Produkte > EVVO > 10N65F
10N65F

10N65F EVVO

10N65F_P.pdf Hersteller: EVVO
Description: MOSFET N-CH 650V 10A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 5A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1037 pF @ 25 V
auf Bestellung 103 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.18 EUR
50+1.03 EUR
100+0.92 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details 10N65F EVVO

Description: MOSFET N-CH 650V 10A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 5A, 10V, Power Dissipation (Max): 50W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: ITO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1037 pF @ 25 V.

Weitere Produktangebote 10N65F nach Preis ab 0.85 EUR bis 2.53 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
10N65F 10N65F Hersteller : UMW 310f4d1d8a3dc48707de7f43a9cfa003.pdf Description: MOSFET N-CH 650V 10A TO220F
Packaging: Tube
auf Bestellung 967 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.53 EUR
11+1.61 EUR
100+1.08 EUR
500+0.85 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH