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MJE3439G MJE3439G onsemi mje3439-d.pdf Description: TRANS NPN 350V 0.3A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 20mA, 10V
Frequency - Transition: 15MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 15 W
Produkt ist nicht verfügbar
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MJE344G MJE344G onsemi mje344-d.pdf Description: TRANS NPN 200V 0.5A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 15MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 20 W
Produkt ist nicht verfügbar
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MJE350G MJE350G onsemi mje350-d.pdf Description: TRANS PNP 300V 0.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 20 W
auf Bestellung 6186 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.64 EUR
13+1.68 EUR
100+1.11 EUR
500+0.87 EUR
1000+0.79 EUR
2000+0.73 EUR
5000+0.65 EUR
Mindestbestellmenge: 8 Stücke
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MJE371G MJE371G onsemi mje371-d.pdf Description: TRANS PNP 40V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 1V
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 40 W
auf Bestellung 581 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.96 EUR
13+1.62 EUR
500+1.07 EUR
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MJE4343G MJE4343G onsemi mje4343-d.pdf Description: TRANS NPN 160V 16A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 2A, 16A
Current - Collector Cutoff (Max): 750µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 2V
Frequency - Transition: 1MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 125 W
Produkt ist nicht verfügbar
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MJE4353G MJE4353G onsemi mje4343-d.pdf Description: TRANS PNP 160V 16A SOT-93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 2A, 16A
Current - Collector Cutoff (Max): 750µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 2V
Frequency - Transition: 1MHz
Supplier Device Package: SOT-93
Part Status: Obsolete
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 125 W
Produkt ist nicht verfügbar
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MJE5730G MJE5730G onsemi mje5730-d.pdf Description: TRANS PNP 300V 1A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 40 W
auf Bestellung 216 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.52 EUR
50+1.69 EUR
100+1.51 EUR
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MJE5731AG MJE5731AG onsemi mje5730-d.pdf Description: TRANS PNP 375V 1A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 375 V
Power - Max: 40 W
auf Bestellung 316 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.25 EUR
50+1.55 EUR
100+1.38 EUR
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MJE5742G MJE5742G onsemi mje5740-d.pdf Description: TRANS NPN DARL 400V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 400mA, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 5V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
auf Bestellung 2170 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.93 EUR
50+2.42 EUR
100+2.17 EUR
500+1.74 EUR
1000+1.61 EUR
2000+1.49 EUR
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MJE5850G MJE5850G onsemi mje5850-d.pdf Description: TRANS PNP 300V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 80 W
Produkt ist nicht verfügbar
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MJE5851G MJE5851G onsemi mje5850-d.pdf Description: TRANS PNP 350V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 80 W
Produkt ist nicht verfügbar
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MJE5852G MJE5852G onsemi mje5850-d.pdf Description: TRANS PNP 400V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
auf Bestellung 680 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.96 EUR
50+4.08 EUR
100+3.71 EUR
500+3.06 EUR
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MJE700G MJE700G onsemi mje700-d.pdf Description: TRANS PNP DARL 60V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
Produkt ist nicht verfügbar
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MJE702G MJE702G onsemi mje700-d.pdf Description: TRANS PNP DARL 80V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Produkt ist nicht verfügbar
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MJE800G MJE800G onsemi mje700-d.pdf Description: TRANS NPN DARL 60V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
Produkt ist nicht verfügbar
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MJE802G MJE802G onsemi mje700-d.pdf Description: TRANS NPN DARL 80V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Produkt ist nicht verfügbar
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MJE803G MJE803G onsemi mje700-d.pdf Description: TRANS NPN DARL 80V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Produkt ist nicht verfügbar
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MJF122G MJF122G onsemi mjf122-d.pdf Description: TRANS NPN DARL 100V 5A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 20mA, 5A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 3V
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
6+4 EUR
50+1.93 EUR
100+1.73 EUR
Mindestbestellmenge: 6 Stücke
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MJF127G MJF127G onsemi mjf122-d.pdf Description: TRANS PNP DARL 100V 5A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 20mA, 5A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 3V
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
auf Bestellung 6282 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.43 EUR
50+2.68 EUR
100+2.4 EUR
500+1.94 EUR
1000+1.8 EUR
2000+1.67 EUR
5000+1.52 EUR
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MJF15030G MJF15030G onsemi mjf15030-d.pdf Description: TRANS NPN 150V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 2 W
auf Bestellung 684 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.57 EUR
50+2.76 EUR
100+2.49 EUR
500+2 EUR
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MJF15031G MJF15031G onsemi mjf15030-d.pdf Description: TRANS PNP 150V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 2 W
auf Bestellung 1941 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.49 EUR
50+2.73 EUR
100+2.45 EUR
500+1.99 EUR
1000+1.83 EUR
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MJF18004G MJF18004G onsemi mje18004-d.pdf description Description: TRANS NPN 450V 5A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 500mA, 2.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 300mA, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220FP
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 35 W
auf Bestellung 2479 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.26 EUR
50+2.59 EUR
100+2.33 EUR
500+1.88 EUR
1000+1.74 EUR
2000+1.61 EUR
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MJF3055G MJF3055G onsemi mjf3055-d.pdf Description: TRANS NPN 90V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.3A, 10A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: TO-220FP
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 2 W
auf Bestellung 424 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.76 EUR
50+2.32 EUR
100+2.08 EUR
Mindestbestellmenge: 5 Stücke
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MJF44H11G MJF44H11G onsemi mjf44h11-d.pdf Description: TRANS NPN 80V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220FP
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 2107 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.87 EUR
50+2.93 EUR
100+2.64 EUR
500+2.14 EUR
1000+1.99 EUR
2000+1.84 EUR
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MJF6388G MJF6388G onsemi mjf6388-d.pdf Description: TRANS NPN DARL 100V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 3A, 4V
Supplier Device Package: TO-220FP
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
auf Bestellung 6064 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.74 EUR
50+2.83 EUR
100+2.56 EUR
500+2.06 EUR
1000+1.9 EUR
2000+1.76 EUR
5000+1.62 EUR
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MJF6668G MJF6668G onsemi mjf6388-d.pdf Description: TRANS PNP DARL 100V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 3A, 4V
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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MJH11017G MJH11017G onsemi mjh11017-d.pdf Description: TRANS PNP DARL 150V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 150 W
auf Bestellung 346 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.9 EUR
30+7.35 EUR
120+6.13 EUR
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MJH11019G MJH11019G onsemi mjh11017-d.pdf Description: TRANS PNP DARL 200V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 150 W
auf Bestellung 189 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.57 EUR
30+6.54 EUR
120+5.44 EUR
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MJH11020G MJH11020G onsemi mjh11017-d.pdf Description: TRANS NPN DARL 200V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 150 W
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MJH11021G MJH11021G onsemi mjh11017-d.pdf Description: TRANS PNP DARL 250V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W
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MJH11022G MJH11022G onsemi mjh11017-d.pdf Description: TRANS NPN DARL 250V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W
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MJH6284G MJH6284G onsemi mjh6284-d.pdf Description: TRANS NPN DARL 100V 20A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
Frequency - Transition: 4MHz
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 160 W
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MJL1302AG MJL1302AG onsemi mjl3281a-d.pdf Description: TRANS PNP 260V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 260 V
Power - Max: 200 W
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MJL21193G MJL21193G onsemi mjl21193-d.pdf description Description: TRANS PNP 250V 16A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 200 W
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500+5.65 EUR
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MJL21194G MJL21194G onsemi mjl21193-d.pdf description Description: TRANS NPN 250V 16A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 200 W
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MJL21195G MJL21195G onsemi mjl21195-d.pdf Description: TRANS PNP 250V 16A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 200 W
Produkt ist nicht verfügbar
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MJL21196G MJL21196G onsemi mjl21195-d.pdf Description: TRANS NPN 250V 16A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 200 W
auf Bestellung 142 Stücke:
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2+11.3 EUR
25+6.59 EUR
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MJL3281AG MJL3281AG onsemi mjl3281a-d.pdf Description: TRANS NPN 260V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 260 V
Power - Max: 200 W
auf Bestellung 2644 Stücke:
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2+13.34 EUR
25+7.84 EUR
100+6.53 EUR
500+5.49 EUR
1000+5.15 EUR
2000+5.13 EUR
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MJL4281AG MJL4281AG onsemi mjl4281a-d.pdf Description: TRANS NPN 350V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V
Frequency - Transition: 35MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 230 W
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2+15.84 EUR
25+9.44 EUR
100+7.91 EUR
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MJL4302AG MJL4302AG onsemi mjl4281a-d.pdf Description: TRANS PNP 350V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V
Frequency - Transition: 35MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 230 W
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25+8.47 EUR
100+7.1 EUR
500+6.1 EUR
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MM3Z12VST1G MM3Z12VST1G onsemi mm3z2v4st1-d.pdf Description: DIODE ZENER 12V 300MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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3000+0.067 EUR
6000+0.06 EUR
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MM3Z18VST1G MM3Z18VST1G onsemi mm3z2v4st1-d.pdf Description: DIODE ZENER 18V 300MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
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3000+0.063 EUR
6000+0.056 EUR
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MM3Z6V2T1G MM3Z6V2T1G onsemi MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf Description: DIODE ZENER 6.2V 300MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
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3000+0.058 EUR
6000+0.051 EUR
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MM5Z4V7ST1G MM5Z4V7ST1G onsemi mm5z2v4st1-d.pdf Description: DIODE ZENER 4.7V 500MW SOD523
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3000+0.094 EUR
6000+0.083 EUR
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MM5Z5V1ST1G MM5Z5V1ST1G onsemi mm5z2v4st1-d.pdf Description: DIODE ZENER 5.1V 500MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Produkt ist nicht verfügbar
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MM5Z5V6ST1G MM5Z5V6ST1G onsemi mm5z2v4st1-d.pdf Description: DIODE ZENER 5.61V 500MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.61 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
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3000+0.052 EUR
6000+0.049 EUR
9000+0.046 EUR
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MMBD101LT1G MMBD101LT1G onsemi mbd101-d.pdf Description: DIODE SCHOTTKY 7V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power Dissipation (Max): 225 mW
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3000+0.087 EUR
6000+0.084 EUR
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MMBD2835LT1G MMBD2835LT1G onsemi mmbd2835lt1-d.pdf Description: DIODE ARRAY GP 35V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
auf Bestellung 30000 Stücke:
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3000+0.081 EUR
6000+0.068 EUR
9000+0.06 EUR
15000+0.056 EUR
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MMBD2836LT1G MMBD2836LT1G onsemi mmbd2835lt1-d.pdf Description: DIODE ARRAY GP 75V 100MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 2133 Stücke:
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72+0.3 EUR
122+0.17 EUR
171+0.12 EUR
197+0.11 EUR
500+0.077 EUR
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MMBD2837LT1G MMBD2837LT1G onsemi mmbd2837lt1-d.pdf Description: DIODE ARRAY GP 30V 100MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
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59+0.36 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.14 EUR
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MMBD2838LT1G MMBD2838LT1G onsemi mmbd2837lt1-d.pdf Description: DIODE ARRAY GP 50V 100MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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72+0.3 EUR
118+0.18 EUR
167+0.13 EUR
192+0.11 EUR
500+0.079 EUR
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MMBD301LT1G MMBD301LT1G onsemi mbd301-d.pdf Description: DIODE SCHOTTKY 30V 200MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.5pF @ 15V, 1MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power Dissipation (Max): 200 mW
auf Bestellung 27000 Stücke:
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3000+0.051 EUR
6000+0.049 EUR
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MMBD352LT1G MMBD352LT1G onsemi mmbd352lt1-d.pdf Description: DIODE SCHOTTKY 7V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 225 mW
Produkt ist nicht verfügbar
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MMBD353LT1G MMBD353LT1G onsemi mmbd352lt1-d.pdf Description: DIODE SCHOTTKY 7V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 225 mW
auf Bestellung 6000 Stücke:
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3000+0.067 EUR
6000+0.064 EUR
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MMBD354LT1G MMBD354LT1G onsemi mmbd352lt1-d.pdf Description: DIODE SCHOTTKY 7V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power Dissipation (Max): 225 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
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MMBD6050LT1G MMBD6050LT1G onsemi mmbd6050lt1-d.pdf Description: DIODE STANDARD 70V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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MMBD6100LT1G MMBD6100LT1G onsemi mmbd6100lt1-d.pdf Description: DIODE ARRAY GP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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MMBD7000LT1G MMBD7000LT1G onsemi mmbd7000lt1-d.pdf Description: DIODE ARR GP 100V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
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MMBD701LT1G MMBD701LT1G onsemi mbd701-d.pdf Description: DIODE SCHOTTKY 70V 200MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Voltage - Peak Reverse (Max): 70V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power Dissipation (Max): 200 mW
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MMBD717LT1G MMBD717LT1G onsemi mmbd717lt1-d.pdf Description: DIODE ARRAY SCHOTT 20V SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
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3000+0.11 EUR
6000+0.099 EUR
9000+0.094 EUR
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MJE3439G mje3439-d.pdf
MJE3439G
Hersteller: onsemi
Description: TRANS NPN 350V 0.3A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 20mA, 10V
Frequency - Transition: 15MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 15 W
Produkt ist nicht verfügbar
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MJE344G mje344-d.pdf
MJE344G
Hersteller: onsemi
Description: TRANS NPN 200V 0.5A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 15MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 20 W
Produkt ist nicht verfügbar
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MJE350G mje350-d.pdf
MJE350G
Hersteller: onsemi
Description: TRANS PNP 300V 0.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 20 W
auf Bestellung 6186 Stücke:
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8+2.64 EUR
13+1.68 EUR
100+1.11 EUR
500+0.87 EUR
1000+0.79 EUR
2000+0.73 EUR
5000+0.65 EUR
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MJE371G mje371-d.pdf
MJE371G
Hersteller: onsemi
Description: TRANS PNP 40V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 1V
Supplier Device Package: TO-126
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 40 W
auf Bestellung 581 Stücke:
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11+1.96 EUR
13+1.62 EUR
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MJE4343G mje4343-d.pdf
MJE4343G
Hersteller: onsemi
Description: TRANS NPN 160V 16A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 2A, 16A
Current - Collector Cutoff (Max): 750µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 2V
Frequency - Transition: 1MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 125 W
Produkt ist nicht verfügbar
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MJE4353G mje4343-d.pdf
MJE4353G
Hersteller: onsemi
Description: TRANS PNP 160V 16A SOT-93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 2A, 16A
Current - Collector Cutoff (Max): 750µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 2V
Frequency - Transition: 1MHz
Supplier Device Package: SOT-93
Part Status: Obsolete
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 125 W
Produkt ist nicht verfügbar
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MJE5730G mje5730-d.pdf
MJE5730G
Hersteller: onsemi
Description: TRANS PNP 300V 1A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 40 W
auf Bestellung 216 Stücke:
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AnzahlPrivatkunde
6+3.52 EUR
50+1.69 EUR
100+1.51 EUR
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MJE5731AG mje5730-d.pdf
MJE5731AG
Hersteller: onsemi
Description: TRANS PNP 375V 1A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 375 V
Power - Max: 40 W
auf Bestellung 316 Stücke:
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AnzahlPrivatkunde
7+3.25 EUR
50+1.55 EUR
100+1.38 EUR
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MJE5742G mje5740-d.pdf
MJE5742G
Hersteller: onsemi
Description: TRANS NPN DARL 400V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 400mA, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 5V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
auf Bestellung 2170 Stücke:
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AnzahlPrivatkunde
5+4.93 EUR
50+2.42 EUR
100+2.17 EUR
500+1.74 EUR
1000+1.61 EUR
2000+1.49 EUR
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MJE5850G mje5850-d.pdf
MJE5850G
Hersteller: onsemi
Description: TRANS PNP 300V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 80 W
Produkt ist nicht verfügbar
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MJE5851G mje5850-d.pdf
MJE5851G
Hersteller: onsemi
Description: TRANS PNP 350V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 80 W
Produkt ist nicht verfügbar
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MJE5852G mje5850-d.pdf
MJE5852G
Hersteller: onsemi
Description: TRANS PNP 400V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 8A
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
auf Bestellung 680 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.96 EUR
50+4.08 EUR
100+3.71 EUR
500+3.06 EUR
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MJE700G mje700-d.pdf
MJE700G
Hersteller: onsemi
Description: TRANS PNP DARL 60V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
Produkt ist nicht verfügbar
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MJE702G mje700-d.pdf
MJE702G
Hersteller: onsemi
Description: TRANS PNP DARL 80V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Produkt ist nicht verfügbar
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MJE800G mje700-d.pdf
MJE800G
Hersteller: onsemi
Description: TRANS NPN DARL 60V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
Produkt ist nicht verfügbar
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MJE802G mje700-d.pdf
MJE802G
Hersteller: onsemi
Description: TRANS NPN DARL 80V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Produkt ist nicht verfügbar
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MJE803G mje700-d.pdf
MJE803G
Hersteller: onsemi
Description: TRANS NPN DARL 80V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Produkt ist nicht verfügbar
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MJF122G mjf122-d.pdf
MJF122G
Hersteller: onsemi
Description: TRANS NPN DARL 100V 5A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 20mA, 5A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 3V
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4 EUR
50+1.93 EUR
100+1.73 EUR
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MJF127G mjf122-d.pdf
MJF127G
Hersteller: onsemi
Description: TRANS PNP DARL 100V 5A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 20mA, 5A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 3V
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
auf Bestellung 6282 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.43 EUR
50+2.68 EUR
100+2.4 EUR
500+1.94 EUR
1000+1.8 EUR
2000+1.67 EUR
5000+1.52 EUR
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MJF15030G mjf15030-d.pdf
MJF15030G
Hersteller: onsemi
Description: TRANS NPN 150V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 2 W
auf Bestellung 684 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.57 EUR
50+2.76 EUR
100+2.49 EUR
500+2 EUR
Mindestbestellmenge: 4 Stücke
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MJF15031G mjf15030-d.pdf
MJF15031G
Hersteller: onsemi
Description: TRANS PNP 150V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 2 W
auf Bestellung 1941 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.49 EUR
50+2.73 EUR
100+2.45 EUR
500+1.99 EUR
1000+1.83 EUR
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MJF18004G description mje18004-d.pdf
MJF18004G
Hersteller: onsemi
Description: TRANS NPN 450V 5A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 500mA, 2.5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 300mA, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220FP
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 35 W
auf Bestellung 2479 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.26 EUR
50+2.59 EUR
100+2.33 EUR
500+1.88 EUR
1000+1.74 EUR
2000+1.61 EUR
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MJF3055G mjf3055-d.pdf
MJF3055G
Hersteller: onsemi
Description: TRANS NPN 90V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.3A, 10A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: TO-220FP
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 2 W
auf Bestellung 424 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.76 EUR
50+2.32 EUR
100+2.08 EUR
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MJF44H11G mjf44h11-d.pdf
MJF44H11G
Hersteller: onsemi
Description: TRANS NPN 80V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220FP
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 2107 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.87 EUR
50+2.93 EUR
100+2.64 EUR
500+2.14 EUR
1000+1.99 EUR
2000+1.84 EUR
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MJF6388G mjf6388-d.pdf
MJF6388G
Hersteller: onsemi
Description: TRANS NPN DARL 100V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 3A, 4V
Supplier Device Package: TO-220FP
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
auf Bestellung 6064 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.74 EUR
50+2.83 EUR
100+2.56 EUR
500+2.06 EUR
1000+1.9 EUR
2000+1.76 EUR
5000+1.62 EUR
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MJF6668G mjf6388-d.pdf
MJF6668G
Hersteller: onsemi
Description: TRANS PNP DARL 100V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3000 @ 3A, 4V
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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MJH11017G mjh11017-d.pdf
MJH11017G
Hersteller: onsemi
Description: TRANS PNP DARL 150V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 150 W
auf Bestellung 346 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.9 EUR
30+7.35 EUR
120+6.13 EUR
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MJH11019G mjh11017-d.pdf
MJH11019G
Hersteller: onsemi
Description: TRANS PNP DARL 200V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 150 W
auf Bestellung 189 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.57 EUR
30+6.54 EUR
120+5.44 EUR
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MJH11020G mjh11017-d.pdf
MJH11020G
Hersteller: onsemi
Description: TRANS NPN DARL 200V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 150 W
auf Bestellung 208 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.01 EUR
30+7.45 EUR
120+6.22 EUR
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MJH11021G mjh11017-d.pdf
MJH11021G
Hersteller: onsemi
Description: TRANS PNP DARL 250V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W
auf Bestellung 687 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.25 EUR
30+6.35 EUR
120+5.28 EUR
510+4.5 EUR
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MJH11022G mjh11017-d.pdf
MJH11022G
Hersteller: onsemi
Description: TRANS NPN DARL 250V 15A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 150mA, 15A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 10A, 5V
Frequency - Transition: 3MHz
Supplier Device Package: TO-247-3
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W
auf Bestellung 1030 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.85 EUR
30+6.74 EUR
120+5.6 EUR
510+4.78 EUR
1020+4.47 EUR
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MJH6284G mjh6284-d.pdf
MJH6284G
Hersteller: onsemi
Description: TRANS NPN DARL 100V 20A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 10A, 3V
Frequency - Transition: 4MHz
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 160 W
auf Bestellung 2240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.95 EUR
30+6.19 EUR
120+5.14 EUR
510+4.37 EUR
1020+4.08 EUR
2010+3.94 EUR
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MJL1302AG mjl3281a-d.pdf
MJL1302AG
Hersteller: onsemi
Description: TRANS PNP 260V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 260 V
Power - Max: 200 W
auf Bestellung 336 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.07 EUR
25+7.68 EUR
100+6.39 EUR
Mindestbestellmenge: 2 Stücke
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MJL21193G description mjl21193-d.pdf
MJL21193G
Hersteller: onsemi
Description: TRANS PNP 250V 16A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 200 W
auf Bestellung 1676 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.7 EUR
25+8.07 EUR
100+6.74 EUR
500+5.65 EUR
1000+5.31 EUR
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MJL21194G description mjl21193-d.pdf
MJL21194G
Hersteller: onsemi
Description: TRANS NPN 250V 16A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 200 W
auf Bestellung 602 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.72 EUR
25+8.09 EUR
100+6.75 EUR
500+5.66 EUR
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MJL21195G mjl21195-d.pdf
MJL21195G
Hersteller: onsemi
Description: TRANS PNP 250V 16A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 200 W
Produkt ist nicht verfügbar
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MJL21196G mjl21195-d.pdf
MJL21196G
Hersteller: onsemi
Description: TRANS NPN 250V 16A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 200 W
auf Bestellung 142 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.3 EUR
25+6.59 EUR
100+5.47 EUR
Mindestbestellmenge: 2 Stücke
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MJL3281AG mjl3281a-d.pdf
MJL3281AG
Hersteller: onsemi
Description: TRANS NPN 260V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1A, 10A
Current - Collector Cutoff (Max): 50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 260 V
Power - Max: 200 W
auf Bestellung 2644 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.34 EUR
25+7.84 EUR
100+6.53 EUR
500+5.49 EUR
1000+5.15 EUR
2000+5.13 EUR
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MJL4281AG mjl4281a-d.pdf
MJL4281AG
Hersteller: onsemi
Description: TRANS NPN 350V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V
Frequency - Transition: 35MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 230 W
auf Bestellung 322 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+15.84 EUR
25+9.44 EUR
100+7.91 EUR
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MJL4302AG mjl4281a-d.pdf
MJL4302AG
Hersteller: onsemi
Description: TRANS PNP 350V 15A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 800mA, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5A, 5V
Frequency - Transition: 35MHz
Supplier Device Package: TO-264
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 230 W
auf Bestellung 977 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.24 EUR
25+8.47 EUR
100+7.1 EUR
500+6.1 EUR
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MM3Z12VST1G mm3z2v4st1-d.pdf
MM3Z12VST1G
Hersteller: onsemi
Description: DIODE ZENER 12V 300MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.067 EUR
6000+0.06 EUR
Mindestbestellmenge: 3000 Stücke
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MM3Z18VST1G mm3z2v4st1-d.pdf
MM3Z18VST1G
Hersteller: onsemi
Description: DIODE ZENER 18V 300MW SOD323
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
auf Bestellung 8300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.063 EUR
6000+0.056 EUR
Mindestbestellmenge: 3000 Stücke
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MM3Z6V2T1G MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf
MM3Z6V2T1G
Hersteller: onsemi
Description: DIODE ZENER 6.2V 300MW SOD323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-323
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 4 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.058 EUR
6000+0.051 EUR
Mindestbestellmenge: 3000 Stücke
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MM5Z4V7ST1G mm5z2v4st1-d.pdf
MM5Z4V7ST1G
Hersteller: onsemi
Description: DIODE ZENER 4.7V 500MW SOD523
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.094 EUR
6000+0.083 EUR
Mindestbestellmenge: 3000 Stücke
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MM5Z5V1ST1G mm5z2v4st1-d.pdf
MM5Z5V1ST1G
Hersteller: onsemi
Description: DIODE ZENER 5.1V 500MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-523
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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MM5Z5V6ST1G mm5z2v4st1-d.pdf
MM5Z5V6ST1G
Hersteller: onsemi
Description: DIODE ZENER 5.61V 500MW SOD523
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.61 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-523
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.052 EUR
6000+0.049 EUR
9000+0.046 EUR
Mindestbestellmenge: 3000 Stücke
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MMBD101LT1G mbd101-d.pdf
MMBD101LT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 7V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power Dissipation (Max): 225 mW
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.087 EUR
6000+0.084 EUR
Mindestbestellmenge: 3000 Stücke
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MMBD2835LT1G mmbd2835lt1-d.pdf
MMBD2835LT1G
Hersteller: onsemi
Description: DIODE ARRAY GP 35V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.081 EUR
6000+0.068 EUR
9000+0.06 EUR
15000+0.056 EUR
30000+0.051 EUR
Mindestbestellmenge: 3000 Stücke
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MMBD2836LT1G mmbd2835lt1-d.pdf
MMBD2836LT1G
Hersteller: onsemi
Description: DIODE ARRAY GP 75V 100MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 2133 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
122+0.17 EUR
171+0.12 EUR
197+0.11 EUR
500+0.077 EUR
Mindestbestellmenge: 72 Stücke
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MMBD2837LT1G mmbd2837lt1-d.pdf
MMBD2837LT1G
Hersteller: onsemi
Description: DIODE ARRAY GP 30V 100MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 30 V
auf Bestellung 19236 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+0.61 EUR
59+0.36 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.14 EUR
Mindestbestellmenge: 35 Stücke
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MMBD2838LT1G mmbd2837lt1-d.pdf
MMBD2838LT1G
Hersteller: onsemi
Description: DIODE ARRAY GP 50V 100MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 4236 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
118+0.18 EUR
167+0.13 EUR
192+0.11 EUR
500+0.079 EUR
Mindestbestellmenge: 72 Stücke
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MMBD301LT1G mbd301-d.pdf
MMBD301LT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 200MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1.5pF @ 15V, 1MHz
Voltage - Peak Reverse (Max): 30V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power Dissipation (Max): 200 mW
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.051 EUR
6000+0.049 EUR
Mindestbestellmenge: 3000 Stücke
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MMBD352LT1G mmbd352lt1-d.pdf
MMBD352LT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 7V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 225 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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MMBD353LT1G mmbd352lt1-d.pdf
MMBD353LT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 7V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Series Connection
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 225 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.067 EUR
6000+0.064 EUR
Mindestbestellmenge: 3000 Stücke
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MMBD354LT1G mmbd352lt1-d.pdf
MMBD354LT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 7V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - 1 Pair Common Cathode
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 1pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power Dissipation (Max): 225 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.12 EUR
Mindestbestellmenge: 3000 Stücke
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MMBD6050LT1G mmbd6050lt1-d.pdf
MMBD6050LT1G
Hersteller: onsemi
Description: DIODE STANDARD 70V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.035 EUR
6000+0.029 EUR
9000+0.027 EUR
Mindestbestellmenge: 3000 Stücke
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MMBD6100LT1G mmbd6100lt1-d.pdf
MMBD6100LT1G
Hersteller: onsemi
Description: DIODE ARRAY GP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.032 EUR
9000+0.031 EUR
15000+0.029 EUR
21000+0.026 EUR
Mindestbestellmenge: 3000 Stücke
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MMBD7000LT1G mmbd7000lt1-d.pdf
MMBD7000LT1G
Hersteller: onsemi
Description: DIODE ARR GP 100V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.054 EUR
6000+0.048 EUR
Mindestbestellmenge: 3000 Stücke
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MMBD701LT1G mbd701-d.pdf
MMBD701LT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 70V 200MW SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Voltage - Peak Reverse (Max): 70V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Power Dissipation (Max): 200 mW
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.031 EUR
6000+0.03 EUR
Mindestbestellmenge: 3000 Stücke
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MMBD717LT1G mmbd717lt1-d.pdf
MMBD717LT1G
Hersteller: onsemi
Description: DIODE ARRAY SCHOTT 20V SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Anode
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.11 EUR
6000+0.099 EUR
9000+0.094 EUR
15000+0.087 EUR
21000+0.083 EUR
30000+0.08 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH