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PSMN8R0-40PS,127 PSMN8R0-40PS,127 Nexperia USA Inc. PSMN8R0-40PS.pdf Description: MOSFET N-CH 40V 77A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V
auf Bestellung 4880 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.66 EUR
10+2.21 EUR
100+1.76 EUR
500+1.49 EUR
1000+1.26 EUR
2000+1.2 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
PSMN2R2-40PS,127 PSMN2R2-40PS,127 Nexperia USA Inc. PSMN2R2-40PS.pdf Description: MOSFET N-CH 40V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8423 pF @ 20 V
auf Bestellung 2973 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.86 EUR
10+4.93 EUR
100+3.99 EUR
500+3.55 EUR
1000+3.04 EUR
2000+2.86 EUR
Mindestbestellmenge: 4
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PSMN4R5-40PS,127 PSMN4R5-40PS,127 Nexperia USA Inc. PSMN4R5-40PS.pdf Description: MOSFET N-CH 40V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN2R0-30PL,127 PSMN2R0-30PL,127 Nexperia USA Inc. PSMN2R0-30PL.pdf Description: MOSFET N-CH 30V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN8R3-40YS,115 PSMN8R3-40YS,115 Nexperia USA Inc. PSMN8R3-40YS.pdf Description: MOSFET N-CH 40V 70A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 15A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 20 V
auf Bestellung 6505 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.11 EUR
14+1.33 EUR
100+0.87 EUR
500+0.68 EUR
Mindestbestellmenge: 9
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PSMN8R2-80YS,115 PSMN8R2-80YS,115 Nexperia USA Inc. PSMN8R2-80YS.pdf Description: MOSFET N-CH 80V 82A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 40 V
auf Bestellung 16712 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.5 EUR
10+1.84 EUR
100+1.14 EUR
500+1.1 EUR
Mindestbestellmenge: 8
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PSMN4R0-40YS,115 PSMN4R0-40YS,115 Nexperia USA Inc. PSMN4R0-40YS.pdf Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 15A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V
auf Bestellung 65508 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.46 EUR
11+1.67 EUR
100+1.17 EUR
500+0.95 EUR
Mindestbestellmenge: 8
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PSMN2R6-40YS,115 PSMN2R6-40YS,115 Nexperia USA Inc. PSMN2R6-40YS.pdf Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3776 pF @ 12 V
auf Bestellung 113042 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.45 EUR
10+2.34 EUR
100+1.67 EUR
500+1.37 EUR
Mindestbestellmenge: 6
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PSMN1R3-30YL,115 PSMN1R3-30YL,115 Nexperia USA Inc. PSMN1R3-30YL.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 15A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6227 pF @ 12 V
auf Bestellung 11543 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.17 EUR
10+3.26 EUR
100+2.44 EUR
500+2.06 EUR
Mindestbestellmenge: 4
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PSMN1R2-25YL,115 PSMN1R2-25YL,115 Nexperia USA Inc. PSMN1R2-25YL.pdf Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 12 V
auf Bestellung 29807 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.1 EUR
10+2.37 EUR
100+1.89 EUR
500+1.71 EUR
Mindestbestellmenge: 6
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PSMN026-80YS,115 PSMN026-80YS,115 Nexperia USA Inc. PSMN026-80YS.pdf Description: MOSFET N-CH 80V 34A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 5A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 40 V
auf Bestellung 3488 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.09 EUR
23+0.78 EUR
100+0.54 EUR
Mindestbestellmenge: 17
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PSMN013-80YS,115 PSMN013-80YS,115 Nexperia USA Inc. PSMN013-80YS.pdf Description: MOSFET N-CH 80V 60A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 15A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 40 V
auf Bestellung 4805 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.95 EUR
14+1.31 EUR
100+1 EUR
500+0.85 EUR
Mindestbestellmenge: 10
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PSMN8R2-80YS,115 PSMN8R2-80YS,115 Nexperia USA Inc. PSMN8R2-80YS.pdf Description: MOSFET N-CH 80V 82A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 40 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.85 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
PSMN8R3-40YS,115 PSMN8R3-40YS,115 Nexperia USA Inc. PSMN8R3-40YS.pdf Description: MOSFET N-CH 40V 70A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 15A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 20 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.59 EUR
3000+0.54 EUR
4500+0.51 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
PSMN2R6-40YS,115 PSMN2R6-40YS,115 Nexperia USA Inc. PSMN2R6-40YS.pdf Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3776 pF @ 12 V
auf Bestellung 111000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.22 EUR
Mindestbestellmenge: 1500
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PSMN4R0-40YS,115 PSMN4R0-40YS,115 Nexperia USA Inc. PSMN4R0-40YS.pdf Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 15A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.79 EUR
Mindestbestellmenge: 1500
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PSMN1R3-30YL,115 PSMN1R3-30YL,115 Nexperia USA Inc. PSMN1R3-30YL.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 15A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6227 pF @ 12 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.79 EUR
3000+1.78 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
PSMN026-80YS,115 PSMN026-80YS,115 Nexperia USA Inc. PSMN026-80YS.pdf Description: MOSFET N-CH 80V 34A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 5A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.44 EUR
3000+0.43 EUR
Mindestbestellmenge: 1500
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PSMN1R2-25YL,115 PSMN1R2-25YL,115 Nexperia USA Inc. PSMN1R2-25YL.pdf Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 12 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.64 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
PSMN013-80YS,115 PSMN013-80YS,115 Nexperia USA Inc. PSMN013-80YS.pdf Description: MOSFET N-CH 80V 60A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 15A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 40 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.64 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
PSMN3R0-60PS,127 PSMN3R0-60PS,127 Nexperia USA Inc. PSMN3R0-60PS.pdf Description: MOSFET N-CH 60V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8079 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN7R6-60PS,127 PSMN7R6-60PS,127 Nexperia USA Inc. PSMN7R6-60PS.pdf Description: MOSFET N-CH 60V 92A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN013-100PS,127 PSMN013-100PS,127 Nexperia USA Inc. PSMN013-100PS.pdf Description: MOSFET N-CH 100V 68A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN5R6-100PS,127 PSMN5R6-100PS,127 Nexperia USA Inc. PSMN5R6-100PS.pdf Description: MOSFET N-CH 100V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8061 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN5R5-60YS,115 PSMN5R5-60YS,115 Nexperia USA Inc. PSMN5R5-60YS.pdf Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3501 pF @ 30 V
auf Bestellung 24000 Stücke:
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PSMN012-60YS,115 PSMN012-60YS,115 Nexperia USA Inc. PSMN012-60YS.pdf Description: MOSFET N-CH 60V 59A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 15A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 30 V
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PSMN012-100YS,115 PSMN012-100YS,115 Nexperia USA Inc. PSMN012-100YS.pdf Description: MOSFET N-CH 100V 60A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
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7500+0.84 EUR
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PSMN8R5-60YS,115 PSMN8R5-60YS,115 Nexperia USA Inc. PSMN8R5-60YS.pdf Description: MOSFET N-CH 60V 76A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 30 V
auf Bestellung 40500 Stücke:
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PSMN020-100YS,115 PSMN020-100YS,115 Nexperia USA Inc. PSMN020-100YS.pdf Description: MOSFET N-CH 100V 43A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 15A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 50 V
auf Bestellung 129000 Stücke:
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1500+0.64 EUR
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PSMN012-100YS,115 PSMN012-100YS,115 Nexperia USA Inc. PSMN012-100YS.pdf Description: MOSFET N-CH 100V 60A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 50 V
auf Bestellung 13370 Stücke:
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PSMN012-60YS,115 PSMN012-60YS,115 Nexperia USA Inc. PSMN012-60YS.pdf Description: MOSFET N-CH 60V 59A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 15A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 30 V
auf Bestellung 2199 Stücke:
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PSMN020-100YS,115 PSMN020-100YS,115 Nexperia USA Inc. PSMN020-100YS.pdf Description: MOSFET N-CH 100V 43A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 15A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 50 V
auf Bestellung 129408 Stücke:
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PSMN5R5-60YS,115 PSMN5R5-60YS,115 Nexperia USA Inc. PSMN5R5-60YS.pdf Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3501 pF @ 30 V
auf Bestellung 24891 Stücke:
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PSMN8R5-60YS,115 PSMN8R5-60YS,115 Nexperia USA Inc. PSMN8R5-60YS.pdf Description: MOSFET N-CH 60V 76A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 30 V
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74ALVC164245DGG:11 74ALVC164245DGG:11 Nexperia USA Inc. 74ALVC164245.pdf Description: IC TRANSLATOR BIDIR 48TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 48-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.5 V ~ 3.6 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Part Status: Active
Number of Circuits: 2
auf Bestellung 16937 Stücke:
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74AUP1G157GW,125 74AUP1G157GW,125 Nexperia USA Inc. 74AUP1G157.pdf Description: IC MULTIPLEXER 1 X 2:1 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 4mA, 4mA
Voltage Supply Source: Single Supply
Supplier Device Package: 6-TSSOP
auf Bestellung 2862 Stücke:
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74HC165PW,118 74HC165PW,118 Nexperia USA Inc. 74HC_HCT165.pdf Description: IC 8BIT SHIFT REGISTER 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-TSSOP
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 7148 Stücke:
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74HC377PW,118 74HC377PW,118 Nexperia USA Inc. 74HC_HCT377.pdf Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 83 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 4917 Stücke:
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74HCT4052D,118 74HCT4052D,118 Nexperia USA Inc. 74HC_HCT4052.pdf Description: IC SWITCH SP4T X 2 150OHM 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 150Ohm
-3db Bandwidth: 180MHz
Supplier Device Package: 16-SO
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Voltage - Supply, Dual (V±): ±1V ~ 5V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 6Ohm
Switch Time (Ton, Toff) (Max): 60ns, 48ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 2µA
Part Status: Active
Number of Circuits: 2
auf Bestellung 13874 Stücke:
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74LVC4245APW,118 74LVC4245APW,118 Nexperia USA Inc. 74LVC4245A.pdf Description: IC TRANSLATOR BIDIR 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 24-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 165372 Stücke:
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BAS316,115 BAS316,115 Nexperia USA Inc. BAS316.pdf Description: DIODE STANDARD 100V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 117980 Stücke:
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BAV70S,115 BAV70S,115 Nexperia USA Inc. BAV70S.pdf Description: DIODE ARRAY GP 100V 250MA 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: 6-TSSOP
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 48634 Stücke:
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BAV99,235 BAV99,235 Nexperia USA Inc. BAV99.pdf Description: DIODE ARR GP 100V 215MA TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 445618 Stücke:
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BC847CW,115 BC847CW,115 Nexperia USA Inc. BC847XW_SER.pdf Description: TRANS NPN 45V 0.1A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
auf Bestellung 821907 Stücke:
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BCP52-16,115 BCP52-16,115 Nexperia USA Inc. BCP52_BCX52_BC52PA.pdf Description: TRANS PNP 60V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2164 Stücke:
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BCP54-16,115 BCP54-16,115 Nexperia USA Inc. BCP54_SER.pdf Description: TRANS NPN 45V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 960 mW
auf Bestellung 21396 Stücke:
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BCP56-16,115 BCP56-16,115 Nexperia USA Inc. BCP56_SER.pdf Description: TRANS NPN 80V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 650 mW
auf Bestellung 42151 Stücke:
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BCV47,215 BCV47,215 Nexperia USA Inc. BCV47.pdf Description: TRANS NPN DARL 60V 0.5A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 110198 Stücke:
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BCX55-16,115 BCX55-16,115 Nexperia USA Inc. BCX55_SER.pdf Description: TRANS NPN 60V 1A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.25 W
auf Bestellung 11217 Stücke:
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BCX56-10,115 BCX56-10,115 Nexperia USA Inc. BCX56_SER.pdf Description: TRANS NPN 80V 1A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
auf Bestellung 2121 Stücke:
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BSH103,215 BSH103,215 Nexperia USA Inc. BSH103.pdf Description: MOSFET N-CH 30V 850MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 400mV @ 1mA (Min)
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 24 V
auf Bestellung 30378 Stücke:
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BZV55-C12,115 BZV55-C12,115 Nexperia USA Inc. BZV55_SER.pdf Description: DIODE ZENER 12V 500MW LLDS
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: LLDS; MiniMelf
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 2484 Stücke:
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BZX79-C15,113 BZX79-C15,113 Nexperia USA Inc. BZX79.pdf Description: DIODE ZENER 15V 400MW ALF2
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
auf Bestellung 10520 Stücke:
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HEF4794BT,118 HEF4794BT,118 Nexperia USA Inc. HEF4794B.pdf Description: IC LED DRIVER LINEAR 40MA 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 8
Frequency: 28MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 16-SO
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 15V
Part Status: Active
auf Bestellung 20368 Stücke:
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PMBD7000,235 PMBD7000,235 Nexperia USA Inc. PMBD7000.pdf Description: DIODE ARR GP 100V 215MA TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
auf Bestellung 42513 Stücke:
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PMBT5551,215 PMBT5551,215 Nexperia USA Inc. PMBT5551.pdf Description: TRANS NPN 160V 0.3A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 250 mW
auf Bestellung 8201 Stücke:
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53+0.33 EUR
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137+0.13 EUR
500+0.094 EUR
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PMEG2010EA,115 PMEG2010EA,115 Nexperia USA Inc. PMEG2010EA.pdf Description: DIODE SCHOTTKY 20V 1A SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
Qualification: AEC-Q101
auf Bestellung 26498 Stücke:
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PSSI2021SAY,115 PSSI2021SAY,115 Nexperia USA Inc. PSSI2021SAY.pdf Description: IC CURRENT SOURCE 5TSSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Function: Current Source
Voltage - Input: 75V
Current - Output: 50mA
Operating Temperature: -65°C ~ 150°C
Supplier Device Package: 5-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 20495 Stücke:
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40+0.44 EUR
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PUMD13,115 PUMD13,115 Nexperia USA Inc. PUMD13.pdf Description: TRANS PREBIAS 1NPN 1PNP 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Part Status: Active
auf Bestellung 33400 Stücke:
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48+0.37 EUR
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PUMD3,115 PUMD3,115 Nexperia USA Inc. PUMD3.pdf Description: TRANS PREBIAS 1NPN 1PNP 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: 6-TSSOP
Part Status: Active
auf Bestellung 215113 Stücke:
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48+0.37 EUR
79+0.22 EUR
127+0.14 EUR
500+0.1 EUR
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PSMN8R0-40PS,127 PSMN8R0-40PS.pdf
PSMN8R0-40PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 77A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1262 pF @ 12 V
auf Bestellung 4880 Stücke:
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Anzahl Preis
7+2.66 EUR
10+2.21 EUR
100+1.76 EUR
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PSMN2R2-40PS,127 PSMN2R2-40PS.pdf
PSMN2R2-40PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8423 pF @ 20 V
auf Bestellung 2973 Stücke:
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4+5.86 EUR
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PSMN4R5-40PS,127 PSMN4R5-40PS.pdf
PSMN4R5-40PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2683 pF @ 12 V
Produkt ist nicht verfügbar
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PSMN2R0-30PL,127 PSMN2R0-30PL.pdf
PSMN2R0-30PL,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 15A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 12 V
Produkt ist nicht verfügbar
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PSMN8R3-40YS,115 PSMN8R3-40YS.pdf
PSMN8R3-40YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 70A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 15A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 20 V
auf Bestellung 6505 Stücke:
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Anzahl Preis
9+2.11 EUR
14+1.33 EUR
100+0.87 EUR
500+0.68 EUR
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PSMN8R2-80YS,115 PSMN8R2-80YS.pdf
PSMN8R2-80YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 82A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 40 V
auf Bestellung 16712 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.5 EUR
10+1.84 EUR
100+1.14 EUR
500+1.1 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
PSMN4R0-40YS,115 PSMN4R0-40YS.pdf
PSMN4R0-40YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 15A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V
auf Bestellung 65508 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
11+1.67 EUR
100+1.17 EUR
500+0.95 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
PSMN2R6-40YS,115 PSMN2R6-40YS.pdf
PSMN2R6-40YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3776 pF @ 12 V
auf Bestellung 113042 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
10+2.34 EUR
100+1.67 EUR
500+1.37 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
PSMN1R3-30YL,115 PSMN1R3-30YL.pdf
PSMN1R3-30YL,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 15A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6227 pF @ 12 V
auf Bestellung 11543 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.17 EUR
10+3.26 EUR
100+2.44 EUR
500+2.06 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
PSMN1R2-25YL,115 PSMN1R2-25YL.pdf
PSMN1R2-25YL,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 12 V
auf Bestellung 29807 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.1 EUR
10+2.37 EUR
100+1.89 EUR
500+1.71 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
PSMN026-80YS,115 PSMN026-80YS.pdf
PSMN026-80YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 34A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 5A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 40 V
auf Bestellung 3488 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
23+0.78 EUR
100+0.54 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
PSMN013-80YS,115 PSMN013-80YS.pdf
PSMN013-80YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 60A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 15A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 40 V
auf Bestellung 4805 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.95 EUR
14+1.31 EUR
100+1 EUR
500+0.85 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
PSMN8R2-80YS,115 PSMN8R2-80YS.pdf
PSMN8R2-80YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 82A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 40 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.85 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
PSMN8R3-40YS,115 PSMN8R3-40YS.pdf
PSMN8R3-40YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 70A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 15A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1215 pF @ 20 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.59 EUR
3000+0.54 EUR
4500+0.51 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
PSMN2R6-40YS,115 PSMN2R6-40YS.pdf
PSMN2R6-40YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3776 pF @ 12 V
auf Bestellung 111000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.22 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
PSMN4R0-40YS,115 PSMN4R0-40YS.pdf
PSMN4R0-40YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 15A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.79 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
PSMN1R3-30YL,115 PSMN1R3-30YL.pdf
PSMN1R3-30YL,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 15A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6227 pF @ 12 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.79 EUR
3000+1.78 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
PSMN026-80YS,115 PSMN026-80YS.pdf
PSMN026-80YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 34A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 5A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.44 EUR
3000+0.43 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
PSMN1R2-25YL,115 PSMN1R2-25YL.pdf
PSMN1R2-25YL,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: LFPAK56; Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6380 pF @ 12 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.64 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
PSMN013-80YS,115 PSMN013-80YS.pdf
PSMN013-80YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 60A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 15A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 40 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.64 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
PSMN3R0-60PS,127 PSMN3R0-60PS.pdf
PSMN3R0-60PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8079 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN7R6-60PS,127 PSMN7R6-60PS.pdf
PSMN7R6-60PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 92A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 25A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 38.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2651 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN013-100PS,127 PSMN013-100PS.pdf
PSMN013-100PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 68A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN5R6-100PS,127 PSMN5R6-100PS.pdf
PSMN5R6-100PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8061 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN5R5-60YS,115 PSMN5R5-60YS.pdf
PSMN5R5-60YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3501 pF @ 30 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.21 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
PSMN012-60YS,115 PSMN012-60YS.pdf
PSMN012-60YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 59A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 15A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 30 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.63 EUR
Mindestbestellmenge: 1500
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PSMN012-100YS,115 PSMN012-100YS.pdf
PSMN012-100YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 60A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.9 EUR
3000+0.88 EUR
4500+0.85 EUR
7500+0.84 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
PSMN8R5-60YS,115 PSMN8R5-60YS.pdf
PSMN8R5-60YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 76A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 30 V
auf Bestellung 40500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.75 EUR
Mindestbestellmenge: 1500
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PSMN020-100YS,115 PSMN020-100YS.pdf
PSMN020-100YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 43A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 15A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 50 V
auf Bestellung 129000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.64 EUR
3000+0.63 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
PSMN012-100YS,115 PSMN012-100YS.pdf
PSMN012-100YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 60A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 50 V
auf Bestellung 13370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
10+1.88 EUR
100+1.37 EUR
500+1.09 EUR
Mindestbestellmenge: 8
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PSMN012-60YS,115 PSMN012-60YS.pdf
PSMN012-60YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 59A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 11.1mOhm @ 15A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1685 pF @ 30 V
auf Bestellung 2199 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.46 EUR
16+1.15 EUR
100+0.77 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
PSMN020-100YS,115 PSMN020-100YS.pdf
PSMN020-100YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 43A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 15A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2210 pF @ 50 V
auf Bestellung 129408 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.16 EUR
13+1.43 EUR
100+1.06 EUR
500+0.86 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
PSMN5R5-60YS,115 PSMN5R5-60YS.pdf
PSMN5R5-60YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3501 pF @ 30 V
auf Bestellung 24891 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
10+2.15 EUR
100+1.63 EUR
500+1.48 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
PSMN8R5-60YS,115 PSMN8R5-60YS.pdf
PSMN8R5-60YS,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 76A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 30 V
auf Bestellung 42500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.94 EUR
100+0.92 EUR
Mindestbestellmenge: 19
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74ALVC164245DGG:11 74ALVC164245.pdf
74ALVC164245DGG:11
Hersteller: Nexperia USA Inc.
Description: IC TRANSLATOR BIDIR 48TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 48-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.5 V ~ 3.6 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Part Status: Active
Number of Circuits: 2
auf Bestellung 16937 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
18+1.01 EUR
25+0.91 EUR
100+0.8 EUR
250+0.75 EUR
500+0.72 EUR
Mindestbestellmenge: 13
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74AUP1G157GW,125 74AUP1G157.pdf
74AUP1G157GW,125
Hersteller: Nexperia USA Inc.
Description: IC MULTIPLEXER 1 X 2:1 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 2:1
Type: Multiplexer
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 4mA, 4mA
Voltage Supply Source: Single Supply
Supplier Device Package: 6-TSSOP
auf Bestellung 2862 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
71+0.25 EUR
80+0.22 EUR
100+0.19 EUR
250+0.17 EUR
500+0.16 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
74HC165PW,118 74HC_HCT165.pdf
74HC165PW,118
Hersteller: Nexperia USA Inc.
Description: IC 8BIT SHIFT REGISTER 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Parallel or Serial to Serial
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 16-TSSOP
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 7148 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
57+0.31 EUR
65+0.27 EUR
100+0.24 EUR
250+0.22 EUR
500+0.21 EUR
1000+0.2 EUR
Mindestbestellmenge: 40
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74HC377PW,118 74HC_HCT377.pdf
74HC377PW,118
Hersteller: Nexperia USA Inc.
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 83 MHz
Input Capacitance: 3.5 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 4917 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
34+0.52 EUR
38+0.46 EUR
100+0.4 EUR
250+0.37 EUR
500+0.36 EUR
1000+0.34 EUR
Mindestbestellmenge: 24
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74HCT4052D,118 74HC_HCT4052.pdf
74HCT4052D,118
Hersteller: Nexperia USA Inc.
Description: IC SWITCH SP4T X 2 150OHM 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 150Ohm
-3db Bandwidth: 180MHz
Supplier Device Package: 16-SO
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Voltage - Supply, Dual (V±): ±1V ~ 5V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 6Ohm
Switch Time (Ton, Toff) (Max): 60ns, 48ns
Channel Capacitance (CS(off), CD(off)): 3.5pF
Current - Leakage (IS(off)) (Max): 2µA
Part Status: Active
Number of Circuits: 2
auf Bestellung 13874 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.83 EUR
31+0.58 EUR
34+0.52 EUR
100+0.45 EUR
250+0.42 EUR
500+0.4 EUR
1000+0.39 EUR
Mindestbestellmenge: 22
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74LVC4245APW,118 74LVC4245A.pdf
74LVC4245APW,118
Hersteller: Nexperia USA Inc.
Description: IC TRANSLATOR BIDIR 24TSSOP
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: 24-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 165372 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
23+0.78 EUR
26+0.7 EUR
100+0.61 EUR
250+0.57 EUR
500+0.55 EUR
1000+0.54 EUR
Mindestbestellmenge: 17
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BAS316,115 BAS316.pdf
BAS316,115
Hersteller: Nexperia USA Inc.
Description: DIODE STANDARD 100V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 117980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
189+0.093 EUR
222+0.079 EUR
500+0.052 EUR
1000+0.04 EUR
Mindestbestellmenge: 112
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BAV70S,115 BAV70S.pdf
BAV70S,115
Hersteller: Nexperia USA Inc.
Description: DIODE ARRAY GP 100V 250MA 6TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 2 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 250mA (DC)
Supplier Device Package: 6-TSSOP
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 48634 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
84+0.21 EUR
110+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 56
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BAV99,235 BAV99.pdf
BAV99,235
Hersteller: Nexperia USA Inc.
Description: DIODE ARR GP 100V 215MA TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 445618 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
500+0.035 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
BC847CW,115 BC847XW_SER.pdf
BC847CW,115
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 45V 0.1A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
auf Bestellung 821907 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
124+0.14 EUR
202+0.087 EUR
500+0.063 EUR
1000+0.055 EUR
Mindestbestellmenge: 77
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BCP52-16,115 BCP52_BCX52_BC52PA.pdf
BCP52-16,115
Hersteller: Nexperia USA Inc.
Description: TRANS PNP 60V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 145MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 2164 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
49+0.36 EUR
100+0.23 EUR
500+0.17 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
BCP54-16,115 BCP54_SER.pdf
BCP54-16,115
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 45V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 960 mW
auf Bestellung 21396 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
40+0.45 EUR
100+0.28 EUR
500+0.21 EUR
Mindestbestellmenge: 25
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BCP56-16,115 BCP56_SER.pdf
BCP56-16,115
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 80V 1A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 650 mW
auf Bestellung 42151 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
41+0.44 EUR
100+0.28 EUR
500+0.21 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
BCV47,215 BCV47.pdf
BCV47,215
Hersteller: Nexperia USA Inc.
Description: TRANS NPN DARL 60V 0.5A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 220MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 250 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 110198 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
46+0.39 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 28
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BCX55-16,115 BCX55_SER.pdf
BCX55-16,115
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 60V 1A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.25 W
auf Bestellung 11217 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
40+0.45 EUR
100+0.28 EUR
500+0.21 EUR
Mindestbestellmenge: 25
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BCX56-10,115 BCX56_SER.pdf
BCX56-10,115
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 80V 1A SOT-89
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-89
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
auf Bestellung 2121 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
48+0.37 EUR
100+0.24 EUR
500+0.17 EUR
Mindestbestellmenge: 29
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BSH103,215 BSH103.pdf
BSH103,215
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 850MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 400mV @ 1mA (Min)
Supplier Device Package: TO-236AB
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 83 pF @ 24 V
auf Bestellung 30378 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
47+0.38 EUR
100+0.22 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 34
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BZV55-C12,115 BZV55_SER.pdf
BZV55-C12,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 12V 500MW LLDS
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: LLDS; MiniMelf
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 2484 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
130+0.14 EUR
272+0.065 EUR
500+0.062 EUR
1000+0.059 EUR
Mindestbestellmenge: 91
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BZX79-C15,113 BZX79.pdf
BZX79-C15,113
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 15V 400MW ALF2
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: ALF2
Part Status: Active
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
auf Bestellung 10520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
182+0.097 EUR
424+0.042 EUR
500+0.039 EUR
1000+0.035 EUR
Mindestbestellmenge: 112
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HEF4794BT,118 HEF4794B.pdf
HEF4794BT,118
Hersteller: Nexperia USA Inc.
Description: IC LED DRIVER LINEAR 40MA 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 8
Frequency: 28MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 40mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 16-SO
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 15V
Part Status: Active
auf Bestellung 20368 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
11+1.66 EUR
25+1.51 EUR
100+1.34 EUR
250+1.26 EUR
500+1.23 EUR
Mindestbestellmenge: 8
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PMBD7000,235 PMBD7000.pdf
PMBD7000,235
Hersteller: Nexperia USA Inc.
Description: DIODE ARR GP 100V 215MA TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
auf Bestellung 42513 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
186+0.095 EUR
196+0.09 EUR
500+0.065 EUR
1000+0.048 EUR
2000+0.044 EUR
5000+0.035 EUR
Mindestbestellmenge: 112
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PMBT5551,215 PMBT5551.pdf
PMBT5551,215
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 160V 0.3A TO-236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-236AB
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 250 mW
auf Bestellung 8201 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
85+0.21 EUR
137+0.13 EUR
500+0.094 EUR
1000+0.083 EUR
Mindestbestellmenge: 53
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PMEG2010EA,115 PMEG2010EA.pdf
PMEG2010EA,115
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 20V 1A SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
Qualification: AEC-Q101
auf Bestellung 26498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
54+0.33 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.13 EUR
Mindestbestellmenge: 35
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PSSI2021SAY,115 PSSI2021SAY.pdf
PSSI2021SAY,115
Hersteller: Nexperia USA Inc.
Description: IC CURRENT SOURCE 5TSSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Function: Current Source
Voltage - Input: 75V
Current - Output: 50mA
Operating Temperature: -65°C ~ 150°C
Supplier Device Package: 5-TSSOP
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 20495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
57+0.31 EUR
64+0.28 EUR
100+0.24 EUR
250+0.22 EUR
500+0.21 EUR
1000+0.2 EUR
Mindestbestellmenge: 40
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PUMD13,115 PUMD13.pdf
PUMD13,115
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: 6-TSSOP
Part Status: Active
auf Bestellung 33400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
79+0.22 EUR
127+0.14 EUR
500+0.1 EUR
1000+0.09 EUR
Mindestbestellmenge: 48
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PUMD3,115 PUMD3.pdf
PUMD3,115
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 1NPN 1PNP 6-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: 6-TSSOP
Part Status: Active
auf Bestellung 215113 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
79+0.22 EUR
127+0.14 EUR
500+0.1 EUR
1000+0.09 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
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