1N5817HA0G

1N5817HA0G

1N5817HA0G

Hersteller: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 1A DO204AL
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Diode Type: Schottky
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Box (TB)
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: DO-204AL (DO-41)
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A

1N5817%20SERIES_H2104.pdf
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Technische Details 1N5817HA0G

Description: DIODE SCHOTTKY 20V 1A DO204AL, Speed: Fast Recovery =< 500ns, > 200mA (Io), Diode Type: Schottky, Mounting Type: Through Hole, Package / Case: DO-204AL, DO-41, Axial, Packaging: Tape & Box (TB), Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A, Current - Reverse Leakage @ Vr: 1 mA @ 20 V, Voltage - DC Reverse (Vr) (Max): 20 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 125°C, Supplier Device Package: DO-204AL (DO-41), Capacitance @ Vr, F: 55pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A.

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