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MCR22-8RL1G MCR22-8RL1G onsemi MCR22-6-D.PDF Description: SCR 600V 1.5A TO-92 (TO-226)
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 110°C
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1.5 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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MDC3105DMT1G MDC3105DMT1G onsemi mdc3105-d.pdf Description: IC PWR DRIVER BIPOLAR 1:1 SC74
Output Configuration: Low Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: Relay, Solenoid Driver
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: Bipolar
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: SC-74
Ratio - Input:Output: 1:1
Current - Output (Max): 500mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 6V (Max)
Produkt ist nicht verfügbar
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MDC3105LT1G MDC3105LT1G onsemi mdc3105-d.pdf Description: IC PWR DRVR BIPOLAR 1:1 SOT23-3
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Bipolar
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
Supplier Device Package: SOT-23-3 (TO-236)
Ratio - Input:Output: 1:1
Current - Output (Max): 500mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 6V (Max)
Output Configuration: Low Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: Relay, Solenoid Driver
Interface: On/Off
Produkt ist nicht verfügbar
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MGP15N40CLG MGP15N40CLG onsemi MGP15N40CL-D.pdf Description: IGBT 440V 15A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 25A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: -/4µs
Test Condition: 300V, 6.5A, 1kOhm
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 150 W
Produkt ist nicht verfügbar
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MGSF1N02LT1G MGSF1N02LT1G onsemi mgsf1n02lt1-d.pdf Description: MOSFET N-CH 20V 750MA SOT23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
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6000+0.18 EUR
9000+0.17 EUR
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MGSF1N03LT1G MGSF1N03LT1G onsemi mgsf1n03lt1-d.pdf Description: MOSFET N-CH 30V 1.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.2A, 10V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 5 V
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MJ11015G MJ11015G onsemi mj11012-d.pdf description Description: TRANS PNP DARL 120V 30A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 W
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10+13.33 EUR
100+9.91 EUR
500+8.46 EUR
1000+8.4 EUR
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MJ11016G MJ11016G onsemi mj11012-d.pdf description Description: TRANS NPN DARL 120V 30A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 W
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100+7.25 EUR
500+6.1 EUR
1000+5.8 EUR
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MJ11032G MJ11032G onsemi mj11028-d.pdf Description: TRANS NPN DARL 120V 50A TO204
Packaging: Tray
Package / Case: TO-204AE
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 500mA, 50A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 25A, 5V
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 W
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MJ14002G MJ14002G onsemi mj14001-d.pdf Description: TRANS NPN 80V 60A TO204
Packaging: Tray
Package / Case: TO-204AE
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 12A, 60A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50A, 3V
Supplier Device Package: TO-204 (TO-3)
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 300 W
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MJ15011G MJ15011G onsemi mj15011-d.pdf Description: TRANS NPN 250V 10A TO204
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 10 A
Part Status: Obsolete
Supplier Device Package: TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 2V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 4A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Tray
Produkt ist nicht verfügbar
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MJ15015G MJ15015G onsemi 2n3055a-d.pdf Description: TRANS NPN 120V 15A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 7A, 15A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 4A, 2V
Frequency - Transition: 6MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 180 W
auf Bestellung 534 Stücke:
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2+14.47 EUR
10+9.81 EUR
100+7.16 EUR
500+6.03 EUR
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MJ15016G MJ15016G onsemi 2n3055a-d.pdf Description: TRANS PNP 120V 15A TO204
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 15 A
Part Status: Active
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 18MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 4A, 2V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 5V @ 7A, 15A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Tray
Power - Max: 115 W
Produkt ist nicht verfügbar
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MJ15023G MJ15023G onsemi mj15023-d.pdf description Description: TRANS PNP 200V 16A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 250 W
