P3M12025K4 PN Junction Semiconductor

Description: SICFET N-CH 1200V 112A TO-247-4, Packaging: Tube, Vgs(th) (Max) @ Id: 2.2V @ 50mA (Typ), Power Dissipation (Max): 577W, Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 15V, Current - Continuous Drain (Id) @ 25°C: 112A, FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +19V, -8V, Drive Voltage (Max Rds On, Min Rds On): 15V, Part Status: Active, Supplier Device Package: TO-247-4L.