18N10 Goford Semiconductor

Description: MOSFET N-CH 100V 25A TO-252, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1318 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Supplier Device Package: TO-252, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 62.5W (Tc), Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).