Technische Details 10ETS08S IR
Description: DIODE GEN PURP 800V 10A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-263AB (D2PAK), Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A, Current - Reverse Leakage @ Vr: 50 µA @ 800 V.
Weitere Produktangebote 10ETS08S
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| 10ETS08S | Hersteller : IR |
 07+ TO-263 |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
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10ETS08S | Hersteller : Vishay |
Rectifier Diode Switching 800V 10A 3-Pin(2+Tab) D2PAK Tube |
Produkt ist nicht verfügbar |
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10ETS08S | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 800V 10A TO263AB Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 50 µA @ 800 V |
Produkt ist nicht verfügbar |