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PJA3431_R1_00001 PJA3431_R1_00001 Panjit International Inc. PJA3431.pdf Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 325mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
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67+0.27 EUR
107+0.16 EUR
500+0.12 EUR
1000+0.11 EUR
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PJS6809_S1_00001 PJS6809_S1_00001 Panjit International Inc. PJS6809.pdf Description: MOSFET 2P-CH 30V 2.6A SOT23-6
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 396pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
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PJS6809_S1_00001 PJS6809_S1_00001 Panjit International Inc. PJS6809.pdf Description: MOSFET 2P-CH 30V 2.6A SOT23-6
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 396pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
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PJS6421-AU_S1_000A1 PJS6421-AU_S1_000A1 Panjit International Inc. PJS6421-AU.pdf Description: 20V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
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PJS6421-AU_S1_000A1 PJS6421-AU_S1_000A1 Panjit International Inc. PJS6421-AU.pdf Description: 20V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
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PJS6413_S1_00001 Panjit International Inc. Description: 20V P-CHANNEL ENHANCEMENT MODE M
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PJS6413_S1_00001 Panjit International Inc. Description: 20V P-CHANNEL ENHANCEMENT MODE M
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PJS6839_S1_00001 PJS6839_S1_00001 Panjit International Inc. PJS6839.pdf Description: MOSFET 2P-CH 60V 0.3A SOT23-6
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 51pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
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PJS6839_S1_00001 PJS6839_S1_00001 Panjit International Inc. PJS6839.pdf Description: MOSFET 2P-CH 60V 0.3A SOT23-6
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 51pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
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PJS6421_S1_00001 PJS6421_S1_00001 Panjit International Inc. PJS6421.pdf Description: 20V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
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PJS6421_S1_00001 PJS6421_S1_00001 Panjit International Inc. PJS6421.pdf Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
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PCDB1065G1_T0_00001 Panjit International Inc. Description: 650V SIC SCHOTTKY BARRIER DIODE
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PCDB1065G1_T0_00001 Panjit International Inc. Description: 650V SIC SCHOTTKY BARRIER DIODE
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BD650CS_L2_00001 BD650CS_L2_00001 Panjit International Inc. BD640CS_SERIES.pdf Description: DIODE ARRAY SCHOTT 50V 6A TO-252
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
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BD650CS_L2_00001 BD650CS_L2_00001 Panjit International Inc. BD640CS_SERIES.pdf Description: DIODE ARRAY SCHOTT 50V 6A TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
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BD650CS_S2_00001 BD650CS_S2_00001 Panjit International Inc. BD640CS_SERIES.pdf Description: DIODE ARRAY SCHOTT 50V 6A TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-252
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BD650CS_S2_00001 BD650CS_S2_00001 Panjit International Inc. BD640CS_SERIES.pdf Description: DIODE ARRAY SCHOTT 50V 6A TO-252
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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ER1A_R1_00001 Panjit International Inc. Description: SURFACE MOUNT SUPER FAST RECOVER
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ER1A_R1_00001 Panjit International Inc. Description: SURFACE MOUNT SUPER FAST RECOVER
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ER1AF_R1_00001 ER1AF_R1_00001 Panjit International Inc. ER1AF_SERIES.pdf Description: DIODE GEN PURP 50V 1A SMBF
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMBF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Tape & Reel (TR)
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ER1AF_R1_00001 ER1AF_R1_00001 Panjit International Inc. ER1AF_SERIES.pdf Description: DIODE GEN PURP 50V 1A SMBF
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMBF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
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ER1AAFC_R1_00001 ER1AAFC_R1_00001 Panjit International Inc. ER1AAFC_SERIES.pdf Description: DIODE GEN PURP 50V 1A SMAF-C
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMAF-C
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
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ER1AAFC_R1_00001 ER1AAFC_R1_00001 Panjit International Inc. ER1AAFC_SERIES.pdf Description: DIODE GEN PURP 50V 1A SMAF-C
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMAF-C
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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GS1AWG_R1_00001 GS1AWG_R1_00001 Panjit International Inc. GS1AWG_SERIES.pdf Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
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GS1AWG_R1_00001 GS1AWG_R1_00001 Panjit International Inc. GS1AWG_SERIES.pdf Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
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118+0.15 EUR
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500+0.067 EUR
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PJMF990N65EC_T0_00001 PJMF990N65EC_T0_00001 Panjit International Inc. PJMF990N65EC.pdf Description: 650V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V
Power Dissipation (Max): 22.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
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500+0.65 EUR
1000+0.59 EUR
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SD830YS_L2_00001 SD830YS_L2_00001 Panjit International Inc. SD820YS_SERIES.pdf Description: DIODE SCHOTTKY 30V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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SD830YS_L2_00001 SD830YS_L2_00001 Panjit International Inc. SD820YS_SERIES.pdf Description: DIODE SCHOTTKY 30V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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SD830S_L2_00001 SD830S_L2_00001 Panjit International Inc. SD820S_SERIES.pdf Description: DIODE SCHOTTKY 30V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Produkt ist nicht verfügbar
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SD830S_L2_00001 SD830S_L2_00001 Panjit International Inc. SD820S_SERIES.pdf Description: DIODE SCHOTTKY 30V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.37 EUR
15+1.19 EUR
100+0.82 EUR
500+0.69 EUR
1000+0.59 EUR
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PZD22B12C-AU_R1_000A1 PZD22B12C-AU_R1_000A1 Panjit International Inc. PZD22B2V4C-AU_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PZD22B12C-AU_R1_000A1 PZD22B12C-AU_R1_000A1 Panjit International Inc. PZD22B2V4C-AU_SERIES.pdf Description: SILICON ZENER DIODE
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Qualification: AEC-Q101
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
73+0.24 EUR
142+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 50 Stücke
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5KP12CA_R2_00001 5KP12CA_R2_00001 Panjit International Inc. 5KP_SERIES.pdf Description: GLASS PASSIVATED JUNCTION TRANSI
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 19.9V
Voltage - Breakdown (Min): 13.3V
Bidirectional Channels: 1
Supplier Device Package: P600
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 251A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
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5KP12CA_R2_00001 5KP12CA_R2_00001 Panjit International Inc. 5KP_SERIES.pdf Description: GLASS PASSIVATED JUNCTION TRANSI
Voltage - Breakdown (Min): 13.3V
Bidirectional Channels: 1
Supplier Device Package: P600
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 251A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 19.9V
Produkt ist nicht verfügbar
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BZT52-B4V3_R1_00001 BZT52-B4V3_R1_00001 Panjit International Inc. BZT52-B2V4S_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2.09%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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BZT52-B4V3_R1_00001 BZT52-B4V3_R1_00001 Panjit International Inc. BZT52-B2V4S_SERIES.pdf Description: SURFACE MOUNT SILICON ZENER DIOD
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2.09%
Packaging: Cut Tape (CT)
auf Bestellung 2890 Stücke:
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48+0.37 EUR
52+0.34 EUR
100+0.19 EUR
500+0.11 EUR
1000+0.078 EUR
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BZT52-B4V3S_R1_00001 BZT52-B4V3S_R1_00001 Panjit International Inc. Description: SURFACE MOUNT SILICON ZENER DIOD
auf Bestellung 5000 Stücke:
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5000+0.065 EUR
Mindestbestellmenge: 5000 Stücke
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BZT52-B4V3S_R1_00001 BZT52-B4V3S_R1_00001 Panjit International Inc. Description: SURFACE MOUNT SILICON ZENER DIOD
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
51+0.35 EUR
100+0.19 EUR
500+0.12 EUR
1000+0.083 EUR
2000+0.075 EUR
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BZT52-B4V3-AU_R1_000A1 BZT52-B4V3-AU_R1_000A1 Panjit International Inc. Description: SURFACE MOUNT SILICON ZENER DIOD
Produkt ist nicht verfügbar
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BZT52-B4V3-AU_R1_000A1 BZT52-B4V3-AU_R1_000A1 Panjit International Inc. Description: SURFACE MOUNT SILICON ZENER DIOD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZT52-B4V3S-AU_R1_000A1 BZT52-B4V3S-AU_R1_000A1 Panjit International Inc. Description: SURFACE MOUNT SILICON ZENER DIOD
Produkt ist nicht verfügbar
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BZT52-B4V3S-AU_R1_000A1 BZT52-B4V3S-AU_R1_000A1 Panjit International Inc. Description: SURFACE MOUNT SILICON ZENER DIOD
Produkt ist nicht verfügbar
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P6SMBJ7.0A_R1_00001 P6SMBJ7.0A_R1_00001 Panjit International Inc. P6SMBJ_SERIES.pdf Description: TVS DIODE 7VWM 12VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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P6SMBJ7.0A_R1_00001 P6SMBJ7.0A_R1_00001 Panjit International Inc. P6SMBJ_SERIES.pdf Description: TVS DIODE 7VWM 12VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 634 Stücke:
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44+0.4 EUR
100+0.25 EUR
Mindestbestellmenge: 27 Stücke
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1.5KE30CAS_AY_00001 1.5KE30CAS_AY_00001 Panjit International Inc. Description: TVS 1500W 30V BIDIR DO-201AE
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Bidirectional Channels: 1
Supplier Device Package: DO-201AE
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 36A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AE, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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PG2010R_R2_00001 PG2010R_R2_00001 Panjit International Inc. PG200_SERIES.pdf Description: DIODE STANDARD 1000V 2A DO15
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 60000 Stücke
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PG2010R_R2_00001 PG2010R_R2_00001 Panjit International Inc. PG200_SERIES.pdf Description: DIODE STANDARD 1000V 2A DO15
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PG2010_R2_00001 PG2010_R2_00001 Panjit International Inc. PG200_SERIES.pdf Description: DIODE GEN PURP 1KV 2A DO15
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Produkt ist nicht verfügbar
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PG2010_R2_00001 PG2010_R2_00001 Panjit International Inc. PG200_SERIES.pdf Description: DIODE GEN PURP 1KV 2A DO15
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PJD35N06A_L2_00001 PJD35N06A_L2_00001 Panjit International Inc. PJx35N06A.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.1W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Produkt ist nicht verfügbar
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PJD35N06A_L2_00001 PJD35N06A_L2_00001 Panjit International Inc. PJx35N06A.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.1W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1040 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.25 EUR
23+0.79 EUR
100+0.53 EUR
500+0.42 EUR
1000+0.38 EUR
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PJD11N06A-AU_L2_000A1 PJD11N06A-AU_L2_000A1 Panjit International Inc. PJD11N06A-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJD11N06A-AU_L2_000A1 PJD11N06A-AU_L2_000A1 Panjit International Inc. PJD11N06A-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2952 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.2 EUR
24+0.74 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.33 EUR
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PJD11N06A_L2_00001 PJD11N06A_L2_00001 Panjit International Inc. PJD11N06A.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Produkt ist nicht verfügbar
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PJW5N06A_R2_00001 PJW5N06A_R2_00001 Panjit International Inc. PJW5N06A.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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PJW5N06A_R2_00001 PJW5N06A_R2_00001 Panjit International Inc. PJW5N06A.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PJD35N06A-AU_L2_000A1 PJD35N06A-AU_L2_000A1 Panjit International Inc. PJD35N06A-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJW5N06A-AU_R2_000A1 PJW5N06A-AU_R2_000A1 Panjit International Inc. PJW5N06A-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.72W (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJW5N06A-AU_R2_000A1 PJW5N06A-AU_R2_000A1 Panjit International Inc. PJW5N06A-AU.pdf Description: 60V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.72W (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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1.5SMC100AS_R1_00001 1.5SMC100AS_R1_00001 Panjit International Inc. 1.5SMC10AS_SERIES.pdf Description: TRANSIENT VOLTAGE SUPPRESSOR
Voltage - Clamping (Max) @ Ipp: 137V
Voltage - Breakdown (Min): 95V
Unidirectional Channels: 1
Supplier Device Package: SMC (DO-214AB)
Voltage - Reverse Standoff (Typ): 85.5V
Current - Peak Pulse (10/1000µs): 11A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Produkt ist nicht verfügbar
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PJA3431_R1_00001 PJA3431.pdf
PJA3431_R1_00001
Hersteller: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 325mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
auf Bestellung 5585 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
40+0.44 EUR
67+0.27 EUR
107+0.16 EUR
500+0.12 EUR
1000+0.11 EUR
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PJS6809_S1_00001 PJS6809.pdf
PJS6809_S1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2P-CH 30V 2.6A SOT23-6
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 396pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
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AnzahlPreis
3000+0.24 EUR
6000+0.22 EUR
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PJS6809_S1_00001 PJS6809.pdf
PJS6809_S1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2P-CH 30V 2.6A SOT23-6
Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 396pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.25W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 2.1V @ 250µA
auf Bestellung 6311 Stücke:
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AnzahlPreis
17+1.04 EUR
28+0.64 EUR
100+0.41 EUR
500+0.31 EUR
1000+0.28 EUR
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PJS6421-AU_S1_000A1 PJS6421-AU.pdf
PJS6421-AU_S1_000A1
Hersteller: Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJS6421-AU_S1_000A1 PJS6421-AU.pdf
PJS6421-AU_S1_000A1
Hersteller: Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 1799 Stücke:
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AnzahlPreis
27+0.67 EUR
31+0.58 EUR
100+0.44 EUR
500+0.34 EUR
1000+0.26 EUR
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PJS6413_S1_00001
Hersteller: Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
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PJS6413_S1_00001
Hersteller: Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
25+0.72 EUR
31+0.58 EUR
100+0.4 EUR
500+0.3 EUR
1000+0.22 EUR
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PJS6839_S1_00001 PJS6839.pdf
PJS6839_S1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2P-CH 60V 0.3A SOT23-6
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 51pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.14 EUR
Mindestbestellmenge: 3000 Stücke
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PJS6839_S1_00001 PJS6839.pdf
PJS6839_S1_00001
Hersteller: Panjit International Inc.
Description: MOSFET 2P-CH 60V 0.3A SOT23-6
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 51pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 500mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 5287 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
27+0.67 EUR
44+0.4 EUR
100+0.26 EUR
500+0.19 EUR
1000+0.17 EUR
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PJS6421_S1_00001 PJS6421.pdf
PJS6421_S1_00001
Hersteller: Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJS6421_S1_00001 PJS6421.pdf
PJS6421_S1_00001
Hersteller: Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 15 V
auf Bestellung 2127 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
23+0.79 EUR
29+0.61 EUR
100+0.39 EUR
500+0.31 EUR
1000+0.25 EUR
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PCDB1065G1_T0_00001
Hersteller: Panjit International Inc.
Description: 650V SIC SCHOTTKY BARRIER DIODE
Produkt ist nicht verfügbar
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PCDB1065G1_T0_00001
Hersteller: Panjit International Inc.
Description: 650V SIC SCHOTTKY BARRIER DIODE
Produkt ist nicht verfügbar
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BD650CS_L2_00001 BD640CS_SERIES.pdf
BD650CS_L2_00001
Hersteller: Panjit International Inc.
Description: DIODE ARRAY SCHOTT 50V 6A TO-252
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Produkt ist nicht verfügbar
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BD650CS_L2_00001 BD640CS_SERIES.pdf
BD650CS_L2_00001
Hersteller: Panjit International Inc.
Description: DIODE ARRAY SCHOTT 50V 6A TO-252
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Produkt ist nicht verfügbar
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BD650CS_S2_00001 BD640CS_SERIES.pdf
BD650CS_S2_00001
Hersteller: Panjit International Inc.
Description: DIODE ARRAY SCHOTT 50V 6A TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-252
Produkt ist nicht verfügbar
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BD650CS_S2_00001 BD640CS_SERIES.pdf
BD650CS_S2_00001
Hersteller: Panjit International Inc.
Description: DIODE ARRAY SCHOTT 50V 6A TO-252
Current - Reverse Leakage @ Vr: 50 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-252
Current - Average Rectified (Io) (per Diode): 6A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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ER1A_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SUPER FAST RECOVER
Produkt ist nicht verfügbar
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ER1A_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SUPER FAST RECOVER
Produkt ist nicht verfügbar
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ER1AF_R1_00001 ER1AF_SERIES.pdf
ER1AF_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE GEN PURP 50V 1A SMBF
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMBF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ER1AF_R1_00001 ER1AF_SERIES.pdf
ER1AF_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE GEN PURP 50V 1A SMBF
Package / Case: DO-221AA, SMB Flat Leads
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMBF
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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ER1AAFC_R1_00001 ER1AAFC_SERIES.pdf
ER1AAFC_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE GEN PURP 50V 1A SMAF-C
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMAF-C
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Produkt ist nicht verfügbar
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ER1AAFC_R1_00001 ER1AAFC_SERIES.pdf
ER1AAFC_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE GEN PURP 50V 1A SMAF-C
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMAF-C
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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GS1AWG_R1_00001 GS1AWG_SERIES.pdf
GS1AWG_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Produkt ist nicht verfügbar
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GS1AWG_R1_00001 GS1AWG_SERIES.pdf
GS1AWG_R1_00001
Hersteller: Panjit International Inc.
Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
auf Bestellung 1227 Stücke:
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AnzahlPreis
72+0.25 EUR
118+0.15 EUR
192+0.092 EUR
500+0.067 EUR
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PJMF990N65EC_T0_00001 PJMF990N65EC.pdf
PJMF990N65EC_T0_00001
Hersteller: Panjit International Inc.
Description: 650V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V
Power Dissipation (Max): 22.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+4.26 EUR
14+1.32 EUR
100+0.83 EUR
500+0.65 EUR
1000+0.59 EUR
2000+0.54 EUR
Mindestbestellmenge: 5 Stücke
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SD830YS_L2_00001 SD820YS_SERIES.pdf
SD830YS_L2_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Produkt ist nicht verfügbar
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SD830YS_L2_00001 SD820YS_SERIES.pdf
SD830YS_L2_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
auf Bestellung 191 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
10+1.95 EUR
15+1.23 EUR
100+0.81 EUR
Mindestbestellmenge: 10 Stücke
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SD830S_L2_00001 SD820S_SERIES.pdf
SD830S_L2_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SD830S_L2_00001 SD820S_SERIES.pdf
SD830S_L2_00001
Hersteller: Panjit International Inc.
Description: DIODE SCHOTTKY 30V 8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
auf Bestellung 2998 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
13+1.37 EUR
15+1.19 EUR
100+0.82 EUR
500+0.69 EUR
1000+0.59 EUR
Mindestbestellmenge: 13 Stücke
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PZD22B12C-AU_R1_000A1 PZD22B2V4C-AU_SERIES.pdf
PZD22B12C-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PZD22B12C-AU_R1_000A1 PZD22B2V4C-AU_SERIES.pdf
PZD22B12C-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: SILICON ZENER DIODE
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Qualification: AEC-Q101
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
50+0.35 EUR
73+0.24 EUR
142+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 50 Stücke
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5KP12CA_R2_00001 5KP_SERIES.pdf
5KP12CA_R2_00001
Hersteller: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 19.9V
Voltage - Breakdown (Min): 13.3V
Bidirectional Channels: 1
Supplier Device Package: P600
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 251A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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5KP12CA_R2_00001 5KP_SERIES.pdf
5KP12CA_R2_00001
Hersteller: Panjit International Inc.
Description: GLASS PASSIVATED JUNCTION TRANSI
Voltage - Breakdown (Min): 13.3V
Bidirectional Channels: 1
Supplier Device Package: P600
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 251A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: P600, Axial
Packaging: Cut Tape (CT)
Power Line Protection: No
Power - Peak Pulse: 5000W (5kW)
Voltage - Clamping (Max) @ Ipp: 19.9V
Produkt ist nicht verfügbar
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BZT52-B4V3_R1_00001 BZT52-B2V4S_SERIES.pdf
BZT52-B4V3_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2.09%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BZT52-B4V3_R1_00001 BZT52-B2V4S_SERIES.pdf
BZT52-B4V3_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 410 mW
Part Status: Active
Supplier Device Package: SOD-123
Impedance (Max) (Zzt): 95 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
Tolerance: ±2.09%
Packaging: Cut Tape (CT)
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
48+0.37 EUR
52+0.34 EUR
100+0.19 EUR
500+0.11 EUR
1000+0.078 EUR
Mindestbestellmenge: 48 Stücke
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BZT52-B4V3S_R1_00001
BZT52-B4V3S_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.065 EUR
Mindestbestellmenge: 5000 Stücke
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BZT52-B4V3S_R1_00001
BZT52-B4V3S_R1_00001
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
42+0.42 EUR
51+0.35 EUR
100+0.19 EUR
500+0.12 EUR
1000+0.083 EUR
2000+0.075 EUR
Mindestbestellmenge: 42 Stücke
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BZT52-B4V3-AU_R1_000A1
BZT52-B4V3-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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BZT52-B4V3-AU_R1_000A1
BZT52-B4V3-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BZT52-B4V3S-AU_R1_000A1
BZT52-B4V3S-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BZT52-B4V3S-AU_R1_000A1
BZT52-B4V3S-AU_R1_000A1
Hersteller: Panjit International Inc.
Description: SURFACE MOUNT SILICON ZENER DIOD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
P6SMBJ7.0A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ7.0A_R1_00001
Hersteller: Panjit International Inc.
Description: TVS DIODE 7VWM 12VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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P6SMBJ7.0A_R1_00001 P6SMBJ_SERIES.pdf
P6SMBJ7.0A_R1_00001
Hersteller: Panjit International Inc.
Description: TVS DIODE 7VWM 12VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
auf Bestellung 634 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
27+0.67 EUR
44+0.4 EUR
100+0.25 EUR
Mindestbestellmenge: 27 Stücke
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1.5KE30CAS_AY_00001
1.5KE30CAS_AY_00001
Hersteller: Panjit International Inc.
Description: TVS 1500W 30V BIDIR DO-201AE
Part Status: Obsolete
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 41.4V
Voltage - Breakdown (Min): 28.5V
Bidirectional Channels: 1
Supplier Device Package: DO-201AE
Voltage - Reverse Standoff (Typ): 25.6V
Current - Peak Pulse (10/1000µs): 36A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-201AE, Axial
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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PG2010R_R2_00001 PG200_SERIES.pdf
PG2010R_R2_00001
Hersteller: Panjit International Inc.
Description: DIODE STANDARD 1000V 2A DO15
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 60000 Stücke
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PG2010R_R2_00001 PG200_SERIES.pdf
PG2010R_R2_00001
Hersteller: Panjit International Inc.
Description: DIODE STANDARD 1000V 2A DO15
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PG2010_R2_00001 PG200_SERIES.pdf
PG2010_R2_00001
Hersteller: Panjit International Inc.
Description: DIODE GEN PURP 1KV 2A DO15
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 60000 Stücke
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PG2010_R2_00001 PG200_SERIES.pdf
PG2010_R2_00001
Hersteller: Panjit International Inc.
Description: DIODE GEN PURP 1KV 2A DO15
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-15
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PJD35N06A_L2_00001 PJx35N06A.pdf
PJD35N06A_L2_00001
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.1W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Produkt ist nicht verfügbar
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PJD35N06A_L2_00001 PJx35N06A.pdf
PJD35N06A_L2_00001
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.1W (Ta), 63W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1040 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
15+1.25 EUR
23+0.79 EUR
100+0.53 EUR
500+0.42 EUR
1000+0.38 EUR
Mindestbestellmenge: 15 Stücke
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PJD11N06A-AU_L2_000A1 PJD11N06A-AU.pdf
PJD11N06A-AU_L2_000A1
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PJD11N06A-AU_L2_000A1 PJD11N06A-AU.pdf
PJD11N06A-AU_L2_000A1
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 2.4W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2952 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
15+1.2 EUR
24+0.74 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.33 EUR
Mindestbestellmenge: 15 Stücke
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PJD11N06A_L2_00001 PJD11N06A.pdf
PJD11N06A_L2_00001
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Produkt ist nicht verfügbar
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PJW5N06A_R2_00001 PJW5N06A.pdf
PJW5N06A_R2_00001
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJW5N06A_R2_00001 PJW5N06A.pdf
PJW5N06A_R2_00001
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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PJD35N06A-AU_L2_000A1 PJD35N06A-AU.pdf
PJD35N06A-AU_L2_000A1
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.3W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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PJW5N06A-AU_R2_000A1 PJW5N06A-AU.pdf
PJW5N06A-AU_R2_000A1
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.72W (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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PJW5N06A-AU_R2_000A1 PJW5N06A-AU.pdf
PJW5N06A-AU_R2_000A1
Hersteller: Panjit International Inc.
Description: 60V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 509 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: SOT-223
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.72W (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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1.5SMC100AS_R1_00001 1.5SMC10AS_SERIES.pdf
1.5SMC100AS_R1_00001
Hersteller: Panjit International Inc.
Description: TRANSIENT VOLTAGE SUPPRESSOR
Voltage - Clamping (Max) @ Ipp: 137V
Voltage - Breakdown (Min): 95V
Unidirectional Channels: 1
Supplier Device Package: SMC (DO-214AB)
Voltage - Reverse Standoff (Typ): 85.5V
Current - Peak Pulse (10/1000µs): 11A
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Tape & Reel (TR)
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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