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18N10

18N10 Goford Semiconductor

18N10.pdf
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<53M@10V,RD(MAX)<63
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2161 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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Technische Details 18N10 Goford Semiconductor

Description: MOSFET N-CH 100V 25A TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1318 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 62.5W (Tc), Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

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18N10 18N10 Goford Semiconductor 18N10.pdf Description: N100V,RD(MAX)<53M@10V,RD(MAX)<63
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2161 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
18N10 18N10 Goford Semiconductor 18N10.pdf Description: MOSFET N-CH 100V 25A TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1318 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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18N10 18N10.pdf
18N10
Hersteller: Goford Semiconductor
Description: N100V,RD(MAX)<53M@10V,RD(MAX)<63
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2161 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
18N10 18N10.pdf
18N10
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 100V 25A TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1318 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: TO-252
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
18N-10
Hersteller: Spectrum Control
RF Connectors / Coaxial Connectors ATTENUATOR 18N 18GHZ 10DB M/F
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH