15KP100CA

15KP100CA MDE Semiconductor Inc


15KP_Series.pdf Hersteller: MDE Semiconductor Inc
Description: TVS DIODE BP 100VRWM 161.3VC
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 93.6A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 111.7V
Voltage - Clamping (Max) @ Ipp: 161.3V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
auf Bestellung 1000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+16.17 EUR
Mindestbestellmenge: 2
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Technische Details 15KP100CA MDE Semiconductor Inc

Description: TVS DIODE BP 100VRWM 161.3VC, Packaging: Bulk, Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 93.6A, Voltage - Reverse Standoff (Typ): 100V, Supplier Device Package: P600, Bidirectional Channels: 1, Voltage - Breakdown (Min): 111.7V, Voltage - Clamping (Max) @ Ipp: 161.3V, Power - Peak Pulse: 15000W (15kW), Power Line Protection: No.

Weitere Produktangebote 15KP100CA

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15KP100CA 15KP100CA Hersteller : CDIL 15KP_ser.PDF Category: Bidirectional THT transil diodes
Description: Diode: TVS; 111.7V; 93.6A; bidirectional; R6; 15kW; bulk
Type of diode: TVS
Max. off-state voltage: 100V
Breakdown voltage: 111.7V
Max. forward impulse current: 93.6A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Peak pulse power dissipation: 15kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
15KP100CA 15KP100CA Hersteller : CDIL 15KP_ser.PDF Category: Bidirectional THT transil diodes
Description: Diode: TVS; 111.7V; 93.6A; bidirectional; R6; 15kW; bulk
Type of diode: TVS
Max. off-state voltage: 100V
Breakdown voltage: 111.7V
Max. forward impulse current: 93.6A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Peak pulse power dissipation: 15kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar