18N20J Goford Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.67 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
1500 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details 18N20J Goford Semiconductor
N-CH,200V,18A,RD(max) Less Than 0.16Ohm at 10V,VTH 1.0V to 3.0V, TO-251.
Weitere Produktangebote 18N20J nach Preis ab 0.63 EUR bis 3.22 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
18N20J | Goford Semiconductor |
 Description: N200V, 18A,RD<0.16@10V,VTH1V~3V,Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V Power Dissipation (Max): 65.8W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-251 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 25 V |
auf Bestellung 114 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
| 18N20J | GOFORD Semiconductor |
N-CH,200V,18A,RD(max) Less Than 0.16Ohm at 10V,VTH 1.0V to 3.0V, TO-251 |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
|
| 18N20J |
|
Hersteller: Goford Semiconductor
Description: N200V, 18A,RD<0.16@10V,VTH1V~3V,
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 25 V
Description: N200V, 18A,RD<0.16@10V,VTH1V~3V,
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Power Dissipation (Max): 65.8W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 25 V
auf Bestellung 114 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.22 EUR |
| 11+ | 2.05 EUR |
| 75+ | 1.43 EUR |
| 18N20J |
|
Hersteller: GOFORD Semiconductor
N-CH,200V,18A,RD(max) Less Than 0.16Ohm at 10V,VTH 1.0V to 3.0V, TO-251
N-CH,200V,18A,RD(max) Less Than 0.16Ohm at 10V,VTH 1.0V to 3.0V, TO-251
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 285+ | 0.63 EUR |