Die Produkte nexperia usa inc.

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Foto Bezeichnung Tech.inf. Hersteller Beschreibung Informationen zu Lagerverfügbarkeit und Lieferzeiten
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BZV90-C2V7,115 BZV90-C2V7,115 BZV90.pdf Nexperia USA Inc. Description: DIODE ZENER 2.7V 1.5W SOT223
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Reverse Leakage @ Vr: 20µA @ 1V
Tolerance: ±5%
Power - Max: 1.5W
Impedance (Max) (Zzt): 100 Ohms
auf Bestellung 3490 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1464 Stücke - Preis und Lieferfrist anzeigen
BZV90-C27,115 BZV90-C27,115 BZV90.pdf Nexperia USA Inc. Description: DIODE ZENER 27V 1.5W SOT223
Package / Case: TO-261-4, TO-261AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Power - Max: 1.5 W
Part Status: Active
Supplier Device Package: SOT-223
Impedance (Max) (Zzt): 80 Ohms
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
auf Bestellung 8000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13724 Stücke - Preis und Lieferfrist anzeigen
1000+ 0.57 EUR
2000+ 0.52 EUR
5000+ 0.49 EUR
Nexperia USA Inc. Description: DIODE ZENER 27V 1.5W SOT223
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Power - Max: 1.5 W
Part Status: Active
Package / Case: TO-261-4, TO-261AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-223
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 150°C
auf Bestellung 10364 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13724 Stücke - Preis und Lieferfrist anzeigen
18+ 1.48 EUR
21+ 1.26 EUR
100+ 0.94 EUR
500+ 0.74 EUR
BAS20,215 BAS20,215 BAS20.pdf Nexperia USA Inc. Description: DIODE GEN PURP 150V 200MA SOT23
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-236AB
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
auf Bestellung 23764 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 51406 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
76+ 0.35 EUR
138+ 0.19 EUR
500+ 0.12 EUR
1000+ 0.079 EUR
BAS19,235 BAS19,235 BAS19.pdf Nexperia USA Inc. Description: DIODE GP 100V 200MA TO236AB
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-236AB
Current - Average Rectified (Io): 200mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS19,215 BAS19,215 BAS19.pdf Nexperia USA Inc. Description: DIODE GP 100V 200MA TO236AB
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-236AB
Current - Average Rectified (Io): 200mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
auf Bestellung 36000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 41697 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.067 EUR
6000+ 0.061 EUR
15000+ 0.053 EUR
30000+ 0.048 EUR
Nexperia USA Inc. Description: DIODE GP 100V 200MA TO236AB
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-236AB
Current - Average Rectified (Io): 200mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
auf Bestellung 36630 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 41697 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
76+ 0.35 EUR
138+ 0.19 EUR
500+ 0.12 EUR
1000+ 0.079 EUR
BAS40H,115 BAS40H,115 PHGL-S-A0000721047-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: DIODE SCHOTTKY 40V 120MA SOD123F
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 120mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
auf Bestellung 48000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.14 EUR
6000+ 0.12 EUR
15000+ 0.11 EUR
30000+ 0.099 EUR
Nexperia USA Inc. Description: DIODE SCHOTTKY 40V 120MA SOD123F
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Average Rectified (Io): 120mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Supplier Device Package: SOD-123F
auf Bestellung 50588 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2 Stücke - Preis und Lieferfrist anzeigen
32+ 0.83 EUR
39+ 0.67 EUR
100+ 0.35 EUR
500+ 0.23 EUR
1000+ 0.16 EUR
BAS116H,115 BAS116H,115 PHGLS22968-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: DIODE GEN PURP 75V 215MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA (DC)
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 67586 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.13 EUR
6000+ 0.11 EUR
Nexperia USA Inc. Description: DIODE GEN PURP 75V 215MA SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA (DC)
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
auf Bestellung 11900 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 67586 Stücke - Preis und Lieferfrist anzeigen
36+ 0.73 EUR
44+ 0.6 EUR
100+ 0.32 EUR
500+ 0.21 EUR
1000+ 0.14 EUR
1PS76SB40,135 1PS76SB40,135 PHGL-S-A0000721047-1.pdf?t.download=true&u=5oefqw Nexperia USA Inc. Description: DIODE SCHOTTKY 40V 120MA SOD323
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 120mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
auf Bestellung 31263 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 60178 Stücke - Preis und Lieferfrist anzeigen
31+ 0.86 EUR
38+ 0.7 EUR
100+ 0.37 EUR
500+ 0.24 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
5000+ 0.13 EUR
1PS76SB70,135 1PS76SB70,135 BAS70_1PS7XSB70_SER.pdf Nexperia USA Inc. Description: DIODE SCHOTTKY 70V 70MA SOD323
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 70mA (DC)
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
auf Bestellung 144588 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 179503 Stücke - Preis und Lieferfrist anzeigen
29+ 0.91 EUR
36+ 0.74 EUR
100+ 0.39 EUR
500+ 0.26 EUR
1000+ 0.18 EUR
2000+ 0.16 EUR
5000+ 0.14 EUR
PMEG2010BEV,115 PMEG2010BEV,115 PMEG3010BEA.pdf Nexperia USA Inc. Description: DIODE SCHOTTKY 20V 1A SOT666
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-666
Current - Average Rectified (Io): 1A (DC)
Capacitance @ Vr, F: 80pF @ 1V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 114610 Stücke - Preis und Lieferfrist anzeigen
1PS76SB70,115 1PS76SB70,115 BAS70_1PS7XSB70_SER.pdf Nexperia USA Inc. Description: DIODE SCHOTTKY 70V 70MA SOD323
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 70mA (DC)
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
auf Bestellung 4 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19089 Stücke - Preis und Lieferfrist anzeigen
PMEG3010BEV,115 PMEG3010BEV,115 PMEG3010BEA.pdf Nexperia USA Inc. Description: DIODE SCHOTTKY 30V 1A SOT666
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-666
Current - Average Rectified (Io): 1A (DC)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 141858 Stücke - Preis und Lieferfrist anzeigen
PMEG3010BEA,115 PMEG3010BEA,115 PMEG3010BEA.pdf Nexperia USA Inc. Description: DIODE SCHOTTKY 30V 1A SOD323
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 1A (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1479 Stücke - Preis und Lieferfrist anzeigen
PSMN017-80PS,127 PSMN017-80PS,127 PSMN017-80PS.pdf Nexperia USA Inc. Description: MOSFET N-CH 80V 50A TO220AB
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id: 4V @ 1mA
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1491 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.24 EUR
10+ 3.8 EUR
100+ 2.96 EUR
500+ 2.45 EUR
1000+ 1.93 EUR
BUK763R9-60E,118 BUK763R9-60E,118 BUK763R9-60E.pdf Nexperia USA Inc. Description: MOSFET N-CH 60V 100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1800 Stücke - Preis und Lieferfrist anzeigen
PSMN015-100B,118 PSMN015-100B,118 PSMN015-100B.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 75A D2PAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5508 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: MOSFET N-CH 100V 75A D2PAK
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 607 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5508 Stücke - Preis und Lieferfrist anzeigen
5+ 5.25 EUR
10+ 4.74 EUR
100+ 3.81 EUR
BUK7608-55A,118 BUK7608-55A,118 BUK7608-55A.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4352 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 0 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 254W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5414 Stücke - Preis und Lieferfrist anzeigen
BUK9608-55A,118 BUK9608-55A,118 BUK9608-55A.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 75A D2PAK
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6021 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 253W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3218 Stücke - Preis und Lieferfrist anzeigen
800+ 3.01 EUR
Nexperia USA Inc. Description: MOSFET N-CH 55V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 6021 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 253W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 941 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3218 Stücke - Preis und Lieferfrist anzeigen
6+ 5.07 EUR
10+ 4.56 EUR
100+ 3.66 EUR
BUK9575-100A,127 BUK9575-100A,127 BUK9575-100A.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 23A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1704 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 99W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3648 Stücke - Preis und Lieferfrist anzeigen
BUK768R1-100E,118 BUK768R1-100E,118 BUK768R1-100E.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7380 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15 Stücke - Preis und Lieferfrist anzeigen
PHB33NQ20T,118 PHB33NQ20T,118 PHB33NQ20T.pdf Nexperia USA Inc. Description: MOSFET N-CH 200V 32.7A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 32.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2006 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: MOSFET N-CH 200V 32.7A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 701 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2006 Stücke - Preis und Lieferfrist anzeigen
6+ 5.1 EUR
10+ 4.59 EUR
100+ 3.69 EUR
PHP9NQ20T,127 PHP9NQ20T,127 PHP9NQ20T.pdf Nexperia USA Inc. Description: MOSFET N-CH 200V 8.7A TO220AB
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 959pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
auf Bestellung 403 Stücke
Lieferzeit 21-28 Tag (e)
PSMN3R4-30PL,127 PSMN3R4-30PL,127 PSMN3R4-30PL.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 100A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3907 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK7520-55A,127 BUK7520-55A,127 BUK7520-55A.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 54A TO220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 118W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1592 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9518-55A,127 BUK9518-55A,127 BUK9518-55A.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 61A TO220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN013-100PS,127 PSMN013-100PS,127 PSMN013-100PS.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 68A TO220AB
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
auf Bestellung 2207 Stücke
Lieferzeit 21-28 Tag (e)
5+ 5.23 EUR
10+ 4.68 EUR
100+ 3.76 EUR
500+ 3.09 EUR
1000+ 2.65 EUR
BUK9606-55B,118 BUK9606-55B,118 BUK9506-55B.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 75A D2PAK
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7565 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 258W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7865 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: MOSFET N-CH 55V 75A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7565 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 258W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 130 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7865 Stücke - Preis und Lieferfrist anzeigen
BUK964R4-40B,118 BUK964R4-40B,118 BUK964R4-40B.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 75A D2PAK
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7124 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 254W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 18570 Stücke - Preis und Lieferfrist anzeigen
BUK662R4-40C,118 BUK662R4-40C,118 BUK662R4-40C.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 120A D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 263W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11334pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 199nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Nexperia USA Inc. Description: MOSFET N-CH 40V 120A D2PAK
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Part Status: Last Time Buy
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 263W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11334pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 199nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
auf Bestellung 632 Stücke
Lieferzeit 21-28 Tag (e)
PSMN7R6-60PS,127 PSMN7R6-60PS,127 PSMN7R6-60PS.pdf Nexperia USA Inc. Description: MOSFET N-CH 60V 92A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 149W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 4829 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.97 EUR
10+ 4.46 EUR
100+ 3.58 EUR
500+ 2.94 EUR
1000+ 2.52 EUR
BUK962R8-60E,118 BUK962R8-60E,118 BUK962R8-60E.pdf Nexperia USA Inc. Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V
auf Bestellung 4000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8237 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V
auf Bestellung 4319 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8237 Stücke - Preis und Lieferfrist anzeigen
BUK761R7-40E,118 BUK761R7-40E,118 BUK761R7-40E.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 324W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN3R0-60BS,118 PSMN3R0-60BS,118 PSMN3R0-60BS.pdf Nexperia USA Inc. Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8079pF @ 30V
Power Dissipation (Max): 306W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Manufacturer: Nexperia USA Inc.
Base Part Number: PSMN3R0
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 789 Stücke - Preis und Lieferfrist anzeigen
BUK7609-75A,118 BUK7609-75A,118 BUK7609-75A.pdf Nexperia USA Inc. Description: MOSFET N-CH 75V 75A D2PAK
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Input Capacitance (Ciss) (Max) @ Vds: 6760 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN030-150B,118 PSMN030-150B,118 PSMN030-150B.pdf Nexperia USA Inc. Description: MOSFET N-CH 150V 55.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55.5A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BC856A,215 BC856A,215 BC856_BC857_BC858.pdf Nexperia USA Inc. Description: TRANS PNP 65V 100MA TO236AB
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
auf Bestellung 183000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1696268 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.059 EUR
6000+ 0.053 EUR
15000+ 0.046 EUR
30000+ 0.042 EUR
75000+ 0.037 EUR
Nexperia USA Inc. Description: TRANS PNP 65V 100MA TO236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
auf Bestellung 185735 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1696268 Stücke - Preis und Lieferfrist anzeigen
77+ 0.34 EUR
86+ 0.3 EUR
158+ 0.17 EUR
500+ 0.1 EUR
1000+ 0.069 EUR
BC857A,215 BC857A,215 BC856_BC857_BC858.pdf Nexperia USA Inc. Description: TRANS PNP 45V 100MA TO236AB
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-236AB
Part Status: Active
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Power - Max: 250 mW
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max): 45 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 202052 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: TRANS PNP 45V 100MA TO236AB
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Power - Max: 250 mW
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Voltage - Collector Emitter Breakdown (Max): 45 V
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 2030 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 202052 Stücke - Preis und Lieferfrist anzeigen
77+ 0.34 EUR
86+ 0.3 EUR
158+ 0.17 EUR
500+ 0.1 EUR
1000+ 0.069 EUR
BC858B,215 BC858B,215 BC856_BC857_BC858.pdf Nexperia USA Inc. Description: TRANS PNP 30V 100MA TO236AB
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 804295 Stücke - Preis und Lieferfrist anzeigen
PMBT2222A,235 PMBT2222A,235 PMBT2222A.pdf Nexperia USA Inc. Description: TRANS NPN 40V 600MA TO236AB
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 49965 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 60169 Stücke - Preis und Lieferfrist anzeigen
72+ 0.36 EUR
80+ 0.32 EUR
148+ 0.18 EUR
500+ 0.11 EUR
1000+ 0.074 EUR
2000+ 0.063 EUR
5000+ 0.057 EUR
BC857C,235 BC857C,235 BC856_BC857_BC858.pdf Nexperia USA Inc. Description: TRANS PNP 45V 0.1A SOT23
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 11924 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 22393 Stücke - Preis und Lieferfrist anzeigen
77+ 0.34 EUR
85+ 0.31 EUR
156+ 0.17 EUR
500+ 0.1 EUR
1000+ 0.07 EUR
2000+ 0.06 EUR
5000+ 0.054 EUR
BC858B,235 BC858B,235 BC856_BC857_BC858.pdf Nexperia USA Inc. Description: TRANS PNP 30V 100MA TO236AB
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15255 Stücke - Preis und Lieferfrist anzeigen
BC858B,215 BC858B,215 BC856_BC857_BC858.pdf Nexperia USA Inc. Description: TRANS PNP 30V 100MA TO236AB
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Packaging: Cut Tape (CT)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 2170 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 802125 Stücke - Preis und Lieferfrist anzeigen
77+ 0.34 EUR
86+ 0.3 EUR
158+ 0.17 EUR
500+ 0.1 EUR
1000+ 0.069 EUR
BC856,215 BC856,215 BC856_BC857_BC858.pdf Nexperia USA Inc. Description: TRANS PNP 65V 0.1A SOT23
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 87182 Stücke - Preis und Lieferfrist anzeigen
PBSS4240XF PBSS4240XF PBSS4240X.pdf Nexperia USA Inc. Description: TRANS NPN 40V 2A SOT89
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
auf Bestellung 8000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13859 Stücke - Preis und Lieferfrist anzeigen
4000+ 0.27 EUR
8000+ 0.25 EUR
Nexperia USA Inc. Description: TRANS NPN 40V 2A SOT89
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 150MHz
auf Bestellung 8787 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 13859 Stücke - Preis und Lieferfrist anzeigen
28+ 0.94 EUR
34+ 0.77 EUR
100+ 0.52 EUR
500+ 0.39 EUR
1000+ 0.29 EUR
2000+ 0.27 EUR
PBSS5240XF PBSS5240XF PBSS5240X.pdf Nexperia USA Inc. Description: TRANS PNP 40V 2A SOT89
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15242 Stücke - Preis und Lieferfrist anzeigen
4000+ 0.22 EUR
8000+ 0.19 EUR
12000+ 0.17 EUR
74HCT7540D,118 74HCT7540D,118 74HC_HCT7540.pdf Nexperia USA Inc. Description: IC BUFFER INVERT 5.5V 20SO
Logic Type: Buffer, Inverting
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: 74HCT7540
Supplier Device Package: 20-SO
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 6mA, 6mA
Output Type: 3-State
Number of Bits per Element: 8
Number of Elements: 1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
74HCT7540D,112 74HCT7540D,112 74HC_HCT7540.pdf Nexperia USA Inc. Description: IC BUFFER INVERT 5.5V 20SO
Manufacturer: Nexperia USA Inc.
Base Part Number: 74HCT7540
Supplier Device Package: 20-SO
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 6mA, 6mA
Output Type: 3-State
Number of Bits per Element: 8
Number of Elements: 1
Logic Type: Buffer, Inverting
Packaging: Tube
Part Status: Active
auf Bestellung 122 Stücke
Lieferzeit 21-28 Tag (e)
TL431MFDT,215 TL431MFDT,215 TL431_Family.pdf Nexperia USA Inc. Description: IC VREF SHUNT ADJ 2% TO236AB
Voltage - Output (Min/Fixed): 2.495V
Supplier Device Package: TO-236AB
Operating Temperature: -40°C ~ 125°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Voltage - Output (Max): 36 V
Current - Output: 100 mA
Part Status: Active
Current - Cathode: 1 mA
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2034458 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.27 EUR
6000+ 0.25 EUR
BSH103BKR BSH103BKR BSH103BK.pdf Nexperia USA Inc. Description: BSH103BK - 30 V, N-CHANNEL TRENC
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 330mW (Ta), 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 79.3 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAT854CW,115 BAT854CW,115 BAT854W_SERIES.pdf Nexperia USA Inc. Description: DIODE ARRAY SCHOTTKY 40V SOT323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature - Junction: 150°C (Max)
Current - Reverse Leakage @ Vr: 500nA @ 25V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: BAT854CW
Supplier Device Package: SOT-323
auf Bestellung 187439 Stücke
Lieferzeit 21-28 Tag (e)
Nexperia USA Inc. Description: DIODE ARRAY SCHOTTKY 40V SOT323
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-323
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
auf Bestellung 20 Stücke
Lieferzeit 21-28 Tag (e)
PMEG2020EPK,315 PMEG2020EPK,315 PMEG2020EPK.pdf Nexperia USA Inc. Description: DIODE SCHOTTKY 20V 2A 2DFN
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Base Part Number: PMEG2020
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1608D-2
Package / Case: 2-XDFN
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 900µA @ 20V
Reverse Recovery Time (trr): 5ns
auf Bestellung 247407 Stücke
Lieferzeit 21-28 Tag (e)
Nexperia USA Inc. Description: DIODE SCHOTTKY 20V 2A DFN1608D-2
Current - Reverse Leakage @ Vr: 900 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1608D-2
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
auf Bestellung 221987 Stücke
Lieferzeit 21-28 Tag (e)
21+ 1.25 EUR
29+ 0.93 EUR
100+ 0.52 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
2000+ 0.23 EUR
Nexperia USA Inc. Description: DIODE SCHOTTKY 20V 2A DFN1608D-2
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 900 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
auf Bestellung 216000 Stücke
Lieferzeit 21-28 Tag (e)
8000+ 0.21 EUR
16000+ 0.19 EUR
24000+ 0.17 EUR
56000+ 0.16 EUR
BUK7610-100B,118 BUK7610-100B,118 BUK7610-100B.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6773 pF @ 25 V
auf Bestellung 1600 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 420 Stücke - Preis und Lieferfrist anzeigen
800+ 4.86 EUR
1600+ 4.1 EUR
Nexperia USA Inc. Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6773 pF @ 25 V
auf Bestellung 1863 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 420 Stücke - Preis und Lieferfrist anzeigen
4+ 7.75 EUR
10+ 6.97 EUR
100+ 5.71 EUR
BUK964R7-80E,118 BUK964R7-80E,118 BUK964R7-80E.pdf Nexperia USA Inc. Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15340 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
Nexperia USA Inc. Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15340 pF @ 25 V
auf Bestellung 755 Stücke
Lieferzeit 21-28 Tag (e)
PSMN057-200B,118 PSMN057-200B,118 PSMN057-200B.pdf Nexperia USA Inc. Description: MOSFET N-CH 200V 39A D2PAK
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 1600 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2400 Stücke - Preis und Lieferfrist anzeigen
800+ 4.41 EUR
1600+ 3.65 EUR
BUK764R0-55B,118 BUK764R0-55B,118 BUK764R0-55B.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 6776 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 3200 Stücke
Lieferzeit 21-28 Tag (e)
800+ 4.59 EUR
1600+ 3.81 EUR
Nexperia USA Inc. Description: MOSFET N-CH 55V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 6776 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 3330 Stücke
Lieferzeit 21-28 Tag (e)
4+ 7.75 EUR
10+ 6.96 EUR
100+ 5.59 EUR
BUK763R1-40B,118 BUK763R1-40B,118 BUK763R1-40B.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6808pF @ 25V
Power Dissipation (Max): 300W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13044 Stücke - Preis und Lieferfrist anzeigen
PSMNR90-30BL,118 PSMNR90-30BL,118 PSMNR90-30BL.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 120A D2PAK
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: PSMNR90
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 306W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14850pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 243nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 4000 Stücke
Lieferzeit 21-28 Tag (e)
Nexperia USA Inc. Description: MOSFET N-CH 30V 120A D2PAK
Base Part Number: PSMNR90
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 306W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14850pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 243nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Nexperia USA Inc.
auf Bestellung 4439 Stücke
Lieferzeit 21-28 Tag (e)
PSMN1R7-60BS,118 PSMN1R7-60BS,118 PSMN1R7-60BS.pdf Nexperia USA Inc. Description: MOSFET N-CH 60V 120A D2PAK
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9997 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN8R7-80PS,127 PSMN8R7-80PS,127 PSMN8R7-80PS.pdf Nexperia USA Inc. Description: MOSFET N-CH 80V 90A TO220AB
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 89 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8000 Stücke - Preis und Lieferfrist anzeigen
5+ 5.56 EUR
10+ 4.98 EUR
BUK962R5-60E,118 BUK962R5-60E,118 BUK962R5-60E.pdf Nexperia USA Inc. Description: MOSFET N-CH 60V 120A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 17450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PHP23NQ11T,127 PHP23NQ11T,127 PHP23NQ11T.pdf Nexperia USA Inc. Description: MOSFET N-CH 110V 23A TO220AB
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 110 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 7432 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7180 Stücke - Preis und Lieferfrist anzeigen
7+ 4.21 EUR
10+ 3.77 EUR
100+ 2.94 EUR
500+ 2.43 EUR
1000+ 1.92 EUR
BUK7508-40B,127 BUK7508-40B,127 BUK7508-40B.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2689 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 18000 Stücke - Preis und Lieferfrist anzeigen
BUK9610-100B,118 BUK9610-100B,118 BUK9610-100B.pdf Nexperia USA Inc. Description: MOSFET N-CH 100V 75A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11045pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 25A, 10V
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10995 Stücke - Preis und Lieferfrist anzeigen
Nexperia USA Inc. Description: MOSFET N-CH 100V 75A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11045pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Cut Tape (CT)
auf Bestellung 1166 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 10995 Stücke - Preis und Lieferfrist anzeigen
BUK963R2-40B,118 BUK963R2-40B,118 BUK963R2-40B.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 100A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 93.4nC @ 5V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 10502pF @ 25V
Power Dissipation (Max): 300W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5169 Stücke - Preis und Lieferfrist anzeigen
BUK7511-55B,127 BUK7511-55B,127 BUK7511-55B.pdf Nexperia USA Inc. Description: MOSFET N-CH 55V 75A TO220AB
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 2604 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 157W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2208 Stücke - Preis und Lieferfrist anzeigen
BUK9509-40B,127 BUK9509-40B,127 BUK9509-40B.pdf Nexperia USA Inc. Description: MOSFET N-CH 40V 75A TO220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 157W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9507-30B,127 BUK9507-30B,127 BUK9507-30B.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 75A TO220AB
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3373 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11973 Stücke - Preis und Lieferfrist anzeigen
PSMN2R8-80BS,118 PSMN2R8-80BS,118 PSMN2R8-80BS.pdf Nexperia USA Inc. Description: MOSFET N-CH 80V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 306W (Tc)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3070 Stücke - Preis und Lieferfrist anzeigen
BUK7507-30B,127 BUK7507-30B,127 BUK7507-30B.pdf Nexperia USA Inc. Description: MOSFET N-CH 30V 75A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2427 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4611 Stücke - Preis und Lieferfrist anzeigen
BZV90-C2V7,115 BZV90.pdf
BZV90-C2V7,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 2.7V 1.5W SOT223
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 2.7V
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Voltage - Forward (Vf) (Max) @ If: 1V @ 50mA
Current - Reverse Leakage @ Vr: 20µA @ 1V
Tolerance: ±5%
Power - Max: 1.5W
Impedance (Max) (Zzt): 100 Ohms
auf Bestellung 3490 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1464 Stücke - Preis und Lieferfrist anzeigen
BZV90-C27,115 BZV90.pdf
BZV90-C27,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 27V 1.5W SOT223
Package / Case: TO-261-4, TO-261AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Power - Max: 1.5 W
Part Status: Active
Supplier Device Package: SOT-223
Impedance (Max) (Zzt): 80 Ohms
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
auf Bestellung 8000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 24088 Stücke - Preis und Lieferfrist anzeigen
1000+ 0.57 EUR
2000+ 0.52 EUR
5000+ 0.49 EUR
BZV90-C27,115 BZV90.pdf
BZV90-C27,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 27V 1.5W SOT223
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Power - Max: 1.5 W
Part Status: Active
Package / Case: TO-261-4, TO-261AA
Tolerance: ±5%
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-223
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 27 V
Operating Temperature: -65°C ~ 150°C
auf Bestellung 10364 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 21724 Stücke - Preis und Lieferfrist anzeigen
18+ 1.48 EUR
21+ 1.26 EUR
100+ 0.94 EUR
500+ 0.74 EUR
BAS20,215 BAS20.pdf
BAS20,215
Hersteller: Nexperia USA Inc.
Description: DIODE GEN PURP 150V 200MA SOT23
Diode Type: Standard
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-236AB
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
auf Bestellung 23764 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 51406 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
76+ 0.35 EUR
138+ 0.19 EUR
500+ 0.12 EUR
1000+ 0.079 EUR
BAS19,235 BAS19.pdf
BAS19,235
Hersteller: Nexperia USA Inc.
Description: DIODE GP 100V 200MA TO236AB
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-236AB
Current - Average Rectified (Io): 200mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAS19,215 BAS19.pdf
BAS19,215
Hersteller: Nexperia USA Inc.
Description: DIODE GP 100V 200MA TO236AB
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-236AB
Current - Average Rectified (Io): 200mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
auf Bestellung 36000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 78327 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.067 EUR
6000+ 0.061 EUR
15000+ 0.053 EUR
30000+ 0.048 EUR
BAS19,215 BAS19.pdf
BAS19,215
Hersteller: Nexperia USA Inc.
Description: DIODE GP 100V 200MA TO236AB
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TO-236AB
Current - Average Rectified (Io): 200mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
auf Bestellung 36630 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 77697 Stücke - Preis und Lieferfrist anzeigen
67+ 0.39 EUR
76+ 0.35 EUR
138+ 0.19 EUR
500+ 0.12 EUR
1000+ 0.079 EUR
BAS40H,115 PHGL-S-A0000721047-1.pdf?t.download=true&u=5oefqw
BAS40H,115
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 120MA SOD123F
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-123F
Current - Average Rectified (Io): 120mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Tape & Reel (TR)
auf Bestellung 48000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 50590 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.14 EUR
6000+ 0.12 EUR
15000+ 0.11 EUR
30000+ 0.099 EUR
BAS40H,115 PHGL-S-A0000721047-1.pdf?t.download=true&u=5oefqw
BAS40H,115
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 120MA SOD123F
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Average Rectified (Io): 120mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SOD-123F
Packaging: Cut Tape (CT)
Supplier Device Package: SOD-123F
auf Bestellung 50588 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 48002 Stücke - Preis und Lieferfrist anzeigen
32+ 0.83 EUR
39+ 0.67 EUR
100+ 0.35 EUR
500+ 0.23 EUR
1000+ 0.16 EUR
BAS116H,115 PHGLS22968-1.pdf?t.download=true&u=5oefqw
BAS116H,115
Hersteller: Nexperia USA Inc.
Description: DIODE GEN PURP 75V 215MA SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA (DC)
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 79486 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.13 EUR
6000+ 0.11 EUR
BAS116H,115 PHGLS22968-1.pdf?t.download=true&u=5oefqw
BAS116H,115
Hersteller: Nexperia USA Inc.
Description: DIODE GEN PURP 75V 215MA SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Diode Type: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 215mA (DC)
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
auf Bestellung 11900 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 73586 Stücke - Preis und Lieferfrist anzeigen
36+ 0.73 EUR
44+ 0.6 EUR
100+ 0.32 EUR
500+ 0.21 EUR
1000+ 0.14 EUR
1PS76SB40,135 PHGL-S-A0000721047-1.pdf?t.download=true&u=5oefqw
1PS76SB40,135
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 40V 120MA SOD323
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 120mA (DC)
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
auf Bestellung 31263 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 60178 Stücke - Preis und Lieferfrist anzeigen
31+ 0.86 EUR
38+ 0.7 EUR
100+ 0.37 EUR
500+ 0.24 EUR
1000+ 0.17 EUR
2000+ 0.15 EUR
5000+ 0.13 EUR
1PS76SB70,135 BAS70_1PS7XSB70_SER.pdf
1PS76SB70,135
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 70V 70MA SOD323
Voltage - DC Reverse (Vr) (Max): 70 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 70mA (DC)
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
auf Bestellung 144588 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 179503 Stücke - Preis und Lieferfrist anzeigen
29+ 0.91 EUR
36+ 0.74 EUR
100+ 0.39 EUR
500+ 0.26 EUR
1000+ 0.18 EUR
2000+ 0.16 EUR
5000+ 0.14 EUR
PMEG2010BEV,115 PMEG3010BEA.pdf
PMEG2010BEV,115
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 20V 1A SOT666
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-666
Current - Average Rectified (Io): 1A (DC)
Capacitance @ Vr, F: 80pF @ 1V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 114610 Stücke - Preis und Lieferfrist anzeigen
1PS76SB70,115 BAS70_1PS7XSB70_SER.pdf
1PS76SB70,115
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 70V 70MA SOD323
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 70mA (DC)
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
auf Bestellung 4 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 19089 Stücke - Preis und Lieferfrist anzeigen
PMEG3010BEV,115 PMEG3010BEA.pdf
PMEG3010BEV,115
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 1A SOT666
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-666
Current - Average Rectified (Io): 1A (DC)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 141858 Stücke - Preis und Lieferfrist anzeigen
PMEG3010BEA,115 PMEG3010BEA.pdf
PMEG3010BEA,115
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 30V 1A SOD323
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 1A (DC)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1479 Stücke - Preis und Lieferfrist anzeigen
PSMN017-80PS,127 PSMN017-80PS.pdf
PSMN017-80PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 50A TO220AB
Power Dissipation (Max): 103W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id: 4V @ 1mA
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 1491 Stücke
Lieferzeit 21-28 Tag (e)
7+ 4.24 EUR
10+ 3.8 EUR
100+ 2.96 EUR
500+ 2.45 EUR
1000+ 1.93 EUR
BUK763R9-60E,118 BUK763R9-60E.pdf
BUK763R9-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 7480 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 1800 Stücke - Preis und Lieferfrist anzeigen
PSMN015-100B,118 PSMN015-100B.pdf
PSMN015-100B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 6115 Stücke - Preis und Lieferfrist anzeigen
PSMN015-100B,118 PSMN015-100B.pdf
PSMN015-100B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 607 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 5508 Stücke - Preis und Lieferfrist anzeigen
5+ 5.25 EUR
10+ 4.74 EUR
100+ 3.81 EUR
BUK7608-55A,118 BUK7608-55A.pdf
BUK7608-55A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 4352 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 0 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 254W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5414 Stücke - Preis und Lieferfrist anzeigen
BUK9608-55A,118 BUK9608-55A.pdf
BUK9608-55A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6021 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 253W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4159 Stücke - Preis und Lieferfrist anzeigen
800+ 3.01 EUR
BUK9608-55A,118 BUK9608-55A.pdf
BUK9608-55A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 6021 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 253W (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 941 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4018 Stücke - Preis und Lieferfrist anzeigen
6+ 5.07 EUR
10+ 4.56 EUR
100+ 3.66 EUR
BUK9575-100A,127 BUK9575-100A.pdf
BUK9575-100A,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 23A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1704 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 99W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3648 Stücke - Preis und Lieferfrist anzeigen
BUK768R1-100E,118 BUK768R1-100E.pdf
BUK768R1-100E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 8.1mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7380 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15 Stücke - Preis und Lieferfrist anzeigen
PHB33NQ20T,118 PHB33NQ20T.pdf
PHB33NQ20T,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 200V 32.7A D2PAK
Gate Charge (Qg) (Max) @ Vgs: 32.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2707 Stücke - Preis und Lieferfrist anzeigen
PHB33NQ20T,118 PHB33NQ20T.pdf
PHB33NQ20T,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 200V 32.7A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32.2 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 701 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2006 Stücke - Preis und Lieferfrist anzeigen
6+ 5.1 EUR
10+ 4.59 EUR
100+ 3.69 EUR
PHP9NQ20T,127 PHP9NQ20T.pdf
PHP9NQ20T,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 200V 8.7A TO220AB
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 88W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 959pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
auf Bestellung 403 Stücke
Lieferzeit 21-28 Tag (e)
PSMN3R4-30PL,127 PSMN3R4-30PL.pdf
PSMN3R4-30PL,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3907 pF @ 12 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK7520-55A,127 BUK7520-55A.pdf
BUK7520-55A,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 54A TO220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 118W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1592 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9518-55A,127 BUK9518-55A.pdf
BUK9518-55A,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 61A TO220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN013-100PS,127 PSMN013-100PS.pdf
PSMN013-100PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 68A TO220AB
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
auf Bestellung 2207 Stücke
Lieferzeit 21-28 Tag (e)
5+ 5.23 EUR
10+ 4.68 EUR
100+ 3.76 EUR
500+ 3.09 EUR
1000+ 2.65 EUR
BUK9606-55B,118 BUK9506-55B.pdf
BUK9606-55B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7565 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 258W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 7995 Stücke - Preis und Lieferfrist anzeigen
BUK9606-55B,118 BUK9506-55B.pdf
BUK9606-55B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7565 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 258W (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 130 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7865 Stücke - Preis und Lieferfrist anzeigen
BUK964R4-40B,118 BUK964R4-40B.pdf
BUK964R4-40B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7124 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 254W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 18570 Stücke - Preis und Lieferfrist anzeigen
BUK662R4-40C,118 BUK662R4-40C.pdf
BUK662R4-40C,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Packaging: Tape & Reel (TR)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 263W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11334pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 199nC @ 10V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 632 Stücke - Preis und Lieferfrist anzeigen
BUK662R4-40C,118 BUK662R4-40C.pdf
BUK662R4-40C,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
Part Status: Last Time Buy
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 263W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11334pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 199nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
auf Bestellung 632 Stücke
Lieferzeit 21-28 Tag (e)
PSMN7R6-60PS,127 PSMN7R6-60PS.pdf
PSMN7R6-60PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 92A TO220AB
Mounting Type: Through Hole
Package / Case: TO-220-3
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 149W (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
auf Bestellung 4829 Stücke
Lieferzeit 21-28 Tag (e)
6+ 4.97 EUR
10+ 4.46 EUR
100+ 3.58 EUR
500+ 2.94 EUR
1000+ 2.52 EUR
BUK962R8-60E,118 BUK962R8-60E.pdf
BUK962R8-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V
auf Bestellung 4000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12556 Stücke - Preis und Lieferfrist anzeigen
BUK962R8-60E,118 BUK962R8-60E.pdf
BUK962R8-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 25 V
auf Bestellung 4319 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12237 Stücke - Preis und Lieferfrist anzeigen
BUK761R7-40E,118 BUK761R7-40E.pdf
BUK761R7-40E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 324W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN3R0-60BS,118 PSMN3R0-60BS.pdf
PSMN3R0-60BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 8079pF @ 30V
Power Dissipation (Max): 306W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Manufacturer: Nexperia USA Inc.
Base Part Number: PSMN3R0
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 789 Stücke - Preis und Lieferfrist anzeigen
BUK7609-75A,118 BUK7609-75A.pdf
BUK7609-75A,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 75A D2PAK
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 230W (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Input Capacitance (Ciss) (Max) @ Vds: 6760 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN030-150B,118 PSMN030-150B.pdf
PSMN030-150B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 150V 55.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55.5A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3680 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BC856A,215 BC856_BC857_BC858.pdf
BC856A,215
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 65V 100MA TO236AB
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-236AB
auf Bestellung 183000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1882003 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.059 EUR
6000+ 0.053 EUR
15000+ 0.046 EUR
30000+ 0.042 EUR
75000+ 0.037 EUR
BC856A,215 BC856_BC857_BC858.pdf
BC856A,215
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 65V 100MA TO236AB
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
auf Bestellung 185735 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 1879268 Stücke - Preis und Lieferfrist anzeigen
77+ 0.34 EUR
86+ 0.3 EUR
158+ 0.17 EUR
500+ 0.1 EUR
1000+ 0.069 EUR
BC857A,215 BC856_BC857_BC858.pdf
BC857A,215
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 45V 100MA TO236AB
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-236AB
Part Status: Active
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Power - Max: 250 mW
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Voltage - Collector Emitter Breakdown (Max): 45 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 204082 Stücke - Preis und Lieferfrist anzeigen
BC857A,215 BC856_BC857_BC858.pdf
BC857A,215
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 45V 100MA TO236AB
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Power - Max: 250 mW
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Voltage - Collector Emitter Breakdown (Max): 45 V
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
auf Bestellung 2030 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 202052 Stücke - Preis und Lieferfrist anzeigen
77+ 0.34 EUR
86+ 0.3 EUR
158+ 0.17 EUR
500+ 0.1 EUR
1000+ 0.069 EUR
BC858B,215 BC856_BC857_BC858.pdf
BC858B,215
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 30V 100MA TO236AB
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 804295 Stücke - Preis und Lieferfrist anzeigen
PMBT2222A,235 PMBT2222A.pdf
PMBT2222A,235
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 40V 600MA TO236AB
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 49965 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 60169 Stücke - Preis und Lieferfrist anzeigen
72+ 0.36 EUR
80+ 0.32 EUR
148+ 0.18 EUR
500+ 0.11 EUR
1000+ 0.074 EUR
2000+ 0.063 EUR
5000+ 0.057 EUR
BC857C,235 BC856_BC857_BC858.pdf
BC857C,235
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 45V 0.1A SOT23
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 11924 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 22393 Stücke - Preis und Lieferfrist anzeigen
77+ 0.34 EUR
85+ 0.31 EUR
156+ 0.17 EUR
500+ 0.1 EUR
1000+ 0.07 EUR
2000+ 0.06 EUR
5000+ 0.054 EUR
BC858B,235 BC856_BC857_BC858.pdf
BC858B,235
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 30V 100MA TO236AB
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 15255 Stücke - Preis und Lieferfrist anzeigen
BC858B,215 BC856_BC857_BC858.pdf
BC858B,215
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 30V 100MA TO236AB
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Packaging: Cut Tape (CT)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 2170 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 802125 Stücke - Preis und Lieferfrist anzeigen
77+ 0.34 EUR
86+ 0.3 EUR
158+ 0.17 EUR
500+ 0.1 EUR
1000+ 0.069 EUR
BC856,215 BC856_BC857_BC858.pdf
BC856,215
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 65V 0.1A SOT23
Packaging: Tape & Reel (TR)
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 65 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-236AB
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 87182 Stücke - Preis und Lieferfrist anzeigen
PBSS4240XF PBSS4240X.pdf
PBSS4240XF
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 40V 2A SOT89
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
auf Bestellung 8000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 22646 Stücke - Preis und Lieferfrist anzeigen
4000+ 0.27 EUR
8000+ 0.25 EUR
PBSS4240XF PBSS4240X.pdf
PBSS4240XF
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 40V 2A SOT89
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 150MHz
auf Bestellung 8787 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 21859 Stücke - Preis und Lieferfrist anzeigen
28+ 0.94 EUR
34+ 0.77 EUR
100+ 0.52 EUR
500+ 0.39 EUR
1000+ 0.29 EUR
2000+ 0.27 EUR
PBSS5240XF PBSS5240X.pdf
PBSS5240XF
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 40V 2A SOT89
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: SOT-89
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 140mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 15242 Stücke - Preis und Lieferfrist anzeigen
4000+ 0.22 EUR
8000+ 0.19 EUR
12000+ 0.17 EUR
74HCT7540D,118 74HC_HCT7540.pdf
74HCT7540D,118
Hersteller: Nexperia USA Inc.
Description: IC BUFFER INVERT 5.5V 20SO
Logic Type: Buffer, Inverting
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: 74HCT7540
Supplier Device Package: 20-SO
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 6mA, 6mA
Output Type: 3-State
Number of Bits per Element: 8
Number of Elements: 1
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
74HCT7540D,112 74HC_HCT7540.pdf
74HCT7540D,112
Hersteller: Nexperia USA Inc.
Description: IC BUFFER INVERT 5.5V 20SO
Manufacturer: Nexperia USA Inc.
Base Part Number: 74HCT7540
Supplier Device Package: 20-SO
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 6mA, 6mA
Output Type: 3-State
Number of Bits per Element: 8
Number of Elements: 1
Logic Type: Buffer, Inverting
Packaging: Tube
Part Status: Active
auf Bestellung 122 Stücke
Lieferzeit 21-28 Tag (e)
TL431MFDT,215 TL431_Family.pdf
TL431MFDT,215
Hersteller: Nexperia USA Inc.
Description: IC VREF SHUNT ADJ 2% TO236AB
Voltage - Output (Min/Fixed): 2.495V
Supplier Device Package: TO-236AB
Operating Temperature: -40°C ~ 125°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Voltage - Output (Max): 36 V
Current - Output: 100 mA
Part Status: Active
Current - Cathode: 1 mA
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2034458 Stücke - Preis und Lieferfrist anzeigen
3000+ 0.27 EUR
6000+ 0.25 EUR
BSH103BKR BSH103BK.pdf
BSH103BKR
Hersteller: Nexperia USA Inc.
Description: BSH103BK - 30 V, N-CHANNEL TRENC
Drain to Source Voltage (Vdss): 30 V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Part Status: Active
Supplier Device Package: TO-236AB
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 330mW (Ta), 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 79.3 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BAT854CW,115 BAT854W_SERIES.pdf
BAT854CW,115
Hersteller: Nexperia USA Inc.
Description: DIODE ARRAY SCHOTTKY 40V SOT323
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature - Junction: 150°C (Max)
Current - Reverse Leakage @ Vr: 500nA @ 25V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 550mV @ 100mA
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Voltage - DC Reverse (Vr) (Max): 40V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Base Part Number: BAT854CW
Supplier Device Package: SOT-323
auf Bestellung 187439 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 20 Stücke - Preis und Lieferfrist anzeigen
BAT854CW,115 BAT854W_SERIES.pdf
BAT854CW,115
Hersteller: Nexperia USA Inc.
Description: DIODE ARRAY SCHOTTKY 40V SOT323
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-323
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Diode Configuration: 1 Pair Common Cathode
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Schottky
auf Bestellung 20 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 187439 Stücke - Preis und Lieferfrist anzeigen
PMEG2020EPK,315 PMEG2020EPK.pdf
PMEG2020EPK,315
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 20V 2A 2DFN
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 450mV @ 2A
Current - Average Rectified (Io): 2A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Base Part Number: PMEG2020
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1608D-2
Package / Case: 2-XDFN
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Mounting Type: Surface Mount
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 900µA @ 20V
Reverse Recovery Time (trr): 5ns
auf Bestellung 247407 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 437987 Stücke - Preis und Lieferfrist anzeigen
PMEG2020EPK,315 PMEG2020EPK.pdf
PMEG2020EPK,315
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 20V 2A DFN1608D-2
Current - Reverse Leakage @ Vr: 900 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: DFN1608D-2
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
auf Bestellung 221987 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 463407 Stücke - Preis und Lieferfrist anzeigen
21+ 1.25 EUR
29+ 0.93 EUR
100+ 0.52 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
2000+ 0.23 EUR
PMEG2020EPK,315 PMEG2020EPK.pdf
PMEG2020EPK,315
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 20V 2A DFN1608D-2
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Current - Reverse Leakage @ Vr: 900 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)
Current - Average Rectified (Io): 2A
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
auf Bestellung 216000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 469394 Stücke - Preis und Lieferfrist anzeigen
8000+ 0.21 EUR
16000+ 0.19 EUR
24000+ 0.17 EUR
56000+ 0.16 EUR
BUK7610-100B,118 BUK7610-100B.pdf
BUK7610-100B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6773 pF @ 25 V
auf Bestellung 1600 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2283 Stücke - Preis und Lieferfrist anzeigen
800+ 4.86 EUR
1600+ 4.1 EUR
BUK7610-100B,118 BUK7610-100B.pdf
BUK7610-100B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6773 pF @ 25 V
auf Bestellung 1863 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2020 Stücke - Preis und Lieferfrist anzeigen
4+ 7.75 EUR
10+ 6.97 EUR
100+ 5.71 EUR
BUK964R7-80E,118 BUK964R7-80E.pdf
BUK964R7-80E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15340 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 755 Stücke - Preis und Lieferfrist anzeigen
BUK964R7-80E,118 BUK964R7-80E.pdf
BUK964R7-80E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15340 pF @ 25 V
auf Bestellung 755 Stücke
Lieferzeit 21-28 Tag (e)
PSMN057-200B,118 PSMN057-200B.pdf
PSMN057-200B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 200V 39A D2PAK
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 1600 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 2400 Stücke - Preis und Lieferfrist anzeigen
800+ 4.41 EUR
1600+ 3.65 EUR
BUK764R0-55B,118 BUK764R0-55B.pdf
BUK764R0-55B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 6776 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 3200 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3330 Stücke - Preis und Lieferfrist anzeigen
800+ 4.59 EUR
1600+ 3.81 EUR
BUK764R0-55B,118 BUK764R0-55B.pdf
BUK764R0-55B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 6776 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 3330 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 3200 Stücke - Preis und Lieferfrist anzeigen
4+ 7.75 EUR
10+ 6.96 EUR
100+ 5.59 EUR
BUK763R1-40B,118 BUK763R1-40B.pdf
BUK763R1-40B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6808pF @ 25V
Power Dissipation (Max): 300W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 13044 Stücke - Preis und Lieferfrist anzeigen
PSMNR90-30BL,118 PSMNR90-30BL.pdf
PSMNR90-30BL,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A D2PAK
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Nexperia USA Inc.
Base Part Number: PSMNR90
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 306W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14850pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 243nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 4000 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4439 Stücke - Preis und Lieferfrist anzeigen
PSMNR90-30BL,118 PSMNR90-30BL.pdf
PSMNR90-30BL,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A D2PAK
Base Part Number: PSMNR90
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 306W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 14850pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 243nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Nexperia USA Inc.
auf Bestellung 4439 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 4000 Stücke - Preis und Lieferfrist anzeigen
PSMN1R7-60BS,118 PSMN1R7-60BS.pdf
PSMN1R7-60BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9997 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PSMN8R7-80PS,127 PSMN8R7-80PS.pdf
PSMN8R7-80PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 90A TO220AB
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3346 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 170W (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 89 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 8000 Stücke - Preis und Lieferfrist anzeigen
5+ 5.56 EUR
10+ 4.98 EUR
BUK962R5-60E,118 BUK962R5-60E.pdf
BUK962R5-60E,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 17450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±10V
Power Dissipation (Max): 357W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
PHP23NQ11T,127 PHP23NQ11T.pdf
PHP23NQ11T,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 110V 23A TO220AB
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 110 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 7432 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 7180 Stücke - Preis und Lieferfrist anzeigen
7+ 4.21 EUR
10+ 3.77 EUR
100+ 2.94 EUR
500+ 2.43 EUR
1000+ 1.92 EUR
BUK7508-40B,127 BUK7508-40B.pdf
BUK7508-40B,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A TO220AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2689 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 18000 Stücke - Preis und Lieferfrist anzeigen
BUK9610-100B,118 BUK9610-100B.pdf
BUK9610-100B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11045pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 25A, 10V
auf Bestellung 800 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 12161 Stücke - Preis und Lieferfrist anzeigen
BUK9610-100B,118 BUK9610-100B.pdf
BUK9610-100B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 75A D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 300W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11045pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Last Time Buy
Packaging: Cut Tape (CT)
auf Bestellung 1166 Stücke
Lieferzeit 21-28 Tag (e)
auf Bestellung 11795 Stücke - Preis und Lieferfrist anzeigen
BUK963R2-40B,118 BUK963R2-40B.pdf
BUK963R2-40B,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A D2PAK
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 93.4nC @ 5V
Vgs (Max): ±15V
Input Capacitance (Ciss) (Max) @ Vds: 10502pF @ 25V
Power Dissipation (Max): 300W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 5169 Stücke - Preis und Lieferfrist anzeigen
BUK7511-55B,127 BUK7511-55B.pdf
BUK7511-55B,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A TO220AB
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 2604 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Packaging: Tube
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 157W (Tc)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 2208 Stücke - Preis und Lieferfrist anzeigen
BUK9509-40B,127 BUK9509-40B.pdf
BUK9509-40B,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 75A TO220AB
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 157W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
Vgs (Max): ±15V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
Vgs(th) (Max) @ Id: 2V @ 1mA
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
BUK9507-30B,127 BUK9507-30B.pdf
BUK9507-30B,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 75A TO220AB
Vgs (Max): ±15V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3373 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 11973 Stücke - Preis und Lieferfrist anzeigen
PSMN2R8-80BS,118 PSMN2R8-80BS.pdf
PSMN2R8-80BS,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 306W (Tc)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 3070 Stücke - Preis und Lieferfrist anzeigen
BUK7507-30B,127 BUK7507-30B.pdf
BUK7507-30B,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 75A TO220AB
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 157W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2427 pF @ 25 V
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
auf Bestellung 4611 Stücke - Preis und Lieferfrist anzeigen
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