03N06L Goford Semiconductor
Hersteller: Goford SemiconductorDescription: N60V,RD(MAX)<100M@10V,RD(MAX)<12
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 1.7W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.16 EUR |
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Technische Details 03N06L Goford Semiconductor
N-CH 60V 3A 100mOhm/MAX at 10V, 120mOhm/MAX at 4.5V, SOT-23-3L.
Weitere Produktangebote 03N06L nach Preis ab 0.05 EUR bis 0.81 EUR
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03N06L | Hersteller : Goford Semiconductor |
Description: N60V,RD(MAX)<100M@10V,RD(MAX)<12 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V Power Dissipation (Max): 1.7W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-23-3 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 30 V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 3330 Stücke: Lieferzeit 10-14 Tag (e) |
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| 03N06L | Hersteller : GOFORD Semiconductor |
N-CH 60V 3A 100mOhm/MAX at 10V, 120mOhm/MAX at 4.5V, SOT-23-3L |
auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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