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NLAS4599DTT1G NLAS4599DTT1G onsemi nlas4599-d.pdf Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Switch Time (Ton, Toff) (Max): 14ns, 8ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Charge Injection: 3pC
Voltage - Supply, Single (V+): 2V ~ 5.5V
Supplier Device Package: 6-TSOP
-3db Bandwidth: 220MHz
On-State Resistance (Max): 25Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
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NLAS4717EPFCT1G NLAS4717EPFCT1G onsemi nlas4717ep-d.pdf Description: IC SW SPDTX2 3.5OHM 10MICROBUMP
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 15pF
Switch Time (Ton, Toff) (Max): 30ns, 40ns
Channel-to-Channel Matching (ΔRon): 100mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -110dB @ 1MHz
Charge Injection: 9pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 10-Microbump
-3db Bandwidth: 90MHz
On-State Resistance (Max): 3.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFBGA, FCBGA
Packaging: Cut Tape (CT)
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NLAS4783BMN1R2G NLAS4783BMN1R2G onsemi nlas4783b-d.pdf Description: IC SWITCH SPDT X 3 1OHM 16QFN
Number of Circuits: 3
Part Status: Active
Current - Leakage (IS(off)) (Max): 500nA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 27ns, 20ns
Channel-to-Channel Matching (ΔRon): 400mOhm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -62dB @ 100kHz
Charge Injection: 50pC
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Supplier Device Package: 16-QFN (3x3)
-3db Bandwidth: 17MHz
On-State Resistance (Max): 1Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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NLAS4783MN1R2G NLAS4783MN1R2G onsemi nlas4783-d.pdf Description: IC SWITCH SPDT X 3 1OHM 16QFN
Number of Circuits: 3
Part Status: Active
Current - Leakage (IS(off)) (Max): 500nA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 27ns, 20ns
Channel-to-Channel Matching (ΔRon): 400mOhm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -62dB @ 100kHz
Charge Injection: 50pC
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Supplier Device Package: 16-QFN (3x3)
-3db Bandwidth: 17MHz
On-State Resistance (Max): 1Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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NLAS5223LMNR2G NLAS5223LMNR2G onsemi nlas5223-d.pdf Description: IC SWITCH DUAL SPDT 10WQFN
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NLAS5223MNR2G NLAS5223MNR2G onsemi nlas5223-d.pdf Description: IC SWITCH DUAL SPDT 10WQFN
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 100kHz
Charge Injection: 38pC
Voltage - Supply, Single (V+): 1.65V ~ 3.6V
Supplier Device Package: 10-WQFN (1.4x1.8)
-3db Bandwidth: 17MHz
On-State Resistance (Max): 300mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-WFQFN
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500nA
Channel Capacitance (CS(off), CD(off)): 75pF
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
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NLAS7222AMTR2G NLAS7222AMTR2G onsemi nlas7222a-d.pdf Description: IC USB SWITCH DPDT 10WQFN
Number of Channels: 1
Part Status: Active
Switch Circuit: DPDT
Voltage - Supply, Single (V+): 3V ~ 3.6V
Supplier Device Package: 10-WQFN (1.4x1.8)
-3db Bandwidth: 700MHz
On-State Resistance (Max): 9Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-WFQFN
Features: USB 2.0
Packaging: Cut Tape (CT)
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NLASB3157MTR2G NLASB3157MTR2G onsemi nlasb3157-d.pdf Description: IC SWITCH SPDT X 1 7OHM 6WDFN
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 6.5pF
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel-to-Channel Matching (ΔRon): 150mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -54dB @ 10MHz
Charge Injection: 7pC
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: 6-WDFN (1.2x1)
-3db Bandwidth: 250MHz
On-State Resistance (Max): 7Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-WFDFN
Packaging: Cut Tape (CT)
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NLAST4599DTT1G NLAST4599DTT1G onsemi nlast4599-d.pdf Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Charge Injection: 3pC
Voltage - Supply, Single (V+): 2V ~ 5.5V
Supplier Device Package: 6-TSOP
-3db Bandwidth: 200MHz
On-State Resistance (Max): 25Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Switch Time (Ton, Toff) (Max): 14ns, 8ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
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NLSF595DTR2G NLSF595DTR2G onsemi nlsf595-d.pdf Description: IC LED DRVR LINEAR 12MA 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Voltage - Output: 5.5V
Mounting Type: Surface Mount
Number of Outputs: 8
Type: Linear
Operating Temperature: -55°C ~ 125°C (TA)
Current - Output / Channel: 12mA
Internal Switch(s): Yes
Supplier Device Package: 16-TSSOP
Voltage - Supply (Min): 2V
Voltage - Supply (Max): 5.5V
Part Status: Active
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NLSF595MNR2G NLSF595MNR2G onsemi nlsf595-d.pdf Description: IC LED DRIVER LINEAR 12MA 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Voltage - Output: 5.5V
Mounting Type: Surface Mount
Number of Outputs: 8
Type: Linear
Operating Temperature: -55°C ~ 125°C (TA)
Current - Output / Channel: 12mA
Internal Switch(s): Yes
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply (Min): 2V
Voltage - Supply (Max): 5.5V
Part Status: Active
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NLVLCX125DTR2G NLVLCX125DTR2G onsemi mc74lcx125-d.pdf Description: IC LINE DRVR NON-INVERT 14TSSOP
Supplier Device Package: 14-TSSOP
Number of Bits per Element: 1
Logic Type: Line Driver, Non-Inverting
Number of Elements: 4
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
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NSBC115EDXV6T1G NSBC115EDXV6T1G onsemi dtc115ed-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 100kOhms
Resistor - Base (R1): 100kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
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NSR0320MW2T3G NSR0320MW2T3G onsemi nsr0320mw2t1-d.pdf Description: DIODE SCHOTTKY 20V 1A SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 900 mA
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
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NSR30CM3T5G NSR30CM3T5G onsemi nsr30cm3t5g-d.pdf Description: DIODE ARR SCHOT 30V 200MA SOT723
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOT-723
Current - Average Rectified (Io) (per Diode): 200mA (DC)
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NSS20300MR6T1G NSS20300MR6T1G onsemi nss20300mr6t1g-d.pdf Description: TRANS PNP 20V 3A 6TSOP
Power - Max: 545 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: 6-TSOP
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 320mV @ 20mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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NSS30100LT1G NSS30100LT1G onsemi nss30100lt1g-d.pdf Description: TRANS PNP 30V 1A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 310 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
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NSS30101LT1G NSS30101LT1G onsemi nss30101lt1g-d.pdf Description: TRANS NPN 30V 1A SOT23-3
Power - Max: 310 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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NST30010MXV6T1G NST30010MXV6T1G onsemi nst30010mxv6-d.pdf Description: TRANS 2PNP 30V 100MA SOT-563
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-563
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 PNP (Dual) Matched Pair
Mounting Type: Surface Mount
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NST3904DXV6T1G NST3904DXV6T1G onsemi nst3904dxv6t1-d.pdf Description: TRANS 2NPN 40V 200MA SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-563
Part Status: Active
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NST3946DXV6T1G NST3946DXV6T1G onsemi nst3946dxv6t1-d.pdf Description: TRANS NPN/PNP 40V 200MA SOT-563
Part Status: Active
Supplier Device Package: SOT-563
Frequency - Transition: 300MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
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NST489AMT1G NST489AMT1G onsemi nst489amt1-d.pdf Description: TRANS NPN 30V 2A 6-TSOP
Power - Max: 535 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: 6-TSOP
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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NTB23N03RT4G NTB23N03RT4G onsemi ntb23n03r-d.pdf Description: MOSFET N-CH 25V 23A D2PAK
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NTD14N03RT4G NTD14N03RT4G onsemi ntd14n03r-d.pdf description Description: MOSFET N-CH 25V 2.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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NTD20N06T4G NTD20N06T4G onsemi ntd20n06-d.pdf Description: MOSFET N-CH 60V 20A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 1.88W (Ta), 60W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V
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NTD3055-150T4G NTD3055-150T4G onsemi ntd3055-150-d.pdf Description: MOSFET N-CH 60V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
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NTD40N03RT4G NTD40N03RT4G onsemi ntd40n03r-d.pdf Description: MOSFET N-CH 25V 7.8A/32A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NTD4302T4G NTD4302T4G onsemi ntd4302-d.pdf Description: MOSFET N-CH 30V 8.4A/68A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.04W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc)
FET Type: N-Channel
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NTD78N03T4G NTD78N03T4G onsemi ntd78n03-d.pdf Description: MOSFET N-CH 25V 11.4A/78A DPAK
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NTF5P03T3G NTF5P03T3G onsemi ntf5p03t3-d.pdf Description: MOSFET P-CH 30V 3.7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223 (TO-261)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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NTF6P02T3G NTF6P02T3G onsemi ntf6p02t3-d.pdf Description: MOSFET P-CH 20V 10A SOT223
Power Dissipation (Max): 8.3W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-223 (TO-261)
Vgs(th) (Max) @ Id: 1V @ 250µA
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NTGS3130NT1G NTGS3130NT1G onsemi ntgs3130n-d.pdf Description: MOSFET N-CH 20V 4.23A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.23A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
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NTHD3102CT1G NTHD3102CT1G onsemi nthd3102c-d.pdf Description: MOSFET N/P-CH 20V 4A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
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NTHD4102PT1G NTHD4102PT1G onsemi nthd4102p-d.pdf Description: MOSFET 2P-CH 20V 2.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
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NTHD4P02FT1G NTHD4P02FT1G onsemi NTHD4P02F-D.PDF Description: MOSFET P-CH 20V 2.2A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tj)
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
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NTHS4101PT1G NTHS4101PT1G onsemi nths4101p-d.pdf Description: MOSFET P-CH 20V 4.8A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tj)
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 16 V
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NTHS5404T1G NTHS5404T1G onsemi nths5404t1-d.pdf Description: MOSFET N-CH 20V 5.2A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Produkt ist nicht verfügbar
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NTHS5441T1G NTHS5441T1G onsemi nths5441t1-d.pdf Description: MOSFET P-CH 20V 3.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 5 V
Produkt ist nicht verfügbar
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NTJD4158CT1G NTJD4158CT1G onsemi ntjd4158c-d.pdf Description: MOSFET N/P-CH 30V/20V 0.25A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 250mA, 880mA
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-88/SC70-6/SOT-363
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NTJS4160NT1G NTJS4160NT1G onsemi ntjs4160n-d.pdf Description: MOSFET N-CH 30V 1.8A SC88/SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.75 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 300mW (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
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NTLJD3115PT1G NTLJD3115PT1G onsemi ntljd3115p-d.pdf Description: MOSFET 2P-CH 20V 2.3A 6WDFN
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 710mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
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NTLJD3119CTBG NTLJD3119CTBG onsemi ntljd3119c-d.pdf Description: MOSFET N/P-CH 20V 2.6A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
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NTLJF3117PT1G NTLJF3117PT1G onsemi ntljf3117p-d.pdf Description: MOSFET P-CH 20V 2.3A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 531 pF @ 10 V
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NTLJF4156NT1G NTLJF4156NT1G onsemi ntljf4156n-d.pdf Description: MOSFET N-CH 30V 2.5A 6WDFN
Power Dissipation (Max): 710mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
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NTLJS4114NT1G NTLJS4114NT1G onsemi ntljs4114n-d.pdf Description: MOSFET N-CH 30V 3.6A 6WDFN
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
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100+1.07 EUR
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NTMD4N03R2G NTMD4N03R2G onsemi ntmd4n03r2-d.pdf Description: MOSFET 2N-CH 30V 4A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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15+1.4 EUR
100+0.93 EUR
500+0.71 EUR
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NTMFS4122NT1G NTMFS4122NT1G onsemi ntmfs4122n-d.pdf Description: MOSFET N-CH 30V 9.1A 5DFN
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NTMFS4744NT1G NTMFS4744NT1G onsemi ntmfs4744n-d.pdf Description: MOSFET N-CH 30V 7A 5DFN
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NTMS10P02R2G NTMS10P02R2G onsemi ntms10p02r2-d.pdf Description: MOSFET P-CH 20V 8.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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NTMS4107NR2G NTMS4107NR2G onsemi ntms4107n-d.pdf Description: MOSFET N-CH 30V 11A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 930mW (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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NTMS5P02R2G NTMS5P02R2G onsemi ntms5p02r2-d.pdf Description: MOSFET P-CH 20V 3.95A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 790mW (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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NTR4501NT1 NTR4501NT1 onsemi ntr4501n-d.pdf Description: MOSFET N-CH 20V 3.2A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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NTS4409NT1G NTS4409NT1G onsemi nts4409n-d.pdf Description: MOSFET N-CH 25V 700MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V
Power Dissipation (Max): 280mW (Tj)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
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NUD4011DR2G NUD4011DR2G onsemi nud4011-d.pdf Description: IC LED DRVR LIN PWM 70MA 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 198V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 70mA
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Max): 200V
Part Status: Active
Grade: Automotive
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NUF2042XV6T1G NUF2042XV6T1G onsemi nuf2030xv6-d.pdf Description: FILTER RC(PI) 22 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -55°C ~ 125°C
Values: R = 22Ohms, C = 42pF (Total)
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: USB
Technology: RC (Pi)
Resistance - Channel (Ohms): 22
ESD Protection: Yes
Part Status: Active
Number of Channels: 2
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NUF2114MNT1G NUF2114MNT1G onsemi nuf2114-d.pdf Description: FILTR RC(PI) 9 OHMS/60PF ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 9Ohms, C = 60pF
Height: 0.039" (1.00mm)
Attenuation Value: -30dB @ 900MHz ~ 3GHz
Filter Order: 2nd
Applications: Audio
Technology: RC (Pi)
Center / Cutoff Frequency: 50MHz (Cutoff)
Resistance - Channel (Ohms): 9
ESD Protection: Yes
Part Status: Active
Number of Channels: 2
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NUF2116MNT1G NUF2116MNT1G onsemi nuf2116mn-d.pdf Description: FILTER RC(PI) 64 OHM/50PF SMD
Number of Channels: 2
ESD Protection: Yes
Resistance - Channel (Ohms): 64
Center / Cutoff Frequency: 55MHz (Cutoff)
Technology: RC (Pi)
Applications: Audio
Filter Order: 2nd
Attenuation Value: -35dB @ 800MHz ~ 3GHz
Height: 0.039" (1.00mm)
Values: R = 64Ohms, C = 50pF
Operating Temperature: -40°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm)
Package / Case: 8-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
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NUF2230XV6T1G NUF2230XV6T1G onsemi nuf2230xv6-d.pdf Description: FILTER RC(PI) 100 OHM/16PF SMD
Number of Channels: 2
ESD Protection: Yes
Resistance - Channel (Ohms): 100
Center / Cutoff Frequency: 125MHz (Cutoff)
Technology: RC (Pi)
Applications: Data Lines for Mobile Devices
Filter Order: 2nd
Attenuation Value: -30dB @ 800MHz ~ 900MHz
Height: 0.024" (0.60mm)
Values: R = 100Ohms, C = 16pF
Operating Temperature: -40°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
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NUF4402MNT1G NUF4402MNT1G onsemi nuf4402mn-d.pdf Description: FILTER RC(PI) 100 OHM/12PF SMD
Number of Channels: 4
ESD Protection: Yes
Resistance - Channel (Ohms): 100
Center / Cutoff Frequency: 151MHz (Cutoff)
Technology: RC (Pi)
Applications: Data Lines for Mobile Devices
Filter Order: 2nd
Attenuation Value: -25dB @ 800MHz ~ 3GHz
Height: 0.039" (1.00mm)
Values: R = 100Ohms, C = 12pF
Operating Temperature: -40°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.063" W (1.60mm x 1.60mm)
Package / Case: 8-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
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NUF6401MNT1G NUF6401MNT1G onsemi nuf6401-d.pdf Description: FILTER RC(PI) 100 OHMS ESD SMD
Operating Temperature: -45°C ~ 105°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Package / Case: 12-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Channels: 6
Part Status: Active
ESD Protection: Yes
Resistance - Channel (Ohms): 100
Center / Cutoff Frequency: 110MHz (Cutoff)
Technology: RC (Pi)
Applications: Data Lines for Mobile Devices
Filter Order: 2nd
Attenuation Value: -30dB @ 800MHz ~ 3GHz
Height: 0.039" (1.00mm)
Values: R = 100Ohms, C = 17pF
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NLAS4599DTT1G nlas4599-d.pdf
NLAS4599DTT1G
Hersteller: onsemi
Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Switch Time (Ton, Toff) (Max): 14ns, 8ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Charge Injection: 3pC
Voltage - Supply, Single (V+): 2V ~ 5.5V
Supplier Device Package: 6-TSOP
-3db Bandwidth: 220MHz
On-State Resistance (Max): 25Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
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NLAS4717EPFCT1G nlas4717ep-d.pdf
NLAS4717EPFCT1G
Hersteller: onsemi
Description: IC SW SPDTX2 3.5OHM 10MICROBUMP
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 15pF
Switch Time (Ton, Toff) (Max): 30ns, 40ns
Channel-to-Channel Matching (ΔRon): 100mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -110dB @ 1MHz
Charge Injection: 9pC
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Supplier Device Package: 10-Microbump
-3db Bandwidth: 90MHz
On-State Resistance (Max): 3.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFBGA, FCBGA
Packaging: Cut Tape (CT)
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NLAS4783BMN1R2G nlas4783b-d.pdf
NLAS4783BMN1R2G
Hersteller: onsemi
Description: IC SWITCH SPDT X 3 1OHM 16QFN
Number of Circuits: 3
Part Status: Active
Current - Leakage (IS(off)) (Max): 500nA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 27ns, 20ns
Channel-to-Channel Matching (ΔRon): 400mOhm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -62dB @ 100kHz
Charge Injection: 50pC
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Supplier Device Package: 16-QFN (3x3)
-3db Bandwidth: 17MHz
On-State Resistance (Max): 1Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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NLAS4783MN1R2G nlas4783-d.pdf
NLAS4783MN1R2G
Hersteller: onsemi
Description: IC SWITCH SPDT X 3 1OHM 16QFN
Number of Circuits: 3
Part Status: Active
Current - Leakage (IS(off)) (Max): 500nA
Channel Capacitance (CS(off), CD(off)): 5pF
Switch Time (Ton, Toff) (Max): 27ns, 20ns
Channel-to-Channel Matching (ΔRon): 400mOhm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -62dB @ 100kHz
Charge Injection: 50pC
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Supplier Device Package: 16-QFN (3x3)
-3db Bandwidth: 17MHz
On-State Resistance (Max): 1Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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NLAS5223LMNR2G nlas5223-d.pdf
NLAS5223LMNR2G
Hersteller: onsemi
Description: IC SWITCH DUAL SPDT 10WQFN
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NLAS5223MNR2G nlas5223-d.pdf
NLAS5223MNR2G
Hersteller: onsemi
Description: IC SWITCH DUAL SPDT 10WQFN
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 100kHz
Charge Injection: 38pC
Voltage - Supply, Single (V+): 1.65V ~ 3.6V
Supplier Device Package: 10-WQFN (1.4x1.8)
-3db Bandwidth: 17MHz
On-State Resistance (Max): 300mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-WFQFN
Packaging: Cut Tape (CT)
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 500nA
Channel Capacitance (CS(off), CD(off)): 75pF
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
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NLAS7222AMTR2G nlas7222a-d.pdf
NLAS7222AMTR2G
Hersteller: onsemi
Description: IC USB SWITCH DPDT 10WQFN
Number of Channels: 1
Part Status: Active
Switch Circuit: DPDT
Voltage - Supply, Single (V+): 3V ~ 3.6V
Supplier Device Package: 10-WQFN (1.4x1.8)
-3db Bandwidth: 700MHz
On-State Resistance (Max): 9Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-WFQFN
Features: USB 2.0
Packaging: Cut Tape (CT)
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NLASB3157MTR2G nlasb3157-d.pdf
NLASB3157MTR2G
Hersteller: onsemi
Description: IC SWITCH SPDT X 1 7OHM 6WDFN
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 6.5pF
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel-to-Channel Matching (ΔRon): 150mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -54dB @ 10MHz
Charge Injection: 7pC
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: 6-WDFN (1.2x1)
-3db Bandwidth: 250MHz
On-State Resistance (Max): 7Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-WFDFN
Packaging: Cut Tape (CT)
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NLAST4599DTT1G nlast4599-d.pdf
NLAST4599DTT1G
Hersteller: onsemi
Description: IC SWITCH SPDT X 1 25OHM 6TSOP
Charge Injection: 3pC
Voltage - Supply, Single (V+): 2V ~ 5.5V
Supplier Device Package: 6-TSOP
-3db Bandwidth: 200MHz
On-State Resistance (Max): 25Ohm
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Number of Circuits: 1
Part Status: Active
Current - Leakage (IS(off)) (Max): 1nA
Channel Capacitance (CS(off), CD(off)): 10pF, 10pF
Switch Time (Ton, Toff) (Max): 14ns, 8ns
Channel-to-Channel Matching (ΔRon): 2Ohm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
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NLSF595DTR2G nlsf595-d.pdf
NLSF595DTR2G
Hersteller: onsemi
Description: IC LED DRVR LINEAR 12MA 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Voltage - Output: 5.5V
Mounting Type: Surface Mount
Number of Outputs: 8
Type: Linear
Operating Temperature: -55°C ~ 125°C (TA)
Current - Output / Channel: 12mA
Internal Switch(s): Yes
Supplier Device Package: 16-TSSOP
Voltage - Supply (Min): 2V
Voltage - Supply (Max): 5.5V
Part Status: Active
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NLSF595MNR2G nlsf595-d.pdf
NLSF595MNR2G
Hersteller: onsemi
Description: IC LED DRIVER LINEAR 12MA 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VFQFN Exposed Pad
Voltage - Output: 5.5V
Mounting Type: Surface Mount
Number of Outputs: 8
Type: Linear
Operating Temperature: -55°C ~ 125°C (TA)
Current - Output / Channel: 12mA
Internal Switch(s): Yes
Supplier Device Package: 16-QFN (3x3)
Voltage - Supply (Min): 2V
Voltage - Supply (Max): 5.5V
Part Status: Active
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NLVLCX125DTR2G mc74lcx125-d.pdf
NLVLCX125DTR2G
Hersteller: onsemi
Description: IC LINE DRVR NON-INVERT 14TSSOP
Supplier Device Package: 14-TSSOP
Number of Bits per Element: 1
Logic Type: Line Driver, Non-Inverting
Number of Elements: 4
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2500 Stücke:
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11+2.06 EUR
25+1.95 EUR
100+1.5 EUR
250+1.32 EUR
500+1.26 EUR
1000+0.98 EUR
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NSBC115EDXV6T1G dtc115ed-d.pdf
NSBC115EDXV6T1G
Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT563
Supplier Device Package: SOT-563
Resistor - Emitter Base (R2): 100kOhms
Resistor - Base (R1): 100kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 196000 Stücke:
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27+0.8 EUR
38+0.56 EUR
100+0.29 EUR
500+0.23 EUR
1000+0.17 EUR
2000+0.14 EUR
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NSR0320MW2T3G nsr0320mw2t1-d.pdf
NSR0320MW2T3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 1A SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 900 mA
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
Produkt ist nicht verfügbar
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NSR30CM3T5G nsr30cm3t5g-d.pdf
NSR30CM3T5G
Hersteller: onsemi
Description: DIODE ARR SCHOT 30V 200MA SOT723
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SOT-723
Current - Average Rectified (Io) (per Diode): 200mA (DC)
auf Bestellung 359 Stücke:
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46+0.46 EUR
76+0.27 EUR
107+0.2 EUR
123+0.17 EUR
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NSS20300MR6T1G nss20300mr6t1g-d.pdf
NSS20300MR6T1G
Hersteller: onsemi
Description: TRANS PNP 20V 3A 6TSOP
Power - Max: 545 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: 6-TSOP
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1.5A, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 320mV @ 20mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
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20+1.07 EUR
23+0.93 EUR
100+0.69 EUR
500+0.54 EUR
1000+0.42 EUR
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NSS30100LT1G nss30100lt1g-d.pdf
NSS30100LT1G
Hersteller: onsemi
Description: TRANS PNP 30V 1A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Power - Max: 310 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
auf Bestellung 5351 Stücke:
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28+0.77 EUR
41+0.52 EUR
100+0.35 EUR
500+0.27 EUR
1000+0.25 EUR
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NSS30101LT1G nss30101lt1g-d.pdf
NSS30101LT1G
Hersteller: onsemi
Description: TRANS NPN 30V 1A SOT23-3
Power - Max: 310 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 8570 Stücke:
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28+0.77 EUR
41+0.52 EUR
100+0.35 EUR
500+0.27 EUR
1000+0.25 EUR
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NST30010MXV6T1G nst30010mxv6-d.pdf
NST30010MXV6T1G
Hersteller: onsemi
Description: TRANS 2PNP 30V 100MA SOT-563
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-563
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 PNP (Dual) Matched Pair
Mounting Type: Surface Mount
auf Bestellung 3627 Stücke:
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19+1.13 EUR
31+0.7 EUR
100+0.45 EUR
500+0.33 EUR
1000+0.3 EUR
2000+0.27 EUR
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NST3904DXV6T1G nst3904dxv6t1-d.pdf
NST3904DXV6T1G
Hersteller: onsemi
Description: TRANS 2NPN 40V 200MA SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 17102 Stücke:
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25+0.83 EUR
41+0.51 EUR
100+0.33 EUR
500+0.25 EUR
1000+0.21 EUR
2000+0.19 EUR
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NST3946DXV6T1G nst3946dxv6t1-d.pdf
NST3946DXV6T1G
Hersteller: onsemi
Description: TRANS NPN/PNP 40V 200MA SOT-563
Part Status: Active
Supplier Device Package: SOT-563
Frequency - Transition: 300MHz, 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 40V
Current - Collector (Ic) (Max): 200mA
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 12817 Stücke:
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24+0.88 EUR
39+0.54 EUR
100+0.35 EUR
500+0.25 EUR
1000+0.23 EUR
2000+0.2 EUR
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NST489AMT1G nst489amt1-d.pdf
NST489AMT1G
Hersteller: onsemi
Description: TRANS NPN 30V 2A 6-TSOP
Power - Max: 535 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: 6-TSOP
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 200mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 47974 Stücke:
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AnzahlPrivatkunde
13+1.65 EUR
21+1.04 EUR
100+0.68 EUR
500+0.52 EUR
1000+0.46 EUR
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NTB23N03RT4G ntb23n03r-d.pdf
NTB23N03RT4G
Hersteller: onsemi
Description: MOSFET N-CH 25V 23A D2PAK
Produkt ist nicht verfügbar
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NTD14N03RT4G description ntd14n03r-d.pdf
NTD14N03RT4G
Hersteller: onsemi
Description: MOSFET N-CH 25V 2.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.04W (Ta), 20.8W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 4121 Stücke:
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AnzahlPrivatkunde
10+2.14 EUR
16+1.34 EUR
100+0.88 EUR
500+0.69 EUR
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NTD20N06T4G ntd20n06-d.pdf
NTD20N06T4G
Hersteller: onsemi
Description: MOSFET N-CH 60V 20A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 10A, 10V
Power Dissipation (Max): 1.88W (Ta), 60W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 25 V
auf Bestellung 2600 Stücke:
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6+3.89 EUR
10+2.5 EUR
100+1.7 EUR
500+1.36 EUR
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NTD3055-150T4G ntd3055-150-d.pdf
NTD3055-150T4G
Hersteller: onsemi
Description: MOSFET N-CH 60V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta), 28.8W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
auf Bestellung 2831 Stücke:
Lieferzeit 10-14 Tag (e)
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8+2.83 EUR
12+1.77 EUR
50+1.32 EUR
100+1.18 EUR
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NTD40N03RT4G ntd40n03r-d.pdf
NTD40N03RT4G
Hersteller: onsemi
Description: MOSFET N-CH 25V 7.8A/32A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.78 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NTD4302T4G ntd4302-d.pdf
NTD4302T4G
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.4A/68A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 24 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.04W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 68A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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NTD78N03T4G ntd78n03-d.pdf
NTD78N03T4G
Hersteller: onsemi
Description: MOSFET N-CH 25V 11.4A/78A DPAK
Produkt ist nicht verfügbar
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NTF5P03T3G ntf5p03t3-d.pdf
NTF5P03T3G
Hersteller: onsemi
Description: MOSFET P-CH 30V 3.7A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223 (TO-261)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 4994 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+2.03 EUR
17+1.27 EUR
100+0.83 EUR
500+0.64 EUR
1000+0.58 EUR
2000+0.54 EUR
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NTF6P02T3G ntf6p02t3-d.pdf
NTF6P02T3G
Hersteller: onsemi
Description: MOSFET P-CH 20V 10A SOT223
Power Dissipation (Max): 8.3W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SOT-223 (TO-261)
Vgs(th) (Max) @ Id: 1V @ 250µA
auf Bestellung 47210 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.37 EUR
15+1.49 EUR
50+1.11 EUR
100+0.98 EUR
500+0.76 EUR
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NTGS3130NT1G ntgs3130n-d.pdf
NTGS3130NT1G
Hersteller: onsemi
Description: MOSFET N-CH 20V 4.23A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 600mW (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.23A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 846 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.43 EUR
14+1.52 EUR
100+1.01 EUR
500+0.79 EUR
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NTHD3102CT1G nthd3102c-d.pdf
NTHD3102CT1G
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 4A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A, 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 4.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
auf Bestellung 3 Stücke:
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NTHD4102PT1G nthd4102p-d.pdf
NTHD4102PT1G
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
auf Bestellung 11882 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.06 EUR
11+1.94 EUR
100+1.3 EUR
500+1.01 EUR
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NTHD4P02FT1G NTHD4P02F-D.PDF
NTHD4P02FT1G
Hersteller: onsemi
Description: MOSFET P-CH 20V 2.2A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tj)
Rds On (Max) @ Id, Vgs: 155mOhm @ 2.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
auf Bestellung 1720 Stücke:
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AnzahlPrivatkunde
6+3.92 EUR
10+2.51 EUR
100+1.7 EUR
500+1.36 EUR
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NTHS4101PT1G nths4101p-d.pdf
NTHS4101PT1G
Hersteller: onsemi
Description: MOSFET P-CH 20V 4.8A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tj)
Rds On (Max) @ Id, Vgs: 34mOhm @ 4.8A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 16 V
auf Bestellung 7781 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.06 EUR
11+1.94 EUR
100+1.3 EUR
500+1.01 EUR
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NTHS5404T1G nths5404t1-d.pdf
NTHS5404T1G
Hersteller: onsemi
Description: MOSFET N-CH 20V 5.2A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.2A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Produkt ist nicht verfügbar
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NTHS5441T1G nths5441t1-d.pdf
NTHS5441T1G
Hersteller: onsemi
Description: MOSFET P-CH 20V 3.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 3.9A, 4.5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 5 V
Produkt ist nicht verfügbar
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NTJD4158CT1G ntjd4158c-d.pdf
NTJD4158CT1G
Hersteller: onsemi
Description: MOSFET N/P-CH 30V/20V 0.25A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 250mA, 880mA
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-88/SC70-6/SOT-363
auf Bestellung 30265 Stücke:
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26+0.82 EUR
42+0.5 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
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NTJS4160NT1G ntjs4160n-d.pdf
NTJS4160NT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 1.8A SC88/SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.75 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 300mW (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Produkt ist nicht verfügbar
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NTLJD3115PT1G ntljd3115p-d.pdf
NTLJD3115PT1G
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.3A 6WDFN
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 710mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
auf Bestellung 5010 Stücke:
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11+1.93 EUR
18+1.2 EUR
100+0.79 EUR
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NTLJD3119CTBG ntljd3119c-d.pdf
NTLJD3119CTBG
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 2.6A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
auf Bestellung 12953 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.45 EUR
14+1.54 EUR
100+1.01 EUR
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NTLJF3117PT1G ntljf3117p-d.pdf
NTLJF3117PT1G
Hersteller: onsemi
Description: MOSFET P-CH 20V 2.3A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 531 pF @ 10 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.51 EUR
23+0.94 EUR
50+0.68 EUR
100+0.61 EUR
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NTLJF4156NT1G ntljf4156n-d.pdf
NTLJF4156NT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 2.5A 6WDFN
Power Dissipation (Max): 710mW (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
auf Bestellung 12053 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.27 EUR
20+1.08 EUR
100+0.75 EUR
500+0.6 EUR
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NTLJS4114NT1G ntljs4114n-d.pdf
NTLJS4114NT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 3.6A 6WDFN
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-WDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 1023 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9+2.56 EUR
13+1.62 EUR
100+1.07 EUR
500+0.83 EUR
1000+0.76 EUR
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NTMD4N03R2G ntmd4n03r2-d.pdf
NTMD4N03R2G
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 4A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 14404 Stücke:
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AnzahlPrivatkunde
10+2.24 EUR
15+1.4 EUR
100+0.93 EUR
500+0.71 EUR
1000+0.65 EUR
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NTMFS4122NT1G ntmfs4122n-d.pdf
NTMFS4122NT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 9.1A 5DFN
Produkt ist nicht verfügbar
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NTMFS4744NT1G ntmfs4744n-d.pdf
NTMFS4744NT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 7A 5DFN
Produkt ist nicht verfügbar
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NTMS10P02R2G ntms10p02r2-d.pdf
NTMS10P02R2G
Hersteller: onsemi
Description: MOSFET P-CH 20V 8.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 5595 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.06 EUR
10+2.59 EUR
50+1.96 EUR
100+1.75 EUR
500+1.39 EUR
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NTMS4107NR2G ntms4107n-d.pdf
NTMS4107NR2G
Hersteller: onsemi
Description: MOSFET N-CH 30V 11A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 930mW (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NTMS5P02R2G ntms5p02r2-d.pdf
NTMS5P02R2G
Hersteller: onsemi
Description: MOSFET P-CH 20V 3.95A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Power Dissipation (Max): 790mW (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2422 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
11+1.95 EUR
13+1.74 EUR
100+1.36 EUR
500+1.12 EUR
1000+0.88 EUR
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NTR4501NT1 ntr4501n-d.pdf
NTR4501NT1
Hersteller: onsemi
Description: MOSFET N-CH 20V 3.2A SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Part Status: Obsolete
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NTS4409NT1G nts4409n-d.pdf
NTS4409NT1G
Hersteller: onsemi
Description: MOSFET N-CH 25V 700MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 350mOhm @ 600mA, 4.5V
Power Dissipation (Max): 280mW (Tj)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-3 (SOT323)
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.15 EUR
30+0.7 EUR
50+0.51 EUR
100+0.45 EUR
500+0.35 EUR
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NUD4011DR2G nud4011-d.pdf
NUD4011DR2G
Hersteller: onsemi
Description: IC LED DRVR LIN PWM 70MA 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 198V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Applications: Lighting
Current - Output / Channel: 70mA
Supplier Device Package: 8-SOIC
Dimming: PWM
Voltage - Supply (Max): 200V
Part Status: Active
Grade: Automotive
Produkt ist nicht verfügbar
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NUF2042XV6T1G nuf2030xv6-d.pdf
NUF2042XV6T1G
Hersteller: onsemi
Description: FILTER RC(PI) 22 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -55°C ~ 125°C
Values: R = 22Ohms, C = 42pF (Total)
Height: 0.024" (0.60mm)
Filter Order: 2nd
Applications: USB
Technology: RC (Pi)
Resistance - Channel (Ohms): 22
ESD Protection: Yes
Part Status: Active
Number of Channels: 2
auf Bestellung 60268 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
25+0.83 EUR
31+0.68 EUR
34+0.63 EUR
50+0.58 EUR
100+0.55 EUR
250+0.51 EUR
500+0.48 EUR
1000+0.45 EUR
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NUF2114MNT1G nuf2114-d.pdf
NUF2114MNT1G
Hersteller: onsemi
Description: FILTR RC(PI) 9 OHMS/60PF ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 9Ohms, C = 60pF
Height: 0.039" (1.00mm)
Attenuation Value: -30dB @ 900MHz ~ 3GHz
Filter Order: 2nd
Applications: Audio
Technology: RC (Pi)
Center / Cutoff Frequency: 50MHz (Cutoff)
Resistance - Channel (Ohms): 9
ESD Protection: Yes
Part Status: Active
Number of Channels: 2
auf Bestellung 26091 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
14+1.52 EUR
17+1.24 EUR
25+1.14 EUR
50+1.07 EUR
100+1.01 EUR
250+0.93 EUR
500+0.88 EUR
1000+0.82 EUR
Mindestbestellmenge: 14 Stücke
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NUF2116MNT1G nuf2116mn-d.pdf
NUF2116MNT1G
Hersteller: onsemi
Description: FILTER RC(PI) 64 OHM/50PF SMD
Number of Channels: 2
ESD Protection: Yes
Resistance - Channel (Ohms): 64
Center / Cutoff Frequency: 55MHz (Cutoff)
Technology: RC (Pi)
Applications: Audio
Filter Order: 2nd
Attenuation Value: -35dB @ 800MHz ~ 3GHz
Height: 0.039" (1.00mm)
Values: R = 64Ohms, C = 50pF
Operating Temperature: -40°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm)
Package / Case: 8-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NUF2230XV6T1G nuf2230xv6-d.pdf
NUF2230XV6T1G
Hersteller: onsemi
Description: FILTER RC(PI) 100 OHM/16PF SMD
Number of Channels: 2
ESD Protection: Yes
Resistance - Channel (Ohms): 100
Center / Cutoff Frequency: 125MHz (Cutoff)
Technology: RC (Pi)
Applications: Data Lines for Mobile Devices
Filter Order: 2nd
Attenuation Value: -30dB @ 800MHz ~ 900MHz
Height: 0.024" (0.60mm)
Values: R = 100Ohms, C = 16pF
Operating Temperature: -40°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.047" W (1.60mm x 1.20mm)
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 6716 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
44+0.48 EUR
46+0.46 EUR
50+0.44 EUR
100+0.42 EUR
250+0.36 EUR
500+0.27 EUR
1000+0.26 EUR
Mindestbestellmenge: 44 Stücke
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NUF4402MNT1G nuf4402mn-d.pdf
NUF4402MNT1G
Hersteller: onsemi
Description: FILTER RC(PI) 100 OHM/12PF SMD
Number of Channels: 4
ESD Protection: Yes
Resistance - Channel (Ohms): 100
Center / Cutoff Frequency: 151MHz (Cutoff)
Technology: RC (Pi)
Applications: Data Lines for Mobile Devices
Filter Order: 2nd
Attenuation Value: -25dB @ 800MHz ~ 3GHz
Height: 0.039" (1.00mm)
Values: R = 100Ohms, C = 12pF
Operating Temperature: -40°C ~ 85°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.063" L x 0.063" W (1.60mm x 1.60mm)
Package / Case: 8-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 21715 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
22+0.96 EUR
27+0.79 EUR
50+0.7 EUR
100+0.64 EUR
250+0.61 EUR
500+0.55 EUR
1000+0.51 EUR
Mindestbestellmenge: 22 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NUF6401MNT1G nuf6401-d.pdf
NUF6401MNT1G
Hersteller: onsemi
Description: FILTER RC(PI) 100 OHMS ESD SMD
Operating Temperature: -45°C ~ 105°C
Type: Low Pass
Mounting Type: Surface Mount
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Package / Case: 12-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Channels: 6
Part Status: Active
ESD Protection: Yes
Resistance - Channel (Ohms): 100
Center / Cutoff Frequency: 110MHz (Cutoff)
Technology: RC (Pi)
Applications: Data Lines for Mobile Devices
Filter Order: 2nd
Attenuation Value: -30dB @ 800MHz ~ 3GHz
Height: 0.039" (1.00mm)
Values: R = 100Ohms, C = 17pF
auf Bestellung 4300 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
29+0.74 EUR
35+0.6 EUR
38+0.55 EUR
50+0.52 EUR
100+0.49 EUR
250+0.45 EUR
500+0.43 EUR
1000+0.39 EUR
Mindestbestellmenge: 29 Stücke
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