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IP4302CX2/A,315 IP4302CX2/A,315 Nexperia USA Inc. IP4302CX2_A.pdf Description: TVS DIODE 2WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 2-XFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -35°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Supplier Device Package: 2-WLCSP (0.52x0.70)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14V
Power Line Protection: No
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IP4310CX8/P,135 IP4310CX8/P,135 Nexperia USA Inc. IP4310CX8_P.pdf Description: TVS DIODE 5.5VWM 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -30°C ~ 85°C (TA)
Applications: HDMI
Capacitance @ Frequency: 12pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 8-WLCSP (1.16x1.16)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Part Status: Obsolete
Produkt ist nicht verfügbar
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IP4366CX8/P,135 IP4366CX8/P,135 Nexperia USA Inc. IP4064CX8_IP4364CX8_IP4366CX8.pdf Description: FILTER RC(PI) 47 OHMSESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-WFBGA, WLCSP
Size / Dimension: 0.046" L x 0.046" W (1.16mm x 1.16mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -35°C ~ 85°C
Values: R = 47Ohms, 100Ohms, C = 17pF (Total)
Height: 0.026" (0.65mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 47, 100
ESD Protection: Yes
Number of Channels: 3
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IP4386CX4/P,315 IP4386CX4/P,315 Nexperia USA Inc. IP4085%2C4385%2C4386%2C4387%28CX4%29.pdf Description: TVS DIODE 14VWM 20VC 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -35°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 160pF @ 1MHz
Current - Peak Pulse (10/1000µs): 28A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: 4-WLCSP (0.91x0.91)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
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BUK6210-55C,118 BUK6210-55C,118 Nexperia USA Inc. BUK6210-55C.pdf Description: MOSFET N-CH 55V 78A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Qualification: AEC-Q101
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BUK6211-75C,118 BUK6211-75C,118 Nexperia USA Inc. BUK6211-75C.pdf Description: MOSFET N-CH 75V 74A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 25 V
Qualification: AEC-Q101
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BUK6217-55C,118 BUK6217-55C,118 Nexperia USA Inc. BUK6217-55C.pdf Description: MOSFET N-CH 55V 44A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 12A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Qualification: AEC-Q101
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BUK6226-75C,118 BUK6226-75C,118 Nexperia USA Inc. BUK6226-75C.pdf Description: MOSFET N-CH 75V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Qualification: AEC-Q101
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BUK625R0-40C,118 BUK625R0-40C,118 Nexperia USA Inc. BUK625R0-40C.pdf Description: MOSFET N-CH 40V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Qualification: AEC-Q101
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BUK6607-55C,118 BUK6607-55C,118 Nexperia USA Inc. BUK6607-55C.pdf Description: MOSFET N-CH 55V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
Qualification: AEC-Q101
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BUK661R6-30C,118 BUK661R6-30C,118 Nexperia USA Inc. BUK661R6-30C.pdf Description: MOSFET N-CH 30V 120A D2PAK
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BUK662R4-40C,118 BUK662R4-40C,118 Nexperia USA Inc. BUK662R4-40C.pdf Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11334 pF @ 25 V
Qualification: AEC-Q101
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BUK662R7-55C,118 BUK662R7-55C,118 Nexperia USA Inc. BUK662R7-55C.pdf Description: MOSFET N-CH 55V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V
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BUK663R7-75C,118 BUK663R7-75C,118 Nexperia USA Inc. BUK663R7-75C.pdf Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15450 pF @ 25 V
Qualification: AEC-Q101
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74AUP1G09GM,115 74AUP1G09GM,115 Nexperia USA Inc. 74AUP1G09.pdf Description: IC AND 1-CIR 2-IN 6-XSON
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 12.7ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
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74LVC1T45GM,115 74LVC1T45GM,115 Nexperia USA Inc. 74LVC_LVCH1T45.pdf Description: IC XLTR VL BIDIR 6-XSON/SOT886
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 420Mbps
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.2 V ~ 5.5 V
Voltage - VCCB: 1.2 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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PH1330AL,115 PH1330AL,115 Nexperia USA Inc. Description: MOSFET N-CH 30V 100A LFPAK
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74AVCH16T245DGG,11 74AVCH16T245DGG,11 Nexperia USA Inc. 74AVCH16T245.pdf Description: IC TRANSLATION TXRX 0.8V/3.6V
Packaging: Tube
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Translation Transceiver
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Data Rate: 380Mbps
Number of Bits per Element: 8
Current - Output High, Low: 12mA, 12mA
Supplier Device Package: 48-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 0.8 V ~ 3.6 V
Voltage - VCCB: 0.8 V ~ 3.6 V
Part Status: Obsolete
Number of Circuits: 2
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74AVCH4T245D,112 74AVCH4T245D,112 Nexperia USA Inc. 74AVCH4T245.pdf Description: IC TRANSLATION TXRX 0.8V/3.6V
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Translation Transceiver
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Number of Bits per Element: 2
Current - Output High, Low: 12mA, 12mA
Supplier Device Package: 16-SO
Part Status: Obsolete
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74AVCH4T245PW,112 74AVCH4T245PW,112 Nexperia USA Inc. 74AVCH4T245.pdf Description: IC TRANSLATION TXRX 0.8V/3.6V
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Translation Transceiver
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Number of Bits per Element: 2
Current - Output High, Low: 12mA, 12mA
Supplier Device Package: 16-TSSOP
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74HCT4851D,112 74HCT4851D,112 Nexperia USA Inc. 74HC_HCT4851.pdf Description: IC MUX 8:1 210OHM 16SO
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 210Ohm
Supplier Device Package: 16-SO
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 25ns, 80ns
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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74HCT4851PW,112 74HCT4851PW,112 Nexperia USA Inc. 74HC_HCT4851.pdf Description: IC MUX 8:1 210OHM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 210Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 25ns, 80ns
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Obsolete
Number of Circuits: 1
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74HCT4852D,112 74HCT4852D,112 Nexperia USA Inc. 74HC_HCT4852.pdf Description: IC SWITCH SP4T X 2 210OHM 16SO
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 210Ohm
Supplier Device Package: 16-SO
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 25ns, 80ns
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
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74HCT4852PW,112 74HCT4852PW,112 Nexperia USA Inc. 74HC_HCT4852.pdf Description: IC SWITCH SP4TX2 210OHM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 210Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 25ns, 80ns
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Obsolete
Number of Circuits: 2
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74LVTN16244BDGG,12 74LVTN16244BDGG,12 Nexperia USA Inc. 74LVTN16244B.pdf Description: IC BUF NON-INVERT 3.6V 48TSSOP
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BUK6507-75C,127 BUK6507-75C,127 Nexperia USA Inc. BUK6507-75C.pdf Description: MOSFET N-CH 75V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Power Dissipation (Max): 204W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
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BUK6E2R0-30C,127 BUK6E2R0-30C,127 Nexperia USA Inc. BUK6E2R0-30C.pdf Description: MOSFET N-CH 30V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: I2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 229 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14964 pF @ 25 V
Qualification: AEC-Q101
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PSMN017-80PS,127 PSMN017-80PS,127 Nexperia USA Inc. PSMN017-80PS.pdf Description: MOSFET N-CH 80V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V
auf Bestellung 5913 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.39 EUR
10+2.82 EUR
100+2.24 EUR
500+1.89 EUR
1000+1.61 EUR
2000+1.52 EUR
5000+1.48 EUR
Mindestbestellmenge: 7 Stücke
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PSMN022-30PL,127 PSMN022-30PL,127 Nexperia USA Inc. PSMN022-30PL.pdf Description: MOSFET N-CH 30V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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PSMN2R8-40PS,127 PSMN2R8-40PS,127 Nexperia USA Inc. PSMN2R8-40PS.pdf Description: MOSFET N-CH 40V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 10A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4491 pF @ 20 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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PSMN3R4-30PL,127 PSMN3R4-30PL,127 Nexperia USA Inc. PSMN3R4-30PL.pdf Description: MOSFET N-CH 30V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 10A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3907 pF @ 12 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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PSMN6R5-80PS,127 PSMN6R5-80PS,127 Nexperia USA Inc. PSMN6R5-80PS.pdf Description: MOSFET N-CH 80V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 15A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4461 pF @ 40 V
Produkt ist nicht verfügbar
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74LVC2G125GN,115 74LVC2G125GN,115 Nexperia USA Inc. 74LVC2G125.pdf Description: IC BUFF 1.65V 8-XSON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 8-XSON (1.2x1)
Part Status: Active
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74LVC2G125GN,115 74LVC2G125GN,115 Nexperia USA Inc. 74LVC2G125.pdf Description: IC BUFF 1.65V 8-XSON
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 8-XSON (1.2x1)
Part Status: Active
auf Bestellung 7853 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.9 EUR
34+0.63 EUR
38+0.56 EUR
100+0.49 EUR
250+0.45 EUR
500+0.43 EUR
1000+0.42 EUR
Mindestbestellmenge: 24 Stücke
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PSMN1R5-40PS,127 PSMN1R5-40PS,127 Nexperia USA Inc. PSMN1R5-40PS.pdf Description: MOSFET N-CH 40V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.78 EUR
10+7.16 EUR
50+5.62 EUR
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PSMN2R0-60PS,127 PSMN2R0-60PS,127 Nexperia USA Inc. PSMN2R0-60PS.pdf Description: MOSFET N-CH 60V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9997 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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PSMN1R1-30EL,127 PSMN1R1-30EL,127 Nexperia USA Inc. PSMN1R1-30EL.pdf Description: MOSFET N-CH 30V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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PSMN5R0-100ES,127 PSMN5R0-100ES,127 Nexperia USA Inc. PSMN5R0-100ES.pdf Description: MOSFET N-CH 100V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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PSMN3R5-80PS,127 PSMN3R5-80PS,127 Nexperia USA Inc. PSMN3R5-80PS.pdf Description: MOSFET N-CH 80V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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PSMN0R9-25YLC,115 PSMN0R9-25YLC,115 Nexperia USA Inc. PSMN0R9-25YLC.pdf Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 12 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.51 EUR
Mindestbestellmenge: 1500 Stücke
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PSMN1R1-25YLC,115 PSMN1R1-25YLC,115 Nexperia USA Inc. PSMN1R1-25YLC.pdf Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5287 pF @ 12 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.54 EUR
Mindestbestellmenge: 1500 Stücke
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PSMN1R2-25YLC,115 PSMN1R2-25YLC,115 Nexperia USA Inc. PSMN1R2-25YLC.pdf Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4173 pF @ 12 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.93 EUR
4500+0.82 EUR
Mindestbestellmenge: 1500 Stücke
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PSMN1R2-30YLC,115 PSMN1R2-30YLC,115 Nexperia USA Inc. PSMN1R2-30YLC.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5093 pF @ 15 V
auf Bestellung 37500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.13 EUR
4500+1 EUR
Mindestbestellmenge: 1500 Stücke
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PSMN1R0-30YLC,115 PSMN1R0-30YLC,115 Nexperia USA Inc. PSMN1R0-30YLC.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 103.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6645 pF @ 15 V
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.87 EUR
4500+1.68 EUR
Mindestbestellmenge: 1500 Stücke
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PSMN2R2-25YLC,115 PSMN2R2-25YLC,115 Nexperia USA Inc. PSMN2R2-25YLC.pdf Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2542 pF @ 12 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.81 EUR
Mindestbestellmenge: 1500 Stücke
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PSMN2R2-30YLC,115 PSMN2R2-30YLC,115 Nexperia USA Inc. PSMN2R2-30YLC.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 25A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.86 EUR
4500+0.75 EUR
Mindestbestellmenge: 1500 Stücke
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PSMN1R0-30YLC,115 PSMN1R0-30YLC,115 Nexperia USA Inc. PSMN1R0-30YLC.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 103.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6645 pF @ 15 V
auf Bestellung 14117 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.81 EUR
10+3.77 EUR
50+2.89 EUR
100+2.61 EUR
500+2.11 EUR
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PSMN1R1-25YLC,115 PSMN1R1-25YLC,115 Nexperia USA Inc. PSMN1R1-25YLC.pdf Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5287 pF @ 12 V
auf Bestellung 3082 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.9 EUR
10+3.17 EUR
50+2.4 EUR
100+2.17 EUR
500+1.74 EUR
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PSMN1R2-25YLC,115 PSMN1R2-25YLC,115 Nexperia USA Inc. PSMN1R2-25YLC.pdf Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4173 pF @ 12 V
auf Bestellung 7720 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.22 EUR
11+2.03 EUR
50+1.52 EUR
100+1.36 EUR
500+1.07 EUR
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PSMN0R9-25YLC,115 PSMN0R9-25YLC,115 Nexperia USA Inc. PSMN0R9-25YLC.pdf Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 12 V
auf Bestellung 3247 Stücke:
Lieferzeit 10-14 Tag (e)
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10+3.13 EUR
50+2.38 EUR
100+2.14 EUR
500+1.71 EUR
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PSMN1R2-30YLC,115 PSMN1R2-30YLC,115 Nexperia USA Inc. PSMN1R2-30YLC.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5093 pF @ 15 V
auf Bestellung 38765 Stücke:
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100+1.63 EUR
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PSMN2R2-25YLC,115 PSMN2R2-25YLC,115 Nexperia USA Inc. PSMN2R2-25YLC.pdf Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2542 pF @ 12 V
auf Bestellung 4370 Stücke:
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50+1.33 EUR
100+1.19 EUR
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PSMN2R2-30YLC,115 PSMN2R2-30YLC,115 Nexperia USA Inc. PSMN2R2-30YLC.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 25A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 15 V
auf Bestellung 10391 Stücke:
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50+1.33 EUR
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PSMN4R0-25YLC,115 PSMN4R0-25YLC,115 Nexperia USA Inc. PSMN4R0-25YLC.pdf Description: MOSFET N-CH 25V 84A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 12 V
Produkt ist nicht verfügbar
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PSMN2R6-30YLC,115 PSMN2R6-30YLC,115 Nexperia USA Inc. PSMN2R6-30YLC.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2435 pF @ 15 V
Produkt ist nicht verfügbar
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PSMN4R5-30YLC,115 PSMN4R5-30YLC,115 Nexperia USA Inc. PSMN4R5-30YLC.pdf Description: MOSFET N-CH 30V 84A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 15 V
Produkt ist nicht verfügbar
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PSMN2R6-30YLC,115 PSMN2R6-30YLC,115 Nexperia USA Inc. PSMN2R6-30YLC.pdf Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2435 pF @ 15 V
auf Bestellung 1371 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.84 EUR
12+1.8 EUR
50+1.33 EUR
100+1.19 EUR
500+0.93 EUR
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PSMN4R5-30YLC,115 PSMN4R5-30YLC,115 Nexperia USA Inc. PSMN4R5-30YLC.pdf Description: MOSFET N-CH 30V 84A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 15 V
auf Bestellung 692 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.12 EUR
11+1.96 EUR
50+1.46 EUR
100+1.3 EUR
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PESD3V3L5UF,115 PESD3V3L5UF,115 Nexperia USA Inc. PESDXL5UF_V_Y.pdf Description: TVS DIODE 3.3VWM 12V 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 22pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Unidirectional Channels: 5
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 25W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BZA856AVL,115 BZA856AVL,115 Nexperia USA Inc. BZA800AVL_SERIES.pdf Description: TVS DIODE 5.6VWM 5TSSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 17pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: 5-TSSOP
Unidirectional Channels: 4
Power - Peak Pulse: 6W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2550 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.75 EUR
46+0.46 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
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IP4302CX2/A,315 IP4302CX2_A.pdf
IP4302CX2/A,315
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 2WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 2-XFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -35°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Supplier Device Package: 2-WLCSP (0.52x0.70)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 14V
Power Line Protection: No
Produkt ist nicht verfügbar
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IP4310CX8/P,135 IP4310CX8_P.pdf
IP4310CX8/P,135
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.5VWM 8WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 8-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -30°C ~ 85°C (TA)
Applications: HDMI
Capacitance @ Frequency: 12pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 8-WLCSP (1.16x1.16)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Power Line Protection: Yes
Part Status: Obsolete
Produkt ist nicht verfügbar
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IP4366CX8/P,135 IP4064CX8_IP4364CX8_IP4366CX8.pdf
IP4366CX8/P,135
Hersteller: Nexperia USA Inc.