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MJ15024G MJ15024G onsemi mj15022-d.pdf description Description: TRANS NPN 250V 16A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 250 W
Produkt ist nicht verfügbar
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MJ15025G MJ15025G onsemi mj15023-d.pdf description Description: TRANS PNP 250V 16A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 250 W
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2+18.47 EUR
10+12.69 EUR
100+9.41 EUR
500+8.02 EUR
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MJ21193G MJ21193G onsemi mj21193-d.pdf Description: TRANS PNP 250V 16A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 250 W
auf Bestellung 1880 Stücke:
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2+18.93 EUR
10+13.02 EUR
100+9.67 EUR
500+8.25 EUR
1000+8.15 EUR
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MJ21194G MJ21194G onsemi mj21193-d.pdf Description: TRANS NPN 250V 16A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 250 W
auf Bestellung 106 Stücke:
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2+16.18 EUR
10+11.09 EUR
100+8.2 EUR
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MJ21195G MJ21195G onsemi mj21195-d.pdf Description: TRANS PNP 250V 16A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 250 W
auf Bestellung 625 Stücke:
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2+19.04 EUR
10+13.09 EUR
100+9.73 EUR
500+8.29 EUR
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MJ21196G MJ21196G onsemi mj21195-d.pdf Description: TRANS NPN 250V 16A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 250 W
auf Bestellung 106 Stücke:
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2+17.75 EUR
10+12.21 EUR
100+9.07 EUR
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MJ4502G MJ4502G onsemi mj4502-d.pdf Description: TRANS PNP 100V 30A TO204
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 7.5A, 2V
Current - Collector Cutoff (Max): 1mA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 750mA, 7.5A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Tray
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2+19.52 EUR
10+13.42 EUR
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MJD112-1G MJD112-1G onsemi mjd112-d.pdf Description: TRANS NPN DARL 100V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: IPAK
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 3845 Stücke:
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8+2.84 EUR
75+1.26 EUR
150+1.13 EUR
525+0.94 EUR
1050+0.86 EUR
2025+0.8 EUR
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MJD112T4G MJD112T4G onsemi mjd112-d.pdf Description: TRANS NPN DARL 100V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 20 W
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2500+0.48 EUR
5000+0.44 EUR
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MJD117T4G MJD117T4G onsemi mjd112-d.pdf Description: TRANS PNP DARL 100V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
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Lieferzeit 10-14 Tag (e)
9+2.39 EUR
14+1.5 EUR
100+0.99 EUR
500+0.77 EUR
1000+0.7 EUR
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MJD122T4G MJD122T4G onsemi mjd122-d.pdf Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
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5000+0.62 EUR
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MJD127T4G MJD127T4G onsemi mjd122-d.pdf Description: TRANS PNP DARL 100V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 2500 Stücke:
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2500+0.6 EUR
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MJD200T4G MJD200T4G onsemi mjd200-d.pdf Description: TRANS NPN 25V 5A DPAK
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: DPAK
Frequency - Transition: 65MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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MJD210T4G MJD210T4G onsemi mjd200-d.pdf Description: TRANS PNP 25V 5A DPAK
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: DPAK
Frequency - Transition: 65MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.43 EUR
5000+0.39 EUR
Mindestbestellmenge: 2500 Stücke
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MJD243T4G MJD243T4G onsemi mjd243-d.pdf Description: TRANS NPN 100V 4A DPAK
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.52 EUR
5000+0.49 EUR
Mindestbestellmenge: 2500 Stücke
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MJD253T4G MJD253T4G onsemi mjd243-d.pdf Description: TRANS PNP 100V 4A DPAK
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: DPAK
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.38 EUR
5000+0.35 EUR
Mindestbestellmenge: 2500 Stücke
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MJD2955T4G MJD2955T4G onsemi mjd2955-d.pdf Description: TRANS PNP 60V 10A DPAK
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: DPAK
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.51 EUR
5000+0.48 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MJD3055T4G MJD3055T4G onsemi mjd2955-d.pdf description Description: TRANS NPN 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
auf Bestellung 25600 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.57 EUR
5000+0.52 EUR
Mindestbestellmenge: 2500 Stücke
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MJD31CT4G MJD31CT4G onsemi mjd31-d.pdf Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.4 EUR
5000+0.37 EUR
Mindestbestellmenge: 2500 Stücke
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MJD32CT4G MJD32CT4G onsemi mjd31-d.pdf Description: TRANS PNP 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.45 EUR
Mindestbestellmenge: 2500 Stücke
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MJD340T4G MJD340T4G onsemi mjd340-d.pdf Description: TRANS NPN 300V 0.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.42 EUR
5000+0.38 EUR
Mindestbestellmenge: 2500 Stücke
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MJD350T4G MJD350T4G onsemi mjd340-d.pdf Description: TRANS PNP 300V 0.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
auf Bestellung 16467 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.31 EUR
15+1.45 EUR
100+0.95 EUR
500+0.74 EUR
1000+0.68 EUR
Mindestbestellmenge: 10 Stücke
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MJD41CT4G MJD41CT4G onsemi mjd41c-d.pdf Description: TRANS NPN 100V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.56 EUR
5000+0.52 EUR
Mindestbestellmenge: 2500 Stücke
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MJD42CT4G MJD42CT4G onsemi mjd41c-d.pdf Description: TRANS PNP 100V 6A DPAK
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.5 EUR
5000+0.46 EUR
Mindestbestellmenge: 2500 Stücke
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MJD44H11-1G MJD44H11-1G onsemi mjd44h11-d.pdf description Description: TRANS NPN 80V 8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: IPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11T4G MJD44H11T4G onsemi mjd44h11-d.pdf Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.51 EUR
5000+0.46 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MJD45H11-1G MJD45H11-1G onsemi mjd44h11-d.pdf description Description: TRANS PNP 80V 8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: IPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 207 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.06 EUR
75+1.36 EUR
150+1.21 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MJD45H11T4G MJD45H11T4G onsemi mjd44h11-d.pdf description Description: TRANS PNP 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 97500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.61 EUR
5000+0.56 EUR
Mindestbestellmenge: 2500 Stücke
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MJD47T4G MJD47T4G onsemi mjd47-d.pdf Description: TRANS NPN 250V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 1.56 W
auf Bestellung 11350 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.12 EUR
16+1.33 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.61 EUR
Mindestbestellmenge: 10 Stücke
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MJD50T4G MJD50T4G onsemi mjd47-d.pdf Description: TRANS NPN 400V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.56 W
auf Bestellung 11304 Stücke:
Lieferzeit 10-14 Tag (e)
11+2.03 EUR
17+1.27 EUR
100+0.83 EUR
500+0.64 EUR
1000+0.58 EUR
Mindestbestellmenge: 11 Stücke
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MJE13005G MJE13005G onsemi mje13005-d.pdf description Description: TRANS NPN 400V 4A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJE13007G MJE13007G onsemi mje13007-d.pdf description Description: TRANS NPN 400V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
auf Bestellung 2919 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.19 EUR
50+2.56 EUR
100+2.31 EUR
500+1.86 EUR
1000+1.71 EUR
2000+1.59 EUR
Mindestbestellmenge: 5 Stücke
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MJE13009G MJE13009G onsemi mje13009-d.pdf description Description: TRANS NPN 400V 12A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJE15028G MJE15028G onsemi mje15028-d.pdf Description: TRANS NPN 120V 8A TO-220
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-220
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 2827 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.99 EUR
50+2.45 EUR
100+2.2 EUR
500+1.77 EUR
1000+1.64 EUR
2000+1.52 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MJE15029G MJE15029G onsemi mje15028-d.pdf Description: TRANS PNP 120V 8A TO-220
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-220
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 4650 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.01 EUR
50+2.48 EUR
100+2.23 EUR
500+1.8 EUR
1000+1.65 EUR
2000+1.55 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MJE15030G MJE15030G onsemi mje15028-d.pdf Description: TRANS NPN 150V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 50 W
auf Bestellung 3354 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.38 EUR
50+2.67 EUR
100+2.4 EUR
500+1.94 EUR
1000+1.8 EUR
2000+1.67 EUR
Mindestbestellmenge: 4 Stücke
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MJE15031G MJE15031G onsemi mje15028-d.pdf Description: TRANS PNP 150V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 50 W
auf Bestellung 4227 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.71 EUR
50+2.83 EUR
100+2.56 EUR
500+2.06 EUR
1000+1.9 EUR
2000+1.77 EUR
Mindestbestellmenge: 4 Stücke
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MJE15032G MJE15032G onsemi mje15032-d.pdf Description: TRANS NPN 250V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
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MJE15033G MJE15033G onsemi mje15032-d.pdf Description: TRANS PNP 250V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
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MJE15034G MJE15034G onsemi mje15034-d.pdf Description: TRANS NPN 350V 4A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 2 W
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MJE15035G MJE15035G onsemi mje15034-d.pdf Description: TRANS PNP 350V 4A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 2 W
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100+2.21 EUR
500+1.78 EUR
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MJE170G MJE170G onsemi mje171-d.pdf Description: TRANS PNP 40V 3A TO-126
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-126
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
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15+1.45 EUR
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500+0.75 EUR
1000+0.68 EUR
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5000+0.56 EUR
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MJE171G MJE171G onsemi mje171-d.pdf Description: TRANS PNP 60V 3A TO-126
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-126
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
auf Bestellung 5490 Stücke:
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8+2.89 EUR
12+1.82 EUR
100+1.21 EUR
500+0.95 EUR
1000+0.86 EUR
2000+0.79 EUR
5000+0.71 EUR
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MJE18004G MJE18004G onsemi mje18004-d.pdf description Description: TRANS NPN 450V 5A TO-220
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Supplier Device Package: TO-220
Frequency - Transition: 13MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 300mA, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 500mA, 2.5A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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50+1.89 EUR
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MJE18008G MJE18008G onsemi mje18008-d.pdf Description: TRANS NPN 450V 8A TO-220
Power - Max: 125 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-220
Frequency - Transition: 13MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 700mV @ 900mA, 4.5A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.81 EUR
50+2.89 EUR
100+2.61 EUR
500+2.12 EUR
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MJE180G MJE180G onsemi mje171-d.pdf Description: TRANS NPN 40V 3A TO-126
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-126
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
auf Bestellung 372 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.14 EUR
11+1.99 EUR
100+1.32 EUR
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MCR22-8RL1G MCR22-6-D.PDF
MCR22-8RL1G
Hersteller: onsemi
Description: SCR 600V 1.5A TO-92 (TO-226)
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
SCR Type: Sensitive Gate
Operating Temperature: -40°C ~ 110°C
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.7 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 1.5 A
Voltage - Off State: 600 V
Produkt ist nicht verfügbar
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MDC3105DMT1G mdc3105-d.pdf
MDC3105DMT1G
Hersteller: onsemi
Description: IC PWR DRIVER BIPOLAR 1:1 SC74
Output Configuration: Low Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: Relay, Solenoid Driver
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: Bipolar
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: SC-74
Ratio - Input:Output: 1:1
Current - Output (Max): 500mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 6V (Max)
Produkt ist nicht verfügbar
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MDC3105LT1G mdc3105-d.pdf
MDC3105LT1G
Hersteller: onsemi
Description: IC PWR DRVR BIPOLAR 1:1 SOT23-3
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Bipolar
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Part Status: Last Time Buy
Supplier Device Package: SOT-23-3 (TO-236)
Ratio - Input:Output: 1:1
Current - Output (Max): 500mA
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 6V (Max)
Output Configuration: Low Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: Relay, Solenoid Driver
Interface: On/Off
Produkt ist nicht verfügbar
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MGP15N40CLG MGP15N40CL-D.pdf
MGP15N40CLG
Hersteller: onsemi
Description: IGBT 440V 15A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 2.9V @ 4V, 25A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: -/4µs
Test Condition: 300V, 6.5A, 1kOhm
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 150 W
Produkt ist nicht verfügbar
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MGSF1N02LT1G mgsf1n02lt1-d.pdf
MGSF1N02LT1G
Hersteller: onsemi
Description: MOSFET N-CH 20V 750MA SOT23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.19 EUR
6000+0.18 EUR
9000+0.17 EUR
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MGSF1N03LT1G mgsf1n03lt1-d.pdf
MGSF1N03LT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 1.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 1.2A, 10V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 5 V
auf Bestellung 6000 Stücke:
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AnzahlPrivatkunde
3000+0.32 EUR
6000+0.29 EUR
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MJ11015G description mj11012-d.pdf
MJ11015G
Hersteller: onsemi
Description: TRANS PNP DARL 120V 30A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 W
auf Bestellung 1830 Stücke:
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AnzahlPrivatkunde
2+19.37 EUR
10+13.33 EUR
100+9.91 EUR
500+8.46 EUR
1000+8.4 EUR
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MJ11016G description mj11012-d.pdf
MJ11016G
Hersteller: onsemi
Description: TRANS NPN DARL 120V 30A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 300mA, 30A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 20A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 200 W
auf Bestellung 4048 Stücke:
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2+14.61 EUR
10+9.91 EUR
100+7.25 EUR
500+6.1 EUR
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MJ11032G mj11028-d.pdf
MJ11032G
Hersteller: onsemi
Description: TRANS NPN DARL 120V 50A TO204
Packaging: Tray
Package / Case: TO-204AE
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 500mA, 50A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 25A, 5V
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 300 W
auf Bestellung 636 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+30.54 EUR
10+21.63 EUR
100+16.61 EUR
500+16.39 EUR
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MJ14002G mj14001-d.pdf
MJ14002G
Hersteller: onsemi
Description: TRANS NPN 80V 60A TO204
Packaging: Tray
Package / Case: TO-204AE
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 12A, 60A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 50A, 3V
Supplier Device Package: TO-204 (TO-3)
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 300 W
auf Bestellung 248 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+34.18 EUR
10+24.41 EUR
100+19.09 EUR
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MJ15011G mj15011-d.pdf
MJ15011G
Hersteller: onsemi
Description: TRANS NPN 250V 10A TO204
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 10 A
Part Status: Obsolete
Supplier Device Package: TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 2V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 4A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Tray
Produkt ist nicht verfügbar
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MJ15015G 2n3055a-d.pdf
MJ15015G
Hersteller: onsemi
Description: TRANS NPN 120V 15A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 7A, 15A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 4A, 2V
Frequency - Transition: 6MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 180 W
auf Bestellung 534 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.47 EUR
10+9.81 EUR
100+7.16 EUR
500+6.03 EUR
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MJ15016G 2n3055a-d.pdf
MJ15016G
Hersteller: onsemi
Description: TRANS PNP 120V 15A TO204
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 15 A
Part Status: Active
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 18MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 4A, 2V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 5V @ 7A, 15A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Tray
Power - Max: 115 W
Produkt ist nicht verfügbar
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MJ15023G description mj15023-d.pdf
MJ15023G
Hersteller: onsemi
Description: TRANS PNP 200V 16A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 250 W
auf Bestellung 59 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.61 EUR
10+12.09 EUR
Mindestbestellmenge: 2 Stücke
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MJ15024G description mj15022-d.pdf
MJ15024G
Hersteller: onsemi
Description: TRANS NPN 250V 16A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 250 W
Produkt ist nicht verfügbar
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MJ15025G description mj15023-d.pdf
MJ15025G
Hersteller: onsemi
Description: TRANS PNP 250V 16A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 250 W
auf Bestellung 845 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.47 EUR
10+12.69 EUR
100+9.41 EUR
500+8.02 EUR
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MJ21193G mj21193-d.pdf
MJ21193G
Hersteller: onsemi
Description: TRANS PNP 250V 16A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 250 W
auf Bestellung 1880 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.93 EUR
10+13.02 EUR
100+9.67 EUR
500+8.25 EUR
1000+8.15 EUR
Mindestbestellmenge: 2 Stücke
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MJ21194G mj21193-d.pdf
MJ21194G
Hersteller: onsemi
Description: TRANS NPN 250V 16A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 250 W
auf Bestellung 106 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.18 EUR
10+11.09 EUR
100+8.2 EUR
Mindestbestellmenge: 2 Stücke
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MJ21195G mj21195-d.pdf
MJ21195G
Hersteller: onsemi
Description: TRANS PNP 250V 16A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 250 W
auf Bestellung 625 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.04 EUR
10+13.09 EUR
100+9.73 EUR
500+8.29 EUR
Mindestbestellmenge: 2 Stücke
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MJ21196G mj21195-d.pdf
MJ21196G
Hersteller: onsemi
Description: TRANS NPN 250V 16A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 3.2A, 16A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 8A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-204 (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 250 W
auf Bestellung 106 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.75 EUR
10+12.21 EUR
100+9.07 EUR
Mindestbestellmenge: 2 Stücke
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MJ4502G mj4502-d.pdf
MJ4502G
Hersteller: onsemi
Description: TRANS PNP 100V 30A TO204
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 30 A
Part Status: Active
Supplier Device Package: TO-204 (TO-3)
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 7.5A, 2V
Current - Collector Cutoff (Max): 1mA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 750mA, 7.5A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Tray
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.52 EUR
10+13.42 EUR
Mindestbestellmenge: 2 Stücke
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MJD112-1G mjd112-d.pdf
MJD112-1G
Hersteller: onsemi
Description: TRANS NPN DARL 100V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: IPAK
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 3845 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.84 EUR
75+1.26 EUR
150+1.13 EUR
525+0.94 EUR
1050+0.86 EUR
2025+0.8 EUR
Mindestbestellmenge: 8 Stücke
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MJD112T4G mjd112-d.pdf
MJD112T4G
Hersteller: onsemi
Description: TRANS NPN DARL 100V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 20 W
auf Bestellung 280000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.48 EUR
5000+0.44 EUR
Mindestbestellmenge: 2500 Stücke
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MJD117T4G mjd112-d.pdf
MJD117T4G
Hersteller: onsemi
Description: TRANS PNP DARL 100V 2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Current - Collector Cutoff (Max): 20µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V
Frequency - Transition: 25MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.39 EUR
14+1.5 EUR
100+0.99 EUR
500+0.77 EUR
1000+0.7 EUR
Mindestbestellmenge: 9 Stücke
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MJD122T4G mjd122-d.pdf
MJD122T4G
Hersteller: onsemi
Description: TRANS NPN DARL 100V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 32500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.67 EUR
5000+0.62 EUR
Mindestbestellmenge: 2500 Stücke
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MJD127T4G mjd122-d.pdf
MJD127T4G
Hersteller: onsemi
Description: TRANS PNP DARL 100V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.6 EUR
Mindestbestellmenge: 2500 Stücke
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MJD200T4G mjd200-d.pdf
MJD200T4G
Hersteller: onsemi
Description: TRANS NPN 25V 5A DPAK
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: DPAK
Frequency - Transition: 65MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MJD210T4G mjd200-d.pdf
MJD210T4G
Hersteller: onsemi
Description: TRANS PNP 25V 5A DPAK
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 5 A
Supplier Device Package: DPAK
Frequency - Transition: 65MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.43 EUR
5000+0.39 EUR
Mindestbestellmenge: 2500 Stücke
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MJD243T4G mjd243-d.pdf
MJD243T4G
Hersteller: onsemi
Description: TRANS NPN 100V 4A DPAK
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.52 EUR
5000+0.49 EUR
Mindestbestellmenge: 2500 Stücke
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MJD253T4G mjd243-d.pdf
MJD253T4G
Hersteller: onsemi
Description: TRANS PNP 100V 4A DPAK
Power - Max: 1.4 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: DPAK
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.38 EUR
5000+0.35 EUR
Mindestbestellmenge: 2500 Stücke
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MJD2955T4G mjd2955-d.pdf
MJD2955T4G
Hersteller: onsemi
Description: TRANS PNP 60V 10A DPAK
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: DPAK
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.51 EUR
5000+0.48 EUR
Mindestbestellmenge: 2500 Stücke
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MJD3055T4G description mjd2955-d.pdf
MJD3055T4G
Hersteller: onsemi
Description: TRANS NPN 60V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
auf Bestellung 25600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.57 EUR
5000+0.52 EUR
Mindestbestellmenge: 2500 Stücke
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MJD31CT4G mjd31-d.pdf
MJD31CT4G
Hersteller: onsemi
Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.4 EUR
5000+0.37 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MJD32CT4G mjd31-d.pdf
MJD32CT4G
Hersteller: onsemi
Description: TRANS PNP 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.45 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MJD340T4G mjd340-d.pdf
MJD340T4G
Hersteller: onsemi
Description: TRANS NPN 300V 0.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.42 EUR
5000+0.38 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MJD350T4G mjd340-d.pdf
MJD350T4G
Hersteller: onsemi
Description: TRANS PNP 300V 0.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
auf Bestellung 16467 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.31 EUR
15+1.45 EUR
100+0.95 EUR
500+0.74 EUR
1000+0.68 EUR
Mindestbestellmenge: 10 Stücke
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MJD41CT4G mjd41c-d.pdf
MJD41CT4G
Hersteller: onsemi
Description: TRANS NPN 100V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.56 EUR
5000+0.52 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MJD42CT4G mjd41c-d.pdf
MJD42CT4G
Hersteller: onsemi
Description: TRANS PNP 100V 6A DPAK
Power - Max: 1.75 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: DPAK
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.5 EUR
5000+0.46 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11-1G description mjd44h11-d.pdf
MJD44H11-1G
Hersteller: onsemi
Description: TRANS NPN 80V 8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: IPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11T4G mjd44h11-d.pdf
MJD44H11T4G
Hersteller: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.51 EUR
5000+0.46 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
MJD45H11-1G description mjd44h11-d.pdf
MJD45H11-1G
Hersteller: onsemi
Description: TRANS PNP 80V 8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: IPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 207 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.06 EUR
75+1.36 EUR
150+1.21 EUR
Mindestbestellmenge: 7 Stücke
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MJD45H11T4G description mjd44h11-d.pdf
MJD45H11T4G
Hersteller: onsemi
Description: TRANS PNP 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 97500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.61 EUR
5000+0.56 EUR
Mindestbestellmenge: 2500 Stücke
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MJD47T4G mjd47-d.pdf
MJD47T4G
Hersteller: onsemi
Description: TRANS NPN 250V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 1.56 W
auf Bestellung 11350 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.12 EUR
16+1.33 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.61 EUR
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MJD50T4G mjd47-d.pdf
MJD50T4G
Hersteller: onsemi
Description: TRANS NPN 400V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.56 W
auf Bestellung 11304 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.03 EUR
17+1.27 EUR
100+0.83 EUR
500+0.64 EUR
1000+0.58 EUR
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MJE13005G description mje13005-d.pdf
MJE13005G
Hersteller: onsemi
Description: TRANS NPN 400V 4A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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MJE13007G description mje13007-d.pdf
MJE13007G
Hersteller: onsemi
Description: TRANS NPN 400V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2A, 8A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5A, 5V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 80 W
auf Bestellung 2919 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.19 EUR
50+2.56 EUR
100+2.31 EUR
500+1.86 EUR
1000+1.71 EUR
2000+1.59 EUR
Mindestbestellmenge: 5 Stücke
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MJE13009G description mje13009-d.pdf
MJE13009G
Hersteller: onsemi
Description: TRANS NPN 400V 12A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 3A, 12A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5A, 5V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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MJE15028G mje15028-d.pdf
MJE15028G
Hersteller: onsemi
Description: TRANS NPN 120V 8A TO-220
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-220
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 2827 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.99 EUR
50+2.45 EUR
100+2.2 EUR
500+1.77 EUR
1000+1.64 EUR
2000+1.52 EUR
Mindestbestellmenge: 5 Stücke
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MJE15029G mje15028-d.pdf
MJE15029G
Hersteller: onsemi
Description: TRANS PNP 120V 8A TO-220
Power - Max: 50 W
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 8 A
Part Status: Active
Supplier Device Package: TO-220
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 4650 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.01 EUR
50+2.48 EUR
100+2.23 EUR
500+1.8 EUR
1000+1.65 EUR
2000+1.55 EUR
Mindestbestellmenge: 5 Stücke
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MJE15030G mje15028-d.pdf
MJE15030G
Hersteller: onsemi
Description: TRANS NPN 150V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 50 W
auf Bestellung 3354 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.38 EUR
50+2.67 EUR
100+2.4 EUR
500+1.94 EUR
1000+1.8 EUR
2000+1.67 EUR
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MJE15031G mje15028-d.pdf
MJE15031G
Hersteller: onsemi
Description: TRANS PNP 150V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 2V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 50 W
auf Bestellung 4227 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.71 EUR
50+2.83 EUR
100+2.56 EUR
500+2.06 EUR
1000+1.9 EUR
2000+1.77 EUR
Mindestbestellmenge: 4 Stücke
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MJE15032G mje15032-d.pdf
MJE15032G
Hersteller: onsemi
Description: TRANS NPN 250V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
auf Bestellung 1715 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.7 EUR
50+2.83 EUR
100+2.55 EUR
500+2.06 EUR
1000+1.9 EUR
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MJE15033G mje15032-d.pdf
MJE15033G
Hersteller: onsemi
Description: TRANS PNP 250V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 50 W
auf Bestellung 3757 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.81 EUR
50+2.89 EUR
100+2.61 EUR
500+2.11 EUR
1000+1.95 EUR
2000+1.81 EUR
Mindestbestellmenge: 4 Stücke
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MJE15034G mje15034-d.pdf
MJE15034G
Hersteller: onsemi
Description: TRANS NPN 350V 4A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 2 W
auf Bestellung 3811 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.82 EUR
50+2.37 EUR
100+2.13 EUR
500+1.71 EUR
1000+1.58 EUR
2000+1.46 EUR
Mindestbestellmenge: 5 Stücke
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MJE15035G mje15034-d.pdf
MJE15035G
Hersteller: onsemi
Description: TRANS PNP 350V 4A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 2A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 2 W
auf Bestellung 1113 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.01 EUR
50+2.46 EUR
100+2.21 EUR
500+1.78 EUR
1000+1.65 EUR
Mindestbestellmenge: 5 Stücke
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MJE170G mje171-d.pdf
MJE170G
Hersteller: onsemi
Description: TRANS PNP 40V 3A TO-126
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-126
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
auf Bestellung 9122 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10+2.31 EUR
15+1.45 EUR
100+0.95 EUR
500+0.75 EUR
1000+0.68 EUR
2000+0.62 EUR
5000+0.56 EUR
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MJE171G mje171-d.pdf
MJE171G
Hersteller: onsemi
Description: TRANS PNP 60V 3A TO-126
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-126
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
auf Bestellung 5490 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.89 EUR
12+1.82 EUR
100+1.21 EUR
500+0.95 EUR
1000+0.86 EUR
2000+0.79 EUR
5000+0.71 EUR
Mindestbestellmenge: 8 Stücke
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MJE18004G description mje18004-d.pdf
MJE18004G
Hersteller: onsemi
Description: TRANS NPN 450V 5A TO-220
Power - Max: 75 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 5 A
Part Status: Active
Supplier Device Package: TO-220
Frequency - Transition: 13MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 300mA, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 500mA, 2.5A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 743 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.89 EUR
50+1.89 EUR
100+1.69 EUR
500+1.34 EUR
Mindestbestellmenge: 6 Stücke
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MJE18008G mje18008-d.pdf
MJE18008G
Hersteller: onsemi
Description: TRANS NPN 450V 8A TO-220
Power - Max: 125 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-220
Frequency - Transition: 13MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 1A, 5V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 700mV @ 900mA, 4.5A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.81 EUR
50+2.89 EUR
100+2.61 EUR
500+2.12 EUR
1000+1.96 EUR
2000+1.82 EUR
Mindestbestellmenge: 4 Stücke
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MJE180G mje171-d.pdf
MJE180G
Hersteller: onsemi
Description: TRANS NPN 40V 3A TO-126
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.7V @ 600mA, 3A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 3 A
Supplier Device Package: TO-126
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 100mA, 1V
auf Bestellung 372 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.14 EUR
11+1.99 EUR
100+1.32 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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