18N20F Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET N-CH 200V 18A TO-220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.69 EUR |
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Technische Details 18N20F Goford Semiconductor
Description: MOSFET N-CH 200V 18A TO-220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-220F, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V.
Weitere Produktangebote 18N20F nach Preis ab 0.68 EUR bis 0.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
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| 18N20F | Hersteller : GOFORD Semiconductor |
N-CH,200V,18A,RD(max) Less Than 0.19Ohm at 10V,VTH 1.0V to 3.0V, TO-220F |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| 18N20F | Hersteller : GOFORD SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Planar; unipolar; 200V; 18A; 35W; TO220F Case: TO220F Mounting: THT Drain current: 18A Gate-source voltage: ±20V Power dissipation: 35W Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Technology: Planar Polarisation: unipolar Gate charge: 18nC |
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