| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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74HCT2G02DC,125 | NEXPERIA |
 Category: Gates, invertersDescription: IC: digital; NOR; Ch: 2; IN: 2; CMOS,TTL; SMD; VSSOP8; Mini Logic; HCT Type of integrated circuit: digital Kind of gate: NOR Number of channels: dual; 2 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: VSSOP8 Manufacturer series: Mini Logic Supply voltage: 2...6V DC Operating temperature: -40...125°C Kind of package: reel; tape Family: HCT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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74HCT132PW,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 40µA Kind of input: with Schmitt trigger Family: HCT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PEMZ7,315 | NEXPERIA |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 12V; 0.5A Mounting: SMD Collector-emitter voltage: 12V Power dissipation: 0.3W Polarisation: bipolar Kind of transistor: complementary pair Type of transistor: NPN / PNP Current gain: 200 Kind of package: reel; tape Case: SOT666 Frequency: 280MHz; 420MHz Collector current: 0.5A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PESD12VS1UL,315 | NEXPERIA |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; ESD; 600W; 14.5V; unidirectional; DFN1006-2,SOD882 Mounting: SMD Breakdown voltage: 14.5V Peak pulse power dissipation: 0.6kW Version: ESD Max. off-state voltage: 12V Semiconductor structure: unidirectional Leakage current: 0.1µA Case: DFN1006-2; SOD882 Type of diode: TVS Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BC54PASX | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 1A; DFN2020D-3,SOT1061D Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Case: DFN2020D-3; SOT1061D Mounting: SMD Kind of package: reel; tape Frequency: 180MHz Current gain: 63...250 |
auf Bestellung 2921 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVC541ABQ,115 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10 Type of integrated circuit: digital Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal Number of channels: 1 Number of inputs: 10 Technology: CMOS; TTL Mounting: SMD Case: DHVQFN20 Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 1.2...3.6V DC Family: LVC |
auf Bestellung 2793 Stücke: Lieferzeit 14-21 Tag (e) |
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| 74AHC126BQ,115 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; 3-state,buffer,line driver; Ch: 4; IN: 2; CMOS; SMD Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver Case: DHVQFN14 Operating temperature: -40...125°C Kind of package: reel; tape Technology: CMOS Number of inputs: 2 Family: AHC Number of channels: 4 Mounting: SMD Supply voltage: 2...5.5V DC Kind of output: 3-state |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 74LVC32ABQ,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; -40÷125°C; 40uA Type of integrated circuit: digital Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: DHVQFN14 Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 1.2V DC; 1.65...3.6V DC Family: LVC Delay time: 10.4ns Kind of gate: OR Quiescent current: 40µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 74CBTLV3245BQ,115 | NEXPERIA |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,bus switch; Ch: 8; IN: 8; SMD; DHVQFN20; CBTLV Type of integrated circuit: digital Kind of integrated circuit: 8bit; bus switch Number of channels: 8 Number of inputs: 8 Mounting: SMD Case: DHVQFN20 Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 2.3...3.6V DC Family: CBTLV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 74HCT32BQ,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 4.5÷5.5VDC Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: DHVQFN14 Operating temperature: -40...125°C Quiescent current: 40µA Delay time: 36ns Family: HCT Supply voltage: 4.5...5.5V DC Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 74AVC4T245BQ,115 | NEXPERIA |
Category: Level translators Description: IC: digital; 3-state,4bit,transceiver,translator; Ch: 2; CMOS,TTL Type of integrated circuit: digital Kind of integrated circuit: 3-state; 4bit; transceiver; translator Number of channels: 2 Technology: CMOS; TTL Mounting: SMD Case: DHVQFN16 Operating temperature: -40...125°C Kind of package: reel; tape Kind of output: 3-state Supply voltage: 0.8...3.6V DC Family: AVC Number of outputs: 8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 74CBTLV3126BQ,115 | NEXPERIA |
Category: Decoders, multiplexers, switches Description: IC: digital; 4bit,bus switch; IN: 4; SMD; DHVQFN14; CBTLV; -40÷125°C Type of integrated circuit: digital Kind of integrated circuit: 4bit; bus switch Number of inputs: 4 Mounting: SMD Case: DHVQFN14 Operating temperature: -40...125°C Kind of package: reel; tape Supply voltage: 2.3...3.6V DC Family: CBTLV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 74AHCT132BQ,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 4.5÷5.5VDC Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: DHVQFN14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 40µA Kind of input: with Schmitt trigger Family: AHCT Delay time: 10ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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74AHCT132PW,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC Type of integrated circuit: digital Kind of gate: NAND Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 40µA Kind of input: with Schmitt trigger Family: AHCT Delay time: 10ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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74AHCT74D,118 | NEXPERIA |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; SO14; AHCT; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS; TTL Mounting: SMD Case: SO14 Operating temperature: -40...125°C Family: AHCT Supply voltage: 4.5...5.5V DC Trigger: positive-edge-triggered Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| 74AHCT74BQ,115 | NEXPERIA |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; DHVQFN14; AHCT Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 2 Technology: CMOS; TTL Mounting: SMD Case: DHVQFN14 Operating temperature: -40...125°C Family: AHCT Supply voltage: 4.5...5.5V DC Trigger: positive-edge-triggered Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PNE20010ERX | NEXPERIA |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SOD123W; Ufmax: 0.93V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 25ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: SOD123W Max. forward voltage: 0.93V Max. forward impulse current: 38A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BCM857BS,115 | NEXPERIA |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 300mW; SC88,SOT363,TSSOP6 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.3W Case: SC88; SOT363; TSSOP6 Current gain: 200...450 Mounting: SMD Kind of package: reel; tape Frequency: 250Hz |
auf Bestellung 2520 Stücke: Lieferzeit 14-21 Tag (e) |
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BC846B-QR | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.25W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Current gain: 200...450 Mounting: SMD Kind of package: 7 inch reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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1PS302,115 | NEXPERIA |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 200mA; 4ns; SOT323; Ufmax: 1.2V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: double series Features of semiconductor devices: fast switching Case: SOT323 Max. forward voltage: 1.2V Max. forward impulse current: 4A Kind of package: reel; tape |
auf Bestellung 986 Stücke: Lieferzeit 14-21 Tag (e) |
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| PMEG3010AESBYL | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DSN1006-2,SOD993; SMD; 30V; 1A; 3.5ns Type of diode: Schottky rectifying Case: DSN1006-2; SOD993 Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Capacitance: 86pF Max. forward voltage: 0.48V Max. forward impulse current: 10A Kind of package: reel; tape Power dissipation: 1.78W Reverse recovery time: 3.5ns Max. load current: 4A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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74HCT373D,653 | NEXPERIA |
Category: Latches Description: IC: digital; D latch; Ch: 8; IN: 1; CMOS,TTL; 4.5÷5.5VDC; SMD; SO20 Operating temperature: -40...125°C Kind of output: 3-state Technology: CMOS; TTL Trigger: level-triggered Quiescent current: 160µA Number of inputs: 1 Kind of package: reel; tape Case: SO20 Family: HCT Kind of integrated circuit: D latch Number of channels: 8 Mounting: SMD Supply voltage: 4.5...5.5V DC Type of integrated circuit: digital |
auf Bestellung 1910 Stücke: Lieferzeit 14-21 Tag (e) |
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74LVC373APW,118 | NEXPERIA |
Category: Latches Description: IC: digital; D latch; Ch: 8; 1.2÷3.6VDC; SMD; TSSOP20; -40÷125°C; LVC Type of integrated circuit: digital Kind of integrated circuit: D latch Number of channels: 8 Supply voltage: 1.2...3.6V DC Mounting: SMD Case: TSSOP20 Operating temperature: -40...125°C Family: LVC Kind of output: 3-state Kind of package: reel; tape Integrated circuit features: 5V tolerant on inputs/outputs |
auf Bestellung 2366 Stücke: Lieferzeit 14-21 Tag (e) |
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| PMEG45U10EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 14A; 16ns Type of diode: Schottky rectifying Case: CFP15; SOT1289 Mounting: SMD Max. off-state voltage: 45V Load current: 14A Semiconductor structure: single diode Capacitance: 0.39nF Max. forward voltage: 0.49V Leakage current: 20mA Max. forward impulse current: 180A Reverse recovery time: 16ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PMEG100V060ELPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 100V; 6A Type of diode: Schottky rectifying Case: CFP15; SOT1289 Mounting: SMD Max. off-state voltage: 0.1kV Load current: 6A Semiconductor structure: single diode Max. forward voltage: 0.84V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PMEG100V080ELPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 100V; 8A Type of diode: Schottky rectifying Case: CFP15; SOT1289 Mounting: SMD Max. off-state voltage: 0.1kV Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.85V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PMEG100V100ELPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 100V; 10A Type of diode: Schottky rectifying Case: CFP15; SOT1289 Mounting: SMD Max. off-state voltage: 0.1kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.85V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PMEG40T20EPX | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: CFP15; SOT1289 Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.445V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PMEG45A10EPDAZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 1A; reel,tape Type of diode: Schottky rectifying Case: CFP15; SOT1289 Mounting: SMD Max. off-state voltage: 45V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.54V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PMEG45A10EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 1A; reel,tape Type of diode: Schottky rectifying Case: CFP15; SOT1289 Mounting: SMD Max. off-state voltage: 45V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.54V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PMEG45T15EPDAZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 21A Type of diode: Schottky rectifying Case: CFP15; SOT1289 Mounting: SMD Max. off-state voltage: 45V Load current: 21A Semiconductor structure: single diode Capacitance: 2.2nF Max. forward voltage: 0.405V Leakage current: 22mA Max. forward impulse current: 210A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PMEG45T15EPDZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 1.5A Type of diode: Schottky rectifying Case: CFP15; SOT1289 Mounting: SMD Max. off-state voltage: 45V Load current: 1.5A Semiconductor structure: single diode Capacitance: 800pF Max. forward voltage: 0.58V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PMEG45U10EPDAZ | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 1A; reel,tape Type of diode: Schottky rectifying Case: CFP15; SOT1289 Mounting: SMD Max. off-state voltage: 45V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.49V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PUSB3FR4Z | NEXPERIA |
Category: Protection diodes - arrays Description: Diode: TVS array; 9V; 7A; unidirectional; ESD; Ch: 4 Type of diode: TVS array Breakdown voltage: 9V Max. forward impulse current: 7A Semiconductor structure: unidirectional Version: ESD Mounting: SMD Case: DFN2510A-10; SOT1176-1 Leakage current: 0.1µA Number of channels: 4 Capacitance: 0.34pF Application: HDMI |
auf Bestellung 10608 Stücke: Lieferzeit 14-21 Tag (e) |
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BUK9609-40B,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 67A; Idm: 383A; 157W Mounting: SMD Pulsed drain current: 383A Power dissipation: 157W Gate charge: 32nC Polarisation: unipolar Drain current: 67A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±15V Kind of package: reel; tape Case: D2PAK; SOT404 On-state resistance: 17.1mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BUK9609-75A,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 440A; 230W Mounting: SMD Pulsed drain current: 440A Power dissipation: 230W Polarisation: unipolar Drain current: 75A Kind of channel: enhancement Drain-source voltage: 75V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape Case: D2PAK; SOT404 On-state resistance: 18.9mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PSMN6R5-80PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 470A; 210W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Pulsed drain current: 470A Power dissipation: 210W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.9mΩ Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN2R2-30YLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 141W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Power dissipation: 141W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PSMN2R6-40YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 131W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 131W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PSMN2R8-40PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 797A; 211W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Pulsed drain current: 797A Power dissipation: 211W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PSMN2R1-40PLQ | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 1075A; 293W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Pulsed drain current: 1075A Power dissipation: 293W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: THT Gate charge: 168.9nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PSMN2R0-60PS,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 120A Power dissipation: 338W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: THT Gate charge: 192nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PSMN2R7-30BL,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 730A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 730A Power dissipation: 170W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PSMN2R8-80BS,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 824A; 306W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Pulsed drain current: 824A Power dissipation: 306W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 6.12mΩ Mounting: SMD Gate charge: 139nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PSMN2R0-100SSFJ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 189A; Idm: 1070A; 341W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 189A Pulsed drain current: 1070A Power dissipation: 341W Case: LFPAK88; SOT1235 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 242nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| PSMN2R4-30MLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 70A; Idm: 580A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 70A Pulsed drain current: 580A Power dissipation: 91W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 5.3mΩ Mounting: SMD Gate charge: 51nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 Features of semiconductor devices: logic level |
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| PSMN2R0-25MLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 70A; Idm: 555A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 70A Pulsed drain current: 555A Power dissipation: 74W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 34.4nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
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| PSMN2R9-25YLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 517A; 92W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Pulsed drain current: 517A Power dissipation: 92W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 3.45mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
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| PSMN2R0-25YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 127A; Idm: 722A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 127A Pulsed drain current: 722A Power dissipation: 115W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.95mΩ Mounting: SMD Gate charge: 34.1nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
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| PSMN2R0-30YL,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 667A Power dissipation: 97W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 1.55mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
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| PSMN2R0-30YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 100A; Idm: 793A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 793A Power dissipation: 142W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
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| PSMN2R0-40YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 143A; Idm: 807A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 143A Pulsed drain current: 807A Power dissipation: 166W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 92nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
PSMN2R2-25YLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Power dissipation: 106W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 5.05mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| PSMN2R2-40YSDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 140A; Idm: 789A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 140A Pulsed drain current: 789A Power dissipation: 166W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 4.3mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PSMN2R4-30YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 625A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 625A Power dissipation: 106W Case: LFPAK56E; PowerSO8; SOT1023 On-state resistance: 4mΩ Mounting: SMD Gate charge: 31.3nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |
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| PSMN2R5-30YL,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 580A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 580A Power dissipation: 88W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 2.47mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PSMN2R5-40YLDX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 121A; Idm: 682A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 121A Pulsed drain current: 682A Power dissipation: 147W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 6.4mΩ Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhancement Technology: NextPowerS3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PSMN2R6-30YLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 575A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 100A Pulsed drain current: 575A Power dissipation: 106W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 2.35mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| PSMN2R8-25MLC,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 70A; Idm: 536A; 88W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 70A Pulsed drain current: 536A Power dissipation: 88W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 3.25mΩ Mounting: SMD Gate charge: 16.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PSMN020-30MLCX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 31.8A; Idm: 127A; 33W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 31.8A Pulsed drain current: 127A Power dissipation: 33W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 20.5mΩ Mounting: SMD Gate charge: 4.6nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 74HCT2G02DC,125 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS,TTL; SMD; VSSOP8; Mini Logic; HCT
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: dual; 2
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: VSSOP8
Manufacturer series: Mini Logic
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HCT
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 2; IN: 2; CMOS,TTL; SMD; VSSOP8; Mini Logic; HCT
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: dual; 2
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: VSSOP8
Manufacturer series: Mini Logic
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: HCT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74HCT132PW,118 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: HCT
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: HCT
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| PEMZ7,315 |
|
Hersteller: NEXPERIA
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 12V; 0.5A
Mounting: SMD
Collector-emitter voltage: 12V
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: complementary pair
Type of transistor: NPN / PNP
Current gain: 200
Kind of package: reel; tape
Case: SOT666
Frequency: 280MHz; 420MHz
Collector current: 0.5A
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 12V; 0.5A
Mounting: SMD
Collector-emitter voltage: 12V
Power dissipation: 0.3W
Polarisation: bipolar
Kind of transistor: complementary pair
Type of transistor: NPN / PNP
Current gain: 200
Kind of package: reel; tape
Case: SOT666
Frequency: 280MHz; 420MHz
Collector current: 0.5A
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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Stück im Wert von UAH
| PESD12VS1UL,315 |
|
Hersteller: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 600W; 14.5V; unidirectional; DFN1006-2,SOD882
Mounting: SMD
Breakdown voltage: 14.5V
Peak pulse power dissipation: 0.6kW
Version: ESD
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Case: DFN1006-2; SOD882
Type of diode: TVS
Number of channels: 1
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 600W; 14.5V; unidirectional; DFN1006-2,SOD882
Mounting: SMD
Breakdown voltage: 14.5V
Peak pulse power dissipation: 0.6kW
Version: ESD
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Leakage current: 0.1µA
Case: DFN1006-2; SOD882
Type of diode: TVS
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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Stück im Wert von UAH
| BC54PASX |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; DFN2020D-3,SOT1061D
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: DFN2020D-3; SOT1061D
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Current gain: 63...250
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; DFN2020D-3,SOT1061D
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: DFN2020D-3; SOT1061D
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Current gain: 63...250
auf Bestellung 2921 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 313+ | 0.27 EUR |
| 376+ | 0.23 EUR |
| 417+ | 0.2 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.18 EUR |
| 74LVC541ABQ,115 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Number of channels: 1
Number of inputs: 10
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.2...3.6V DC
Family: LVC
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Number of channels: 1
Number of inputs: 10
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 1.2...3.6V DC
Family: LVC
auf Bestellung 2793 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 107+ | 0.8 EUR |
| 121+ | 0.7 EUR |
| 144+ | 0.6 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.5 EUR |
| 74AHC126BQ,115 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 4; IN: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver
Case: DHVQFN14
Operating temperature: -40...125°C
Kind of package: reel; tape
Technology: CMOS
Number of inputs: 2
Family: AHC
Number of channels: 4
Mounting: SMD
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,buffer,line driver; Ch: 4; IN: 2; CMOS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver
Case: DHVQFN14
Operating temperature: -40...125°C
Kind of package: reel; tape
Technology: CMOS
Number of inputs: 2
Family: AHC
Number of channels: 4
Mounting: SMD
Supply voltage: 2...5.5V DC
Kind of output: 3-state
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LVC32ABQ,115 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; -40÷125°C; 40uA
Type of integrated circuit: digital
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 1.2V DC; 1.65...3.6V DC
Family: LVC
Delay time: 10.4ns
Kind of gate: OR
Quiescent current: 40µA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; -40÷125°C; 40uA
Type of integrated circuit: digital
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 1.2V DC; 1.65...3.6V DC
Family: LVC
Delay time: 10.4ns
Kind of gate: OR
Quiescent current: 40µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74CBTLV3245BQ,115 |
|
Hersteller: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,bus switch; Ch: 8; IN: 8; SMD; DHVQFN20; CBTLV
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; bus switch
Number of channels: 8
Number of inputs: 8
Mounting: SMD
Case: DHVQFN20
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 2.3...3.6V DC
Family: CBTLV
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,bus switch; Ch: 8; IN: 8; SMD; DHVQFN20; CBTLV
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; bus switch
Number of channels: 8
Number of inputs: 8
Mounting: SMD
Case: DHVQFN20
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 2.3...3.6V DC
Family: CBTLV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74HCT32BQ,115 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Operating temperature: -40...125°C
Quiescent current: 40µA
Delay time: 36ns
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Operating temperature: -40...125°C
Quiescent current: 40µA
Delay time: 36ns
Family: HCT
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 74AVC4T245BQ,115 |
|
Hersteller: NEXPERIA
Category: Level translators
Description: IC: digital; 3-state,4bit,transceiver,translator; Ch: 2; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 4bit; transceiver; translator
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN16
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 0.8...3.6V DC
Family: AVC
Number of outputs: 8
Category: Level translators
Description: IC: digital; 3-state,4bit,transceiver,translator; Ch: 2; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 4bit; transceiver; translator
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN16
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 0.8...3.6V DC
Family: AVC
Number of outputs: 8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74CBTLV3126BQ,115 |
|
Hersteller: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; IN: 4; SMD; DHVQFN14; CBTLV; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Number of inputs: 4
Mounting: SMD
Case: DHVQFN14
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 2.3...3.6V DC
Family: CBTLV
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,bus switch; IN: 4; SMD; DHVQFN14; CBTLV; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; bus switch
Number of inputs: 4
Mounting: SMD
Case: DHVQFN14
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 2.3...3.6V DC
Family: CBTLV
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74AHCT132BQ,115 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: AHCT
Delay time: 10ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: AHCT
Delay time: 10ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 74AHCT132PW,118 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: AHCT
Delay time: 10ns
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 4.5÷5.5VDC
Type of integrated circuit: digital
Kind of gate: NAND
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: AHCT
Delay time: 10ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| 74AHCT74D,118 |
|
Hersteller: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; SO14; AHCT; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Family: AHCT
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; SO14; AHCT; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Family: AHCT
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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| 74AHCT74BQ,115 |
|
Hersteller: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; DHVQFN14; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Operating temperature: -40...125°C
Family: AHCT
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Kind of package: reel; tape
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; DHVQFN14; AHCT
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Operating temperature: -40...125°C
Family: AHCT
Supply voltage: 4.5...5.5V DC
Trigger: positive-edge-triggered
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PNE20010ERX |
|
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SOD123W; Ufmax: 0.93V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD123W
Max. forward voltage: 0.93V
Max. forward impulse current: 38A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SOD123W; Ufmax: 0.93V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: SOD123W
Max. forward voltage: 0.93V
Max. forward impulse current: 38A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BCM857BS,115 |
|
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 300mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 250Hz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 300mW; SC88,SOT363,TSSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 250Hz
auf Bestellung 2520 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 139+ | 0.61 EUR |
| 192+ | 0.44 EUR |
| 234+ | 0.37 EUR |
| 277+ | 0.31 EUR |
| 325+ | 0.26 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.18 EUR |
| BC846B-QR |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1PS302,115 |
|
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 200mA; 4ns; SOT323; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Case: SOT323
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 200mA; 4ns; SOT323; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double series
Features of semiconductor devices: fast switching
Case: SOT323
Max. forward voltage: 1.2V
Max. forward impulse current: 4A
Kind of package: reel; tape
auf Bestellung 986 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 625+ | 0.13 EUR |
| 986+ | 0.087 EUR |
| PMEG3010AESBYL |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN1006-2,SOD993; SMD; 30V; 1A; 3.5ns
Type of diode: Schottky rectifying
Case: DSN1006-2; SOD993
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 86pF
Max. forward voltage: 0.48V
Max. forward impulse current: 10A
Kind of package: reel; tape
Power dissipation: 1.78W
Reverse recovery time: 3.5ns
Max. load current: 4A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DSN1006-2,SOD993; SMD; 30V; 1A; 3.5ns
Type of diode: Schottky rectifying
Case: DSN1006-2; SOD993
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 86pF
Max. forward voltage: 0.48V
Max. forward impulse current: 10A
Kind of package: reel; tape
Power dissipation: 1.78W
Reverse recovery time: 3.5ns
Max. load current: 4A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 74HCT373D,653 |
|
Hersteller: NEXPERIA
Category: Latches
Description: IC: digital; D latch; Ch: 8; IN: 1; CMOS,TTL; 4.5÷5.5VDC; SMD; SO20
Operating temperature: -40...125°C
Kind of output: 3-state
Technology: CMOS; TTL
Trigger: level-triggered
Quiescent current: 160µA
Number of inputs: 1
Kind of package: reel; tape
Case: SO20
Family: HCT
Kind of integrated circuit: D latch
Number of channels: 8
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Category: Latches
Description: IC: digital; D latch; Ch: 8; IN: 1; CMOS,TTL; 4.5÷5.5VDC; SMD; SO20
Operating temperature: -40...125°C
Kind of output: 3-state
Technology: CMOS; TTL
Trigger: level-triggered
Quiescent current: 160µA
Number of inputs: 1
Kind of package: reel; tape
Case: SO20
Family: HCT
Kind of integrated circuit: D latch
Number of channels: 8
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
auf Bestellung 1910 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 129+ | 0.67 EUR |
| 175+ | 0.49 EUR |
| 200+ | 0.43 EUR |
| 220+ | 0.39 EUR |
| 240+ | 0.36 EUR |
| 266+ | 0.32 EUR |
| 500+ | 0.3 EUR |
| 74LVC373APW,118 |
|
Hersteller: NEXPERIA
Category: Latches
Description: IC: digital; D latch; Ch: 8; 1.2÷3.6VDC; SMD; TSSOP20; -40÷125°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 1.2...3.6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Family: LVC
Kind of output: 3-state
Kind of package: reel; tape
Integrated circuit features: 5V tolerant on inputs/outputs
Category: Latches
Description: IC: digital; D latch; Ch: 8; 1.2÷3.6VDC; SMD; TSSOP20; -40÷125°C; LVC
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 1.2...3.6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Family: LVC
Kind of output: 3-state
Kind of package: reel; tape
Integrated circuit features: 5V tolerant on inputs/outputs
auf Bestellung 2366 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 209+ | 0.4 EUR |
| 261+ | 0.32 EUR |
| 291+ | 0.3 EUR |
| 321+ | 0.26 EUR |
| PMEG45U10EPDZ |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 14A; 16ns
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 45V
Load current: 14A
Semiconductor structure: single diode
Capacitance: 0.39nF
Max. forward voltage: 0.49V
Leakage current: 20mA
Max. forward impulse current: 180A
Reverse recovery time: 16ns
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 14A; 16ns
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 45V
Load current: 14A
Semiconductor structure: single diode
Capacitance: 0.39nF
Max. forward voltage: 0.49V
Leakage current: 20mA
Max. forward impulse current: 180A
Reverse recovery time: 16ns
Kind of package: reel; tape
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Im Einkaufswagen
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| PMEG100V060ELPDZ |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 100V; 6A
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 100V; 6A
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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Stück im Wert von UAH
| PMEG100V080ELPDZ |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 100V; 8A
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 100V; 8A
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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Stück im Wert von UAH
| PMEG100V100ELPDZ |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 100V; 10A
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 100V; 10A
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| PMEG40T20EPX |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.445V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.445V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| PMEG45A10EPDAZ |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PMEG45A10EPDZ |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.54V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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Stück im Wert von UAH
| PMEG45T15EPDAZ |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 21A
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 45V
Load current: 21A
Semiconductor structure: single diode
Capacitance: 2.2nF
Max. forward voltage: 0.405V
Leakage current: 22mA
Max. forward impulse current: 210A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 21A
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 45V
Load current: 21A
Semiconductor structure: single diode
Capacitance: 2.2nF
Max. forward voltage: 0.405V
Leakage current: 22mA
Max. forward impulse current: 210A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMEG45T15EPDZ |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 1.5A
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1.5A
Semiconductor structure: single diode
Capacitance: 800pF
Max. forward voltage: 0.58V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 1.5A
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1.5A
Semiconductor structure: single diode
Capacitance: 800pF
Max. forward voltage: 0.58V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PMEG45U10EPDAZ |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PUSB3FR4Z |
|
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 9V; 7A; unidirectional; ESD; Ch: 4
Type of diode: TVS array
Breakdown voltage: 9V
Max. forward impulse current: 7A
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: DFN2510A-10; SOT1176-1
Leakage current: 0.1µA
Number of channels: 4
Capacitance: 0.34pF
Application: HDMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 9V; 7A; unidirectional; ESD; Ch: 4
Type of diode: TVS array
Breakdown voltage: 9V
Max. forward impulse current: 7A
Semiconductor structure: unidirectional
Version: ESD
Mounting: SMD
Case: DFN2510A-10; SOT1176-1
Leakage current: 0.1µA
Number of channels: 4
Capacitance: 0.34pF
Application: HDMI
auf Bestellung 10608 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 313+ | 0.27 EUR |
| 388+ | 0.21 EUR |
| 435+ | 0.19 EUR |
| 521+ | 0.17 EUR |
| 582+ | 0.14 EUR |
| 625+ | 0.13 EUR |
| BUK9609-40B,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 67A; Idm: 383A; 157W
Mounting: SMD
Pulsed drain current: 383A
Power dissipation: 157W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 67A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±15V
Kind of package: reel; tape
Case: D2PAK; SOT404
On-state resistance: 17.1mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 67A; Idm: 383A; 157W
Mounting: SMD
Pulsed drain current: 383A
Power dissipation: 157W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 67A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±15V
Kind of package: reel; tape
Case: D2PAK; SOT404
On-state resistance: 17.1mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK9609-75A,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 440A; 230W
Mounting: SMD
Pulsed drain current: 440A
Power dissipation: 230W
Polarisation: unipolar
Drain current: 75A
Kind of channel: enhancement
Drain-source voltage: 75V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: D2PAK; SOT404
On-state resistance: 18.9mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 440A; 230W
Mounting: SMD
Pulsed drain current: 440A
Power dissipation: 230W
Polarisation: unipolar
Drain current: 75A
Kind of channel: enhancement
Drain-source voltage: 75V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: D2PAK; SOT404
On-state resistance: 18.9mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PSMN6R5-80PS,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 470A; 210W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 470A
Power dissipation: 210W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 470A; 210W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 470A
Power dissipation: 210W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 4.4 EUR |
| 23+ | 3.77 EUR |
| PSMN2R2-30YLC,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 141W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 141W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 141W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 141W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN2R6-40YS,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 131W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 131W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 131W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 131W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| PSMN2R8-40PS,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 797A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 797A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 797A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 797A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
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Im Einkaufswagen
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| PSMN2R1-40PLQ |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 1075A; 293W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 1075A
Power dissipation: 293W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 168.9nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 1075A; 293W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 1075A
Power dissipation: 293W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 168.9nC
Kind of package: tube
Kind of channel: enhancement
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Stück im Wert von UAH
| PSMN2R0-60PS,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Kind of channel: enhancement
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| PSMN2R7-30BL,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 730A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 730A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 730A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 730A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PSMN2R8-80BS,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 824A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.12mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 824A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.12mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN2R0-100SSFJ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 189A; Idm: 1070A; 341W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 189A
Pulsed drain current: 1070A
Power dissipation: 341W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 242nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 189A; Idm: 1070A; 341W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 189A
Pulsed drain current: 1070A
Power dissipation: 341W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 242nC
Kind of package: reel; tape
Kind of channel: enhancement
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Stück im Wert von UAH
| PSMN2R4-30MLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 70A; Idm: 580A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Pulsed drain current: 580A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 70A; Idm: 580A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Pulsed drain current: 580A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Features of semiconductor devices: logic level
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Stück im Wert von UAH
| PSMN2R0-25MLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 70A; Idm: 555A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 555A
Power dissipation: 74W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 70A; Idm: 555A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 555A
Power dissipation: 74W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PSMN2R9-25YLC,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 517A; 92W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 517A
Power dissipation: 92W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 517A; 92W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 517A
Power dissipation: 92W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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Stück im Wert von UAH
| PSMN2R0-25YLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 127A; Idm: 722A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 127A
Pulsed drain current: 722A
Power dissipation: 115W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.95mΩ
Mounting: SMD
Gate charge: 34.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 127A; Idm: 722A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 127A
Pulsed drain current: 722A
Power dissipation: 115W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.95mΩ
Mounting: SMD
Gate charge: 34.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Produkt ist nicht verfügbar
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| PSMN2R0-30YL,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 667A
Power dissipation: 97W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 667A
Power dissipation: 97W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PSMN2R0-30YLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 100A; Idm: 793A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 793A
Power dissipation: 142W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 100A; Idm: 793A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 793A
Power dissipation: 142W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PSMN2R0-40YLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 143A; Idm: 807A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 143A
Pulsed drain current: 807A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 143A; Idm: 807A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 143A
Pulsed drain current: 807A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Produkt ist nicht verfügbar
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| PSMN2R2-25YLC,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PSMN2R2-40YSDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 140A; Idm: 789A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 789A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 140A; Idm: 789A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 789A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PSMN2R4-30YLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 625A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 625A
Power dissipation: 106W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 31.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 625A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 625A
Power dissipation: 106W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 31.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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Stück im Wert von UAH
| PSMN2R5-30YL,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 580A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 580A
Power dissipation: 88W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.47mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 580A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 580A
Power dissipation: 88W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.47mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PSMN2R5-40YLDX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 121A; Idm: 682A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 121A
Pulsed drain current: 682A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 121A; Idm: 682A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 121A
Pulsed drain current: 682A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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Stück im Wert von UAH
| PSMN2R6-30YLC,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 575A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 575A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.35mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 575A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 575A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.35mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN2R8-25MLC,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 70A; Idm: 536A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 536A
Power dissipation: 88W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 3.25mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 70A; Idm: 536A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 536A
Power dissipation: 88W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 3.25mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN020-30MLCX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31.8A; Idm: 127A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31.8A
Pulsed drain current: 127A
Power dissipation: 33W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 31.8A; Idm: 127A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31.8A
Pulsed drain current: 127A
Power dissipation: 33W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 20.5mΩ
Mounting: SMD
Gate charge: 4.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH