Produkte > PN JUNCTION SEMICONDUCTOR > Alle Produkte des Herstellers PN JUNCTION SEMICONDUCTOR (37) > Seite 1 nach 1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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P1H06300D8 | PN Junction Semiconductor |
 Description: GANFET N-CH 650V 10A DFN 8X8Drain to Source Voltage (Vdss): 650 V Vgs (Max): +10V, -20V Drive Voltage (Max Rds On, Min Rds On): 6V Part Status: Active Supplier Device Package: DFN8*8 Power Dissipation (Max): 55.5W Current - Continuous Drain (Id) @ 25°C: 10A FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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P3D06004G2 | PN Junction Semiconductor |
Description: DIODE SIL CARB 650V 14A TO263-2 Current - Reverse Leakage @ Vr: 20 µA @ 650 V Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263-2 Current - Average Rectified (Io): 14A Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Package / Case: TO-263-2 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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P3D06006G2 | PN Junction Semiconductor |
Description: DIODE SIL CARB 650V 21A TO263-2 Current - Reverse Leakage @ Vr: 30 µA @ 650 V Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263-2 Current - Average Rectified (Io): 21A Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Package / Case: TO-263-2 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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P3D06008E2 | PN Junction Semiconductor |
Description: DIODE SCHOTTKY 600V 8A TO252-2 |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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P3D06008F2 | PN Junction Semiconductor |
Description: DIODE SCHOTTKY 600V 8A TO220F-2 |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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P3D06008G2 | PN Junction Semiconductor |
Description: DIODE SCHOTTKY 600V 8A TO263-2 |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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P3D06008I2 | PN Junction Semiconductor |
Description: DIODE SCHOTTKY 600V 8A TO220I-2 |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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P3D06008T2 | PN Junction Semiconductor |
Description: DIODE SCHOTTKY 600V 8A TO220-2 |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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P3D06016GS | PN Junction Semiconductor |
Description: DIODE SCHOTTKY 600V 16A TO263S |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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P3D06020P3 | PN Junction Semiconductor |
Description: DIODE SCHOTTKY 600V 20A TO3PF-3 |
auf Bestellung 180 Stücke: Lieferzeit 10-14 Tag (e) |
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P3D06040K3 | PN Junction Semiconductor |
Description: DIODE SCHOTTKY 600V 40A TO247-3 |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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P3D12010G2 | PN Junction Semiconductor |
Description: DIODE SCHOTTKY 1200V 10A TO263-2 |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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P3D12010K2 | PN Junction Semiconductor |
Description: DIODE SCHOTTKY 1200V 10A TO247-2 |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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P3D12010K3 | PN Junction Semiconductor |
Description: DIODE SCHOTTKY 1200V 10A TO247-3 |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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P3D12010T2 | PN Junction Semiconductor |
Description: DIODE SCHOTTKY 1200V 10A TO220-2 |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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P3D12015K2 | PN Junction Semiconductor |
Description: DIODE SCHOTTKY 1200V 15A TO247-2 |
auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
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P3D12015T2 | PN Junction Semiconductor |
Description: DIODE SCHOTTKY 1200V 15A TO220-2 |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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P3D12040K2 | PN Junction Semiconductor |
Description: DIODE SCHOTTKY 1200V 40A TO247-2 |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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P3D12040K3 | PN Junction Semiconductor |
Description: DIODE SCHOTTKY 1200V 40A TO247-3 |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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P3M06040K3 | PN Junction Semiconductor |
Description: SICFET N-CH 650V 68A TO247-3 |
auf Bestellung 138 Stücke: Lieferzeit 10-14 Tag (e) |
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P3M06040K4 | PN Junction Semiconductor |
Description: SICFET N-CH 650V 68A TO247-4 |
auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
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P3M06300D8 | PN Junction Semiconductor |
Description: SICFET N-CH 650V 9A DFN8*8 |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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P3M06300T3 | PN Junction Semiconductor |
Description: SICFET N-CH 650V 9A TO-220-3 |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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P3M12017K4 | PN Junction Semiconductor |
Description: SICFET N-CH 1200V 151A TO-247-4 Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +25V, -10V Drive Voltage (Max Rds On, Min Rds On): 15V Part Status: Active Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 2.5V @ 75mA (Typ) Power Dissipation (Max): 789W Rds On (Max) @ Id, Vgs: 24mOhm @ 75A, 15V Current - Continuous Drain (Id) @ 25°C: 151A FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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P3M12025K3 | PN Junction Semiconductor |
Description: SICFET N-CH 1200V 113A TO-247-3 Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +21V, -10V Drive Voltage (Max Rds On, Min Rds On): 15V Part Status: Active Supplier Device Package: TO-247-3L Vgs(th) (Max) @ Id: 2.4V @ 17.7mA (Typ) Power Dissipation (Max): 524W Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 15V Current - Continuous Drain (Id) @ 25°C: 113A FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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P3M12025K4 | PN Junction Semiconductor |
Description: SICFET N-CH 1200V 112A TO-247-4 Packaging: Tube Vgs(th) (Max) @ Id: 2.2V @ 50mA (Typ) Power Dissipation (Max): 577W Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 15V Current - Continuous Drain (Id) @ 25°C: 112A FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +19V, -8V Drive Voltage (Max Rds On, Min Rds On): 15V Part Status: Active Supplier Device Package: TO-247-4L |
auf Bestellung 30 Stücke: Lieferzeit 10-14 Tag (e) |
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P3M12040G7 | PN Junction Semiconductor |
Description: SICFET N-CH 1200V 69A TO-263-7 Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +19V, -8V Drive Voltage (Max Rds On, Min Rds On): 15V Part Status: Active Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 2.2V @ 40mA (Typ) Power Dissipation (Max): 357W Rds On (Max) @ Id, Vgs: 53mOhm @ 40A, 15V Current - Continuous Drain (Id) @ 25°C: 69A FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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P3M12040K3 | PN Junction Semiconductor |
Description: SICFET N-CH 1200V 63A TO-247-3 Package / Case: TO-247-3 Packaging: Tube Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +21V, -8V Drive Voltage (Max Rds On, Min Rds On): 15V Part Status: Active Supplier Device Package: TO-247-3L Vgs(th) (Max) @ Id: 2.2V @ 40mA (Typ) Power Dissipation (Max): 349W Rds On (Max) @ Id, Vgs: 48mOhm @ 40A, 15V Current - Continuous Drain (Id) @ 25°C: 63A FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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P3M12080G7 | PN Junction Semiconductor |
Description: SICFET N-CH 1200V 32A TO-263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A Rds On (Max) @ Id, Vgs: 96mOhm @ 20A, 15V Power Dissipation (Max): 136W Vgs(th) (Max) @ Id: 2.2V @ 30mA (Typ) Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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P3M12080K3 | PN Junction Semiconductor |
Description: SICFET N-CH 1200V 47A TO-247-3 Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +21V, -8V Drive Voltage (Max Rds On, Min Rds On): 15V Part Status: Active Supplier Device Package: TO-247-3L Vgs(th) (Max) @ Id: 2.4V @ 5mA (Typ) Power Dissipation (Max): 221W Rds On (Max) @ Id, Vgs: 96mOhm @ 20A, 15V Current - Continuous Drain (Id) @ 25°C: 47A FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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P3M12080K4 | PN Junction Semiconductor |
Description: SICFET N-CH 1200V 47A TO-247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A Rds On (Max) @ Id, Vgs: 96mOhm @ 20A, 15V Power Dissipation (Max): 221W Vgs(th) (Max) @ Id: 2.4V @ 5mA (Typ) Supplier Device Package: TO-247-4L Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +21V, -8V Drain to Source Voltage (Vdss): 1200 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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P3M12160K3 | PN Junction Semiconductor |
Description: SICFET N-CH 1200V 19A TO-247-3 Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +21V, -8V Drive Voltage (Max Rds On, Min Rds On): 15V Part Status: Active Supplier Device Package: TO-247-3L Vgs(th) (Max) @ Id: 2.4V @ 2.5mA (Typ) Power Dissipation (Max): 110W Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V Current - Continuous Drain (Id) @ 25°C: 19A FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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P3M12160K4 | PN Junction Semiconductor |
Description: SICFET N-CH 1200V 19A TO-247-4 Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +21V, -8V Drive Voltage (Max Rds On, Min Rds On): 15V Part Status: Active Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 2.4V @ 2.5mA (Typ) Power Dissipation (Max): 110W Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V Current - Continuous Drain (Id) @ 25°C: 19A FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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P3M171K0T3 | PN Junction Semiconductor |
Description: SICFET N-CH 1700V 6A TO-220-3 |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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P3M173K0T3 | PN Junction Semiconductor |
Description: SICFET N-CH 1700V 4A TO-220-3 |
auf Bestellung 275 Stücke: Lieferzeit 10-14 Tag (e) |
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P6D12002E2 | PN Junction Semiconductor |
Description: DIODE SCHOTTKY 1200V 2A TO252-2 |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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PAA12400BM3 | PN Junction Semiconductor |
Description: 1200V HALF-BRIDGE Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray Part Status: Active Supplier Device Package: Module Vgs(th) (Max) @ Id: 5V @ 100mA Rds On (Max) @ Id, Vgs: 7.3mOhm @ 300A, 20V Input Capacitance (Ciss) (Max) @ Vds: 29.5pF @ 1000V Current - Continuous Drain (Id) @ 25°C: 350A Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Half Bridge) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| P1H06300D8 |
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Hersteller: PN Junction Semiconductor
Description: GANFET N-CH 650V 10A DFN 8X8
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V
Part Status: Active
Supplier Device Package: DFN8*8
Power Dissipation (Max): 55.5W
Current - Continuous Drain (Id) @ 25°C: 10A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Description: GANFET N-CH 650V 10A DFN 8X8
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +10V, -20V
Drive Voltage (Max Rds On, Min Rds On): 6V
Part Status: Active
Supplier Device Package: DFN8*8
Power Dissipation (Max): 55.5W
Current - Continuous Drain (Id) @ 25°C: 10A
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P3D06004G2 |
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Hersteller: PN Junction Semiconductor
Description: DIODE SIL CARB 650V 14A TO263-2
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 14A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Package / Case: TO-263-2
Packaging: Tape & Reel (TR)
Description: DIODE SIL CARB 650V 14A TO263-2
Current - Reverse Leakage @ Vr: 20 µA @ 650 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 14A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Package / Case: TO-263-2
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P3D06006G2 |
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Hersteller: PN Junction Semiconductor
Description: DIODE SIL CARB 650V 21A TO263-2
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 21A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Package / Case: TO-263-2
Packaging: Tape & Reel (TR)
Description: DIODE SIL CARB 650V 21A TO263-2
Current - Reverse Leakage @ Vr: 30 µA @ 650 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 21A
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Package / Case: TO-263-2
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P3D06008E2 |
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Hersteller: PN Junction Semiconductor
Description: DIODE SCHOTTKY 600V 8A TO252-2
Description: DIODE SCHOTTKY 600V 8A TO252-2
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.33 EUR |
| P3D06008F2 |
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Hersteller: PN Junction Semiconductor
Description: DIODE SCHOTTKY 600V 8A TO220F-2
Description: DIODE SCHOTTKY 600V 8A TO220F-2
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.33 EUR |
| P3D06008G2 |
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Hersteller: PN Junction Semiconductor
Description: DIODE SCHOTTKY 600V 8A TO263-2
Description: DIODE SCHOTTKY 600V 8A TO263-2
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.33 EUR |
| P3D06008I2 |
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Hersteller: PN Junction Semiconductor
Description: DIODE SCHOTTKY 600V 8A TO220I-2
Description: DIODE SCHOTTKY 600V 8A TO220I-2
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.33 EUR |
| P3D06008T2 |
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Hersteller: PN Junction Semiconductor
Description: DIODE SCHOTTKY 600V 8A TO220-2
Description: DIODE SCHOTTKY 600V 8A TO220-2
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.33 EUR |
| P3D06016GS |
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Hersteller: PN Junction Semiconductor
Description: DIODE SCHOTTKY 600V 16A TO263S
Description: DIODE SCHOTTKY 600V 16A TO263S
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.98 EUR |
| 11+ | 14.43 EUR |
| P3D06020P3 |
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Hersteller: PN Junction Semiconductor
Description: DIODE SCHOTTKY 600V 20A TO3PF-3
Description: DIODE SCHOTTKY 600V 20A TO3PF-3
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.16 EUR |
| 11+ | 16.41 EUR |
| 101+ | 13.58 EUR |
| P3D06040K3 |
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Hersteller: PN Junction Semiconductor
Description: DIODE SCHOTTKY 600V 40A TO247-3
Description: DIODE SCHOTTKY 600V 40A TO247-3
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.42 EUR |
| 11+ | 25.57 EUR |
| P3D12010G2 |
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Hersteller: PN Junction Semiconductor
Description: DIODE SCHOTTKY 1200V 10A TO263-2
Description: DIODE SCHOTTKY 1200V 10A TO263-2
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.83 EUR |
| 11+ | 12.5 EUR |
| P3D12010K2 |
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Hersteller: PN Junction Semiconductor
Description: DIODE SCHOTTKY 1200V 10A TO247-2
Description: DIODE SCHOTTKY 1200V 10A TO247-2
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.83 EUR |
| 11+ | 12.5 EUR |
| 101+ | 10.34 EUR |
| P3D12010K3 |
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Hersteller: PN Junction Semiconductor
Description: DIODE SCHOTTKY 1200V 10A TO247-3
Description: DIODE SCHOTTKY 1200V 10A TO247-3
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.83 EUR |
| 11+ | 12.5 EUR |
| P3D12010T2 |
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Hersteller: PN Junction Semiconductor
Description: DIODE SCHOTTKY 1200V 10A TO220-2
Description: DIODE SCHOTTKY 1200V 10A TO220-2
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.83 EUR |
| 11+ | 12.5 EUR |
| P3D12015K2 |
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Hersteller: PN Junction Semiconductor
Description: DIODE SCHOTTKY 1200V 15A TO247-2
Description: DIODE SCHOTTKY 1200V 15A TO247-2
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.98 EUR |
| 11+ | 20.77 EUR |
| 101+ | 16.72 EUR |
| P3D12015T2 |
|
Hersteller: PN Junction Semiconductor
Description: DIODE SCHOTTKY 1200V 15A TO220-2
Description: DIODE SCHOTTKY 1200V 15A TO220-2
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.98 EUR |
| 11+ | 20.77 EUR |
| 101+ | 16.72 EUR |
| P3D12040K2 |
|
Hersteller: PN Junction Semiconductor
Description: DIODE SCHOTTKY 1200V 40A TO247-2
Description: DIODE SCHOTTKY 1200V 40A TO247-2
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 38.44 EUR |
| 11+ | 34.75 EUR |
| P3D12040K3 |
|
Hersteller: PN Junction Semiconductor
Description: DIODE SCHOTTKY 1200V 40A TO247-3
Description: DIODE SCHOTTKY 1200V 40A TO247-3
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 38.44 EUR |
| 11+ | 34.75 EUR |
| P3M06040K3 |
|
Hersteller: PN Junction Semiconductor
Description: SICFET N-CH 650V 68A TO247-3
Description: SICFET N-CH 650V 68A TO247-3
auf Bestellung 138 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.99 EUR |
| 11+ | 23.74 EUR |
| 101+ | 23.24 EUR |
| P3M06040K4 |
|
Hersteller: PN Junction Semiconductor
Description: SICFET N-CH 650V 68A TO247-4
Description: SICFET N-CH 650V 68A TO247-4
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.99 EUR |
| 11+ | 23.74 EUR |
| 101+ | 23.24 EUR |
| P3M06300D8 |
|
Hersteller: PN Junction Semiconductor
Description: SICFET N-CH 650V 9A DFN8*8
Description: SICFET N-CH 650V 9A DFN8*8
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.22 EUR |
| 11+ | 9.71 EUR |
| 101+ | 8.9 EUR |
| P3M06300T3 |
|
Hersteller: PN Junction Semiconductor
Description: SICFET N-CH 650V 9A TO-220-3
Description: SICFET N-CH 650V 9A TO-220-3
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.53 EUR |
| 11+ | 10 EUR |
| 101+ | 9.16 EUR |
| 1001+ | 7.9 EUR |
| 2000+ | 6.32 EUR |
| P3M12017K4 |
|
Hersteller: PN Junction Semiconductor
Description: SICFET N-CH 1200V 151A TO-247-4
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 2.5V @ 75mA (Typ)
Power Dissipation (Max): 789W
Rds On (Max) @ Id, Vgs: 24mOhm @ 75A, 15V
Current - Continuous Drain (Id) @ 25°C: 151A
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: SICFET N-CH 1200V 151A TO-247-4
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +25V, -10V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 2.5V @ 75mA (Typ)
Power Dissipation (Max): 789W
Rds On (Max) @ Id, Vgs: 24mOhm @ 75A, 15V
Current - Continuous Drain (Id) @ 25°C: 151A
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P3M12025K3 |
|
Hersteller: PN Junction Semiconductor
Description: SICFET N-CH 1200V 113A TO-247-3
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +21V, -10V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-3L
Vgs(th) (Max) @ Id: 2.4V @ 17.7mA (Typ)
Power Dissipation (Max): 524W
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 15V
Current - Continuous Drain (Id) @ 25°C: 113A
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: SICFET N-CH 1200V 113A TO-247-3
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +21V, -10V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-3L
Vgs(th) (Max) @ Id: 2.4V @ 17.7mA (Typ)
Power Dissipation (Max): 524W
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 15V
Current - Continuous Drain (Id) @ 25°C: 113A
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P3M12025K4 |
|
Hersteller: PN Junction Semiconductor
Description: SICFET N-CH 1200V 112A TO-247-4
Packaging: Tube
Vgs(th) (Max) @ Id: 2.2V @ 50mA (Typ)
Power Dissipation (Max): 577W
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 15V
Current - Continuous Drain (Id) @ 25°C: 112A
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-4L
Description: SICFET N-CH 1200V 112A TO-247-4
Packaging: Tube
Vgs(th) (Max) @ Id: 2.2V @ 50mA (Typ)
Power Dissipation (Max): 577W
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 15V
Current - Continuous Drain (Id) @ 25°C: 112A
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-4L
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 60.19 EUR |
| 11+ | 57.18 EUR |
| P3M12040G7 |
|
Hersteller: PN Junction Semiconductor
Description: SICFET N-CH 1200V 69A TO-263-7
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 2.2V @ 40mA (Typ)
Power Dissipation (Max): 357W
Rds On (Max) @ Id, Vgs: 53mOhm @ 40A, 15V
Current - Continuous Drain (Id) @ 25°C: 69A
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SICFET N-CH 1200V 69A TO-263-7
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 2.2V @ 40mA (Typ)
Power Dissipation (Max): 357W
Rds On (Max) @ Id, Vgs: 53mOhm @ 40A, 15V
Current - Continuous Drain (Id) @ 25°C: 69A
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P3M12040K3 |
|
Hersteller: PN Junction Semiconductor
Description: SICFET N-CH 1200V 63A TO-247-3
Package / Case: TO-247-3
Packaging: Tube
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +21V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-3L
Vgs(th) (Max) @ Id: 2.2V @ 40mA (Typ)
Power Dissipation (Max): 349W
Rds On (Max) @ Id, Vgs: 48mOhm @ 40A, 15V
Current - Continuous Drain (Id) @ 25°C: 63A
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Description: SICFET N-CH 1200V 63A TO-247-3
Package / Case: TO-247-3
Packaging: Tube
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +21V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-3L
Vgs(th) (Max) @ Id: 2.2V @ 40mA (Typ)
Power Dissipation (Max): 349W
Rds On (Max) @ Id, Vgs: 48mOhm @ 40A, 15V
Current - Continuous Drain (Id) @ 25°C: 63A
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P3M12080G7 |
|
Hersteller: PN Junction Semiconductor
Description: SICFET N-CH 1200V 32A TO-263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A
Rds On (Max) @ Id, Vgs: 96mOhm @ 20A, 15V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 2.2V @ 30mA (Typ)
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SICFET N-CH 1200V 32A TO-263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A
Rds On (Max) @ Id, Vgs: 96mOhm @ 20A, 15V
Power Dissipation (Max): 136W
Vgs(th) (Max) @ Id: 2.2V @ 30mA (Typ)
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P3M12080K3 |
|
Hersteller: PN Junction Semiconductor
Description: SICFET N-CH 1200V 47A TO-247-3
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +21V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-3L
Vgs(th) (Max) @ Id: 2.4V @ 5mA (Typ)
Power Dissipation (Max): 221W
Rds On (Max) @ Id, Vgs: 96mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 47A
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: SICFET N-CH 1200V 47A TO-247-3
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +21V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-3L
Vgs(th) (Max) @ Id: 2.4V @ 5mA (Typ)
Power Dissipation (Max): 221W
Rds On (Max) @ Id, Vgs: 96mOhm @ 20A, 15V
Current - Continuous Drain (Id) @ 25°C: 47A
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P3M12080K4 |
|
Hersteller: PN Junction Semiconductor
Description: SICFET N-CH 1200V 47A TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A
Rds On (Max) @ Id, Vgs: 96mOhm @ 20A, 15V
Power Dissipation (Max): 221W
Vgs(th) (Max) @ Id: 2.4V @ 5mA (Typ)
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +21V, -8V
Drain to Source Voltage (Vdss): 1200 V
Description: SICFET N-CH 1200V 47A TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A
Rds On (Max) @ Id, Vgs: 96mOhm @ 20A, 15V
Power Dissipation (Max): 221W
Vgs(th) (Max) @ Id: 2.4V @ 5mA (Typ)
Supplier Device Package: TO-247-4L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +21V, -8V
Drain to Source Voltage (Vdss): 1200 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P3M12160K3 |
|
Hersteller: PN Junction Semiconductor
Description: SICFET N-CH 1200V 19A TO-247-3
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +21V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-3L
Vgs(th) (Max) @ Id: 2.4V @ 2.5mA (Typ)
Power Dissipation (Max): 110W
Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 19A
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: SICFET N-CH 1200V 19A TO-247-3
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +21V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-3L
Vgs(th) (Max) @ Id: 2.4V @ 2.5mA (Typ)
Power Dissipation (Max): 110W
Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 19A
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P3M12160K4 |
|
Hersteller: PN Junction Semiconductor
Description: SICFET N-CH 1200V 19A TO-247-4
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +21V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 2.4V @ 2.5mA (Typ)
Power Dissipation (Max): 110W
Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 19A
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Description: SICFET N-CH 1200V 19A TO-247-4
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +21V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 2.4V @ 2.5mA (Typ)
Power Dissipation (Max): 110W
Rds On (Max) @ Id, Vgs: 192mOhm @ 10A, 15V
Current - Continuous Drain (Id) @ 25°C: 19A
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| P3M171K0T3 |
|
Hersteller: PN Junction Semiconductor
Description: SICFET N-CH 1700V 6A TO-220-3
Description: SICFET N-CH 1700V 6A TO-220-3
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.9 EUR |
| 11+ | 12.13 EUR |
| 101+ | 11.09 EUR |
| P3M173K0T3 |
|
Hersteller: PN Junction Semiconductor
Description: SICFET N-CH 1700V 4A TO-220-3
Description: SICFET N-CH 1700V 4A TO-220-3
auf Bestellung 275 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.75 EUR |
| 11+ | 10.09 EUR |
| 101+ | 9.02 EUR |
| P6D12002E2 |
|
Hersteller: PN Junction Semiconductor
Description: DIODE SCHOTTKY 1200V 2A TO252-2
Description: DIODE SCHOTTKY 1200V 2A TO252-2
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.43 EUR |
| PAA12400BM3 |
|
Hersteller: PN Junction Semiconductor
Description: 1200V HALF-BRIDGE
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 5V @ 100mA
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 300A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 29.5pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 350A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Description: 1200V HALF-BRIDGE
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Part Status: Active
Supplier Device Package: Module
Vgs(th) (Max) @ Id: 5V @ 100mA
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 300A, 20V
Input Capacitance (Ciss) (Max) @ Vds: 29.5pF @ 1000V
Current - Continuous Drain (Id) @ 25°C: 350A
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH