10A07H EIC SEMICONDUCTOR INC.
Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 1KV 10A D6
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D6
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: D-6, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Part Status: Active
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Technische Details 10A07H EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 1KV 10A D6, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: D6, Current - Average Rectified (Io): 10A, Capacitance @ Vr, F: 80pF @ 4V, 1MHz, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: D-6, Axial, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 10 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Part Status: Active.