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FDS4897AC FDS4897AC onsemi fds4897ac-d.pdf Description: MOSFET N/P-CH 40V 6.1A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.2A
Drain to Source Voltage (Vdss): 40V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FSA2268L10X FSA2268L10X onsemi Description: IC SWITCH DUAL SPDT 10MICROPAK
Number of Channels: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: 10-MicroPak™
-3db Bandwidth: 50MHz
On-State Resistance (Max): 300mOhm (Typ)
Applications: Audio
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN Exposed Pad
Features: Break-Before-Make
Packaging: Cut Tape (CT)
auf Bestellung 9800 Stücke:
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8+2.92 EUR
12+1.8 EUR
25+1.51 EUR
100+1.18 EUR
250+1.01 EUR
500+0.92 EUR
1000+0.83 EUR
2500+0.74 EUR
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NDB5060L NDB5060L onsemi ndb5060l-d.pdf Description: MOSFET N-CH 60V 26A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 13A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 30 V
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10+4.45 EUR
100+3.11 EUR
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NSR0240HT1G NSR0240HT1G onsemi nsr0240h-d.pdf Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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6000+0.074 EUR
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NSR0240V2T1G NSR0240V2T1G onsemi nsr0240v2t1-d.pdf Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Produkt ist nicht verfügbar
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NSR0340HT1G NSR0340HT1G onsemi nsr0340h-d.pdf Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
Produkt ist nicht verfügbar
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NSR0340V2T1G NSR0340V2T1G onsemi nsr0340v2t1-d.pdf Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
auf Bestellung 6000 Stücke:
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3000+0.098 EUR
6000+0.087 EUR
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NSR0240HT1G NSR0240HT1G onsemi nsr0240h-d.pdf Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
auf Bestellung 21000 Stücke:
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48+0.44 EUR
79+0.27 EUR
126+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
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NSR0240V2T1G NSR0240V2T1G onsemi nsr0240v2t1-d.pdf Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Produkt ist nicht verfügbar
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NSR0340HT1G NSR0340HT1G onsemi nsr0340h-d.pdf Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
Produkt ist nicht verfügbar
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NSR0340V2T1G NSR0340V2T1G onsemi nsr0340v2t1-d.pdf Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
auf Bestellung 10800 Stücke:
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40+0.52 EUR
68+0.31 EUR
108+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
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NST3904F3T5G NST3904F3T5G onsemi nst3904f3-d.pdf Description: TRANS NPN 40V 0.2A SOT-1123
Power - Max: 290 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: SOT-1123
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NST847BF3T5G NST847BF3T5G onsemi nst847bf3-d.pdf Description: TRANS NPN 45V 0.1A SOT1123
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Cut Tape (CT)
Power - Max: 290 mW
auf Bestellung 12586 Stücke:
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24+0.9 EUR
34+0.62 EUR
100+0.31 EUR
500+0.26 EUR
1000+0.19 EUR
2000+0.15 EUR
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NSR0520V2T1G NSR0520V2T1G onsemi nsr0520v2t1-d.pdf Description: DIODE SCHOTTKY 20V 500MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
Produkt ist nicht verfügbar
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NSR0530P2T5G NSR0530P2T5G onsemi nsr0530p2-d.pdf Description: DIODE SCHOTTKY 30V 500MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
auf Bestellung 72000 Stücke:
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39+0.55 EUR
62+0.35 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
2000+0.12 EUR
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FDP15N40 FDP15N40 onsemi fdp15n40-d.pdf Description: MOSFET N-CH 400V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 25 V
Produkt ist nicht verfügbar
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FDP19N40 FDP19N40 onsemi fdp19n40-d.pdf Description: MOSFET N-CH 400V 19A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 9.5A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 25 V
Produkt ist nicht verfügbar
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FGPF70N33BTTU FGPF70N33BTTU onsemi FGPF70N33BT.pdf Description: IGBT 330V 48W TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 70A
Supplier Device Package: TO-220F-3
IGBT Type: Trench
Gate Charge: 49 nC
Voltage - Collector Emitter Breakdown (Max): 330 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 48 W
Produkt ist nicht verfügbar
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FAN5361UC12X FAN5361UC12X onsemi FAN5361%20rev2008.pdf Description: IC REG BUCK 1.2V 600MA 6WLCSP
Produkt ist nicht verfügbar
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FDMS6681Z FDMS6681Z onsemi fdms6681z-d.pdf Description: MOSFET P-CH 30V 21.1A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 10380 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 49A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FAN5361UC12X FAN5361UC12X onsemi FAN5361%20rev2008.pdf Description: IC REG BUCK 1.2V 600MA 6WLCSP
Produkt ist nicht verfügbar
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FDMS6681Z FDMS6681Z onsemi fdms6681z-d.pdf Description: MOSFET P-CH 30V 21.1A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 10380 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 49A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FDA28N50F FDA28N50F onsemi fda28n50f-d.pdf Description: MOSFET N-CH 500V 28A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 14A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5387 pF @ 25 V
Produkt ist nicht verfügbar
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FDMA3023PZ FDMA3023PZ onsemi FDMA3023PZ-D.pdf Description: MOSFET 2P-CH 30V 2.9A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Produkt ist nicht verfügbar
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FDMC6675BZ FDMC6675BZ onsemi fdmc6675bz-d.pdf Description: MOSFET P-CH 30V 9.5A/20A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 9.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 15 V
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3000+0.95 EUR
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FDMS6673BZ FDMS6673BZ onsemi fdms6673bz-d.pdf Description: MOSFET P-CH 30V 15.2A/28A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 15 V
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3000+1.56 EUR
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FDMS7670 FDMS7670 onsemi fdms7670-d.pdf Description: MOSFET N-CH 30V 21A/42A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 21A, 10V
Power Dissipation (Max): 2.5W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4105 pF @ 15 V
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FDS8958B FDS8958B onsemi FDS8958B-D.PDF Description: MOSFET N/P-CH 30V 6.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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LM78M08CT LM78M08CT onsemi LM78Mxx.pdf Description: IC REG LINEAR 8V 500MA TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 8V
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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LM78M18CT LM78M18CT onsemi LM78Mxx.pdf Description: IC REG LINEAR 18V 500MA TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 18V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature, Short Circuit
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LM78T05CT LM78T05CT onsemi LM78T05.pdf Description: IC REG LINEAR 5V 3A TO220-3
Protection Features: Over Temperature, Short Circuit
Voltage Dropout (Max): 2.5V @ 3A
PSRR: 75dB (120Hz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 6 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 3A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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LM78T12CT LM78T12CT onsemi LM78T05.pdf Description: IC REG LINEAR 12V 3A TO220-3
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Tube
Protection Features: Over Temperature, Short Circuit
Voltage Dropout (Max): 2.5V @ 3A
PSRR: 67dB (120Hz)
Voltage - Output (Min/Fixed): 12V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 6 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 3A
Produkt ist nicht verfügbar
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LM78T15CT LM78T15CT onsemi LM78T05.pdf Description: IC REG LINEAR 15V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 3A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 15V
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 2.5V @ 3A
Protection Features: Over Temperature, Short Circuit
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FDMA3023PZ FDMA3023PZ onsemi FDMA3023PZ-D.pdf Description: MOSFET 2P-CH 30V 2.9A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
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FDMC6675BZ FDMC6675BZ onsemi fdmc6675bz-d.pdf Description: MOSFET P-CH 30V 9.5A/20A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 9.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 15 V
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FDMS6673BZ FDMS6673BZ onsemi fdms6673bz-d.pdf Description: MOSFET P-CH 30V 15.2A/28A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 15 V
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FDMS7670 FDMS7670 onsemi fdms7670-d.pdf Description: MOSFET N-CH 30V 21A/42A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 4105 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 62W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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FDS8958B FDS8958B onsemi FDS8958B-D.PDF Description: MOSFET N/P-CH 30V 6.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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LM78M12CT LM78M12CT onsemi LM78Mxx.pdf Description: IC REG LINEAR 12V 500MA TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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1N4728ATR 1N4728ATR onsemi 1n4736at-d.pdf Description: DIODE ZENER 3.3V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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1N4743ATR 1N4743ATR onsemi 1n4736at-d.pdf Description: DIODE ZENER 13V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
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1N4749ATR 1N4749ATR onsemi 1n4736at-d.pdf Description: DIODE ZENER 24V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
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1N5226BTR 1N5226BTR onsemi 1N5221B-D.PDF Description: DIODE ZENER 3.3V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
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1N5228BTR 1N5228BTR onsemi 1N5221B-D.PDF Description: DIODE ZENER 3.9V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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1N5245BTR onsemi Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
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1N5254BTR 1N5254BTR onsemi 1n5221b-d.pdf Description: DIODE ZENER 27V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
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MMBZ5229B MMBZ5229B onsemi MMBZ5221B-5257B.pdf Description: DIODE ZENER 4.3V 350MW SOT23-3
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
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MMSZ5228B MMSZ5228B onsemi MMSZ5227B.pdf Description: DIODE ZENER 3.9V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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BAS116LT3G BAS116LT3G onsemi BAS116LT1-D.PDF Description: DIODE STANDARD 75V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
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BAS16HT3G BAS16HT3G onsemi BAS16HT1-D.PDF Description: DIODE STANDARD 100V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
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BAS20LT3G BAS20LT3G onsemi BAS19LT1-D.PDF Description: DIODE STANDARD 200V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
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BAS40LT3G BAS40LT3G onsemi bas40lt1-d.pdf Description: DIODE SCHOTTKY 40V 120MA SOT233
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io): 120mA
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Produkt ist nicht verfügbar
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BC857CLT3G BC857CLT3G onsemi BC856ALT1-D.PDF Description: TRANS PNP 45V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
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CS8151D2G CS8151D2G onsemi cs8151-d.pdf Description: IC REG LINEAR 5V 100MA 14SOIC
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LM2596DSADJG LM2596DSADJG onsemi lm2596-d.pdf Description: IC REG BUCK BOOST ADJ 3A D2PAK-5
Packaging: Tube
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up, Step-Down, Step-Up/Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive or Negative
Frequency - Switching: 150kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost, Buck-Boost
Supplier Device Package: D2PAK-5
Synchronous Rectifier: No
Voltage - Output (Max): 37V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
Part Status: Active
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100+2.78 EUR
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1000+2.46 EUR
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LM2596DSADJR4G LM2596DSADJR4G onsemi lm2596-d.pdf Description: IC REG BUCK BOOST ADJ 3A D2PAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up, Step-Down, Step-Up/Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive or Negative
Frequency - Switching: 150kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost, Buck-Boost
Supplier Device Package: D2PAK-5
Synchronous Rectifier: No
Voltage - Output (Max): 37V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
Part Status: Active
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LM2596TADJG LM2596TADJG onsemi lm2596-d.pdf Description: IC REG BUCK BOOST ADJ 3A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down, Step-Up/Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive or Negative
Frequency - Switching: 150kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost, Buck-Boost
Supplier Device Package: TO-220-5
Synchronous Rectifier: No
Voltage - Output (Max): 37V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
Part Status: Obsolete
Produkt ist nicht verfügbar
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LM2596TVADJG LM2596TVADJG onsemi lm2596-d.pdf Description: IC REG BUCK BOOST ADJ 3A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down, Step-Up/Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive or Negative
Frequency - Switching: 150kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost, Buck-Boost
Supplier Device Package: TO-220-5
Synchronous Rectifier: No
Voltage - Output (Max): 37V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
Part Status: Active
auf Bestellung 456 Stücke:
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M74VHCT126ADTR2G M74VHCT126ADTR2G onsemi mc74vhct126a-d.pdf Description: IC BUF NON-INVERT 5.5V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-TSSOP
Part Status: Active
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MBR10L60CTG MBR10L60CTG onsemi mbr10l60ct-d.pdf Description: DIODE ARRAY SCHOTTKY 60V TO220AB
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FDS4897AC fds4897ac-d.pdf
FDS4897AC
Hersteller: onsemi
Description: MOSFET N/P-CH 40V 6.1A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1055pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.1A, 5.2A
Drain to Source Voltage (Vdss): 40V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FSA2268L10X
FSA2268L10X
Hersteller: onsemi
Description: IC SWITCH DUAL SPDT 10MICROPAK
Number of Channels: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: 10-MicroPak™
-3db Bandwidth: 50MHz
On-State Resistance (Max): 300mOhm (Typ)
Applications: Audio
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN Exposed Pad
Features: Break-Before-Make
Packaging: Cut Tape (CT)
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8+2.92 EUR
12+1.8 EUR
25+1.51 EUR
100+1.18 EUR
250+1.01 EUR
500+0.92 EUR
1000+0.83 EUR
2500+0.74 EUR
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NDB5060L ndb5060l-d.pdf
NDB5060L
Hersteller: onsemi
Description: MOSFET N-CH 60V 26A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 13A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 30 V
auf Bestellung 522 Stücke:
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4+6.81 EUR
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NSR0240HT1G nsr0240h-d.pdf
NSR0240HT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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3000+0.082 EUR
6000+0.074 EUR
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NSR0240V2T1G nsr0240v2t1-d.pdf
NSR0240V2T1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Produkt ist nicht verfügbar
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NSR0340HT1G nsr0340h-d.pdf
NSR0340HT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
Produkt ist nicht verfügbar
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NSR0340V2T1G nsr0340v2t1-d.pdf
NSR0340V2T1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
auf Bestellung 6000 Stücke:
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3000+0.098 EUR
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NSR0240HT1G nsr0240h-d.pdf
NSR0240HT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
auf Bestellung 21000 Stücke:
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48+0.44 EUR
79+0.27 EUR
126+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
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NSR0240V2T1G nsr0240v2t1-d.pdf
NSR0240V2T1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Produkt ist nicht verfügbar
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NSR0340HT1G nsr0340h-d.pdf
NSR0340HT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
Produkt ist nicht verfügbar
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NSR0340V2T1G nsr0340v2t1-d.pdf
NSR0340V2T1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 200 mA
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
auf Bestellung 10800 Stücke:
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40+0.52 EUR
68+0.31 EUR
108+0.19 EUR
500+0.14 EUR
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NST3904F3T5G nst3904f3-d.pdf
NST3904F3T5G
Hersteller: onsemi
Description: TRANS NPN 40V 0.2A SOT-1123
Power - Max: 290 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: SOT-1123
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NST847BF3T5G nst847bf3-d.pdf
NST847BF3T5G
Hersteller: onsemi
Description: TRANS NPN 45V 0.1A SOT1123
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-1123
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Cut Tape (CT)
Power - Max: 290 mW
auf Bestellung 12586 Stücke:
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24+0.9 EUR
34+0.62 EUR
100+0.31 EUR
500+0.26 EUR
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NSR0520V2T1G nsr0520v2t1-d.pdf
NSR0520V2T1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 500MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
Produkt ist nicht verfügbar
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NSR0530P2T5G nsr0530p2-d.pdf
NSR0530P2T5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 500MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 500 mA
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
auf Bestellung 72000 Stücke:
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AnzahlPrivatkunde
39+0.55 EUR
62+0.35 EUR
100+0.21 EUR
500+0.15 EUR
1000+0.14 EUR
2000+0.12 EUR
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FDP15N40 fdp15n40-d.pdf
FDP15N40
Hersteller: onsemi
Description: MOSFET N-CH 400V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 25 V
Produkt ist nicht verfügbar
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FDP19N40 fdp19n40-d.pdf
FDP19N40
Hersteller: onsemi
Description: MOSFET N-CH 400V 19A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 9.5A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2115 pF @ 25 V
Produkt ist nicht verfügbar
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FGPF70N33BTTU FGPF70N33BT.pdf
FGPF70N33BTTU
Hersteller: onsemi
Description: IGBT 330V 48W TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 70A
Supplier Device Package: TO-220F-3
IGBT Type: Trench
Gate Charge: 49 nC
Voltage - Collector Emitter Breakdown (Max): 330 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 48 W
Produkt ist nicht verfügbar
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FAN5361UC12X FAN5361%20rev2008.pdf
FAN5361UC12X
Hersteller: onsemi
Description: IC REG BUCK 1.2V 600MA 6WLCSP
Produkt ist nicht verfügbar
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FDMS6681Z fdms6681z-d.pdf
FDMS6681Z
Hersteller: onsemi
Description: MOSFET P-CH 30V 21.1A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 10380 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 49A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FAN5361UC12X FAN5361%20rev2008.pdf
FAN5361UC12X
Hersteller: onsemi
Description: IC REG BUCK 1.2V 600MA 6WLCSP
Produkt ist nicht verfügbar
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FDMS6681Z fdms6681z-d.pdf
FDMS6681Z
Hersteller: onsemi
Description: MOSFET P-CH 30V 21.1A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 10380 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 22.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 21.1A (Ta), 49A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FDA28N50F fda28n50f-d.pdf
FDA28N50F
Hersteller: onsemi
Description: MOSFET N-CH 500V 28A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 14A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5387 pF @ 25 V
Produkt ist nicht verfügbar
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FDMA3023PZ FDMA3023PZ-D.pdf
FDMA3023PZ
Hersteller: onsemi
Description: MOSFET 2P-CH 30V 2.9A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Produkt ist nicht verfügbar
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FDMC6675BZ fdmc6675bz-d.pdf
FDMC6675BZ
Hersteller: onsemi
Description: MOSFET P-CH 30V 9.5A/20A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 9.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.95 EUR
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FDMS6673BZ fdms6673bz-d.pdf
FDMS6673BZ
Hersteller: onsemi
Description: MOSFET P-CH 30V 15.2A/28A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 15 V
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.56 EUR
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FDMS7670 fdms7670-d.pdf
FDMS7670
Hersteller: onsemi
Description: MOSFET N-CH 30V 21A/42A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 21A, 10V
Power Dissipation (Max): 2.5W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4105 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.9 EUR
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FDS8958B FDS8958B-D.PDF
FDS8958B
Hersteller: onsemi
Description: MOSFET N/P-CH 30V 6.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
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LM78M08CT LM78Mxx.pdf
LM78M08CT
Hersteller: onsemi
Description: IC REG LINEAR 8V 500MA TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 8V
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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LM78M18CT LM78Mxx.pdf
LM78M18CT
Hersteller: onsemi
Description: IC REG LINEAR 18V 500MA TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 18V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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LM78T05CT LM78T05.pdf
LM78T05CT
Hersteller: onsemi
Description: IC REG LINEAR 5V 3A TO220-3
Protection Features: Over Temperature, Short Circuit
Voltage Dropout (Max): 2.5V @ 3A
PSRR: 75dB (120Hz)
Part Status: Obsolete
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 6 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 3A
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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LM78T12CT LM78T05.pdf
LM78T12CT
Hersteller: onsemi
Description: IC REG LINEAR 12V 3A TO220-3
Mounting Type: Through Hole
Output Type: Fixed
Package / Case: TO-220-3
Packaging: Tube
Protection Features: Over Temperature, Short Circuit
Voltage Dropout (Max): 2.5V @ 3A
PSRR: 67dB (120Hz)
Voltage - Output (Min/Fixed): 12V
Supplier Device Package: TO-220-3
Number of Regulators: 1
Voltage - Input (Max): 35V
Current - Quiescent (Iq): 6 mA
Output Configuration: Positive
Operating Temperature: 0°C ~ 125°C
Current - Output: 3A
Produkt ist nicht verfügbar
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LM78T15CT LM78T05.pdf
LM78T15CT
Hersteller: onsemi
Description: IC REG LINEAR 15V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 3A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 15V
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 2.5V @ 3A
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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FDMA3023PZ FDMA3023PZ-D.pdf
FDMA3023PZ
Hersteller: onsemi
Description: MOSFET 2P-CH 30V 2.9A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 530pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
auf Bestellung 1980 Stücke:
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9+2.49 EUR
14+1.57 EUR
100+1.04 EUR
500+0.81 EUR
1000+0.74 EUR
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FDMC6675BZ fdmc6675bz-d.pdf
FDMC6675BZ
Hersteller: onsemi
Description: MOSFET P-CH 30V 9.5A/20A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 9.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2865 pF @ 15 V
auf Bestellung 4933 Stücke:
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8+2.95 EUR
11+1.99 EUR
100+1.38 EUR
500+1.18 EUR
1000+1.07 EUR
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FDMS6673BZ fdms6673bz-d.pdf
FDMS6673BZ
Hersteller: onsemi
Description: MOSFET P-CH 30V 15.2A/28A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 15.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 15 V
auf Bestellung 58344 Stücke:
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AnzahlPrivatkunde
5+4.32 EUR
10+2.94 EUR
100+2.09 EUR
500+1.73 EUR
1000+1.61 EUR
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FDMS7670 fdms7670-d.pdf
FDMS7670
Hersteller: onsemi
Description: MOSFET N-CH 30V 21A/42A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 4105 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 62W (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 4895 Stücke:
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10+2.26 EUR
14+1.54 EUR
100+1.17 EUR
500+1.08 EUR
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FDS8958B FDS8958B-D.PDF
FDS8958B
Hersteller: onsemi
Description: MOSFET N/P-CH 30V 6.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 15V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar
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LM78M12CT LM78Mxx.pdf
LM78M12CT
Hersteller: onsemi
Description: IC REG LINEAR 12V 500MA TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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1N4728ATR 1n4736at-d.pdf
1N4728ATR
Hersteller: onsemi
Description: DIODE ZENER 3.3V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
auf Bestellung 39502 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
68+0.31 EUR
108+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
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1N4743ATR 1n4736at-d.pdf
1N4743ATR
Hersteller: onsemi
Description: DIODE ZENER 13V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
auf Bestellung 14792 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
40+0.52 EUR
68+0.31 EUR
108+0.19 EUR
500+0.14 EUR
1000+0.13 EUR
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1N4749ATR 1n4736at-d.pdf
1N4749ATR
Hersteller: onsemi
Description: DIODE ZENER 24V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
auf Bestellung 17558 Stücke:
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AnzahlPrivatkunde
40+0.52 EUR
68+0.31 EUR
108+0.19 EUR
500+0.14 EUR
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1N5226BTR 1N5221B-D.PDF
1N5226BTR
Hersteller: onsemi
Description: DIODE ZENER 3.3V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Produkt ist nicht verfügbar
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1N5228BTR 1N5221B-D.PDF
1N5228BTR
Hersteller: onsemi
Description: DIODE ZENER 3.9V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 60904 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
112+0.19 EUR
180+0.12 EUR
500+0.084 EUR
1000+0.074 EUR
2000+0.065 EUR
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1N5245BTR
Hersteller: onsemi
Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
auf Bestellung 110948 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
110+0.19 EUR
178+0.12 EUR
500+0.086 EUR
1000+0.075 EUR
2000+0.065 EUR
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1N5254BTR 1n5221b-d.pdf
1N5254BTR
Hersteller: onsemi
Description: DIODE ZENER 27V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: DO-35
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
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MMBZ5229B MMBZ5221B-5257B.pdf
MMBZ5229B
Hersteller: onsemi
Description: DIODE ZENER 4.3V 350MW SOT23-3
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 350 mW
Supplier Device Package: SOT-23-3
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMSZ5228B MMSZ5227B.pdf
MMSZ5228B
Hersteller: onsemi
Description: DIODE ZENER 3.9V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 23 Ohms
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
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BAS116LT3G BAS116LT1-D.PDF
BAS116LT3G
Hersteller: onsemi
Description: DIODE STANDARD 75V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Produkt ist nicht verfügbar
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BAS16HT3G BAS16HT1-D.PDF
BAS16HT3G
Hersteller: onsemi
Description: DIODE STANDARD 100V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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BAS20LT3G BAS19LT1-D.PDF
BAS20LT3G
Hersteller: onsemi
Description: DIODE STANDARD 200V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Produkt ist nicht verfügbar
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BAS40LT3G bas40lt1-d.pdf
BAS40LT3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 120MA SOT233
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-23-3 (TO-236)
Current - Average Rectified (Io): 120mA
Capacitance @ Vr, F: 5pF @ 1V, 1MHz
Produkt ist nicht verfügbar
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BC857CLT3G BC856ALT1-D.PDF
BC857CLT3G
Hersteller: onsemi
Description: TRANS PNP 45V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Produkt ist nicht verfügbar
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CS8151D2G cs8151-d.pdf
CS8151D2G
Hersteller: onsemi
Description: IC REG LINEAR 5V 100MA 14SOIC
Produkt ist nicht verfügbar
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LM2596DSADJG lm2596-d.pdf
LM2596DSADJG
Hersteller: onsemi
Description: IC REG BUCK BOOST ADJ 3A D2PAK-5
Packaging: Tube
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up, Step-Down, Step-Up/Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive or Negative
Frequency - Switching: 150kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost, Buck-Boost
Supplier Device Package: D2PAK-5
Synchronous Rectifier: No
Voltage - Output (Max): 37V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
Part Status: Active
auf Bestellung 5918 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.58 EUR
10+3.4 EUR
50+2.93 EUR
100+2.78 EUR
250+2.63 EUR
500+2.53 EUR
1000+2.46 EUR
2500+2.38 EUR
5000+2.33 EUR
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LM2596DSADJR4G lm2596-d.pdf
LM2596DSADJR4G
Hersteller: onsemi
Description: IC REG BUCK BOOST ADJ 3A D2PAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up, Step-Down, Step-Up/Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive or Negative
Frequency - Switching: 150kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost, Buck-Boost
Supplier Device Package: D2PAK-5
Synchronous Rectifier: No
Voltage - Output (Max): 37V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
Part Status: Active
auf Bestellung 24000 Stücke:
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AnzahlPrivatkunde
800+2.39 EUR
1600+2.33 EUR
Mindestbestellmenge: 800 Stücke
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LM2596TADJG lm2596-d.pdf
LM2596TADJG
Hersteller: onsemi
Description: IC REG BUCK BOOST ADJ 3A TO220-5
Packaging: Tube
Package / Case: TO-220-5
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down, Step-Up/Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive or Negative
Frequency - Switching: 150kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost, Buck-Boost
Supplier Device Package: TO-220-5
Synchronous Rectifier: No
Voltage - Output (Max): 37V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
Part Status: Obsolete
Produkt ist nicht verfügbar
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LM2596TVADJG lm2596-d.pdf
LM2596TVADJG
Hersteller: onsemi
Description: IC REG BUCK BOOST ADJ 3A TO220-5
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down, Step-Up/Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive or Negative
Frequency - Switching: 150kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost, Buck-Boost
Supplier Device Package: TO-220-5
Synchronous Rectifier: No
Voltage - Output (Max): 37V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
Part Status: Active
auf Bestellung 456 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.36 EUR
10+3.24 EUR
50+2.78 EUR
100+2.64 EUR
250+2.5 EUR
Mindestbestellmenge: 5 Stücke
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M74VHCT126ADTR2G mc74vhct126a-d.pdf
M74VHCT126ADTR2G
Hersteller: onsemi
Description: IC BUF NON-INVERT 5.5V 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 14-TSSOP
Part Status: Active
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.5 EUR
5000+0.46 EUR
7500+0.44 EUR
12500+0.43 EUR
17500+0.42 EUR
Mindestbestellmenge: 2500 Stücke
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MBR10L60CTG mbr10l60ct-d.pdf
MBR10L60CTG
Hersteller: onsemi
Description: DIODE ARRAY SCHOTTKY 60V TO220AB
auf Bestellung 82 Stücke:
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