Транзистор польовий IPT059N15N3 Infineon
Hersteller: Infineon
Транз. Пол. MOSFET Si Mounting Style: SMD/SMT Package/Case: PG-HSOF-8 Number of Channels: 1 Channel Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 150 V Id - Continuous Drain Current: 155 A Rds On - Drain-Source Resistance: 5.9 Транз
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Technische Details Транзистор польовий IPT059N15N3 Infineon Infineon
Транз. Пол. MOSFET Si Mounting Style: SMD/SMT Package/Case: PG-HSOF-8 Number of Channels: 1 Channel Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 150 V Id - Continuous Drain Current: 155 A Rds On - Drain-Source Resistance: 5.9 Транз.

