BUK662R7-55C,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 55V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 325+ | 1.62 EUR |
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Technische Details BUK662R7-55C,118 Nexperia USA Inc.
Description: MOSFET N-CH 55V 120A D2PAK, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Power Dissipation (Max): 306W (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc).
Weitere Produktangebote BUK662R7-55C,118
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BUK662R7-55C,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 55V 120A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.8V @ 1mA Power Dissipation (Max): 306W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) |
Produkt ist nicht verfügbar |
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BUK662R7-55C,118 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 55V 120A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.8V @ 1mA Power Dissipation (Max): 306W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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| BUK662R7-55C,118 | Hersteller : Nexperia |
MOSFET N-CHAN 55V 120A |
Produkt ist nicht verfügbar |