1EBN1001AEXUMA1 Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IC GATE DRV HI/LOW SIDE DSO14-43
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 13V ~ 18V
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-14-43
Rise / Fall Time (Typ): 50ns, 90ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 4565 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 5.79 EUR |
| 10+ | 5.2 EUR |
| 25+ | 4.92 EUR |
| 100+ | 4.26 EUR |
| 250+ | 4.04 EUR |
| 500+ | 3.63 EUR |
| 1000+ | 3.06 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 1EBN1001AEXUMA1 Infineon Technologies
Description: IC GATE DRV HI/LOW SIDE DSO14-43, Packaging: Tape & Reel (TR), Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 13V ~ 18V, High Side Voltage - Max (Bootstrap): 1200 V, Supplier Device Package: PG-DSO-14-43, Rise / Fall Time (Typ): 50ns, 90ns, Channel Type: Single, Driven Configuration: High-Side or Low-Side, Number of Drivers: 1, Gate Type: IGBT, N-Channel, P-Channel MOSFET, Logic Voltage - VIL, VIH: 1.5V, 3.5V, Part Status: Active, DigiKey Programmable: Not Verified, Grade: Automotive, Qualification: AEC-Q100.
Weitere Produktangebote 1EBN1001AEXUMA1 nach Preis ab 2.92 EUR bis 5.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
1EBN1001AEXUMA1 | Hersteller : Infineon Technologies |
Gate Drivers HVGD_TRACT_INV |
auf Bestellung 851 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
1EBN1001AEXUMA1 | Hersteller : Infineon Technologies |
IGBT / MOSFET Gate Driver Booster |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
1EBN1001AEXUMA1 | Hersteller : Infineon Technologies |
Description: IC GATE DRV HI/LOW SIDE DSO14-43 Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 13V ~ 18V High Side Voltage - Max (Bootstrap): 1200 V Supplier Device Package: PG-DSO-14-43 Rise / Fall Time (Typ): 50ns, 90ns Channel Type: Single Driven Configuration: High-Side or Low-Side Number of Drivers: 1 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 1.5V, 3.5V Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |