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MJD3055 MJD3055 onsemi mjd2955-d.pdf Description: TRANS NPN 60V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
MJD3055G MJD3055G onsemi mjd2955-d.pdf Description: TRANS NPN 60V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
MJD31C1 MJD31C1 onsemi mjd31-d.pdf Description: TRANS NPN 100V 3A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: IPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Produkt ist nicht verfügbar
MJD31C1G MJD31C1G onsemi mjd31-d.pdf Description: TRANS NPN 100V 3A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: IPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Produkt ist nicht verfügbar
MJD31CG MJD31CG onsemi mjd31-d.pdf Description: TRANS NPN 100V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
auf Bestellung 1369 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.25 EUR
13+ 1.42 EUR
100+ 0.95 EUR
500+ 0.74 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 8
MJD31CRL MJD31CRL onsemi mjd31-d.pdf Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Produkt ist nicht verfügbar
MJD31CRLG MJD31CRLG onsemi mjd31-d.pdf Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
auf Bestellung 28800 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.61 EUR
3600+ 0.57 EUR
5400+ 0.54 EUR
9000+ 0.52 EUR
Mindestbestellmenge: 1800
MJD31T4G MJD31T4G onsemi mjd31-d.pdf Description: TRANS NPN 40V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.56 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.58 EUR
Mindestbestellmenge: 2500
MJD32CG MJD32CG onsemi mjd31-d.pdf Description: TRANS PNP 100V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
auf Bestellung 19899 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.23 EUR
75+ 1.02 EUR
150+ 0.74 EUR
525+ 0.62 EUR
1050+ 0.52 EUR
2025+ 0.47 EUR
5025+ 0.44 EUR
10050+ 0.41 EUR
Mindestbestellmenge: 15
MJD32CRL MJD32CRL onsemi mjd31-d.pdf Description: TRANS PNP 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Produkt ist nicht verfügbar
MJD32CRLG MJD32CRLG onsemi mjd31-d.pdf Description: TRANS PNP 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.62 EUR
Mindestbestellmenge: 1800
MJD32T4G MJD32T4G onsemi mjd31-d.pdf Description: TRANS PNP 40V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.56 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.56 EUR
Mindestbestellmenge: 2500
MJD340 MJD340 onsemi mjd340-d.pdf Description: TRANS NPN 300V 0.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
Produkt ist nicht verfügbar
MJD340G MJD340G onsemi mjd340-d.pdf Description: TRANS NPN 300V 0.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
auf Bestellung 19252 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.76 EUR
16+ 1.1 EUR
100+ 0.72 EUR
500+ 0.56 EUR
1000+ 0.51 EUR
2000+ 0.46 EUR
5000+ 0.41 EUR
10000+ 0.38 EUR
Mindestbestellmenge: 10
MJD340RLG MJD340RLG onsemi mjd340-d.pdf Description: TRANS NPN 300V 0.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.49 EUR
3600+ 0.44 EUR
5400+ 0.42 EUR
9000+ 0.39 EUR
Mindestbestellmenge: 1800
MJD350G MJD350G onsemi mjd340-d.pdf Description: TRANS PNP 300V 0.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
Produkt ist nicht verfügbar
MJD41CRLG MJD41CRLG onsemi mjd41c-d.pdf Description: TRANS NPN 100V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.5 EUR
Mindestbestellmenge: 1800
MJD42C MJD42C onsemi mjd41c-d.pdf description Description: TRANS PNP 100V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
MJD42C1 MJD42C1 onsemi mjd41c-d.pdf Description: TRANS PNP 100V 6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: IPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
MJD42C1G MJD42C1G onsemi mjd41c-d.pdf Description: TRANS PNP 100V 6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: IPAK
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 429 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.53 EUR
75+ 1.27 EUR
150+ 0.92 EUR
Mindestbestellmenge: 12
MJD42CG MJD42CG onsemi mjd41c-d.pdf Description: TRANS PNP 100V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 508 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.48 EUR
75+ 1.18 EUR
150+ 0.94 EUR
Mindestbestellmenge: 12
MJD42CRL MJD42CRL onsemi mjd41c-d.pdf Description: TRANS PNP 100V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
MJD42CRLG MJD42CRLG onsemi mjd41c-d.pdf Description: TRANS PNP 100V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.75 EUR
Mindestbestellmenge: 1800
MJD44H11G MJD44H11G onsemi mjd44h11-d.pdf description Description: TRANS NPN 80V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 5285 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
11+ 1.74 EUR
100+ 1.17 EUR
500+ 0.92 EUR
1000+ 0.84 EUR
2000+ 0.77 EUR
5000+ 0.7 EUR
Mindestbestellmenge: 7
MJD44H11RLG MJD44H11RLG onsemi mjd44h11-d.pdf Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.78 EUR
Mindestbestellmenge: 1800
MJD44H11T5 MJD44H11T5 onsemi mjd44h11-d.pdf Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
MJD44H11T5G MJD44H11T5G onsemi mjd44h11-d.pdf Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
MJD45H11G MJD45H11G onsemi mjd44h11-d.pdf description Description: TRANS PNP 80V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 14246 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.62 EUR
75+ 1.16 EUR
150+ 1.04 EUR
525+ 0.87 EUR
1050+ 0.79 EUR
2025+ 0.73 EUR
5025+ 0.66 EUR
10050+ 0.63 EUR
Mindestbestellmenge: 7
MJD45H11RLG MJD45H11RLG onsemi mjd44h11-d.pdf Description: TRANS PNP 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 10800 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.71 EUR
3600+ 0.66 EUR
5400+ 0.63 EUR
9000+ 0.6 EUR
Mindestbestellmenge: 1800
MJD47 MJD47 onsemi mjd47-d.pdf Description: TRANS NPN 250V 1A DPAK
Packaging: Tube
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 1.56 W
Produkt ist nicht verfügbar
MJD47G MJD47G onsemi mjd47-d.pdf Description: TRANS NPN 250V 1A DPAK
Packaging: Tube
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 1.56 W
auf Bestellung 19498 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.5 EUR
14+ 1.29 EUR
100+ 0.9 EUR
500+ 0.75 EUR
1000+ 0.64 EUR
2000+ 0.57 EUR
5000+ 0.54 EUR
10000+ 0.5 EUR
Mindestbestellmenge: 12
MJD50 MJD50 onsemi mjd47-d.pdf Description: TRANS NPN 400V 1A DPAK
Produkt ist nicht verfügbar
MJD50G MJD50G onsemi mjd47-d.pdf Description: TRANS NPN 400V 1A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.56 W
auf Bestellung 1313 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.5 EUR
14+ 1.29 EUR
100+ 0.89 EUR
500+ 0.75 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 12
MJD5731T4G MJD5731T4G onsemi mjd5731-d.pdf Description: TRANS PNP 350V 1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 1.56 W
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.42 EUR
5000+ 0.4 EUR
12500+ 0.37 EUR
Mindestbestellmenge: 2500
MJD6039T4 MJD6039T4 onsemi mjd6039-d.pdf Description: TRANS NPN DARL 80V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 2A, 4V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
MJD6039T4G MJD6039T4G onsemi mjd6039-d.pdf Description: TRANS NPN DARL 80V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 2A, 4V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
MJE13003G MJE13003G onsemi mje13003-d.pdf description Description: TRANS NPN 400V 1.5A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 500mA, 2V
Frequency - Transition: 10MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.4 W
Produkt ist nicht verfügbar
MJE18004D2 MJE18004D2 onsemi mje18004d2-d.pdf Description: TRANS NPN 450V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 400mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 75 W
Produkt ist nicht verfügbar
MJE18004D2G MJE18004D2G onsemi mje18004d2-d.pdf Description: TRANS NPN 450V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 400mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 75 W
Produkt ist nicht verfügbar
MJE18006 MJE18006 onsemi mje18006-d.pdf Description: TRANS NPN 450V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 3A, 1V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 100 W
Produkt ist nicht verfügbar
MJE18006G MJE18006G onsemi mje18006-d.pdf Description: TRANS NPN 450V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 3A, 1V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 100 W
Produkt ist nicht verfügbar
MJE210T MJE210T onsemi mje210-d.pdf Description: TRANS PNP 40V 5A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 15 W
Produkt ist nicht verfügbar
MJE210TG MJE210TG onsemi mje210-d.pdf Description: TRANS PNP 40V 5A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 15 W
Produkt ist nicht verfügbar
MJE271 MJE271 onsemi mje270-d.pdf Description: TRANS PNP DARL 100V 2A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V
Frequency - Transition: 6MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
MJE271G MJE271G onsemi mje270-d.pdf Description: TRANS PNP DARL 100V 2A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V
Frequency - Transition: 6MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
MJE5731 MJE5731 onsemi mje5730-d.pdf Description: TRANS PNP 350V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 40 W
Produkt ist nicht verfügbar
MJE5731G MJE5731G onsemi mje5730-d.pdf Description: TRANS PNP 350V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 40 W
auf Bestellung 319 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.94 EUR
50+ 1.57 EUR
100+ 1.24 EUR
Mindestbestellmenge: 10
MJE703 MJE703 onsemi mje700-d.pdf Description: TRANS PNP DARL 80V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Produkt ist nicht verfügbar
MJE703G MJE703G onsemi mje700-d.pdf Description: TRANS PNP DARL 80V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Produkt ist nicht verfügbar
MJF2955G MJF2955G onsemi mjf3055-d.pdf Description: TRANS PNP 90V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.3A, 10A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 2 W
auf Bestellung 703 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.81 EUR
50+ 1.46 EUR
100+ 1.2 EUR
500+ 1.08 EUR
Mindestbestellmenge: 10
MJF31CG MJF31CG onsemi mjf31c-d.pdf Description: TRANS NPN 100V 3A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220FP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
auf Bestellung 3979 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.02 EUR
50+ 1.64 EUR
100+ 1.3 EUR
500+ 1.1 EUR
1000+ 0.9 EUR
2000+ 0.84 EUR
Mindestbestellmenge: 9
MJF32C MJF32C onsemi mjf31c-d.pdf Description: TRANS PNP 100V 3A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
MJF32CG MJF32CG onsemi mjf31c-d.pdf Description: TRANS PNP 100V 3A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
auf Bestellung 7002 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.8 EUR
10+ 1.78 EUR
100+ 1.19 EUR
500+ 0.94 EUR
1000+ 0.86 EUR
2000+ 0.79 EUR
5000+ 0.72 EUR
Mindestbestellmenge: 7
MJF45H11 MJF45H11 onsemi mjf44h11-d.pdf Description: TRANS PNP 80V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Produkt ist nicht verfügbar
MJF45H11G MJF45H11G onsemi mjf44h11-d.pdf Description: TRANS PNP 80V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-220FP
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 216 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.62 EUR
50+ 2.11 EUR
100+ 1.67 EUR
Mindestbestellmenge: 7
MJL0281A MJL0281A onsemi mjl0281a-d.pdf Description: TRANS NPN 260V 15A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-264
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 260 V
Power - Max: 180 W
Produkt ist nicht verfügbar
MJW0281AG MJW0281AG onsemi MJW0281A,%200302A.pdf Description: TRANS NPN 260V 15A TO-247
Produkt ist nicht verfügbar
MJW0302AG MJW0302AG onsemi MJW0281A, 0302A.pdf Description: TRANS PNP 260V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 260 V
Power - Max: 150 W
Produkt ist nicht verfügbar
MJW18020G MJW18020G onsemi mjw18020-d.pdf Description: TRANS NPN 450V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4A, 20A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 3A, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 250 W
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.11 EUR
Mindestbestellmenge: 2
MJW21191 MJW21191 onsemi mjw21192-d.pdf Description: TRANS PNP 150V 8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 1.6A, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 125 W
Produkt ist nicht verfügbar
MJD3055 mjd2955-d.pdf
MJD3055
Hersteller: onsemi
Description: TRANS NPN 60V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
MJD3055G mjd2955-d.pdf
MJD3055G
Hersteller: onsemi
Description: TRANS NPN 60V 10A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 8V @ 3.3A, 10A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
MJD31C1 mjd31-d.pdf
MJD31C1
Hersteller: onsemi
Description: TRANS NPN 100V 3A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: IPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Produkt ist nicht verfügbar
MJD31C1G mjd31-d.pdf
MJD31C1G
Hersteller: onsemi
Description: TRANS NPN 100V 3A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: IPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Produkt ist nicht verfügbar
MJD31CG mjd31-d.pdf
MJD31CG
Hersteller: onsemi
Description: TRANS NPN 100V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
auf Bestellung 1369 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.25 EUR
13+ 1.42 EUR
100+ 0.95 EUR
500+ 0.74 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 8
MJD31CRL mjd31-d.pdf
MJD31CRL
Hersteller: onsemi
Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Produkt ist nicht verfügbar
MJD31CRLG mjd31-d.pdf
MJD31CRLG
Hersteller: onsemi
Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
auf Bestellung 28800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1800+0.61 EUR
3600+ 0.57 EUR
5400+ 0.54 EUR
9000+ 0.52 EUR
Mindestbestellmenge: 1800
MJD31T4G mjd31-d.pdf
MJD31T4G
Hersteller: onsemi
Description: TRANS NPN 40V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.56 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.58 EUR
Mindestbestellmenge: 2500
MJD32CG mjd31-d.pdf
MJD32CG
Hersteller: onsemi
Description: TRANS PNP 100V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
auf Bestellung 19899 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
15+1.23 EUR
75+ 1.02 EUR
150+ 0.74 EUR
525+ 0.62 EUR
1050+ 0.52 EUR
2025+ 0.47 EUR
5025+ 0.44 EUR
10050+ 0.41 EUR
Mindestbestellmenge: 15
MJD32CRL mjd31-d.pdf
MJD32CRL
Hersteller: onsemi
Description: TRANS PNP 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
Produkt ist nicht verfügbar
MJD32CRLG mjd31-d.pdf
MJD32CRLG
Hersteller: onsemi
Description: TRANS PNP 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.56 W
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1800+0.62 EUR
Mindestbestellmenge: 1800
MJD32T4G mjd31-d.pdf
MJD32T4G
Hersteller: onsemi
Description: TRANS PNP 40V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.56 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.56 EUR
Mindestbestellmenge: 2500
MJD340 mjd340-d.pdf
MJD340
Hersteller: onsemi
Description: TRANS NPN 300V 0.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
Produkt ist nicht verfügbar
MJD340G mjd340-d.pdf
MJD340G
Hersteller: onsemi
Description: TRANS NPN 300V 0.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
auf Bestellung 19252 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.76 EUR
16+ 1.1 EUR
100+ 0.72 EUR
500+ 0.56 EUR
1000+ 0.51 EUR
2000+ 0.46 EUR
5000+ 0.41 EUR
10000+ 0.38 EUR
Mindestbestellmenge: 10
MJD340RLG mjd340-d.pdf
MJD340RLG
Hersteller: onsemi
Description: TRANS NPN 300V 0.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1800+0.49 EUR
3600+ 0.44 EUR
5400+ 0.42 EUR
9000+ 0.39 EUR
Mindestbestellmenge: 1800
MJD350G mjd340-d.pdf
MJD350G
Hersteller: onsemi
Description: TRANS PNP 300V 0.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
Produkt ist nicht verfügbar
MJD41CRLG mjd41c-d.pdf
MJD41CRLG
Hersteller: onsemi
Description: TRANS NPN 100V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1800+0.5 EUR
Mindestbestellmenge: 1800
MJD42C description mjd41c-d.pdf
MJD42C
Hersteller: onsemi
Description: TRANS PNP 100V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
MJD42C1 mjd41c-d.pdf
MJD42C1
Hersteller: onsemi
Description: TRANS PNP 100V 6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: IPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
MJD42C1G mjd41c-d.pdf
MJD42C1G
Hersteller: onsemi
Description: TRANS PNP 100V 6A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: IPAK
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 429 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.53 EUR
75+ 1.27 EUR
150+ 0.92 EUR
Mindestbestellmenge: 12
MJD42CG mjd41c-d.pdf
MJD42CG
Hersteller: onsemi
Description: TRANS PNP 100V 6A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 508 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.48 EUR
75+ 1.18 EUR
150+ 0.94 EUR
Mindestbestellmenge: 12
MJD42CRL mjd41c-d.pdf
MJD42CRL
Hersteller: onsemi
Description: TRANS PNP 100V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
MJD42CRLG mjd41c-d.pdf
MJD42CRLG
Hersteller: onsemi
Description: TRANS PNP 100V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.75 W
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1800+0.75 EUR
Mindestbestellmenge: 1800
MJD44H11G description mjd44h11-d.pdf
MJD44H11G
Hersteller: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 5285 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.73 EUR
11+ 1.74 EUR
100+ 1.17 EUR
500+ 0.92 EUR
1000+ 0.84 EUR
2000+ 0.77 EUR
5000+ 0.7 EUR
Mindestbestellmenge: 7
MJD44H11RLG mjd44h11-d.pdf
MJD44H11RLG
Hersteller: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1800+0.78 EUR
Mindestbestellmenge: 1800
MJD44H11T5 mjd44h11-d.pdf
MJD44H11T5
Hersteller: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
MJD44H11T5G mjd44h11-d.pdf
MJD44H11T5G
Hersteller: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
MJD45H11G description mjd44h11-d.pdf
MJD45H11G
Hersteller: onsemi
Description: TRANS PNP 80V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 14246 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.62 EUR
75+ 1.16 EUR
150+ 1.04 EUR
525+ 0.87 EUR
1050+ 0.79 EUR
2025+ 0.73 EUR
5025+ 0.66 EUR
10050+ 0.63 EUR
Mindestbestellmenge: 7
MJD45H11RLG mjd44h11-d.pdf
MJD45H11RLG
Hersteller: onsemi
Description: TRANS PNP 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 10800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1800+0.71 EUR
3600+ 0.66 EUR
5400+ 0.63 EUR
9000+ 0.6 EUR
Mindestbestellmenge: 1800
MJD47 mjd47-d.pdf
MJD47
Hersteller: onsemi
Description: TRANS NPN 250V 1A DPAK
Packaging: Tube
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 1.56 W
Produkt ist nicht verfügbar
MJD47G mjd47-d.pdf
MJD47G
Hersteller: onsemi
Description: TRANS NPN 250V 1A DPAK
Packaging: Tube
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 1.56 W
auf Bestellung 19498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.5 EUR
14+ 1.29 EUR
100+ 0.9 EUR
500+ 0.75 EUR
1000+ 0.64 EUR
2000+ 0.57 EUR
5000+ 0.54 EUR
10000+ 0.5 EUR
Mindestbestellmenge: 12
MJD50 mjd47-d.pdf
MJD50
Hersteller: onsemi
Description: TRANS NPN 400V 1A DPAK
Produkt ist nicht verfügbar
MJD50G mjd47-d.pdf
MJD50G
Hersteller: onsemi
Description: TRANS NPN 400V 1A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.56 W
auf Bestellung 1313 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.5 EUR
14+ 1.29 EUR
100+ 0.89 EUR
500+ 0.75 EUR
1000+ 0.63 EUR
Mindestbestellmenge: 12
MJD5731T4G mjd5731-d.pdf
MJD5731T4G
Hersteller: onsemi
Description: TRANS PNP 350V 1A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 1.56 W
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.42 EUR
5000+ 0.4 EUR
12500+ 0.37 EUR
Mindestbestellmenge: 2500
MJD6039T4 mjd6039-d.pdf
MJD6039T4
Hersteller: onsemi
Description: TRANS NPN DARL 80V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 2A, 4V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
MJD6039T4G mjd6039-d.pdf
MJD6039T4G
Hersteller: onsemi
Description: TRANS NPN DARL 80V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 2A, 4V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Produkt ist nicht verfügbar
MJE13003G description mje13003-d.pdf
MJE13003G
Hersteller: onsemi
Description: TRANS NPN 400V 1.5A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 500mA, 1.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 500mA, 2V
Frequency - Transition: 10MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.4 W
Produkt ist nicht verfügbar
MJE18004D2 mje18004d2-d.pdf
MJE18004D2
Hersteller: onsemi
Description: TRANS NPN 450V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 400mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 75 W
Produkt ist nicht verfügbar
MJE18004D2G mje18004d2-d.pdf
MJE18004D2G
Hersteller: onsemi
Description: TRANS NPN 450V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 400mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 2A, 1V
Frequency - Transition: 13MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 75 W
Produkt ist nicht verfügbar
MJE18006 mje18006-d.pdf
MJE18006
Hersteller: onsemi
Description: TRANS NPN 450V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 3A, 1V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 100 W
Produkt ist nicht verfügbar
MJE18006G mje18006-d.pdf
MJE18006G
Hersteller: onsemi
Description: TRANS NPN 450V 6A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 600mA, 3A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 3A, 1V
Frequency - Transition: 14MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 100 W
Produkt ist nicht verfügbar
MJE210T mje210-d.pdf
MJE210T
Hersteller: onsemi
Description: TRANS PNP 40V 5A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 15 W
Produkt ist nicht verfügbar
MJE210TG mje210-d.pdf
MJE210TG
Hersteller: onsemi
Description: TRANS PNP 40V 5A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1A, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 45 @ 2A, 1V
Frequency - Transition: 65MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 15 W
Produkt ist nicht verfügbar
MJE271 mje270-d.pdf
MJE271
Hersteller: onsemi
Description: TRANS PNP DARL 100V 2A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V
Frequency - Transition: 6MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
MJE271G mje270-d.pdf
MJE271G
Hersteller: onsemi
Description: TRANS PNP DARL 100V 2A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 1.2mA, 120mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 120mA, 10V
Frequency - Transition: 6MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
MJE5731 mje5730-d.pdf
MJE5731
Hersteller: onsemi
Description: TRANS PNP 350V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 40 W
Produkt ist nicht verfügbar
MJE5731G mje5730-d.pdf
MJE5731G
Hersteller: onsemi
Description: TRANS PNP 350V 1A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 200mA, 1A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 40 W
auf Bestellung 319 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.94 EUR
50+ 1.57 EUR
100+ 1.24 EUR
Mindestbestellmenge: 10
MJE703 mje700-d.pdf
MJE703
Hersteller: onsemi
Description: TRANS PNP DARL 80V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Produkt ist nicht verfügbar
MJE703G mje700-d.pdf
MJE703G
Hersteller: onsemi
Description: TRANS PNP DARL 80V 4A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 40mA, 2A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Produkt ist nicht verfügbar
MJF2955G mjf3055-d.pdf
MJF2955G
Hersteller: onsemi
Description: TRANS PNP 90V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.3A, 10A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 2MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 90 V
Power - Max: 2 W
auf Bestellung 703 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.81 EUR
50+ 1.46 EUR
100+ 1.2 EUR
500+ 1.08 EUR
Mindestbestellmenge: 10
MJF31CG mjf31c-d.pdf
MJF31CG
Hersteller: onsemi
Description: TRANS NPN 100V 3A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220FP
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
auf Bestellung 3979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.02 EUR
50+ 1.64 EUR
100+ 1.3 EUR
500+ 1.1 EUR
1000+ 0.9 EUR
2000+ 0.84 EUR
Mindestbestellmenge: 9
MJF32C mjf31c-d.pdf
MJF32C
Hersteller: onsemi
Description: TRANS PNP 100V 3A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
MJF32CG mjf31c-d.pdf
MJF32CG
Hersteller: onsemi
Description: TRANS PNP 100V 3A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
auf Bestellung 7002 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.8 EUR
10+ 1.78 EUR
100+ 1.19 EUR
500+ 0.94 EUR
1000+ 0.86 EUR
2000+ 0.79 EUR
5000+ 0.72 EUR
Mindestbestellmenge: 7
MJF45H11 mjf44h11-d.pdf
MJF45H11
Hersteller: onsemi
Description: TRANS PNP 80V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-220FP
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Produkt ist nicht verfügbar
MJF45H11G mjf44h11-d.pdf
MJF45H11G
Hersteller: onsemi
Description: TRANS PNP 80V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-220FP
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 216 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.62 EUR
50+ 2.11 EUR
100+ 1.67 EUR
Mindestbestellmenge: 7
MJL0281A mjl0281a-d.pdf
MJL0281A
Hersteller: onsemi
Description: TRANS NPN 260V 15A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-264
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 260 V
Power - Max: 180 W
Produkt ist nicht verfügbar
MJW0281AG MJW0281A,%200302A.pdf
MJW0281AG
Hersteller: onsemi
Description: TRANS NPN 260V 15A TO-247
Produkt ist nicht verfügbar
MJW0302AG MJW0281A, 0302A.pdf
MJW0302AG
Hersteller: onsemi
Description: TRANS PNP 260V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 3A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 260 V
Power - Max: 150 W
Produkt ist nicht verfügbar
MJW18020G mjw18020-d.pdf
MJW18020G
Hersteller: onsemi
Description: TRANS NPN 450V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 4A, 20A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 14 @ 3A, 5V
Frequency - Transition: 13MHz
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 250 W
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+13.11 EUR
Mindestbestellmenge: 2
MJW21191 mjw21192-d.pdf
MJW21191
Hersteller: onsemi
Description: TRANS PNP 150V 8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 1.6A, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-247-3
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 125 W
Produkt ist nicht verfügbar
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