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MPSA18RLRA MPSA18RLRA onsemi MPSA18%20Rev3.pdf Description: TRANS NPN 45V 0.2A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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2N5401RLRA 2N5401RLRA onsemi 2N5401-D.PDF Description: TRANS PNP 150V 0.6A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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MPS4126RLRA MPS4126RLRA onsemi MPS4126%20Rev2.pdf Description: TRANS PNP 25V 0.2A TO92
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
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MPS4250ARLRM MPS4250ARLRM onsemi MPS4250%20Rev2.pdf Description: TRANS PNP 40V 0.05A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Box (TB)
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MPSA63RLRA MPSA63RLRA onsemi MPSA62%2C%2063%2C%2064%20Rev2.pdf Description: TRANS PNP DARL 30V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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MPSA77 MPSA77 onsemi MPSA77.pdf Description: TRANS PNP DARL 60V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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2N5551RLRA 2N5551RLRA onsemi 2n5551t-d.pdf Description: TRANS NPN 160V 0.6A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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2N5087RLRA 2N5087RLRA onsemi 2N5087%20Rev3.pdf Description: TRANS PNP 50V 0.05A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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2N6427 2N6427 onsemi 2N6427%2C%20MMBT6427.pdf Description: TRANS NPN DARL 40V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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MMBF170LT1 MMBF170LT1 onsemi mmbf170lt1-d.pdf Description: MOSFET N-CH 60V 500MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
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MPS8098RLRA MPS8098RLRA onsemi MPS809x, 859x Rev5.pdf Description: TRANS NPN 60V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MPS8598RLRA MPS8598RLRA onsemi MPS809x,%20859x%20Rev5.pdf Description: TRANS PNP 60V 0.5A TO92
Produkt ist nicht verfügbar
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MPS6601 MPS6601 onsemi MPS66x1%2C%20665x%20Rev4.pdf Description: TRANS NPN 25V 1A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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MPS6602 MPS6602 onsemi MPS66x1, 665x Rev4.pdf Description: TRANS NPN 40V 1A TO92
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 625 mW
Produkt ist nicht verfügbar
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2N7000RLRA 2N7000RLRA onsemi NDS7002A-D.PDF Description: MOSFET N-CH 60V 200MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Produkt ist nicht verfügbar
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MPS3563 MPS3563 onsemi mps918-d.pdf Description: TRANS NPN 12V 0.05A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
Frequency - Transition: 600MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
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MPS750 MPS750 onsemi MPS65x%2C%2075x%20Rev2.pdf Description: TRANS PNP 40V 2A TO92
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 75MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Produkt ist nicht verfügbar
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MPS918 MPS918 onsemi mps918-d.pdf Description: TRANS NPN 15V 0.05A TO92
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 600MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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2N6520RLRA 2N6520RLRA onsemi 2N6515-D.PDF Description: TRANS PNP 350V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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MPS651RLRA MPS651RLRA onsemi MPS65x%2C%2075x%20Rev2.pdf Description: TRANS NPN 60V 2A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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MMBT8099LT1 MMBT8099LT1 onsemi mmbt8099lt1-d.pdf Description: TRANS NPN 80V 0.5A SOT23-3
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MPS6725 MPS6725 onsemi mps6724-d.pdf Description: TRANS NPN DARL 50V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Frequency - Transition: 1GHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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MPS6727 MPS6727 onsemi Description: TRANS PNP 40V 1A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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MPSW01A MPSW01A onsemi mpsw01-d.pdf Description: TRANS NPN 40V 1A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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MPSW05 MPSW05 onsemi mpsw05-d.pdf Description: TRANS NPN 60V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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MPSW45A MPSW45A onsemi mpsw45-d.pdf Description: TRANS NPN DARL 50V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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MPSW45 MPSW45 onsemi mpsw45-d.pdf Description: TRANS NPN DARL 40V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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MPSW51A MPSW51A onsemi mpsw51-d.pdf Description: TRANS PNP 40V 1A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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MPSW63 MPSW63 onsemi mpsw63-d.pdf Description: TRANS PNP DARL 30V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
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MPSW92 MPSW92 onsemi mpsw92-d.pdf Description: TRANS PNP 300V 0.5A TO92
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Current - Collector Cutoff (Max): 250nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
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2N6517 2N6517 onsemi 2N6515-D.PDF description Description: TRANS NPN 350V 0.5A TO92
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
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2N5458 2N5458 onsemi 2N5457-D.PDF Description: JFET N-CH 25V TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: 135°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 310 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
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2N5461 2N5461 onsemi 2N5460-D.PDF Description: JFET P-CH 40V TO92
Supplier Device Package: TO-92 (TO-226)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Operating Temperature: -65°C ~ 135°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Power - Max: 350 mW
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NTGS3446T1 NTGS3446T1 onsemi ntgs3446-d.pdf Description: MOSFET N-CH 20V 2.5A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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NTF3055-100T1 NTF3055-100T1 onsemi ntf3055-100-d.pdf Description: MOSFET N-CH 60V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
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2N4921 2N4921 onsemi 2n4921-d.pdf Description: TRANS NPN 40V 1A TO126
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-126
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V
Current - Collector Cutoff (Max): 500µA
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2N6038 2N6038 onsemi 2N6035-D.PDF Description: TRANS NPN DARL 60V 4A TO-126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
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2N5655 2N5655 onsemi 2N5655-D.PDF Description: TRANS NPN 250V 0.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10mV
Frequency - Transition: 10MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 20 W
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MMJT9435T1 MMJT9435T1 onsemi mmjt9435-d.pdf Description: TRANS PNP 30V 3A SOT223
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Obsolete
Supplier Device Package: SOT-223 (TO-261)
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 800mA, 1V
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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2N6034 2N6034 onsemi 2n6035-d.pdf Description: TRANS PNP DARL 40V 4A TO126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
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NTD12N10T4 NTD12N10T4 onsemi ntd12n10-d.pdf Description: MOSFET N-CH 100V 12A DPAK
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2N6109 2N6109 onsemi 2n6107-d.pdf Description: TRANS PNP 50V 7A TO-220
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 7 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 4V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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MMDF2C03HDR2 MMDF2C03HDR2 onsemi mmdf2c03hd-d.pdf Description: MOSFET N/P-CH 30V 4.1A/3A 8SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 24V
Current - Continuous Drain (Id) @ 25°C: 4.1A, 3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
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MMDF2P02HDR2 MMDF2P02HDR2 onsemi mmdf2p02hd-d.pdf Description: MOSFET 2P-CH 20V 3.3A 8-SOIC
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2N6667 2N6667 onsemi 2n6667-d.pdf Description: TRANS PNP DARL 60V 10A TO-220
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 10 A
Part Status: Obsolete
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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MMPQ2222AR1 MMPQ2222AR1 onsemi mmpq2222a-d.pdf Description: TRANS 4NPN QUAD 40V 500MA 16SOIC
Part Status: Obsolete
Supplier Device Package: 16-SOIC
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 500mA
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 4 NPN (Quad)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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NTD80N02-001 NTD80N02-001 onsemi ntd80n02-d.pdf Description: MOSFET N-CH 24V 80A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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NTD80N02T4 NTD80N02T4 onsemi ntd80n02-d.pdf Description: MOSFET N-CH 24V 80A DPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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NTP75N06 NTP75N06 onsemi ntp75n06-d.pdf Description: MOSFET N-CH 60V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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MMBT2222ALT1 MMBT2222ALT1 onsemi mmbt2222lt1-d.pdf Description: TRANS NPN 40V 0.6A SOT23-3
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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MMBT2369ALT1 MMBT2369ALT1 onsemi mmbt2369lt1-d.pdf Description: TRANS SS GP NPN 15V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
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2N3904RLRA 2N3904RLRA onsemi 2n3903-d.pdf Description: TRANS NPN 40V 0.2A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100µA, 1V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Cut Tape (CT)
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2N3906RLRA 2N3906RLRA onsemi 2n3906-d.pdf Description: TRANS PNP 40V 0.2A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Cut Tape (CT)
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2N4401RLRA 2N4401RLRA onsemi 2n4401-d.pdf Description: TRANS NPN 40V 0.6A TO92
Part Status: Obsolete
Packaging: Cut Tape (CT)
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MMBT4126LT1 MMBT4126LT1 onsemi mmbt4126lt1-d.pdf Description: TRANS SS GP PNP 25V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMBT2222AWT1 MMBT2222AWT1 onsemi mmbt2222awt1-d.pdf Description: TRANS NPN 40V 0.6A SC70-3
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Obsolete
Supplier Device Package: SC-70-3 (SOT323)
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
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MMBT2907AWT1 MMBT2907AWT1 onsemi mmbt2907awt1-d.pdf Description: TRANS SS GP PNP 60V SOT323
Packaging: Cut Tape (CT)
Part Status: Obsolete
Produkt ist nicht verfügbar
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MMBT5087LT1 MMBT5087LT1 onsemi mmbt5087lt1-d.pdf Description: TRANS PNP 50V 50MA SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Produkt ist nicht verfügbar
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MMBT5089LT1 MMBT5089LT1 onsemi mmbt5088lt1-d.pdf Description: TRANS NPN 25V 50MA SOT23
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 450 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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MPS2222ARLRA MPS2222ARLRA onsemi mps2222-d.pdf Description: TRANS NPN SS GP 40V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
Produkt ist nicht verfügbar
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MPSA18RLRA MPSA18%20Rev3.pdf
MPSA18RLRA
Hersteller: onsemi
Description: TRANS NPN 45V 0.2A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 10mA, 5V
Frequency - Transition: 160MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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2N5401RLRA 2N5401-D.PDF
2N5401RLRA
Hersteller: onsemi
Description: TRANS PNP 150V 0.6A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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MPS4126RLRA MPS4126%20Rev2.pdf
MPS4126RLRA
Hersteller: onsemi
Description: TRANS PNP 25V 0.2A TO92
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Reel (TR)
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 1V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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MPS4250ARLRM MPS4250%20Rev2.pdf
MPS4250ARLRM
Hersteller: onsemi
Description: TRANS PNP 40V 0.05A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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MPSA63RLRA MPSA62%2C%2063%2C%2064%20Rev2.pdf
MPSA63RLRA
Hersteller: onsemi
Description: TRANS PNP DARL 30V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Frequency - Transition: 125MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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MPSA77 MPSA77.pdf
MPSA77
Hersteller: onsemi
Description: TRANS PNP DARL 60V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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2N5551RLRA 2n5551t-d.pdf
2N5551RLRA
Hersteller: onsemi
Description: TRANS NPN 160V 0.6A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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2N5087RLRA 2N5087%20Rev3.pdf
2N5087RLRA
Hersteller: onsemi
Description: TRANS PNP 50V 0.05A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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2N6427 2N6427%2C%20MMBT6427.pdf
2N6427
Hersteller: onsemi
Description: TRANS NPN DARL 40V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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MMBF170LT1 mmbf170lt1-d.pdf
MMBF170LT1
Hersteller: onsemi
Description: MOSFET N-CH 60V 500MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V
Power Dissipation (Max): 225mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Produkt ist nicht verfügbar
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MPS8098RLRA MPS809x, 859x Rev5.pdf
MPS8098RLRA
Hersteller: onsemi
Description: TRANS NPN 60V 0.5A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MPS8598RLRA MPS809x,%20859x%20Rev5.pdf
MPS8598RLRA
Hersteller: onsemi
Description: TRANS PNP 60V 0.5A TO92
Produkt ist nicht verfügbar
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MPS6601 MPS66x1%2C%20665x%20Rev4.pdf
MPS6601
Hersteller: onsemi
Description: TRANS NPN 25V 1A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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MPS6602 MPS66x1, 665x Rev4.pdf
MPS6602
Hersteller: onsemi
Description: TRANS NPN 40V 1A TO92
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 625 mW
Produkt ist nicht verfügbar
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2N7000RLRA NDS7002A-D.PDF
2N7000RLRA
Hersteller: onsemi
Description: MOSFET N-CH 60V 200MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Produkt ist nicht verfügbar
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MPS3563 mps918-d.pdf
MPS3563
Hersteller: onsemi
Description: TRANS NPN 12V 0.05A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8mA, 10V
Frequency - Transition: 600MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
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MPS750 MPS65x%2C%2075x%20Rev2.pdf
MPS750
Hersteller: onsemi
Description: TRANS PNP 40V 2A TO92
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 75MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Produkt ist nicht verfügbar
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MPS918 mps918-d.pdf
MPS918
Hersteller: onsemi
Description: TRANS NPN 15V 0.05A TO92
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 15 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 600MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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2N6520RLRA 2N6515-D.PDF
2N6520RLRA
Hersteller: onsemi
Description: TRANS PNP 350V 0.5A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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MPS651RLRA MPS65x%2C%2075x%20Rev2.pdf
MPS651RLRA
Hersteller: onsemi
Description: TRANS NPN 60V 2A TO92
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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MMBT8099LT1 mmbt8099lt1-d.pdf
MMBT8099LT1
Hersteller: onsemi
Description: TRANS NPN 80V 0.5A SOT23-3
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MPS6725 mps6724-d.pdf
MPS6725
Hersteller: onsemi
Description: TRANS NPN DARL 50V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 1A, 5V
Frequency - Transition: 1GHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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MPS6727
MPS6727
Hersteller: onsemi
Description: TRANS PNP 40V 1A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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MPSW01A mpsw01-d.pdf
MPSW01A
Hersteller: onsemi
Description: TRANS NPN 40V 1A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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MPSW05 mpsw05-d.pdf
MPSW05
Hersteller: onsemi
Description: TRANS NPN 60V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 250mA, 1V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 400mV @ 10mA, 250mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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MPSW45A mpsw45-d.pdf
MPSW45A
Hersteller: onsemi
Description: TRANS NPN DARL 50V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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MPSW45 mpsw45-d.pdf
MPSW45
Hersteller: onsemi
Description: TRANS NPN DARL 40V 1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25000 @ 200mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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MPSW51A mpsw51-d.pdf
MPSW51A
Hersteller: onsemi
Description: TRANS PNP 40V 1A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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MPSW63 mpsw63-d.pdf
MPSW63
Hersteller: onsemi
Description: TRANS PNP DARL 30V 0.5A TO92
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Produkt ist nicht verfügbar
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MPSW92 mpsw92-d.pdf
MPSW92
Hersteller: onsemi
Description: TRANS PNP 300V 0.5A TO92
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Current - Collector Cutoff (Max): 250nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Produkt ist nicht verfügbar
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2N6517 description 2N6515-D.PDF
2N6517
Hersteller: onsemi
Description: TRANS NPN 350V 0.5A TO92
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Produkt ist nicht verfügbar
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2N5458 2N5457-D.PDF
2N5458
Hersteller: onsemi
Description: JFET N-CH 25V TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Operating Temperature: 135°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Power - Max: 310 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 10 nA
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Produkt ist nicht verfügbar
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2N5461 2N5460-D.PDF
2N5461
Hersteller: onsemi
Description: JFET P-CH 40V TO92
Supplier Device Package: TO-92 (TO-226)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
FET Type: P-Channel
Operating Temperature: -65°C ~ 135°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Packaging: Bulk
Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
Power - Max: 350 mW
Produkt ist nicht verfügbar
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NTGS3446T1 ntgs3446-d.pdf
NTGS3446T1
Hersteller: onsemi
Description: MOSFET N-CH 20V 2.5A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTF3055-100T1 ntf3055-100-d.pdf
NTF3055-100T1
Hersteller: onsemi
Description: MOSFET N-CH 60V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
Produkt ist nicht verfügbar
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2N4921 2n4921-d.pdf
2N4921
Hersteller: onsemi
Description: TRANS NPN 40V 1A TO126
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-126
Frequency - Transition: 3MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 500mA, 1V
Current - Collector Cutoff (Max): 500µA
Produkt ist nicht verfügbar
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2N6038 2N6035-D.PDF
2N6038
Hersteller: onsemi
Description: TRANS NPN DARL 60V 4A TO-126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Produkt ist nicht verfügbar
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2N5655 2N5655-D.PDF
2N5655
Hersteller: onsemi
Description: TRANS NPN 250V 0.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 10V @ 100mA, 500mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 10mV
Frequency - Transition: 10MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 20 W
Produkt ist nicht verfügbar
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MMJT9435T1 mmjt9435-d.pdf
MMJT9435T1
Hersteller: onsemi
Description: TRANS PNP 30V 3A SOT223
Power - Max: 3 W
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 3 A
Part Status: Obsolete
Supplier Device Package: SOT-223 (TO-261)
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 800mA, 1V
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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2N6034 2n6035-d.pdf
2N6034
Hersteller: onsemi
Description: TRANS PNP DARL 40V 4A TO126
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 4 A
Part Status: Obsolete
Supplier Device Package: TO-126
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 2A, 3V
Current - Collector Cutoff (Max): 100µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-225AA, TO-126-3
Packaging: Bulk
Produkt ist nicht verfügbar
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NTD12N10T4 ntd12n10-d.pdf
NTD12N10T4
Hersteller: onsemi
Description: MOSFET N-CH 100V 12A DPAK
Produkt ist nicht verfügbar
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2N6109 2n6107-d.pdf
2N6109
Hersteller: onsemi
Description: TRANS PNP 50V 7A TO-220
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 7 A
Part Status: Obsolete
Supplier Device Package: TO-220
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 4V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3.5V @ 3A, 7A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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MMDF2C03HDR2 mmdf2c03hd-d.pdf
MMDF2C03HDR2
Hersteller: onsemi
Description: MOSFET N/P-CH 30V 4.1A/3A 8SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 24V
Current - Continuous Drain (Id) @ 25°C: 4.1A, 3A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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MMDF2P02HDR2 mmdf2p02hd-d.pdf
MMDF2P02HDR2
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 3.3A 8-SOIC
Produkt ist nicht verfügbar
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2N6667 2n6667-d.pdf
2N6667
Hersteller: onsemi
Description: TRANS PNP DARL 60V 10A TO-220
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 10 A
Part Status: Obsolete
Supplier Device Package: TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 3V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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MMPQ2222AR1 mmpq2222a-d.pdf
MMPQ2222AR1
Hersteller: onsemi
Description: TRANS 4NPN QUAD 40V 500MA 16SOIC
Part Status: Obsolete
Supplier Device Package: 16-SOIC
Frequency - Transition: 350MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 500mA
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 4 NPN (Quad)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NTD80N02-001 ntd80n02-d.pdf
NTD80N02-001
Hersteller: onsemi
Description: MOSFET N-CH 24V 80A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
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NTD80N02T4 ntd80n02-d.pdf
NTD80N02T4
Hersteller: onsemi
Description: MOSFET N-CH 24V 80A DPAK
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Drain to Source Voltage (Vdss): 24 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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NTP75N06 ntp75n06-d.pdf
NTP75N06
Hersteller: onsemi
Description: MOSFET N-CH 60V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 4510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 214W (Tj)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 37.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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MMBT2222ALT1 mmbt2222lt1-d.pdf
MMBT2222ALT1
Hersteller: onsemi
Description: TRANS NPN 40V 0.6A SOT23-3
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMBT2369ALT1 mmbt2369lt1-d.pdf
MMBT2369ALT1
Hersteller: onsemi
Description: TRANS SS GP NPN 15V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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2N3904RLRA 2n3903-d.pdf
2N3904RLRA
Hersteller: onsemi
Description: TRANS NPN 40V 0.2A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100µA, 1V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 200mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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2N3906RLRA 2n3906-d.pdf
2N3906RLRA
Hersteller: onsemi
Description: TRANS PNP 40V 0.2A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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2N4401RLRA 2n4401-d.pdf
2N4401RLRA
Hersteller: onsemi
Description: TRANS NPN 40V 0.6A TO92
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMBT4126LT1 mmbt4126lt1-d.pdf
MMBT4126LT1
Hersteller: onsemi
Description: TRANS SS GP PNP 25V SOT23
Part Status: Obsolete
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMBT2222AWT1 mmbt2222awt1-d.pdf
MMBT2222AWT1
Hersteller: onsemi
Description: TRANS NPN 40V 0.6A SC70-3
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Obsolete
Supplier Device Package: SC-70-3 (SOT323)
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMBT2907AWT1 mmbt2907awt1-d.pdf
MMBT2907AWT1
Hersteller: onsemi
Description: TRANS SS GP PNP 60V SOT323
Packaging: Cut Tape (CT)
Part Status: Obsolete
Produkt ist nicht verfügbar
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MMBT5087LT1 mmbt5087lt1-d.pdf
MMBT5087LT1
Hersteller: onsemi
Description: TRANS PNP 50V 50MA SOT23
Packaging: Cut Tape (CT)
Part Status: Obsolete
Produkt ist nicht verfügbar
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MMBT5089LT1 mmbt5088lt1-d.pdf
MMBT5089LT1
Hersteller: onsemi
Description: TRANS NPN 25V 50MA SOT23
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 450 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MPS2222ARLRA mps2222-d.pdf
MPS2222ARLRA
Hersteller: onsemi
Description: TRANS NPN SS GP 40V TO92
Packaging: Cut Tape (CT)
Part Status: Obsolete
Produkt ist nicht verfügbar
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