Description: FILTER RC(PI) 47 OHMSESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-WFBGA, WLCSP
Size / Dimension: 0.046" L x 0.046" W (1.16mm x 1.16mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -35°C ~ 85°C
Values: R = 47Ohms, 100Ohms, C = 17pF (Total)
Height: 0.026" (0.65mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 47, 100
ESD Protection: Yes
Number of Channels: 3
Produkt ist nicht verfügbar
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IP4386CX4/P,315 IP4085%2C4385%2C4386%2C4387%28CX4%29.pdf
IP4386CX4/P,315
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 14VWM 20VC 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -35°C ~ 85°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 160pF @ 1MHz
Current - Peak Pulse (10/1000µs): 28A (8/20µs)
Voltage - Reverse Standoff (Typ): 14V (Max)
Supplier Device Package: 4-WLCSP (0.91x0.91)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16V
Voltage - Clamping (Max) @ Ipp: 20V
Power Line Protection: No
Produkt ist nicht verfügbar
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BUK6210-55C,118 BUK6210-55C.pdf
BUK6210-55C,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 78A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 15A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6211-75C,118 BUK6211-75C.pdf
BUK6211-75C,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 74A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6217-55C,118 BUK6217-55C.pdf
BUK6217-55C,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 44A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 12A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6226-75C,118 BUK6226-75C.pdf
BUK6226-75C,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 33A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 12A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK625R0-40C,118 BUK625R0-40C.pdf
BUK625R0-40C,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6607-55C,118 BUK6607-55C.pdf
BUK6607-55C,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK661R6-30C,118 BUK661R6-30C.pdf
BUK661R6-30C,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A D2PAK
Produkt ist nicht verfügbar
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BUK662R4-40C,118 BUK662R4-40C.pdf
BUK662R4-40C,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11334 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK662R7-55C,118 BUK662R7-55C.pdf
BUK662R7-55C,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V
Produkt ist nicht verfügbar
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BUK663R7-75C,118 BUK663R7-75C.pdf
BUK663R7-75C,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15450 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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74AUP1G09GM,115 74AUP1G09.pdf
74AUP1G09GM,115
Hersteller: Nexperia USA Inc.
Description: IC AND 1-CIR 2-IN 6-XSON
Features: Open Drain
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 0.8V ~ 3.6V
Current - Output High, Low: -, 4mA
Number of Inputs: 2
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Input Logic Level - High: 1.6V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 12.7ns @ 3.3V, 30pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
5000+0.14 EUR
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74LVC1T45GM,115 74LVC_LVCH1T45.pdf
74LVC1T45GM,115
Hersteller: Nexperia USA Inc.
Description: IC XLTR VL BIDIR 6-XSON/SOT886
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 420Mbps
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.2 V ~ 5.5 V
Voltage - VCCB: 1.2 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.19 EUR
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PH1330AL,115
PH1330AL,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK
Produkt ist nicht verfügbar
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74AVCH16T245DGG,11 74AVCH16T245.pdf
74AVCH16T245DGG,11
Hersteller: Nexperia USA Inc.
Description: IC TRANSLATION TXRX 0.8V/3.6V
Packaging: Tube
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Translation Transceiver
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Data Rate: 380Mbps
Number of Bits per Element: 8
Current - Output High, Low: 12mA, 12mA
Supplier Device Package: 48-TSSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 0.8 V ~ 3.6 V
Voltage - VCCB: 0.8 V ~ 3.6 V
Part Status: Obsolete
Number of Circuits: 2
Produkt ist nicht verfügbar
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74AVCH4T245D,112 74AVCH4T245.pdf
74AVCH4T245D,112
Hersteller: Nexperia USA Inc.
Description: IC TRANSLATION TXRX 0.8V/3.6V
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Translation Transceiver
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Number of Bits per Element: 2
Current - Output High, Low: 12mA, 12mA
Supplier Device Package: 16-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
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74AVCH4T245PW,112 74AVCH4T245.pdf
74AVCH4T245PW,112
Hersteller: Nexperia USA Inc.
Description: IC TRANSLATION TXRX 0.8V/3.6V
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Translation Transceiver
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.8V ~ 3.6V
Number of Bits per Element: 2
Current - Output High, Low: 12mA, 12mA
Supplier Device Package: 16-TSSOP
Produkt ist nicht verfügbar
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74HCT4851D,112 74HC_HCT4851.pdf
74HCT4851D,112
Hersteller: Nexperia USA Inc.
Description: IC MUX 8:1 210OHM 16SO
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 210Ohm
Supplier Device Package: 16-SO
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 25ns, 80ns
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
Produkt ist nicht verfügbar
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74HCT4851PW,112 74HC_HCT4851.pdf
74HCT4851PW,112
Hersteller: Nexperia USA Inc.
Description: IC MUX 8:1 210OHM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 210Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 25ns, 80ns
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
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74HCT4852D,112 74HC_HCT4852.pdf
74HCT4852D,112
Hersteller: Nexperia USA Inc.
Description: IC SWITCH SP4T X 2 210OHM 16SO
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 210Ohm
Supplier Device Package: 16-SO
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 25ns, 80ns
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
Produkt ist nicht verfügbar
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74HCT4852PW,112 74HC_HCT4852.pdf
74HCT4852PW,112
Hersteller: Nexperia USA Inc.
Description: IC SWITCH SP4TX2 210OHM 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 210Ohm
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 4.5V ~ 5.5V
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 2Ohm
Switch Time (Ton, Toff) (Max): 25ns, 80ns
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Obsolete
Number of Circuits: 2
Produkt ist nicht verfügbar
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74LVTN16244BDGG,12 74LVTN16244B.pdf
74LVTN16244BDGG,12
Hersteller: Nexperia USA Inc.
Description: IC BUF NON-INVERT 3.6V 48TSSOP
Produkt ist nicht verfügbar
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BUK6507-75C,127 BUK6507-75C.pdf
BUK6507-75C,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 75V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 25A, 10V
Power Dissipation (Max): 204W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Produkt ist nicht verfügbar
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BUK6E2R0-30C,127 BUK6E2R0-30C.pdf
BUK6E2R0-30C,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: I2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 229 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14964 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PSMN017-80PS,127 PSMN017-80PS.pdf
PSMN017-80PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 103W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1573 pF @ 40 V
auf Bestellung 5913 Stücke:
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AnzahlPrivatkunde
7+3.39 EUR
10+2.82 EUR
100+2.24 EUR
500+1.89 EUR
1000+1.61 EUR
2000+1.52 EUR
5000+1.48 EUR
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PSMN022-30PL,127 PSMN022-30PL.pdf
PSMN022-30PL,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 5A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
Produkt ist nicht verfügbar
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PSMN2R8-40PS,127 PSMN2R8-40PS.pdf
PSMN2R8-40PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 10A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4491 pF @ 20 V
Produkt ist nicht verfügbar
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PSMN3R4-30PL,127 PSMN3R4-30PL.pdf
PSMN3R4-30PL,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 10A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3907 pF @ 12 V
Produkt ist nicht verfügbar
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PSMN6R5-80PS,127 PSMN6R5-80PS.pdf
PSMN6R5-80PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 15A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4461 pF @ 40 V
Produkt ist nicht verfügbar
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74LVC2G125GN,115 74LVC2G125.pdf
74LVC2G125GN,115
Hersteller: Nexperia USA Inc.
Description: IC BUFF 1.65V 8-XSON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 8-XSON (1.2x1)
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.38 EUR
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74LVC2G125GN,115 74LVC2G125.pdf
74LVC2G125GN,115
Hersteller: Nexperia USA Inc.
Description: IC BUFF 1.65V 8-XSON
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 8-XSON (1.2x1)
Part Status: Active
auf Bestellung 7853 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.9 EUR
34+0.63 EUR
38+0.56 EUR
100+0.49 EUR
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1000+0.42 EUR
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PSMN1R5-40PS,127 PSMN1R5-40PS.pdf
PSMN1R5-40PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.78 EUR
10+7.16 EUR
50+5.62 EUR
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PSMN2R0-60PS,127 PSMN2R0-60PS.pdf
PSMN2R0-60PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9997 pF @ 30 V
Produkt ist nicht verfügbar
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PSMN1R1-30EL,127 PSMN1R1-30EL.pdf
PSMN1R1-30EL,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
Produkt ist nicht verfügbar
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PSMN5R0-100ES,127 PSMN5R0-100ES.pdf
PSMN5R0-100ES,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PSMN3R5-80PS,127 PSMN3R5-80PS.pdf
PSMN3R5-80PS,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PSMN0R9-25YLC,115 PSMN0R9-25YLC.pdf
PSMN0R9-25YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 12 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+1.51 EUR
Mindestbestellmenge: 1500 Stücke
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PSMN1R1-25YLC,115 PSMN1R1-25YLC.pdf
PSMN1R1-25YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5287 pF @ 12 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+1.54 EUR
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PSMN1R2-25YLC,115 PSMN1R2-25YLC.pdf
PSMN1R2-25YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4173 pF @ 12 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.93 EUR
4500+0.82 EUR
Mindestbestellmenge: 1500 Stücke
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PSMN1R2-30YLC,115 PSMN1R2-30YLC.pdf
PSMN1R2-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5093 pF @ 15 V
auf Bestellung 37500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+1.13 EUR
4500+1 EUR
Mindestbestellmenge: 1500 Stücke
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PSMN1R0-30YLC,115 PSMN1R0-30YLC.pdf
PSMN1R0-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 103.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6645 pF @ 15 V
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+1.87 EUR
4500+1.68 EUR
Mindestbestellmenge: 1500 Stücke
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PSMN2R2-25YLC,115 PSMN2R2-25YLC.pdf
PSMN2R2-25YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2542 pF @ 12 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.81 EUR
Mindestbestellmenge: 1500 Stücke
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PSMN2R2-30YLC,115 PSMN2R2-30YLC.pdf
PSMN2R2-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 25A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+0.86 EUR
4500+0.75 EUR
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PSMN1R0-30YLC,115 PSMN1R0-30YLC.pdf
PSMN1R0-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 103.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6645 pF @ 15 V
auf Bestellung 14117 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.81 EUR
10+3.77 EUR
50+2.89 EUR
100+2.61 EUR
500+2.11 EUR
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PSMN1R1-25YLC,115 PSMN1R1-25YLC.pdf
PSMN1R1-25YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5287 pF @ 12 V
auf Bestellung 3082 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.9 EUR
10+3.17 EUR
50+2.4 EUR
100+2.17 EUR
500+1.74 EUR
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PSMN1R2-25YLC,115 PSMN1R2-25YLC.pdf
PSMN1R2-25YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4173 pF @ 12 V
auf Bestellung 7720 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.22 EUR
11+2.03 EUR
50+1.52 EUR
100+1.36 EUR
500+1.07 EUR
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PSMN0R9-25YLC,115 PSMN0R9-25YLC.pdf
PSMN0R9-25YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 25A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 12 V
auf Bestellung 3247 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.88 EUR
10+3.13 EUR
50+2.38 EUR
100+2.14 EUR
500+1.71 EUR
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PSMN1R2-30YLC,115 PSMN1R2-30YLC.pdf
PSMN1R2-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 25A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5093 pF @ 15 V
auf Bestellung 38765 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.8 EUR
10+2.42 EUR
50+1.82 EUR
100+1.63 EUR
500+1.3 EUR
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PSMN2R2-25YLC,115 PSMN2R2-25YLC.pdf
PSMN2R2-25YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2542 pF @ 12 V
auf Bestellung 4370 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.83 EUR
12+1.78 EUR
50+1.33 EUR
100+1.19 EUR
500+0.93 EUR
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PSMN2R2-30YLC,115 PSMN2R2-30YLC.pdf
PSMN2R2-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 25A, 10V
Power Dissipation (Max): 141W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 15 V
auf Bestellung 10391 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.83 EUR
12+1.78 EUR
50+1.33 EUR
100+1.19 EUR
500+0.93 EUR
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PSMN4R0-25YLC,115 PSMN4R0-25YLC.pdf
PSMN4R0-25YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 25V 84A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1407 pF @ 12 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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PSMN2R6-30YLC,115 PSMN2R6-30YLC.pdf
PSMN2R6-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2435 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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PSMN4R5-30YLC,115 PSMN4R5-30YLC.pdf
PSMN4R5-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 84A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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PSMN2R6-30YLC,115 PSMN2R6-30YLC.pdf
PSMN2R6-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2435 pF @ 15 V
auf Bestellung 1371 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.84 EUR
12+1.8 EUR
50+1.33 EUR
100+1.19 EUR
500+0.93 EUR
Mindestbestellmenge: 8 Stücke
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PSMN4R5-30YLC,115 PSMN4R5-30YLC.pdf
PSMN4R5-30YLC,115
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 84A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 15 V
auf Bestellung 692 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.12 EUR
11+1.96 EUR
50+1.46 EUR
100+1.3 EUR
Mindestbestellmenge: 7 Stücke
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PESD3V3L5UF,115 PESDXL5UF_V_Y.pdf
PESD3V3L5UF,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 3.3VWM 12V 6XSON
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 22pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 6-XSON, SOT886 (1.45x1)
Unidirectional Channels: 5
Voltage - Breakdown (Min): 5.3V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 25W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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BZA856AVL,115 BZA800AVL_SERIES.pdf
BZA856AVL,115
Hersteller: Nexperia USA Inc.
Description: TVS DIODE 5.6VWM 5TSSOP
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 17pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5.6V
Supplier Device Package: 5-TSSOP
Unidirectional Channels: 4
Power - Peak Pulse: 6W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
auf Bestellung 2550 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.75 EUR
46+0.46 EUR
100+0.29 EUR
500+0.21 EUR
1000+0.19 EUR
Mindestbestellmenge: 28 Stücke
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