
1N249C Solid State Inc.

Description: DIODE GEN PURP 100V 40A DO5
Packaging: Box
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
10+ | 4.17 EUR |
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Technische Details 1N249C Solid State Inc.
Description: DIODE GEN PURP 100V 20A DO5, Packaging: Bulk, Package / Case: DO-203AB, DO-5, Stud, Mounting Type: Stud Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 5 µs, Technology: Standard, Current - Average Rectified (Io): 20A, Supplier Device Package: DO-5 (DO-203AB), Operating Temperature - Junction: -65°C ~ 200°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V.
Weitere Produktangebote 1N249C
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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1N249C | Hersteller : Microchip Technology |
![]() Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
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1N249C | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |