Technische Details 1.5KE170CA_AY_00001 Panjit
Category: Bidirectional TVS THT diodes, Description: Diode: TVS; 162÷179V; 6.4A; bidirectional; DO201AE; Ammo Pack, Type of diode: TVS, Breakdown voltage: 162...179V, Semiconductor structure: bidirectional, Case: DO201AE, Mounting: THT, Kind of package: Ammo Pack, Peak pulse power dissipation: 1.5kW, Manufacturer series: 1.5KE, Leakage current: 1µA, Max. off-state voltage: 145V, Features of semiconductor devices: glass passivated, Max. forward impulse current: 6.4A.
Weitere Produktangebote 1.5KE170CA_AY_00001
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
1.5KE170CA-AY-00001 | Panjit |
 ESD Protection Diodes / TVS Diodes |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 1.5KE170CA_AY_00001 | PanJit Semiconductor |
Category: Bidirectional TVS THT diodes Description: Diode: TVS; 162÷179V; 6.4A; bidirectional; DO201AE; Ammo Pack Type of diode: TVS Breakdown voltage: 162...179V Semiconductor structure: bidirectional Case: DO201AE Mounting: THT Kind of package: Ammo Pack Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Leakage current: 1µA Max. off-state voltage: 145V Features of semiconductor devices: glass passivated Max. forward impulse current: 6.4A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1250 Stücke Im Einkaufswagen Stück im Wert von UAH |
| 1.5KE170CA-AY-00001 |
|
Hersteller: Panjit
ESD Protection Diodes / TVS Diodes
ESD Protection Diodes / TVS Diodes
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1.5KE170CA_AY_00001 |
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 162÷179V; 6.4A; bidirectional; DO201AE; Ammo Pack
Type of diode: TVS
Breakdown voltage: 162...179V
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Kind of package: Ammo Pack
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Leakage current: 1µA
Max. off-state voltage: 145V
Features of semiconductor devices: glass passivated
Max. forward impulse current: 6.4A
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 162÷179V; 6.4A; bidirectional; DO201AE; Ammo Pack
Type of diode: TVS
Breakdown voltage: 162...179V
Semiconductor structure: bidirectional
Case: DO201AE
Mounting: THT
Kind of package: Ammo Pack
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Leakage current: 1µA
Max. off-state voltage: 145V
Features of semiconductor devices: glass passivated
Max. forward impulse current: 6.4A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1250 Stücke
Im Einkaufswagen
Stück im Wert von UAH