: 10 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOD-123F Current - Average Rectified (Io): 120mA (DC) Capacitance @ Vr, F: 5pF @ 0V, 1MHz Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Schottky Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Tape & Reel (TR) |
auf Bestellung 48000 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 2 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: DIODE SCHOTTKY 40V 120MA SOD123F Current - Reverse Leakage @ Vr: 10 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Average Rectified (Io): 120mA (DC) Capacitance @ Vr, F: 5pF @ 0V, 1MHz Speed: Small Signal =< 200mA (Io), Any Speed Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Diode Type: Schottky Mounting Type: Surface Mount Package / Case: SOD-123F Packaging: Cut Tape (CT) Supplier Device Package: SOD-123F |
auf Bestellung 50588 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 2 Stücke - Preis und Lieferfrist anzeigen
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BAS116H,115 |
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Nexperia USA Inc. |
Description: DIODE GEN PURP 75V 215MA SOD123F Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Diode Type: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA (DC) Supplier Device Package: SOD-123F Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V |
auf Bestellung 6000 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 67586 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: DIODE GEN PURP 75V 215MA SOD123F Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Diode Type: Standard Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 215mA (DC) Supplier Device Package: SOD-123F Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 5 nA @ 75 V |
auf Bestellung 11900 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 67586 Stücke - Preis und Lieferfrist anzeigen
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1PS76SB40,135 |
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Nexperia USA Inc. |
Description: DIODE SCHOTTKY 40V 120MA SOD323 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 40 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOD-323 Current - Average Rectified (Io): 120mA (DC) Capacitance @ Vr, F: 5pF @ 0V, 1MHz Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Schottky Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Voltage - DC Reverse (Vr) (Max): 40 V |
auf Bestellung 31263 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 60178 Stücke - Preis und Lieferfrist anzeigen
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1PS76SB70,135 |
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Nexperia USA Inc. |
Description: DIODE SCHOTTKY 70V 70MA SOD323 Voltage - DC Reverse (Vr) (Max): 70 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOD-323 Current - Average Rectified (Io): 70mA (DC) Capacitance @ Vr, F: 2pF @ 0V, 1MHz Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Schottky Mounting Type: Surface Mount Current - Reverse Leakage @ Vr: 10 µA @ 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) |
auf Bestellung 144588 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 179503 Stücke - Preis und Lieferfrist anzeigen
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PMEG2010BEV,115 |
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Nexperia USA Inc. |
Description: DIODE SCHOTTKY 20V 1A SOT666 Current - Reverse Leakage @ Vr: 200 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 20 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOT-666 Current - Average Rectified (Io): 1A (DC) Capacitance @ Vr, F: 80pF @ 1V, 1MHz Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 114610 Stücke - Preis und Lieferfrist anzeigen
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1PS76SB70,115 |
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Nexperia USA Inc. |
Description: DIODE SCHOTTKY 70V 70MA SOD323 Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOD-323 Current - Average Rectified (Io): 70mA (DC) Capacitance @ Vr, F: 2pF @ 0V, 1MHz Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Schottky Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 10 µA @ 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Voltage - DC Reverse (Vr) (Max): 70 V |
auf Bestellung 4 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 19089 Stücke - Preis und Lieferfrist anzeigen
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PMEG3010BEV,115 |
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Nexperia USA Inc. |
Description: DIODE SCHOTTKY 30V 1A SOT666 Current - Reverse Leakage @ Vr: 150 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOT-666 Current - Average Rectified (Io): 1A (DC) Capacitance @ Vr, F: 70pF @ 1V, 1MHz Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 141858 Stücke - Preis und Lieferfrist anzeigen
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PMEG3010BEA,115 |
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Nexperia USA Inc. |
Description: DIODE SCHOTTKY 30V 1A SOD323 Capacitance @ Vr, F: 70pF @ 1V, 1MHz Speed: Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 150 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active Diode Type: Schottky Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOD-323 Current - Average Rectified (Io): 1A (DC) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1479 Stücke - Preis und Lieferfrist anzeigen
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PSMN017-80PS,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 80V 50A TO220AB Power Dissipation (Max): 103W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Vgs(th) (Max) @ Id: 4V @ 1mA Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 1491 Stücke![]() Lieferzeit 21-28 Tag (e) |
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BUK763R9-60E,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 60V 100A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1800 Stücke - Preis und Lieferfrist anzeigen
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PSMN015-100B,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 75A D2PAK Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 100 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5508 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 75A D2PAK Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active |
auf Bestellung 607 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 5508 Stücke - Preis und Lieferfrist anzeigen
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BUK7608-55A,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 75A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 4352 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 0 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 254W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5414 Stücke - Preis und Lieferfrist anzeigen
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BUK9608-55A,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 75A D2PAK Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 6021 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 253W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V |
auf Bestellung 800 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 3218 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 75A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 6021 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±15V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 253W (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 941 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 3218 Stücke - Preis und Lieferfrist anzeigen
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BUK9575-100A,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 23A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 1704 pF @ 25 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 99W (Tc) Rds On (Max) @ Id, Vgs: 72mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3648 Stücke - Preis und Lieferfrist anzeigen
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BUK768R1-100E,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 25A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7380 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15 Stücke - Preis und Lieferfrist anzeigen
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PHB33NQ20T,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 200V 32.7A D2PAK Gate Charge (Qg) (Max) @ Vgs: 32.2 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 32.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V Mounting Type: Surface Mount Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2006 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: MOSFET N-CH 200V 32.7A D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 32.7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 32.2 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 701 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 2006 Stücke - Preis und Lieferfrist anzeigen
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PHP9NQ20T,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 200V 8.7A TO220AB Supplier Device Package: TO-220AB Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 88W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 959pF @ 25V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 4V @ 1mA Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Drain to Source Voltage (Vdss): 200V Technology: MOSFET (Metal Oxide) Package / Case: TO-220-3 FET Type: N-Channel Part Status: Obsolete Packaging: Tube |
auf Bestellung 403 Stücke![]() Lieferzeit 21-28 Tag (e) |
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PSMN3R4-30PL,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 3907 pF @ 12 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2.15V @ 1mA Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK7520-55A,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 54A TO220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 118W (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1592 pF @ 25 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK9518-55A,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 61A TO220AB Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±15V Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-220AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PSMN013-100PS,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 68A TO220AB Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) FET Type: N-Channel |
auf Bestellung 2207 Stücke![]() Lieferzeit 21-28 Tag (e) |
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BUK9606-55B,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 75A D2PAK Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 7565 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 258W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7865 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 75A D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 7565 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 258W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 130 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 7865 Stücke - Preis und Lieferfrist anzeigen
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BUK964R4-40B,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A D2PAK Drain to Source Voltage (Vdss): 40 V Input Capacitance (Ciss) (Max) @ Vds: 7124 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 254W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 18570 Stücke - Preis und Lieferfrist anzeigen
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BUK662R4-40C,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 120A D2PAK Vgs(th) (Max) @ Id: 2.8V @ 1mA Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 263W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 11334pF @ 25V Vgs (Max): ±16V Gate Charge (Qg) (Max) @ Vgs: 199nC @ 10V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
Nexperia USA Inc. |
Description: MOSFET N-CH 40V 120A D2PAK Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) Part Status: Last Time Buy Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 263W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 11334pF @ 25V Vgs (Max): ±16V Gate Charge (Qg) (Max) @ Vgs: 199nC @ 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) |
auf Bestellung 632 Stücke![]() Lieferzeit 21-28 Tag (e) |
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PSMN7R6-60PS,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 60V 92A TO220AB Mounting Type: Through Hole Package / Case: TO-220-3 Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Packaging: Tube Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 149W (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 92A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
auf Bestellung 4829 Stücke![]() Lieferzeit 21-28 Tag (e) |
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BUK962R8-60E,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 60V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V Power Dissipation (Max): 324W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V |
auf Bestellung 4000 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 8237 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: MOSFET N-CH 60V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V Power Dissipation (Max): 324W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V |
auf Bestellung 4319 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 8237 Stücke - Preis und Lieferfrist anzeigen
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BUK761R7-40E,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 120A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 324W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PSMN3R0-60BS,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 60V 100A D2PAK Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 8079pF @ 30V Power Dissipation (Max): 306W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Manufacturer: Nexperia USA Inc. Base Part Number: PSMN3R0 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 789 Stücke - Preis und Lieferfrist anzeigen
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BUK7609-75A,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 75V 75A D2PAK Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 230W (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Input Capacitance (Ciss) (Max) @ Vds: 6760 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PSMN030-150B,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 150V 55.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55.5A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BC856A,215 |
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Nexperia USA Inc. |
Description: TRANS PNP 65V 100MA TO236AB Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 65 V Part Status: Active Current - Collector (Ic) (Max): 100 mA DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: TO-236AB |
auf Bestellung 183000 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 1696268 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: TRANS PNP 65V 100MA TO236AB DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 65 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: TO-236AB Frequency - Transition: 100MHz |
auf Bestellung 185735 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 1696268 Stücke - Preis und Lieferfrist anzeigen
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BC857A,215 |
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Nexperia USA Inc. |
Description: TRANS PNP 45V 100MA TO236AB Current - Collector (Ic) (Max): 100 mA Supplier Device Package: TO-236AB Part Status: Active Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Power - Max: 250 mW Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Voltage - Collector Emitter Breakdown (Max): 45 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 202052 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: TRANS PNP 45V 100MA TO236AB Supplier Device Package: TO-236AB Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Power - Max: 250 mW Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Voltage - Collector Emitter Breakdown (Max): 45 V Part Status: Active Current - Collector (Ic) (Max): 100 mA |
auf Bestellung 2030 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 202052 Stücke - Preis und Lieferfrist anzeigen
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BC858B,215 |
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Nexperia USA Inc. |
Description: TRANS PNP 30V 100MA TO236AB Packaging: Tape & Reel (TR) Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 30 V Part Status: Active Current - Collector (Ic) (Max): 100 mA Supplier Device Package: TO-236AB Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 804295 Stücke - Preis und Lieferfrist anzeigen
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PMBT2222A,235 |
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Nexperia USA Inc. |
Description: TRANS NPN 40V 600MA TO236AB Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 600 mA Part Status: Active Supplier Device Package: TO-236AB Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 49965 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 60169 Stücke - Preis und Lieferfrist anzeigen
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BC857C,235 |
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Nexperia USA Inc. |
Description: TRANS PNP 45V 0.1A SOT23 Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 45 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: TO-236AB Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 11924 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 22393 Stücke - Preis und Lieferfrist anzeigen
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BC858B,235 |
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Nexperia USA Inc. |
Description: TRANS PNP 30V 100MA TO236AB Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: TO-236AB Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15255 Stücke - Preis und Lieferfrist anzeigen
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BC858B,215 |
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Nexperia USA Inc. |
Description: TRANS PNP 30V 100MA TO236AB Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: TO-236AB Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Packaging: Cut Tape (CT) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 |
auf Bestellung 2170 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 802125 Stücke - Preis und Lieferfrist anzeigen
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BC856,215 |
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Nexperia USA Inc. |
Description: TRANS PNP 65V 0.1A SOT23 Packaging: Tape & Reel (TR) Power - Max: 250 mW Voltage - Collector Emitter Breakdown (Max): 65 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: TO-236AB Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 87182 Stücke - Preis und Lieferfrist anzeigen
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PBSS4240XF |
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Nexperia USA Inc. |
Description: TRANS NPN 40V 2A SOT89 Package / Case: TO-243AA Packaging: Tape & Reel (TR) Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: SOT-89 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 140mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount |
auf Bestellung 8000 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 13859 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: TRANS NPN 40V 2A SOT89 DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V Package / Case: TO-243AA Packaging: Cut Tape (CT) Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 140mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: SOT-89 Frequency - Transition: 150MHz |
auf Bestellung 8787 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 13859 Stücke - Preis und Lieferfrist anzeigen
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PBSS5240XF |
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Nexperia USA Inc. |
Description: TRANS PNP 40V 2A SOT89 Current - Collector (Ic) (Max): 2 A Part Status: Active Supplier Device Package: SOT-89 Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 140mV @ 5mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 40 V Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
auf Bestellung 12000 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 15242 Stücke - Preis und Lieferfrist anzeigen
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74HCT7540D,118 |
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Nexperia USA Inc. |
Description: IC BUFFER INVERT 5.5V 20SO Logic Type: Buffer, Inverting Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Nexperia USA Inc. Base Part Number: 74HCT7540 Supplier Device Package: 20-SO Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 6mA, 6mA Output Type: 3-State Number of Bits per Element: 8 Number of Elements: 1 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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74HCT7540D,112 |
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Nexperia USA Inc. |
Description: IC BUFFER INVERT 5.5V 20SO Manufacturer: Nexperia USA Inc. Base Part Number: 74HCT7540 Supplier Device Package: 20-SO Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 6mA, 6mA Output Type: 3-State Number of Bits per Element: 8 Number of Elements: 1 Logic Type: Buffer, Inverting Packaging: Tube Part Status: Active |
auf Bestellung 122 Stücke![]() Lieferzeit 21-28 Tag (e) |
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TL431MFDT,215 |
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Nexperia USA Inc. |
Description: IC VREF SHUNT ADJ 2% TO236AB Voltage - Output (Min/Fixed): 2.495V Supplier Device Package: TO-236AB Operating Temperature: -40°C ~ 125°C (TA) Reference Type: Shunt Mounting Type: Surface Mount Output Type: Adjustable Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±2% Packaging: Tape & Reel (TR) Voltage - Output (Max): 36 V Current - Output: 100 mA Part Status: Active Current - Cathode: 1 mA |
auf Bestellung 9000 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 2034458 Stücke - Preis und Lieferfrist anzeigen
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BSH103BKR |
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Nexperia USA Inc. |
Description: BSH103BK - 30 V, N-CHANNEL TRENC Drain to Source Voltage (Vdss): 30 V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Part Status: Active Supplier Device Package: TO-236AB Vgs(th) (Max) @ Id: 1.25V @ 250µA Power Dissipation (Max): 330mW (Ta), 2.1W (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 79.3 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BAT854CW,115 |
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Nexperia USA Inc. |
Description: DIODE ARRAY SCHOTTKY 40V SOT323 Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature - Junction: 150°C (Max) Current - Reverse Leakage @ Vr: 500nA @ 25V Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA Current - Average Rectified (Io) (per Diode): 200mA (DC) Voltage - DC Reverse (Vr) (Max): 40V Diode Type: Schottky Diode Configuration: 1 Pair Common Cathode Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Base Part Number: BAT854CW Supplier Device Package: SOT-323 |
auf Bestellung 187439 Stücke![]() Lieferzeit 21-28 Tag (e) |
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Nexperia USA Inc. |
Description: DIODE ARRAY SCHOTTKY 40V SOT323 Packaging: Cut Tape (CT) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Current - Reverse Leakage @ Vr: 500 nA @ 25 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOT-323 Current - Average Rectified (Io) (per Diode): 200mA (DC) Diode Configuration: 1 Pair Common Cathode Speed: Small Signal =< 200mA (Io), Any Speed Diode Type: Schottky |
auf Bestellung 20 Stücke![]() Lieferzeit 21-28 Tag (e) |
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PMEG2020EPK,315 |
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Nexperia USA Inc. |
Description: DIODE SCHOTTKY 20V 2A 2DFN Speed: Fast Recovery =< 500ns, > 200mA (Io) Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A Current - Average Rectified (Io): 2A Voltage - DC Reverse (Vr) (Max): 20V Diode Type: Schottky Base Part Number: PMEG2020 Operating Temperature - Junction: 150°C (Max) Supplier Device Package: DFN1608D-2 Package / Case: 2-XDFN Part Status: Active Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $) Mounting Type: Surface Mount Capacitance @ Vr, F: 120pF @ 1V, 1MHz Current - Reverse Leakage @ Vr: 900µA @ 20V Reverse Recovery Time (trr): 5ns |
auf Bestellung 247407 Stücke![]() Lieferzeit 21-28 Tag (e) |
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Nexperia USA Inc. |
Description: DIODE SCHOTTKY 20V 2A DFN1608D-2 Current - Reverse Leakage @ Vr: 900 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 20 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: DFN1608D-2 Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 120pF @ 1V, 1MHz Reverse Recovery Time (trr): 5 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Surface Mount Package / Case: 2-XDFN Packaging: Cut Tape (CT) |
auf Bestellung 221987 Stücke![]() Lieferzeit 21-28 Tag (e) |
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Nexperia USA Inc. |
Description: DIODE SCHOTTKY 20V 2A DFN1608D-2 Capacitance @ Vr, F: 120pF @ 1V, 1MHz Current - Reverse Leakage @ Vr: 900 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 20 V Part Status: Active Supplier Device Package: DFN1608D-2 Operating Temperature - Junction: 150°C (Max) Current - Average Rectified (Io): 2A Reverse Recovery Time (trr): 5 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Diode Type: Schottky Mounting Type: Surface Mount Package / Case: 2-XDFN Packaging: Tape & Reel (TR) |
auf Bestellung 216000 Stücke![]() Lieferzeit 21-28 Tag (e) |
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BUK7610-100B,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6773 pF @ 25 V |
auf Bestellung 1600 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 420 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 75A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6773 pF @ 25 V |
auf Bestellung 1863 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 420 Stücke - Preis und Lieferfrist anzeigen
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BUK964R7-80E,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 80V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V Power Dissipation (Max): 324W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 92.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 15340 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
Nexperia USA Inc. |
Description: MOSFET N-CH 80V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V Power Dissipation (Max): 324W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 92.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 15340 pF @ 25 V |
auf Bestellung 755 Stücke![]() Lieferzeit 21-28 Tag (e) |
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PSMN057-200B,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 200V 39A D2PAK Drain to Source Voltage (Vdss): 200 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
auf Bestellung 1600 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 2400 Stücke - Preis und Lieferfrist anzeigen
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BUK764R0-55B,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 75A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 6776 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
auf Bestellung 3200 Stücke![]() Lieferzeit 21-28 Tag (e) |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 75A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 6776 pF @ 25 V Drain to Source Voltage (Vdss): 55 V Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 300W (Tc) Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 3330 Stücke![]() Lieferzeit 21-28 Tag (e) |
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BUK763R1-40B,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A D2PAK Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max) @ Vds: 6808pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13044 Stücke - Preis und Lieferfrist anzeigen
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PSMNR90-30BL,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 120A D2PAK Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Tape & Reel (TR) Manufacturer: Nexperia USA Inc. Base Part Number: PSMNR90 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 306W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 14850pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 243nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 4000 Stücke![]() Lieferzeit 21-28 Tag (e) |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 120A D2PAK Base Part Number: PSMNR90 Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 306W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 14850pF @ 15V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 243nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 1mA Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drain to Source Voltage (Vdss): 30V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Active Packaging: Cut Tape (CT) Manufacturer: Nexperia USA Inc. |
auf Bestellung 4439 Stücke![]() Lieferzeit 21-28 Tag (e) |
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PSMN1R7-60BS,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 60V 120A D2PAK Power Dissipation (Max): 306W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 9997 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PSMN8R7-80PS,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 80V 90A TO220AB Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 170W (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 89 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 8000 Stücke - Preis und Lieferfrist anzeigen
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BUK962R5-60E,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 60V 120A D2PAK Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.1V @ 1mA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 17450 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±10V Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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PHP23NQ11T,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 110V 23A TO220AB Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 110 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 23A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 7432 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 7180 Stücke - Preis und Lieferfrist anzeigen
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BUK7508-40B,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A TO220AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2689 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 18000 Stücke - Preis und Lieferfrist anzeigen
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BUK9610-100B,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 75A D2PAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Last Time Buy Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 300W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 11045pF @ 25V Vgs (Max): ±15V Gate Charge (Qg) (Max) @ Vgs: 86nC @ 5V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 9.7mOhm @ 25A, 10V |
auf Bestellung 800 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 10995 Stücke - Preis und Lieferfrist anzeigen
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Nexperia USA Inc. |
Description: MOSFET N-CH 100V 75A D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 300W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 11045pF @ 25V Vgs (Max): ±15V Gate Charge (Qg) (Max) @ Vgs: 86nC @ 5V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 9.7mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drain to Source Voltage (Vdss): 100V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Last Time Buy Packaging: Cut Tape (CT) |
auf Bestellung 1166 Stücke![]() Lieferzeit 21-28 Tag (e)
auf Bestellung 10995 Stücke - Preis und Lieferfrist anzeigen
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BUK963R2-40B,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 100A D2PAK Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 93.4nC @ 5V Vgs (Max): ±15V Input Capacitance (Ciss) (Max) @ Vds: 10502pF @ 25V Power Dissipation (Max): 300W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5169 Stücke - Preis und Lieferfrist anzeigen
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BUK7511-55B,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 55V 75A TO220AB Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Input Capacitance (Ciss) (Max) @ Vds: 2604 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220AB Package / Case: TO-220-3 Packaging: Tube Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 157W (Tc) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2208 Stücke - Preis und Lieferfrist anzeigen
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BUK9509-40B,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 40V 75A TO220AB Package / Case: TO-220-3 Supplier Device Package: TO-220AB Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 157W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V Vgs (Max): ±15V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V Vgs(th) (Max) @ Id: 2V @ 1mA Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drain to Source Voltage (Vdss): 40V Technology: MOSFET (Metal Oxide) FET Type: N-Channel Part Status: Obsolete Packaging: Tube |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen | |||||||||||||||
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BUK9507-30B,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 75A TO220AB Vgs (Max): ±15V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2V @ 1mA Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 3373 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Drain to Source Voltage (Vdss): 30 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11973 Stücke - Preis und Lieferfrist anzeigen
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PSMN2R8-80BS,118 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 80V 120A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 306W (Tc) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3070 Stücke - Preis und Lieferfrist anzeigen
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BUK7507-30B,127 |
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Nexperia USA Inc. |
Description: MOSFET N-CH 30V 75A TO220AB Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 157W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2427 pF @ 25 V |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4611 Stücke - Preis und Lieferfrist anzeigen
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BZV90-C2V7,115 |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 2.7V 1.5W SOT223
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Reverse Leakage @ Vr: 20µA @ 1V
Tolerance: ±5%
Power - Max: 1.5W
Impedance (Max) (Zzt): 100 Ohms
auf Bestellung 3490 Stücke Description: DIODE ZENER 2.7V 1.5W SOT223
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Reverse Leakage @ Vr: 20µA @ 1V
Tolerance: ±5%
Power - Max: 1.5W
Impedance (Max) (Zzt): 100 Ohms

Lieferzeit 21-28 Tag (e)
auf Bestellung 1464 Stücke - Preis und Lieferfrist anzeigen
BZV90-C27,115 |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 27V 1.5W SOT223
Package / Case: TO-261-4, TO-261AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Power - Max: 1.5 W
Part Status: Active
Supplier Device Package: SOT-223
Impedance (Max) (Zzt): 80 Ohms
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
auf Bestellung 8000 Stücke Description: DIODE ZENER 27V 1.5W SOT223
Package / Case: TO-261-4, TO-261AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Power - Max: 1.5 W
Part Status: Active
Supplier Device Package: SOT-223
Impedance (Max) (Zzt): 80 Ohms
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V

Lieferzeit 21-28 Tag (e)
auf Bestellung 24088 Stücke - Preis und Lieferfrist anzeigen
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BZV90-C27,115 |
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Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 27V 1.5W SOT223
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Power - Max: 1.5 W
Part Status: Active
Package / Case: TO-261-4, TO-261AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-223
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 150°C
auf Bestellung 10364 Stücke Description: DIODE ZENER 27V 1.5W SOT223
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Power - Max: 1.5 W
Part Status: Active
Package / Case: TO-261-4, TO-261AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-223
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 150°C

Lieferzeit 21-28 Tag (e)
auf Bestellung 21724 Stücke - Preis und Lieferfrist anzeigen
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BAS20,215 |
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Hersteller: Nexperia USA Inc.
Description: DIODE GEN PURP 150V 200MA SOT23
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-236AB
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
auf Bestellung 23764 Stücke Description: DIODE GEN PURP 150V 200MA SOT23
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-236AB
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed

Lieferzeit 21-28 Tag (e)
auf Bestellung 51406 Stücke - Preis und Lieferfrist anzeigen
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BAS19,235 |
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Hersteller: Nexperia USA Inc.
Description: DIODE GP 100V 200MA TO236AB
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-236AB
Current - Average Rectified (Io): 200mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE GP 100V 200MA TO236AB
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-236AB
Current - Average Rectified (Io): 200mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
BAS19,215 |
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Hersteller: Nexperia USA Inc.
Description: DIODE GP 100V 200MA TO236AB
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-236AB
Current - Average Rectified (Io): 200mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
auf Bestellung 36000 Stücke Description: DIODE GP 100V 200MA TO236AB
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-236AB
Current - Average Rectified (Io): 200mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard

Lieferzeit 21-28 Tag (e)
auf Bestellung 78327 Stücke - Preis und Lieferfrist anzeigen
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BAS19,215 |
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Hersteller: Nexperia USA Inc.
Description: DIODE GP 100V 200MA TO236AB
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-236AB
Current - Average Rectified (Io): 200mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
auf Bestellung 36630 Stücke Description: DIODE GP 100V 200MA TO236AB
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-236AB
Current - Average Rectified (Io): 200mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard

Lieferzeit 21-28 Tag (e)
auf Bestellung 77697 Stücke - Preis und Lieferfrist anzeigen
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BAS40H,115 |
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Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 120MA SOD123F
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 120mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
auf Bestellung 48000 Stücke Description: DIODE SCHOTTKY 40V 120MA SOD123F
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 120mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)

Lieferzeit 21-28 Tag (e)
auf Bestellung 50590 Stücke - Preis und Lieferfrist anzeigen
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BAS40H,115 |
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Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 120MA SOD123F
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Average Rectified (Io): 120mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Supplier Device Package: SOD-123F
auf Bestellung 50588 Stücke Description: DIODE SCHOTTKY 40V 120MA SOD123F
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Average Rectified (Io): 120mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Supplier Device Package: SOD-123F

Lieferzeit 21-28 Tag (e)
auf Bestellung 48002 Stücke - Preis und Lieferfrist anzeigen
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BAS116H,115 |
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Hersteller: Nexperia USA Inc.
Description: DIODE GEN PURP 75V 215MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA (DC)
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
auf Bestellung 6000 Stücke Description: DIODE GEN PURP 75V 215MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA (DC)
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V

Lieferzeit 21-28 Tag (e)
auf Bestellung 79486 Stücke - Preis und Lieferfrist anzeigen
|
BAS116H,115 |
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Hersteller: Nexperia USA Inc.
Description: DIODE GEN PURP 75V 215MA SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA (DC)
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
auf Bestellung 11900 Stücke Description: DIODE GEN PURP 75V 215MA SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA (DC)
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V

Lieferzeit 21-28 Tag (e)
auf Bestellung 73586 Stücke - Preis und Lieferfrist anzeigen
|
1PS76SB40,135 |
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Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 120MA SOD323
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 120mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
auf Bestellung 31263 Stücke Description: DIODE SCHOTTKY 40V 120MA SOD323
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 120mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V

Lieferzeit 21-28 Tag (e)
auf Bestellung 60178 Stücke - Preis und Lieferfrist anzeigen
|
1PS76SB70,135 |
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Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 70V 70MA SOD323
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 70mA (DC)
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
auf Bestellung 144588 Stücke Description: DIODE SCHOTTKY 70V 70MA SOD323
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 70mA (DC)
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)

Lieferzeit 21-28 Tag (e)
auf Bestellung 179503 Stücke - Preis und Lieferfrist anzeigen
|
PMEG2010BEV,115 |
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Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 20V 1A SOT666
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-666
Current - Average Rectified (Io): 1A (DC)
Capacitance @ Vr, F: 80pF @ 1V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 20V 1A SOT666
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-666
Current - Average Rectified (Io): 1A (DC)
Capacitance @ Vr, F: 80pF @ 1V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
auf Bestellung 114610 Stücke - Preis und Lieferfrist anzeigen
1PS76SB70,115 |
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Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 70V 70MA SOD323
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 70mA (DC)
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
auf Bestellung 4 Stücke Description: DIODE SCHOTTKY 70V 70MA SOD323
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 70mA (DC)
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V

Lieferzeit 21-28 Tag (e)
auf Bestellung 19089 Stücke - Preis und Lieferfrist anzeigen
PMEG3010BEV,115 |
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Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 1A SOT666
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-666
Current - Average Rectified (Io): 1A (DC)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 30V 1A SOT666
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-666
Current - Average Rectified (Io): 1A (DC)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 141858 Stücke - Preis und Lieferfrist anzeigen
PMEG3010BEA,115 |
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Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 1A SOD323
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 1A (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: DIODE SCHOTTKY 30V 1A SOD323
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 1A (DC)
auf Bestellung 1479 Stücke - Preis und Lieferfrist anzeigen
PSMN017-80PS,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 50A TO220AB
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id: 4V @ 1mA
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1491 Stücke Description: MOSFET N-CH 80V 50A TO220AB
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id: 4V @ 1mA
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube

Lieferzeit 21-28 Tag (e)
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BUK763R9-60E,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 1800 Stücke - Preis und Lieferfrist anzeigen
PSMN015-100B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 75A D2PAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 6115 Stücke - Preis und Lieferfrist anzeigen
PSMN015-100B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 607 Stücke Description: MOSFET N-CH 100V 75A D2PAK
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active

Lieferzeit 21-28 Tag (e)
auf Bestellung 5508 Stücke - Preis und Lieferfrist anzeigen
|
BUK7608-55A,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4352 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 0 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 254W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4352 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 0 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 254W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 5414 Stücke - Preis und Lieferfrist anzeigen
BUK9608-55A,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6021 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 253W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
auf Bestellung 800 Stücke Description: MOSFET N-CH 55V 75A D2PAK
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6021 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 253W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V

Lieferzeit 21-28 Tag (e)
auf Bestellung 4159 Stücke - Preis und Lieferfrist anzeigen
|
BUK9608-55A,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 6021 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 253W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 941 Stücke Description: MOSFET N-CH 55V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 6021 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 253W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)

Lieferzeit 21-28 Tag (e)
auf Bestellung 4018 Stücke - Preis und Lieferfrist anzeigen
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BUK9575-100A,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 23A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1704 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 99W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 23A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1704 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 99W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 3648 Stücke - Preis und Lieferfrist anzeigen
BUK768R1-100E,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7380 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 100V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7380 pF @ 25 V
auf Bestellung 15 Stücke - Preis und Lieferfrist anzeigen
PHB33NQ20T,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 200V 32.7A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 32.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 200V 32.7A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 32.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 2707 Stücke - Preis und Lieferfrist anzeigen
PHB33NQ20T,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 200V 32.7A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 701 Stücke Description: MOSFET N-CH 200V 32.7A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)

Lieferzeit 21-28 Tag (e)
auf Bestellung 2006 Stücke - Preis und Lieferfrist anzeigen
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PHP9NQ20T,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 200V 8.7A TO220AB
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 959pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
auf Bestellung 403 Stücke Description: MOSFET N-CH 200V 8.7A TO220AB
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 959pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube

Lieferzeit 21-28 Tag (e)
PSMN3R4-30PL,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3907 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 100A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3907 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
BUK7520-55A,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 54A TO220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 118W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1592 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 54A TO220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 118W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1592 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
BUK9518-55A,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 61A TO220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 61A TO220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
PSMN013-100PS,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 68A TO220AB
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
auf Bestellung 2207 Stücke Description: MOSFET N-CH 100V 68A TO220AB
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel

Lieferzeit 21-28 Tag (e)
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BUK9606-55B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7565 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 258W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 75A D2PAK
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7565 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 258W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 7995 Stücke - Preis und Lieferfrist anzeigen
BUK9606-55B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7565 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 258W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 130 Stücke Description: MOSFET N-CH 55V 75A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7565 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 258W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount

Lieferzeit 21-28 Tag (e)
auf Bestellung 7865 Stücke - Preis und Lieferfrist anzeigen
BUK964R4-40B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7124 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 254W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 75A D2PAK
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7124 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 254W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 18570 Stücke - Preis und Lieferfrist anzeigen
BUK662R4-40C,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 263W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11334pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 199nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 120A D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 263W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11334pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 199nC @ 10V
auf Bestellung 632 Stücke - Preis und Lieferfrist anzeigen
BUK662R4-40C,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Part Status: Last Time Buy
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 263W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11334pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 199nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
auf Bestellung 632 Stücke Description: MOSFET N-CH 40V 120A D2PAK
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Part Status: Last Time Buy
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 263W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11334pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 199nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)

Lieferzeit 21-28 Tag (e)
PSMN7R6-60PS,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 92A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 149W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 4829 Stücke Description: MOSFET N-CH 60V 92A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 149W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)

Lieferzeit 21-28 Tag (e)
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BUK962R8-60E,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V
auf Bestellung 4000 Stücke Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V

Lieferzeit 21-28 Tag (e)
auf Bestellung 12556 Stücke - Preis und Lieferfrist anzeigen
BUK962R8-60E,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V
auf Bestellung 4319 Stücke Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V

Lieferzeit 21-28 Tag (e)
auf Bestellung 12237 Stücke - Preis und Lieferfrist anzeigen
BUK761R7-40E,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 324W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 324W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
PSMN3R0-60BS,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8079pF @ 30V
Power Dissipation (Max): 306W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Manufacturer: Nexperia USA Inc.
Base Part Number: PSMN3R0
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8079pF @ 30V
Power Dissipation (Max): 306W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Manufacturer: Nexperia USA Inc.
Base Part Number: PSMN3R0
auf Bestellung 789 Stücke - Preis und Lieferfrist anzeigen
BUK7609-75A,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A D2PAK
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Input Capacitance (Ciss) (Max) @ Vds: 6760 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 75V 75A D2PAK
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Input Capacitance (Ciss) (Max) @ Vds: 6760 pF @ 25 V
PSMN030-150B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 150V 55.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55.5A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 150V 55.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55.5A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
BC856A,215 |
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Hersteller: Nexperia USA Inc.
Description: TRANS PNP 65V 100MA TO236AB
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
auf Bestellung 183000 Stücke Description: TRANS PNP 65V 100MA TO236AB
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB

Lieferzeit 21-28 Tag (e)
auf Bestellung 1882003 Stücke - Preis und Lieferfrist anzeigen
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BC856A,215 |
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Hersteller: Nexperia USA Inc.
Description: TRANS PNP 65V 100MA TO236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
auf Bestellung 185735 Stücke Description: TRANS PNP 65V 100MA TO236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz

Lieferzeit 21-28 Tag (e)
auf Bestellung 1879268 Stücke - Preis und Lieferfrist anzeigen
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BC857A,215 |
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Hersteller: Nexperia USA Inc.
Description: TRANS PNP 45V 100MA TO236AB
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-236AB
Part Status: Active
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Power - Max: 250 mW
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max): 45 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS PNP 45V 100MA TO236AB
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-236AB
Part Status: Active
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Power - Max: 250 mW
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max): 45 V
auf Bestellung 204082 Stücke - Preis und Lieferfrist anzeigen
BC857A,215 |
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Hersteller: Nexperia USA Inc.
Description: TRANS PNP 45V 100MA TO236AB
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Power - Max: 250 mW
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Voltage - Collector Emitter Breakdown (Max): 45 V
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 2030 Stücke Description: TRANS PNP 45V 100MA TO236AB
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Power - Max: 250 mW
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Voltage - Collector Emitter Breakdown (Max): 45 V
Part Status: Active
Current - Collector (Ic) (Max): 100 mA

Lieferzeit 21-28 Tag (e)
auf Bestellung 202052 Stücke - Preis und Lieferfrist anzeigen
|
BC858B,215 |
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Hersteller: Nexperia USA Inc.
Description: TRANS PNP 30V 100MA TO236AB
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS PNP 30V 100MA TO236AB
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 804295 Stücke - Preis und Lieferfrist anzeigen
PMBT2222A,235 |
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Hersteller: Nexperia USA Inc.
Description: TRANS NPN 40V 600MA TO236AB
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 49965 Stücke Description: TRANS NPN 40V 600MA TO236AB
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)

Lieferzeit 21-28 Tag (e)
auf Bestellung 60169 Stücke - Preis und Lieferfrist anzeigen
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BC857C,235 |
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Hersteller: Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A SOT23
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 11924 Stücke Description: TRANS PNP 45V 0.1A SOT23
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)

Lieferzeit 21-28 Tag (e)
auf Bestellung 22393 Stücke - Preis und Lieferfrist anzeigen
|
BC858B,235 |
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Hersteller: Nexperia USA Inc.
Description: TRANS PNP 30V 100MA TO236AB
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS PNP 30V 100MA TO236AB
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
auf Bestellung 15255 Stücke - Preis und Lieferfrist anzeigen
BC858B,215 |
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Hersteller: Nexperia USA Inc.
Description: TRANS PNP 30V 100MA TO236AB
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Packaging: Cut Tape (CT)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 2170 Stücke Description: TRANS PNP 30V 100MA TO236AB
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Packaging: Cut Tape (CT)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3

Lieferzeit 21-28 Tag (e)
auf Bestellung 802125 Stücke - Preis und Lieferfrist anzeigen
|
BC856,215 |
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Hersteller: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A SOT23
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: TRANS PNP 65V 0.1A SOT23
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 87182 Stücke - Preis und Lieferfrist anzeigen
PBSS4240XF |
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SOT89.jpg)
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 40V 2A SOT89
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
auf Bestellung 8000 Stücke Description: TRANS NPN 40V 2A SOT89
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount

Lieferzeit 21-28 Tag (e)
auf Bestellung 22646 Stücke - Preis und Lieferfrist anzeigen
|
PBSS4240XF |
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SOT89.jpg)
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 40V 2A SOT89
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 150MHz
auf Bestellung 8787 Stücke Description: TRANS NPN 40V 2A SOT89
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 150MHz

Lieferzeit 21-28 Tag (e)
auf Bestellung 21859 Stücke - Preis und Lieferfrist anzeigen
|
PBSS5240XF |
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SOT89.jpg)
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 40V 2A SOT89
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke Description: TRANS PNP 40V 2A SOT89
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)

Lieferzeit 21-28 Tag (e)
auf Bestellung 15242 Stücke - Preis und Lieferfrist anzeigen
|
74HCT7540D,118 |
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Hersteller: Nexperia USA Inc.
Description: IC BUFFER INVERT 5.5V 20SO
Logic Type: Buffer, Inverting
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: 74HCT7540
Supplier Device Package: 20-SO
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 6mA, 6mA
Output Type: 3-State
Number of Bits per Element: 8
Number of Elements: 1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: IC BUFFER INVERT 5.5V 20SO
Logic Type: Buffer, Inverting
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: 74HCT7540
Supplier Device Package: 20-SO
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 6mA, 6mA
Output Type: 3-State
Number of Bits per Element: 8
Number of Elements: 1
74HCT7540D,112 |
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Hersteller: Nexperia USA Inc.
Description: IC BUFFER INVERT 5.5V 20SO
Manufacturer: Nexperia USA Inc.
Base Part Number: 74HCT7540
Supplier Device Package: 20-SO
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 6mA, 6mA
Output Type: 3-State
Number of Bits per Element: 8
Number of Elements: 1
Logic Type: Buffer, Inverting
Packaging: Tube
Part Status: Active
auf Bestellung 122 Stücke Description: IC BUFFER INVERT 5.5V 20SO
Manufacturer: Nexperia USA Inc.
Base Part Number: 74HCT7540
Supplier Device Package: 20-SO
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 6mA, 6mA
Output Type: 3-State
Number of Bits per Element: 8
Number of Elements: 1
Logic Type: Buffer, Inverting
Packaging: Tube
Part Status: Active

Lieferzeit 21-28 Tag (e)
TL431MFDT,215 |
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Hersteller: Nexperia USA Inc.
Description: IC VREF SHUNT ADJ 2% TO236AB
Voltage - Output (Min/Fixed): 2.495V
Supplier Device Package: TO-236AB
Operating Temperature: -40°C ~ 125°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Voltage - Output (Max): 36 V
Current - Output: 100 mA
Part Status: Active
Current - Cathode: 1 mA
auf Bestellung 9000 Stücke Description: IC VREF SHUNT ADJ 2% TO236AB
Voltage - Output (Min/Fixed): 2.495V
Supplier Device Package: TO-236AB
Operating Temperature: -40°C ~ 125°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Voltage - Output (Max): 36 V
Current - Output: 100 mA
Part Status: Active
Current - Cathode: 1 mA

Lieferzeit 21-28 Tag (e)
auf Bestellung 2034458 Stücke - Preis und Lieferfrist anzeigen
|
BSH103BKR |
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Hersteller: Nexperia USA Inc.
Description: BSH103BK - 30 V, N-CHANNEL TRENC
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 330mW (Ta), 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 79.3 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: BSH103BK - 30 V, N-CHANNEL TRENC
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 330mW (Ta), 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 79.3 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
BAT854CW,115 |
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Hersteller: Nexperia USA Inc.
Description: DIODE ARRAY SCHOTTKY 40V SOT323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature - Junction: 150°C (Max)
Current - Reverse Leakage @ Vr: 500nA @ 25V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: BAT854CW
Supplier Device Package: SOT-323
auf Bestellung 187439 Stücke Description: DIODE ARRAY SCHOTTKY 40V SOT323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature - Junction: 150°C (Max)
Current - Reverse Leakage @ Vr: 500nA @ 25V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: BAT854CW
Supplier Device Package: SOT-323

Lieferzeit 21-28 Tag (e)
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
BAT854CW,115 |
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Hersteller: Nexperia USA Inc.
Description: DIODE ARRAY SCHOTTKY 40V SOT323
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-323
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
auf Bestellung 20 Stücke Description: DIODE ARRAY SCHOTTKY 40V SOT323
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-323
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky

Lieferzeit 21-28 Tag (e)
auf Bestellung 187439 Stücke - Preis und Lieferfrist anzeigen
PMEG2020EPK,315 |
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Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 20V 2A 2DFN
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Base Part Number: PMEG2020
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1608D-2
Package / Case: 2-XDFN
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 900µA @ 20V
Reverse Recovery Time (trr): 5ns
auf Bestellung 247407 Stücke Description: DIODE SCHOTTKY 20V 2A 2DFN
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Base Part Number: PMEG2020
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1608D-2
Package / Case: 2-XDFN
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 900µA @ 20V
Reverse Recovery Time (trr): 5ns

Lieferzeit 21-28 Tag (e)
auf Bestellung 437987 Stücke - Preis und Lieferfrist anzeigen
PMEG2020EPK,315 |
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Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 20V 2A DFN1608D-2
Current - Reverse Leakage @ Vr: 900 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1608D-2
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
auf Bestellung 221987 Stücke Description: DIODE SCHOTTKY 20V 2A DFN1608D-2
Current - Reverse Leakage @ Vr: 900 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1608D-2
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)

Lieferzeit 21-28 Tag (e)
auf Bestellung 463407 Stücke - Preis und Lieferfrist anzeigen
|
PMEG2020EPK,315 |
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Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 20V 2A DFN1608D-2
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 900 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
auf Bestellung 216000 Stücke Description: DIODE SCHOTTKY 20V 2A DFN1608D-2
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 900 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)

Lieferzeit 21-28 Tag (e)
auf Bestellung 469394 Stücke - Preis und Lieferfrist anzeigen
|
BUK7610-100B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6773 pF @ 25 V
auf Bestellung 1600 Stücke Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6773 pF @ 25 V

Lieferzeit 21-28 Tag (e)
auf Bestellung 2283 Stücke - Preis und Lieferfrist anzeigen
|
BUK7610-100B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6773 pF @ 25 V
auf Bestellung 1863 Stücke Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6773 pF @ 25 V

Lieferzeit 21-28 Tag (e)
auf Bestellung 2020 Stücke - Preis und Lieferfrist anzeigen
|
BUK964R7-80E,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15340 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15340 pF @ 25 V
auf Bestellung 755 Stücke - Preis und Lieferfrist anzeigen
BUK964R7-80E,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15340 pF @ 25 V
auf Bestellung 755 Stücke Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15340 pF @ 25 V

Lieferzeit 21-28 Tag (e)
PSMN057-200B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 200V 39A D2PAK
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 1600 Stücke Description: MOSFET N-CH 200V 39A D2PAK
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)

Lieferzeit 21-28 Tag (e)
auf Bestellung 2400 Stücke - Preis und Lieferfrist anzeigen
|
BUK764R0-55B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 6776 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 3200 Stücke Description: MOSFET N-CH 55V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 6776 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)

Lieferzeit 21-28 Tag (e)
auf Bestellung 3330 Stücke - Preis und Lieferfrist anzeigen
|
BUK764R0-55B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 6776 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 3330 Stücke Description: MOSFET N-CH 55V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 6776 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)

Lieferzeit 21-28 Tag (e)
auf Bestellung 3200 Stücke - Preis und Lieferfrist anzeigen
|
BUK763R1-40B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6808pF @ 25V
Power Dissipation (Max): 300W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6808pF @ 25V
Power Dissipation (Max): 300W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 13044 Stücke - Preis und Lieferfrist anzeigen
PSMNR90-30BL,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A D2PAK
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: PSMNR90
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 306W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14850pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 243nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 4000 Stücke Description: MOSFET N-CH 30V 120A D2PAK
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: PSMNR90
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 306W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14850pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 243nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Lieferzeit 21-28 Tag (e)
auf Bestellung 4439 Stücke - Preis und Lieferfrist anzeigen
PSMNR90-30BL,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A D2PAK
Base Part Number: PSMNR90
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 306W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14850pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 243nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Nexperia USA Inc.
auf Bestellung 4439 Stücke Description: MOSFET N-CH 30V 120A D2PAK
Base Part Number: PSMNR90
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 306W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14850pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 243nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Nexperia USA Inc.

Lieferzeit 21-28 Tag (e)
auf Bestellung 4000 Stücke - Preis und Lieferfrist anzeigen
PSMN1R7-60BS,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9997 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 120A D2PAK
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9997 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
PSMN8R7-80PS,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 90A TO220AB
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 89 Stücke Description: MOSFET N-CH 80V 90A TO220AB
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)

Lieferzeit 21-28 Tag (e)
auf Bestellung 8000 Stücke - Preis und Lieferfrist anzeigen
|
BUK962R5-60E,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 17450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 60V 120A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 17450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PHP23NQ11T,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 110V 23A TO220AB
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 110 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 7432 Stücke Description: MOSFET N-CH 110V 23A TO220AB
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 110 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)

Lieferzeit 21-28 Tag (e)
auf Bestellung 7180 Stücke - Preis und Lieferfrist anzeigen
|
BUK7508-40B,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2689 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2689 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
auf Bestellung 18000 Stücke - Preis und Lieferfrist anzeigen
BUK9610-100B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11045pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 25A, 10V
auf Bestellung 800 Stücke Description: MOSFET N-CH 100V 75A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11045pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 25A, 10V

Lieferzeit 21-28 Tag (e)
auf Bestellung 12161 Stücke - Preis und Lieferfrist anzeigen
BUK9610-100B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11045pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Cut Tape (CT)
auf Bestellung 1166 Stücke Description: MOSFET N-CH 100V 75A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11045pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Cut Tape (CT)

Lieferzeit 21-28 Tag (e)
auf Bestellung 11795 Stücke - Preis und Lieferfrist anzeigen
BUK963R2-40B,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 93.4nC @ 5V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 10502pF @ 25V
Power Dissipation (Max): 300W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 100A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 93.4nC @ 5V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 10502pF @ 25V
Power Dissipation (Max): 300W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
auf Bestellung 5169 Stücke - Preis und Lieferfrist anzeigen
BUK7511-55B,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A TO220AB
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 2604 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 157W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 55V 75A TO220AB
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 2604 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 157W (Tc)
auf Bestellung 2208 Stücke - Preis und Lieferfrist anzeigen
BUK9509-40B,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A TO220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 157W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 40V 75A TO220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 157W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
BUK9507-30B,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 75A TO220AB
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3373 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 75A TO220AB
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3373 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 11973 Stücke - Preis und Lieferfrist anzeigen
PSMN2R8-80BS,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 306W (Tc)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 80V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 306W (Tc)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 3070 Stücke - Preis und Lieferfrist anzeigen
BUK7507-30B,127 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 75A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2427 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügenDescription: MOSFET N-CH 30V 75A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2427 pF @ 25 V
auf Bestellung 4611 Stücke - Preis und Lieferfrist anzeigen
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